CN101062837B - 基板蚀刻设备和方法 - Google Patents

基板蚀刻设备和方法 Download PDF

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Publication number
CN101062837B
CN101062837B CN2007100077287A CN200710007728A CN101062837B CN 101062837 B CN101062837 B CN 101062837B CN 2007100077287 A CN2007100077287 A CN 2007100077287A CN 200710007728 A CN200710007728 A CN 200710007728A CN 101062837 B CN101062837 B CN 101062837B
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CN
China
Prior art keywords
bubble
etching
glass substrate
injection
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007100077287A
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English (en)
Chinese (zh)
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CN101062837A (zh
Inventor
金景满
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
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Filing date
Publication date
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Publication of CN101062837A publication Critical patent/CN101062837A/zh
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Publication of CN101062837B publication Critical patent/CN101062837B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0426—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Organic Chemistry (AREA)
  • Surface Treatment Of Glass (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
CN2007100077287A 2006-04-27 2007-01-29 基板蚀刻设备和方法 Expired - Fee Related CN101062837B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060038222A KR20070105699A (ko) 2006-04-27 2006-04-27 기판 식각 장치 및 이를 이용한 기판 식각 방법
KR38222/06 2006-04-27

Publications (2)

Publication Number Publication Date
CN101062837A CN101062837A (zh) 2007-10-31
CN101062837B true CN101062837B (zh) 2012-09-05

Family

ID=38769293

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007100077287A Expired - Fee Related CN101062837B (zh) 2006-04-27 2007-01-29 基板蚀刻设备和方法

Country Status (4)

Country Link
JP (1) JP4980783B2 (https=)
KR (1) KR20070105699A (https=)
CN (1) CN101062837B (https=)
TW (1) TWI397120B (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101375848B1 (ko) 2006-12-08 2014-03-18 (주)스마트에이스 기판식각장치 및 이를 이용한 액정표시소자 제조라인
KR100860294B1 (ko) * 2008-01-09 2008-09-25 주식회사 이코니 유리기판 에칭 장치와 상기 에칭 장치에 의하여 제조된유리박판
KR100911598B1 (ko) * 2008-01-09 2009-08-07 주식회사 실트론 버블 발생유닛 및 이를 포함하는 웨이퍼 에칭 장치
KR101304103B1 (ko) * 2011-10-17 2013-09-05 호서대학교 산학협력단 초박형 글래스판 제조 방법
KR101151296B1 (ko) * 2012-02-03 2012-06-08 주식회사 엠엠테크 기판 에칭 장치
CN103508675B (zh) * 2012-06-28 2016-09-14 Sti有限公司 用于玻璃蚀刻装置的气泡生成器
KR101404236B1 (ko) * 2013-03-13 2014-06-05 박경용 글라스 기판 식각장치 및 방법
CN104445975A (zh) * 2014-12-01 2015-03-25 欧浦登（顺昌）光学有限公司 一种玻璃局部防眩加工工艺及其产品
CN104891817B (zh) * 2015-06-09 2017-05-03 武汉华星光电技术有限公司 浸泡式玻璃基板蚀刻机
CN106356322A (zh) * 2016-10-20 2017-01-25 北方电子研究院安徽有限公司 一种晶圆腐蚀装置以及腐蚀方法
CN107357094B (zh) * 2017-08-16 2020-06-05 武汉华星光电技术有限公司 液晶滴下装置及液晶喷洒装置
JP6971124B2 (ja) * 2017-10-24 2021-11-24 東京エレクトロン株式会社 基板処理装置
CN108417509A (zh) * 2018-01-29 2018-08-17 九江维信诺科技有限公司 片材刻蚀装置
JP7176904B2 (ja) * 2018-09-21 2022-11-22 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101999548B1 (ko) * 2019-02-28 2019-07-12 제일유리 주식회사 유리표면 처리장치
KR101976069B1 (ko) * 2019-03-06 2019-05-07 주식회사 삼성플랜텍 공기공급부를 가지는 판유리 적재용 지그
KR101994320B1 (ko) * 2019-03-11 2019-09-30 주식회사 삼성플랜텍 생산수율이 대폭 향상되는 화학강화 유리 제조장치
KR101995324B1 (ko) * 2019-03-12 2019-10-02 정창수 공기공급부를 가지는 원형 배치타입의 화학강화 유리 제조장치
JP7467233B2 (ja) * 2020-05-26 2024-04-15 東京エレクトロン株式会社 基板処理装置
JP7461269B2 (ja) * 2020-10-09 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP7716349B2 (ja) * 2022-01-28 2025-07-31 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN114899131A (zh) * 2022-06-09 2022-08-12 扬州赛诺高德电子科技有限公司 一种微小气泡辅助蚀刻加工装置以及方法
CN117945663B (zh) * 2024-02-04 2025-07-18 赛德半导体有限公司 一种湿法蚀刻设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911097B1 (en) * 2000-07-31 2005-06-28 Taiwan Semiconductor Manufacturing Company Photoresist stripper using nitrogen bubbler
CN1674974A (zh) * 2002-08-21 2005-09-28 美国废水过滤集团公司 充气方法

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* Cited by examiner, † Cited by third party
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JPS62119543A (ja) * 1985-11-20 1987-05-30 Mitsubishi Electric Corp 半導体製造装置
JP2522805B2 (ja) * 1987-11-20 1996-08-07 三井石油化学工業株式会社 洗浄方法
US6630052B1 (en) * 1996-06-26 2003-10-07 Lg. Philips Lcd Co., Ltd. Apparatus for etching glass substrate
JP3183214B2 (ja) * 1997-05-26 2001-07-09 日本電気株式会社 洗浄方法および洗浄装置
TW543113B (en) * 2002-09-20 2003-07-21 Sti Co Ltd Auto-etching unit and method for TFT-LCD glass substrate
KR20040110391A (ko) * 2003-06-19 2004-12-31 삼성전자주식회사 기판 처리 장치
KR20050064377A (ko) * 2003-12-23 2005-06-29 엘지.필립스 엘시디 주식회사 버블판을 포함하는 식각장치 및 이를 이용한 식각 방법
JP2005211718A (ja) * 2004-01-27 2005-08-11 Dainippon Screen Mfg Co Ltd 基板処理装置
JP4071220B2 (ja) * 2004-03-17 2008-04-02 西山ステンレスケミカル株式会社 ガラス基板の製造方法
JP2006216742A (ja) * 2005-02-03 2006-08-17 Renesas Technology Corp 洗浄装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911097B1 (en) * 2000-07-31 2005-06-28 Taiwan Semiconductor Manufacturing Company Photoresist stripper using nitrogen bubbler
CN1674974A (zh) * 2002-08-21 2005-09-28 美国废水过滤集团公司 充气方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP平3-38037A 1991.02.19
JP昭64-55828A 1989.03.02

Also Published As

Publication number Publication date
JP4980783B2 (ja) 2012-07-18
JP2007300118A (ja) 2007-11-15
CN101062837A (zh) 2007-10-31
TWI397120B (zh) 2013-05-21
TW200741850A (en) 2007-11-01
KR20070105699A (ko) 2007-10-31

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Owner name: SAMSUNG MONITOR CO., LTD.

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Effective date: 20121031

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Effective date of registration: 20121031

Address after: Gyeonggi Do, South Korea

Patentee after: Samsung Display Co.,Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120905

Termination date: 20210129

CF01 Termination of patent right due to non-payment of annual fee