CN101051657A - 太阳能电池及其制造方法 - Google Patents

太阳能电池及其制造方法 Download PDF

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CN101051657A
CN101051657A CNA2007100920460A CN200710092046A CN101051657A CN 101051657 A CN101051657 A CN 101051657A CN A2007100920460 A CNA2007100920460 A CN A2007100920460A CN 200710092046 A CN200710092046 A CN 200710092046A CN 101051657 A CN101051657 A CN 101051657A
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朴相昱
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Samsung SDI Co Ltd
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Abstract

一种改进效率的太阳能电池及其制造方法，包括：在半导体基板的表面上形成多孔层；在多孔层上喷射含掺杂物的化合物；以及通过扩散掺杂物在半导体基板的表面上形成发射体层。

Description

太阳能电池及其制造方法
技术领域
本发明涉及太阳能电池及其制造方法，特别是，本发明涉及改善效率的太阳能电池及其制造方法。
背景技术
太阳能电池利用太阳能产生电能。太阳能电池对生态环境友好，并且具有无限的能源和长的生命周期。太阳能电池包括硅太阳能电池和颜料感光(dye-sensitized)太阳能电池。
硅太阳能电池包括具有不同导电类型以形成PN结的半导体基板和发射体层，电连接到发射体层的第一电极，以及电连接到半导体基板的第二电极。
通常，发射体层通过高温扩散方法、印刷方法或喷涂方法形成。由于高温扩散方法使用扩散炉，因此高温扩散方法的生产率低，其不适合于大尺寸装置。由于印刷方法使用昂贵的材料，因此印刷方法的材料损耗大，并且生产率低。在喷涂方法中，包含掺杂物的化合物喷射到半导体基板的表面上，并且掺杂物通过高温热处理扩散，由此形成发射体层。喷雾方法比其他方法的生产率高。
然而，当喷涂方法中采用的包含掺杂物的化合物为亲水性时，半导体基板是疏水的。因此，包含掺杂物的化合物确实不能形成在半导体基板上。另外，由于包含掺杂物的化合物要在高温热处理中进行蒸发，因此扩散在半导体基板中的掺杂物量不足。因此，因为难于形成具有合适浓度的发射体层，所以PN结特性变坏。
发明内容
为了解决上述问题，本发明提供一种太阳能电池及其制造方法，该太阳能电池在半导体基板中可以扩散足够量的掺杂物，以改善PN结的特性。
根据本发明的一个方面，提供一种制造太阳能电池的方法，该方法包括：在半导体基板的表面上形成多孔层；在多孔层上喷射包含掺杂物的化合物；并且通过扩散掺杂物在半导体的表面上形成发射体层。
可以通过热处理，将掺杂物从多孔层扩散到半导体基板。
通过在半导体基板的表面上进行化学处理可以形成多孔层。多孔层可以由与半导体基板相同的材料形成。化学处理可以是氢氟酸处理。多孔层可以包括硅。
多孔层可以通过沉积方法或印刷方法形成。多孔层可以包括选自于由氧化钛、氧化硅和氮化硅所组成的组中的至少一种材料。
该方法还可以包括在形成发射体层后去除多孔层。
根据本发明的另一个方面，所提供的太阳能电池包括：半导体基板；设置在半导体基板的表面上的发射体层；以及设置在发射体层上以防止太阳光被反射的多孔层。
多孔层和发射体层可以由相同的材料形成。多孔层可以包括硅。当多孔层由硅形成时，可以采用具有不同能量带隙和光区(light region)的多孔层。然而，具有不同能量带隙和光区的多孔层不能用在现有的硅太阳能电池中。
多孔层和发射体层可以由不同的材料形成。多孔层可以包括选自于由氧化钛、氧化硅和氮化硅所组成的组中的至少一种材料。
太阳能电池还可以包括电连接到发射体层的第一电极和电连接到半导体基板的第二电极。
附图说明
结合附图，通过下面的详细描述，随着对本发明的更好理解，本发明的更完整的评价及其很多伴随的优点将显而易见，其中相同的参考符号指代相同或相似的部件，其中：
图1A至1F是根据本发明一个实施例的制造太阳能电池的方法的截面图；和
图2A至2F是根据本发明另一实施例的制造太阳能电池的方法的截面图。
具体实施方式
在下文，参照附图详细描述根据本发明实施例的太阳能电池及其制造方法。
图1A至1F是制造根据本发明实施例的太阳能电池的方法的截面图。
首先，如图1A所示，p型半导体基板10由硅形成。然而，本发明不限于此。就是说，可以采用n型半导体基板或由硅之外的各种半导体材料形成的半导体基板。
为了改善太阳能电池的特性，可以执行一个预处理步骤。该预处理步骤通过采用碱性水溶液或混合酸溶液蚀刻半导体基板10并且去除杂质来完成。半导体基板10的损坏部分通过蚀刻去除，细微的不平(fine irregularities)形成在半导体基板10的表面中。因此，能够减少太阳光的损耗。
随后，如图1B所示，多孔层12形成在半导体基板10的表面上。在本实施例中，多孔层12通过化学处理形成在半导体基板10的表面上。这样的化学处理包括氢氟酸处理。然而，本发明不限于此。多孔层可以通过其他各种方法形成。
多孔层12由与半导体基板10基本上相同的材料形成。然而，因为多孔层12由多孔的硅形成而不同于半导体基板10，所以多孔层12具有不同于半导体基板10的能量带隙。
随后，如图1C和1D所示，发射体层16形成在半导体基板10的表面上，特别是在多孔层12和半导体基板10之间的界面上。
