CN106356322A - 一种晶圆腐蚀装置以及腐蚀方法 - Google Patents
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- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
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- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
本发明提供一种晶圆腐蚀装置,其特征在于它包括:支架(1),在支架(1)上设有电机(2),在电机(2)的输出端上设有连接杆(3),在连接杆(3)的端部设有粘片头(4),设置一个与粘片头(4)对应配合的腐蚀槽主体(5)。本发明具有结构简单、工艺操作易于实现、成本低、可靠性高等优点。
Description
技术领域:
本发明涉及一种腐蚀装置,具体的说就是一种适用于半导体集成电路、微机电系统(MEMS)制造技术领域中的湿法腐蚀工艺的晶圆腐蚀装置。
背景技术:
湿法腐蚀作为半导体制造技术领域的常用工艺之一,已被广泛应用。通常半导体集成电路制造技术采用的湿法腐蚀工艺,将晶圆浸没在腐蚀液中进行腐蚀,晶圆背面无器件结构,不需要进行保护。随着半导体制造技术的的发展,一些特殊器件要求对晶圆双面进行工艺加工,如MEMS器件、COMS图像传感器、背照式CCD图像传感器、IMPATT管等。晶圆两面结构及介质材料不同,对一面进行腐蚀时,另一面必须进行保护。
目前单面腐蚀采用的保护方式大致可分为两类:一类为采用介质层隔离;另一类为采用夹具密封。
介质层隔离通常采用淀积或涂覆与腐蚀液不反应的膜层从而起到保护的作用,常用的介质层有氮化硅、光刻胶、BCB胶等。该方法都存在一定的局限性,如:氮化硅介质需要引入氮化硅薄膜淀积工艺,工艺成本较高,且氮化硅较难去除,工艺复杂度增加;光刻胶附着性较差,无法长时间在腐蚀液中浸泡;BCB胶固化后,很难去除。
夹具密封可满足一般的单面保护腐蚀工艺,但同样存在一定的局限性。夹具密封通常需要采用密封环将晶圆保护面及边缘与腐蚀液隔离,从而起到腐蚀单面,保护背面的作用。然而,由于晶圆边缘与密封环接触区域无法被腐蚀液腐蚀,在进行整面腐蚀减薄工艺中,如CMOS图像传感器、背照式CCD图像传感器、IMPATT管,会在边缘留下环形区,导致后续工艺无法加工。
发明内容:
本发明就是为了克服现有技术中的不足,提供一种结构简单、工艺操作易于实现、成本低、可靠性高,在腐蚀过程中能对晶圆背面提供有效保护的晶圆腐蚀装置。
本发明提供以下技术方案:
一种晶圆腐蚀装置,其特征在于它包括:支架,在支架上设有电机,在电机的输出端上设有连接杆,在连接杆的端部设有与晶圆对应配合的粘片头,所述的粘片头与晶圆通过粘合剂配合连接,设置一个与粘片头对应配合的腐蚀槽主体。
在上述技术方案的基础上,还可以有以下进一步的技术方案:
所述的粘合剂是质量比1:1的松香和蜂蜡加热熔化的混合物。
在所述的支架上设有一个覆盖电机的罩壳。
所述的腐蚀槽主体包括槽体,在槽体底部的一侧设有气腔,在气腔一侧设有转接头, 转接头上连通有氮气管,在槽体底部设有一组与气腔相通的气孔。
所述的电机的输出端与连接杆通过联轴器配合连接。
一种晶圆腐蚀装置的腐蚀方法,其特征在于它包括以下步骤:a、将粘合剂涂于粘片头上,在粘合剂凝固前快速将晶圆背面贴在粘片头上,使晶圆边缘被粘合剂全部覆盖,待粘合剂冷却凝固后,用毛刷沾取丙酮将晶圆边缘腐蚀面的粘合剂清除掉;
b、将配好的腐蚀液倒入腐蚀槽主体内,在腐蚀槽主体内通入气体,使腐蚀液中形成均匀气泡,将带有腐蚀晶圆的粘片头放入腐蚀液中,而后启动电机,带动粘片头在溶液中旋转,腐蚀完成后,在高纯水中冲洗粘片头,而后将晶圆表面吹干,及腐蚀完成;
c、当晶圆与粘片头分离时,将粘片头浸于丙酮中,再加热丙酮,以便凝固的粘合剂融化,从而使晶圆与粘片头分离,将分离的晶圆,浸于甲苯中,再加热甲苯,以便去除残余的粘合剂,而后将晶圆放入晶圆盒中。
发明优点在于:
本发明通过粘合剂将晶圆背面与粘片头贴合,并形成侧边密封保护,当晶圆浸没在腐蚀液中,只在正面发生腐蚀反应,可对背面形成有效保护;在腐蚀过程中,只有背面与侧边覆盖有粘合剂,避免了常规夹持装置与正面接触区域无法腐蚀的缺点,可用于晶圆背面腐蚀减薄;粘合剂抗腐蚀性强、稳定性高,可在腐蚀液中长时间浸泡腐蚀,且容易去除、清洗;粘合剂制备、粘片及去除操作简单,工艺成本低;腐蚀过程中提供顺时针、逆时针交替偏心旋转,腐蚀槽底部通氮气形成均匀气泡,腐蚀均匀性较好。
附图说明:
图1是本发明的结构示意图;
