CN101038937B - 薄膜半导体器件及其制造方法 - Google Patents

薄膜半导体器件及其制造方法 Download PDF

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Publication number
CN101038937B
CN101038937B CN200710086328XA CN200710086328A CN101038937B CN 101038937 B CN101038937 B CN 101038937B CN 200710086328X A CN200710086328X A CN 200710086328XA CN 200710086328 A CN200710086328 A CN 200710086328A CN 101038937 B CN101038937 B CN 101038937B
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CN
China
Prior art keywords
thin film
region
crystal
active region
semiconductor device
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Expired - Fee Related
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CN200710086328XA
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English (en)
Chinese (zh)
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CN101038937A (zh
Inventor
町田晓夫
藤野敏夫
河野正洋
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Japan Display West Inc
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Sony Corp
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Publication date
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Publication of CN101038937A publication Critical patent/CN101038937A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0251—Manufacture or treatment of multiple TFTs characterised by increasing the uniformity of device parameters

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
CN200710086328XA 2006-03-13 2007-03-13 薄膜半导体器件及其制造方法 Expired - Fee Related CN101038937B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006067273 2006-03-13
JP067273/06 2006-03-13
JP2006347053A JP4169073B2 (ja) 2006-03-13 2006-12-25 薄膜半導体装置および薄膜半導体装置の製造方法
JP347053/06 2006-12-25

Publications (2)

Publication Number Publication Date
CN101038937A CN101038937A (zh) 2007-09-19
CN101038937B true CN101038937B (zh) 2010-06-02

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200710086328XA Expired - Fee Related CN101038937B (zh) 2006-03-13 2007-03-13 薄膜半导体器件及其制造方法

Country Status (5)

Country Link
US (2) US7521712B2 (https=)
JP (1) JP4169073B2 (https=)
KR (1) KR101360302B1 (https=)
CN (1) CN101038937B (https=)
TW (1) TW200802891A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5444342B2 (ja) * 2008-07-18 2014-03-19 パナソニック株式会社 半導体デバイスおよびチャネル形成方法
TWI500159B (zh) * 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
TWI770659B (zh) 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9123820B2 (en) * 2010-05-31 2015-09-01 Sharp Kabushiki Kaisha Thin film transistor including semiconductor oxide layer having reduced resistance regions
CN103854987B (zh) * 2012-12-04 2017-08-25 中芯国际集成电路制造(上海)有限公司 伪栅的形成方法、选择性沉积硅的方法和插塞的形成方法
KR20150112288A (ko) * 2014-03-27 2015-10-07 삼성전자주식회사 스트레처블 소자와 그 제조방법 및 스트레처블 소자를 포함하는 전자장치
US11955561B2 (en) * 2021-07-22 2024-04-09 Taiwan Semiconductor Manufacturing Company Limited Carrier modification devices for avoiding channel length reduction and methods for fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3642546B2 (ja) * 1997-08-12 2005-04-27 株式会社東芝 多結晶半導体薄膜の製造方法
WO2000002251A1 (en) * 1998-07-06 2000-01-13 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display
US6548843B2 (en) * 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
JP2003037061A (ja) * 2001-07-24 2003-02-07 Sharp Corp 半導体薄膜およびその形成方法並びに半導体装置
US7232714B2 (en) * 2001-11-30 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2005012030A (ja) * 2003-06-19 2005-01-13 Sharp Corp 結晶性半導体膜の製造方法、結晶性半導体膜、半導体装置の製造方法および半導体装置
JP4408668B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法および製造装置
JP2006077834A (ja) 2004-09-08 2006-03-23 Nsk Ltd ボールねじ機構
JP2007281420A (ja) * 2006-03-13 2007-10-25 Sony Corp 半導体薄膜の結晶化方法
JP2007281421A (ja) * 2006-03-13 2007-10-25 Sony Corp 半導体薄膜の結晶化方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2005-12030A 2005.01.13
JP特开平8-97141A 1996.04.12

Also Published As

Publication number Publication date
KR20070093356A (ko) 2007-09-18
KR101360302B1 (ko) 2014-02-10
TW200802891A (en) 2008-01-01
US7521712B2 (en) 2009-04-21
US7598160B2 (en) 2009-10-06
US20070212825A1 (en) 2007-09-13
JP4169073B2 (ja) 2008-10-22
TWI342622B (https=) 2011-05-21
US20080241981A1 (en) 2008-10-02
JP2007281423A (ja) 2007-10-25
CN101038937A (zh) 2007-09-19

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SE01 Entry into force of request for substantive examination
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Owner name: NIPPON DISPLAY CO., LTD.

Free format text: FORMER OWNER: SONY CORPORATION

Effective date: 20121123

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Effective date of registration: 20121123

Address after: Aichi

Patentee after: Japan display West Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: Sony Corporation

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100602

Termination date: 20190313