如图1C所示，含磷化合物14通过喷涂方法喷射在多孔层12上。
喷射在多孔层12上的含磷化合物14储存在多孔层12的表面和毛孔中。因此，即使半导体基板10是疏水的，足够量含磷化合物14也可以储存在多孔层12中。
尽管在本发明中磷用作掺杂物来形成n型发射体层16，但是本发明不限于此，磷之外的各种其他材料也可以用作掺杂物。发射体层16必须与半导体层10的导电性相反。因此，当采用n型半导体基板时，必须形成p型发射体层。
接下来，如图1D所示，通过高温热处理，磷从多孔层扩散到半导体基板10，以形成n型发射体层16。高温热处理可以采用红外线灯或各种其他方法完成。因为磷包含在多孔层12中，所以多孔层12由与发射层16基本上相同的材料形成。就是说，多孔层12由掺杂有磷的硅形成。
在本实施例中，因为在多孔层12中储存有足够量的含磷化合物，所以能够在半导体基板10中扩散大量的掺杂物。因为形成在半导体基板10的表面上的多孔层12防止含磷化合物14在高温热处理期间被蒸发，所以能够增加在半导体基板10中扩散的掺杂物的量。因此，能够使所形成的发射层16具有期望的浓度，并且改善PN结特性。
由于在本发明中采用喷涂方法，因此能够仅在半导体基板10的前表面上形成发射体层16。就是说，与高温扩散方法相比能够简化工艺，高温扩散方法要求断开形成在半导体基板的前表面和后表面上的发射层的步骤，这是因为发射体层形成在半导体层的前表面、侧表面和后表面上。在喷涂方法中，用于去除形成在后表面上的发射体层的补偿工艺是不必要的，并且本实施例可应用于具有各种后表面结构的太阳能电池。
随后，如图1E所示，铝浆丝网印刷在半导体基板10的后表面上，并且加热来形成电连接到半导体基板10的后电极18。然而，本发明不限于此。后电极18可以由各种材料形成，并且这样的修改在本发明的范围中。
通过热处理，铝在半导体基板10的后表面中扩散到预定的厚度，来形成p+后场层(rear field layer)20。该后场层20防止光激电子运动到半导体基板10的后表面。
随后，如图1F所示，电连接到发射体层16的前电极22形成在多孔层12上。前电极22可以通过以预定图形的导电浆涂敷多孔层12并且执行热处理形成。导电浆例如可以由银(Ag)形成。如上所述，因为掺杂物保留在多孔层12中，甚至掺杂物扩散到发射体层16中之后，所以多孔层12和发射体层16由基本上相同的材料形成。因此，尽管前电极22形成在多孔层12上，但是前电极22和发射体层16可以彼此电连接。
通过上述制造方法制造的太阳能电池包括半导体基板10、形成在半导体基板10的前表面上的发射体层16、多孔层12、前电极22和形成在半导体基板10的后表面上的后电极18。多孔层12由多孔硅形成。
因为半导体基板10和发射体层16的非多孔硅的能量带隙不同于多孔层12的多孔硅的能量带隙，所以能够利用传统上不能利用的短波区的太阳光。因此，能够显著地提高太阳光的利用率。
通过构造多孔层12能够降低前表面的反射率约1％，并且能够改善太阳能电池的光接收效率。因为在本发明中多孔层12具有防反射作用，所以可以不需要另外的防反射层。如果需要，也可以形成防反射层，并且这样的修改在本发明的范围中。
在下文，参照附图详细描述根据本发明另一实施例的太阳能电池及其制造方法。省略了与上述实施例相同或类似步骤的详细描述。
图2A至2F是制造根据本发明另一实施例的太阳能电池的方法的截面图。
首先，如图2A所示，p型半导体基板110由硅形成。
随后，如图2B所示，多孔层112通过沉积方法或印刷方法形成在半导体基板110的表面上。多孔层112可以是氧化钛、氧化硅或氮化硅。因为多孔层112由不同于半导体基板110的材料形成，所以多孔层112由不同于发射体层的材料形成，这将在后面描述。
随后，如图2C和2D所示，发射体层116形成在半导体基板110的表面上，特别是在多孔层112和半导体基板110之间的界面上。
就是说，如图2C所示，含磷化合物通过喷涂方法喷射在多孔层112上。然后，如图2D所示，通过高温热处理扩散磷，以形成n-发射体层116。然而，本发明不限于此，磷之外的各种材料可以用于掺杂物。
在本发明中，通过高温热处理增加多孔层112的密度，并且因此多孔层112可以起到防反射层的作用。
随后，如图2E所示，后电极118和后场层120形成在半导体基板110的后表面上。
随后，如图2F所示，形成电连接到发射体层116的前电极122。前电极122可以通过用包含导电浆的膏如含银膏以预定图案涂敷多孔层112并且执行热处理来形成，因为在热处理期间去除位于导电浆下面的多孔层112，所以前电极122和发射体层116进行彼此接触，并且因此前电极122和发射体层116彼此电连接。
在通过上述制造方法制造的太阳能电池中，多孔层112由不同于半导体基板110和发射体层116的材料形成。并且起防发射层的作用。就是说，因为多孔层112改善了PN结的特性，并且起防反射层的作用，所以不需要单独形成防反射层，并且因此可以简化方法。
尽管在上述的实施例中多孔层起防反射层的作用，但是在形成发射体层后可以去除多孔层，并且这样的修改在本发明的范围中。
就是说，虽然已经描述了本发明的示范性实施例和修改实例，但是本发明不限于实施例和实例，可以以各种形式对其进行修改而不脱离所附权利要求的范围。因此，自然地，这样的修改属于本发明的范围。
根据制造本发明的太阳能电池的方法，多孔层可以储存足够量的含掺杂物化合物，并且防止含掺杂物化合物在高温热处理时被蒸发掉，以在半导体基板中扩散足够量的掺杂物。因此，能够形成具有合适浓度的发射体层，并且能够改善PN结的特性，以制造改善的太阳能电池。
另外，因为喷涂方法被用于形成发射体层，所以能够简化方法，并且改善生产率。因此，能够制造具有各种后结构的太阳能电池。
根据本发明的太阳能电池，因为多孔层可以形成为利用短波区的光，所以能够显著提高太阳光的利用率，并且防止太阳光被反射。因此，能够改善太阳能电池的效率。

