JP2007281423A - 薄膜半導体装置および薄膜半導体装置の製造方法 - Google Patents
薄膜半導体装置および薄膜半導体装置の製造方法 Download PDFInfo
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
【解決手段】レーザ光Lhの照射によって多結晶化した活性領域5aを有する半導体薄膜5と、活性領域5aを横切るように設けられたゲート電極9とを備えた薄膜半導体装置において、活性領域5aのうち、少なくともゲート電極9と重なるチャネル部Cでは、結晶状態がチャネル長L方向に周期的に変化している。そして、略同一の結晶状態がチャネル部Cを横切っている。チャネル部Cには、結晶状態の変化の周期が2周期以上の所定数で設けられており、周期毎に非晶質帯51と結晶質帯52とが交互に設けられている。
【選択図】図1
Description
図1(a)は、実施形態の薄膜半導体装置の構成を示す平面図であり、図1(b)は図1(a)におけるA部の拡大平面図である。これらの図に示す薄膜半導体装置1は、同一の基板3上に複数の薄膜トランジスタTFTを設けてなる。尚、図面においては、1つの薄膜トランジスタTFTのみを図示している。
以下、図1および図2に示した構成の薄膜半導体装置1の製造方法を図4に基づき、必要に応じて他の図面を参照しつつ説明する。尚、図4は、図1におけるチャネル長L方向のx−x’断面に対応する。
図6を用いて説明した結晶化工程を適用して複数の薄膜トランジスタを形成した(図1参照)。
図7を用いて説明した結晶化工程を適用して複数の薄膜トランジスタを形成した(図1参照)。
実施例2と同様に、図7を用いて説明した結晶化工程を適用して複数の薄膜トランジスタを形成した(図1参照)。
従来構成のエキシマレーザーを用いた結晶化工程を適用して複数の薄膜トランジスタを形成した。
Claims (11)
- エネルギービームの照射によって多結晶化した活性領域を有する半導体薄膜と、当該活性領域を横切るように設けられたゲート電極とを備えた薄膜半導体装置において、
前記ゲート電極と重なる前記活性領域のチャネル部では、結晶状態がチャネル長方向に周期的に変化しており、略同一の結晶状態が当該チャネル部を横切っている
ことを特徴とする薄膜半導体装置。 - 請求項1記載の薄膜半導体装置において、
前記チャネル部には、前記結晶状態の変化の周期が2周期以上の所定数で設けられている
ことを特徴とする薄膜半導体装置。 - 請求項1記載の薄膜半導体装置において、
前記結晶状態の変化の周期毎に、前記活性領域を横切る状態で非晶質帯と結晶質帯とが交互に設けられている
ことを特徴とする薄膜半導体装置。 - 請求項3記載の薄膜半導体装置において、
前記結晶質帯には、当該結晶質帯の幅方向にわたる大きさの結晶粒が、当該結晶質帯の延設方向に配列されている
ことを特徴とする薄膜半導体装置。 - 請求項3記載の薄膜半導体装置において、
前記結晶質帯には、当該結晶質帯の延設方向に凸となる三日月形状の結晶粒が当該結晶質帯の延設方向に沿って配列されている
ことを特徴とする薄膜半導体装置。 - 請求項5記載の薄膜半導体装置において、
前記結晶粒は、前記結晶質帯の延設方向に沿ってエネルギービームを走査させることによって形成された結晶粒である
ことを特徴とする薄膜半導体装置。 - 半導体薄膜にエネルギービームを照射することにより当該半導体薄膜の活性領域を結晶化する工程と、前記活性領域を横切る形状にゲート電極を形成する工程とを備えた薄膜半導体装置の製造方法において、
前記活性領域を結晶化する工程では、前記エネルギービームの照射位置を所定の移動方向に移動させることにより、当該移動方向に沿って結晶状態を周期的に変化させながら当該活性領域を多結晶化し、
前記ゲート電極を形成する工程では、前記結晶状態が略同一な方向に沿って当該ゲート電極を形成する
ことを特徴とする薄膜半導体装置の製造方法。 - 請求項7記載の薄膜半導体装置の製造方法において、
前記活性領域を結晶化する工程では、前記エネルギービームが重ならない範囲で当該エネルギービームの照射位置を所定の移動方向に移動させることにより、前記半導体薄膜を多結晶化させた結晶質帯の間に周期的に非晶質帯を残す
ことを特徴とする薄膜半導体装置の製造方法。 - 請求項7記載の薄膜半導体装置の製造方法において、
前記活性領域を結晶化する工程では、前記エネルギービームの各照射位置において前記移動方向と異なる走査方向に当該エネルギービームを走査させながら照射することにより、当該走査方向に沿って結晶粒を配列形成する
ことを特徴とする薄膜半導体装置の製造方法。 - 請求項9記載の薄膜半導体装置の製造方法において、
前記活性領域を結晶化する工程では、爆発的結晶化が生じるように前記エネルギービームの照射を行う
ことを特徴とする薄膜半導体装置の製造方法。 - 請求項7記載の薄膜半導体装置の製造方法において、
前記活性領域を結晶化する工程では、前記エネルギービームのビームプロファイルをガウシアンカーブにする
ことを特徴とする薄膜半導体装置の製造方法。
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JP2006347053A JP4169073B2 (ja) | 2006-03-13 | 2006-12-25 | 薄膜半導体装置および薄膜半導体装置の製造方法 |
TW096107708A TW200802891A (en) | 2006-03-13 | 2007-03-06 | Thin film semiconductor device and method for manufacturing the same |
KR1020070023994A KR101360302B1 (ko) | 2006-03-13 | 2007-03-12 | 박막 반도체 장치 및 박막 반도체 장치의 제조 방법 |
CN200710086328XA CN101038937B (zh) | 2006-03-13 | 2007-03-13 | 薄膜半导体器件及其制造方法 |
