JP2007281448A - 太陽電池とその製造方法 - Google Patents
太陽電池とその製造方法 Download PDFInfo
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- JP2007281448A JP2007281448A JP2007067884A JP2007067884A JP2007281448A JP 2007281448 A JP2007281448 A JP 2007281448A JP 2007067884 A JP2007067884 A JP 2007067884A JP 2007067884 A JP2007067884 A JP 2007067884A JP 2007281448 A JP2007281448 A JP 2007281448A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000002019 doping agent Substances 0.000 claims abstract description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- 238000010306 acid treatment Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- 239000007921 spray Substances 0.000 description 8
- SZUVGFMDDVSKSI-WIFOCOSTSA-N (1s,2s,3s,5r)-1-(carboxymethyl)-3,5-bis[(4-phenoxyphenyl)methyl-propylcarbamoyl]cyclopentane-1,2-dicarboxylic acid Chemical compound O=C([C@@H]1[C@@H]([C@](CC(O)=O)([C@H](C(=O)N(CCC)CC=2C=CC(OC=3C=CC=CC=3)=CC=2)C1)C(O)=O)C(O)=O)N(CCC)CC(C=C1)=CC=C1OC1=CC=CC=C1 SZUVGFMDDVSKSI-WIFOCOSTSA-N 0.000 description 4
- 229940126543 compound 14 Drugs 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
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Abstract
【解決手段】本発明の一実施例による太陽電池の製造方法は、半導体基板の一面に多孔性膜を形成する段階と、前記多孔性膜にドーパントを含有する化合物を噴射する段階と、前記ドーパントを拡散させて前記半導体基板の一面にエミッタ層を形成する段階を含む。かかる製造方法を用いることで、導体基板に十分量のドーパントを拡散させることが可能となり、太陽電池のp-n接合特性を向上できる。
【選択図】図1C
Description
12,112 多孔性膜
16,116 エミッタ層
14 リン含有化合物
18,118 後面電極
20,120 後面電界層
22,122 前面電極
Claims (14)
- 半導体基板の一面に多孔性膜を形成する段階と、
前記多孔性膜にドーパントを含有する化合物を噴射する段階と、
前記ドーパントを拡散させて、前記半導体基板の一面にエミッタ層を形成する段階と、
を含むことを特徴とする、太陽電池の製造方法。 - 前記ドーパントは、熱処理によって、前記多孔性膜から前記半導体基板まで拡散することを特徴とする、請求項1に記載の太陽電池の製造方法。
- 前記多孔性膜は、前記半導体基板の一面で行われる化学的処理によって形成され、前記半導体基板と同一物質で構成されることを特徴とする、請求項1または2に記載の太陽電池の製造方法。
- 前記化学的処理は、フッ酸処理であることを特徴とする、請求項3に記載の太陽電池の製造方法。
- 前記多孔性膜は、シリコンを含むことを特徴とする、請求項3に記載の太陽電池の製造方法。
- 前記多孔性膜は、蒸着法または印刷法によって形成されることを特徴とする、請求項1〜5のいずれかに記載の太陽電池の製造方法。
- 前記多孔性膜は、シリコン、酸化チタン、酸化シリコン、及び窒化シリコンからなる群より選択される少なくとも何れか一つの物質を含むことを特徴とする、請求項6に記載の太陽電池の製造方法。
- 前記エミッタ層を形成する段階以降に、前記多孔性膜を除去する段階を更に含むことを特徴とする、請求項1〜7のいずれかに記載の太陽電池の製造方法。
- 半導体基板と、
前記半導体基板の一面に形成されたエミッタ層と、
前記エミッタ層上に形成され、太陽光の反射を防止する多孔性膜と、
を含むことを特徴とする、太陽電池。 - 前記多孔性膜と前記エミッタ層とは、同一物質で構成されることを特徴とする、請求項9に記載の太陽電池。
- 前記多孔性膜は、シリコンを含むことを特徴とする、請求項10に記載の太陽電池。
- 前記多孔性膜と前記エミッタ層とは、互いに異なる物質で構成されることを特徴とする、請求項9に記載の太陽電池。
- 前記多孔性膜は、酸化チタン、酸化シリコン、及び窒化シリコンからなる群より選択される少なくとも何れか一つの物質を含むことを特徴とする、請求項12に記載の太陽電池。
- 前記エミッタ層に電気的に連結する第1電極と、
前記半導体基板に電気的に連結する第2電極と、
を更に含むことを特徴とする、請求項9〜13のいずれかに記載の太陽電池。
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KR10-2006-0031126 | 2006-04-05 | ||
KR1020060031126A KR20070099840A (ko) | 2006-04-05 | 2006-04-05 | 태양 전지 및 이의 제조 방법 |
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JP2007281448A true JP2007281448A (ja) | 2007-10-25 |
JP4879050B2 JP4879050B2 (ja) | 2012-02-15 |
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US (1) | US8227881B2 (ja) |
EP (1) | EP1843398A3 (ja) |
JP (1) | JP4879050B2 (ja) |
KR (1) | KR20070099840A (ja) |
CN (1) | CN100470850C (ja) |
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JP2013542592A (ja) * | 2010-09-20 | 2013-11-21 | サンパワー コーポレイション | 太陽電池の製造方法 |
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SE540184C2 (en) * | 2016-07-29 | 2018-04-24 | Exeger Operations Ab | A light absorbing layer and a photovoltaic device including a light absorbing layer |
RU2662254C1 (ru) * | 2017-06-13 | 2018-07-25 | федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный университет имени С.А. Есенина" | Способ изготовления полупроводниковой структуры, содержащей p-n-переход под пленкой пористого кремния для реализации фотоэлектрического преобразователя |
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- 2007-03-29 US US11/730,131 patent/US8227881B2/en active Active
- 2007-04-04 CN CNB2007100920460A patent/CN100470850C/zh not_active Expired - Fee Related
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JP2014524140A (ja) * | 2011-06-17 | 2014-09-18 | コミッサリア ア レネルジー アトミーク エ オ ゼネルジ ザルタナテイヴ | 選択エミッタを有する光電池の製造方法 |
JP2016540369A (ja) * | 2013-10-01 | 2016-12-22 | フラウンホッファー−ゲゼルシャフト・ツァー・フォデラング・デル・アンゲワンテン・フォーシュング・エー.ファウ. | 多孔性のシリコン層を連続的に製造する装置および方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20070099840A (ko) | 2007-10-10 |
CN100470850C (zh) | 2009-03-18 |
US8227881B2 (en) | 2012-07-24 |
EP1843398A2 (en) | 2007-10-10 |
CN101051657A (zh) | 2007-10-10 |
JP4879050B2 (ja) | 2012-02-15 |
EP1843398A3 (en) | 2011-03-23 |
US20070238216A1 (en) | 2007-10-11 |
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