Claims (14)

1、一种制造太阳能电池的方法，包括：
在半导体基板的表面上形成多孔层；
在该多孔层上喷射含有掺杂物的化合物；并且
通过扩散该掺杂物在该半导体基板的该表面上形成发射体层。
2、如权利要求1所述的方法，其中该掺杂物通过热处理从该多孔层扩散到该半导体基板。
3、如权利要求1所述的方法，其中该多孔层通过执行化学处理形成在该半导体基板的该表面上，该多孔层由与该半导体基板相同的材料形成。
4、如权利要求3所述的方法，其中该化学处理是氢氟酸处理。
5、如权利要求3所述的方法，其中该多孔层包括硅。
6、如权利要求1所述的方法，其中该多孔层通过沉积方法或印刷方法形成。
7、如权利要求6所述的方法，其中该多孔层包括选自于由氧化钛、氧化硅和氮化硅所组成的组中的至少一种材料。
8、如权利要求1所述的方法，还包括在形成该发射体层后去除该多孔层。
9、一种太阳能电池，包括：
半导体基板；
发射体层，设置在该半导体基板的表面上；和
多孔层，设置在该发射体层上，以防止太阳光被反射。
10、如权利要求9所述的太阳能电池，其中该多孔层和该发射体层为相同的材料。
11、如权利要求10所述的太阳能电池，其中该多孔层包括硅。
12、如权利要求9所述的太阳能电池，其中该多孔层和该发射体层为不同的材料。
13、如权利要求12所述的太阳能电池，其中该多孔层包括选自于由氧化钛、氧化硅和氮化硅所组成的组中的至少一种材料。
14、如权利要求9所述的太阳能电池，还包括电连接到该发射体层的第一电极和电连接到该半导体基板的第二电极。
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