US11/685,550 US7521712B2 (en) | 2006-03-13 | 2007-03-13 | Thin film semiconductor device |
US12/134,698 US7598160B2 (en) | 2006-03-13 | 2008-06-06 | Method for manufacturing thin film semiconductor |
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Cited By (2)
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JP2011528496A (ja) * | 2008-07-18 | 2011-11-17 | パナソニック株式会社 | 半導体物質 |
JP2022048178A (ja) * | 2008-07-31 | 2022-03-25 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
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CN103854987B (zh) * | 2012-12-04 | 2017-08-25 | 中芯国际集成电路制造(上海)有限公司 | 伪栅的形成方法、选择性沉积硅的方法和插塞的形成方法 |
KR20150112288A (ko) * | 2014-03-27 | 2015-10-07 | 삼성전자주식회사 | 스트레처블 소자와 그 제조방법 및 스트레처블 소자를 포함하는 전자장치 |
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JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
US6479837B1 (en) * | 1998-07-06 | 2002-11-12 | Matsushita Electric Industrial Co., Ltd. | Thin film transistor and liquid crystal display unit |
US6548843B2 (en) * | 1998-11-12 | 2003-04-15 | International Business Machines Corporation | Ferroelectric storage read-write memory |
GB2358079B (en) * | 2000-01-07 | 2004-02-18 | Seiko Epson Corp | Thin-film transistor |
JP2003037061A (ja) * | 2001-07-24 | 2003-02-07 | Sharp Corp | 半導体薄膜およびその形成方法並びに半導体装置 |
US7232714B2 (en) * | 2001-11-30 | 2007-06-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US7394626B2 (en) * | 2002-11-01 | 2008-07-01 | Nec Corporation | Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same |
JP2005012030A (ja) * | 2003-06-19 | 2005-01-13 | Sharp Corp | 結晶性半導体膜の製造方法、結晶性半導体膜、半導体装置の製造方法および半導体装置 |
JP4408668B2 (ja) * | 2003-08-22 | 2010-02-03 | 三菱電機株式会社 | 薄膜半導体の製造方法および製造装置 |
JP2006077834A (ja) | 2004-09-08 | 2006-03-23 | Nsk Ltd | ボールねじ機構 |
JP2007281420A (ja) * | 2006-03-13 | 2007-10-25 | Sony Corp | 半導体薄膜の結晶化方法 |
JP2007281421A (ja) * | 2006-03-13 | 2007-10-25 | Sony Corp | 半導体薄膜の結晶化方法 |
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JP2011528496A (ja) * | 2008-07-18 | 2011-11-17 | パナソニック株式会社 | 半導体物質 |
JP2022048178A (ja) * | 2008-07-31 | 2022-03-25 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
Also Published As
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US7598160B2 (en) | 2009-10-06 |
CN101038937A (zh) | 2007-09-19 |
TW200802891A (en) | 2008-01-01 |
US20070212825A1 (en) | 2007-09-13 |
US20080241981A1 (en) | 2008-10-02 |
US7521712B2 (en) | 2009-04-21 |
CN101038937B (zh) | 2010-06-02 |
KR101360302B1 (ko) | 2014-02-10 |
TWI342622B (ja) | 2011-05-21 |
JP4169073B2 (ja) | 2008-10-22 |
KR20070093356A (ko) | 2007-09-18 |
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