图2是本发明的侧视图;
图3是本发明中腐蚀槽主体的结构示意图。
具体实施方式:
如图1-3所示,一种晶圆腐蚀装置,它包括:设置一个支架1,在支架1上设有电机2,电机2的输出端向下穿过支架1后通过联轴器2a连接有连接杆3,在连接杆3的下端部连接有一个与晶圆对应配合的粘片头4,所述的粘片头4采用PTFE材质制成。
所述的粘片头4与晶圆通过粘合剂配合连接,所述的粘合剂为质量比1:1的松香和蜂蜡加热熔化的混合物。
在支架1上设有一个覆盖电机2的罩壳6,在罩壳6上设有一组电机控制开关6a,所述的电机控制开关6a通过导线与电机2形成电信号配合。所述电机2的电源插头2b位于罩壳6的外侧,且通过电源线2c与罩壳6内的电机2形成连接配合。
设置一个与粘片头4对应配合的腐蚀槽主体5,所述的腐蚀槽主体5包括一个上开口的矩形槽体5a,在槽体5a底部的下侧设有气腔5b, 在槽体5a底部均布一组与气腔5b相通的气孔5e。
在气腔5b一侧设有转接头5c, 在转接头5c上连通有氮气管5d,在氮气管5d上还设有图中未显示的气阀。
使用本发明的一种晶圆腐蚀装置进行晶圆腐蚀作业时包括以下具体步骤:
第一步进行粘片工序,即将晶圆与粘片头粘接在一起,它包括:
1)粘片采用的粘合剂为松香和蜂蜡的混合物,二者按质量比1:1进行混合后,在容器中加热至熔化;
2)将熔化后的粘合剂涂于粘片头的底面上,在粘合剂凝固前快速的将晶圆背面贴在粘片头的底面上,使晶圆边缘被粘合剂全部覆盖;
3)待粘合剂冷却凝固后,用毛刷沾取丙酮将晶圆边缘腐蚀面的粘合剂清除掉,粘片工序完成。
第二步腐蚀工序,它包括:
1)根据待腐蚀材料种类,配制相应的腐蚀溶液,将配好的腐蚀液倒入矩形槽体中,且腐蚀液体积约为矩形槽体容积的三分之二;
2)打开氮气管上的气阀,使氮气进入腐蚀槽底部的气腔中,而后氮气通过通气孔进入矩形槽体,使腐蚀液中形成均匀气泡;
3)将带有腐蚀晶圆的粘片头,通过连接杆与电机部分连接固定,再将粘片头浸没于腐蚀溶液中,而后打开电机的电源开关,电机带动粘片头在溶液中旋转,同时开始计时;
4)腐蚀完成后,关闭电源,取下连接杆,在高纯水中冲洗粘片头及连接杆;
5)将粘片头与连接杆分离,用氮气喷枪将晶圆表面吹干;
6)在显微镜或测试设备上评价腐蚀效果,如无达到预期要求,重复步骤3)-5)。
第三步取片工序,它包括:
1)在空容器中倒入丙酮,将粘片头浸于丙酮中,在电炉上进行加热至丙酮沸腾,2-3分钟晶圆即与粘片头分离,取出晶圆;
2)在另一空容器内倒入甲苯,将取出的晶圆再次浸于甲苯中,在电炉上进行加热至甲苯沸腾,2-3分钟后取出晶圆,将其放入晶圆盒中,整个晶圆腐蚀作业结束。
Claims (6)
1.一种晶圆腐蚀装置,其特征在于它包括:支架(1),在支架(1)上设有电机(2),在电机(2)的输出端上设有连接杆(3),在连接杆(3)的端部设有与晶圆对应配合的粘片头(4),所述的粘片头(4)与晶圆通过粘合剂配合连接,设置一个与粘片头(4)对应配合的腐蚀槽主体(5),在腐蚀槽主体(5)内通入气体。
2.根据权利要求1中所述的一种晶圆腐蚀装置,其特征在于:所述的粘合剂是质量比1:1的松香和蜂蜡加热熔化的混合物。
3.根据权利要求1中所述的一种晶圆腐蚀装置,其特征在于:在所述的支架(1)上设有一个覆盖电机的罩壳(6)。
4.根据权利要求1中所述的一种晶圆腐蚀装置,其特征在于:所述的腐蚀槽主体(5)包括槽体(5a),在槽体(5a)底部的一侧设有气腔(5b),在气腔(5b)一侧设有转接头(5c), 转接头(5c)上连通有氮气管(5d),在槽体(5a)底部设有一组与气腔(5b)相通的气孔(5e)。
5.根据权利要求1中所述的一种晶圆腐蚀装置,其特征在于:所述的电机(2)的输出端与连接杆(3)通过联轴器(2a)配合连接。
6.根据权利要求1-5中任意一项所述的一种晶圆腐蚀装置的腐蚀方法,其特征在于它包括以下步骤:a、将粘合剂涂于粘片头上,在粘合剂凝固前快速将晶圆背面贴在粘片头上,使晶圆边缘被粘合剂全部覆盖,待粘合剂冷却凝固后,用毛刷沾取丙酮将晶圆边缘腐蚀面的粘合剂清除掉;
b、将配好的腐蚀液倒入腐蚀槽主体内,在腐蚀槽主体内通入气体,使腐蚀液中形成均匀气泡,将带有腐蚀晶圆的粘片头放入腐蚀液中,而后启动电机,带动粘片头在溶液中旋转,腐蚀完成后,在高纯水中冲洗粘片头,而后将晶圆表面吹干,及腐蚀完成;
c、当晶圆与粘片头分离时,将粘片头浸于丙酮中,再加热丙酮,以便凝固的粘合剂融化,从而使晶圆与粘片头分离,将分离的晶圆,浸于甲苯中,再加热甲苯,以便去除残余的粘合剂,而后将晶圆放入晶圆盒中。
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