JP2011528496A - 半導体物質 - Google Patents
半導体物質 Download PDFInfo
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- JP2011528496A JP2011528496A JP2011517986A JP2011517986A JP2011528496A JP 2011528496 A JP2011528496 A JP 2011528496A JP 2011517986 A JP2011517986 A JP 2011517986A JP 2011517986 A JP2011517986 A JP 2011517986A JP 2011528496 A JP2011528496 A JP 2011528496A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 239000000463 material Substances 0.000 title claims description 39
- 239000002019 doping agent Substances 0.000 claims abstract description 33
- 239000002105 nanoparticle Substances 0.000 claims abstract description 18
- 239000000470 constituent Substances 0.000 claims abstract description 10
- 239000002073 nanorod Substances 0.000 claims abstract description 10
- 239000011859 microparticle Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 36
- 239000002245 particle Substances 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000010408 film Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- -1 microrod Substances 0.000 claims description 4
- 239000013081 microcrystal Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 5
- 239000007788 liquid Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 239000002159 nanocrystal Substances 0.000 claims 2
- 239000010410 layer Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 7
- 239000011162 core material Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007725 thermal activation Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Thin Film Transistor (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (22)
- 半導体デバイスであって、結晶ミクロ粒子、ミクロロッド、結晶ナノ粒子、または、ナノロッドの形状で半導体チャネル構成物質から形成され、かつ、半導体ドーパントでドープされたチャネル層を備える
半導体デバイス。 - 前記チャネル層は、当該チャネル層に電気的に結合された電極間で、ミクロ粒子、ミクロロッド、ナノ粒子、またはナノロッドの界面を少なくとも1つ備え、前記界面は半導体ドーパントでドープされている
請求項1に記載の半導体デバイス。 - 結晶粒子間の前記界面は、結晶物質から構成される
請求項2に記載の半導体デバイス。 - 結晶粒子間の前記界面は、非晶質物質から構成される
請求項2に記載の半導体デバイス。 - 前記ドープされた界面の電気抵抗率は、本来の界面の抵抗率より小さい
請求項2〜4のいずれか1項に記載の半導体デバイス。 - 前記チャネル層は、チャネル厚さの方向に半導体ドーパント濃度の勾配がある
請求項1〜5のいずれか1項に記載の半導体デバイス。 - 前記デバイスは、薄膜トランジスタ、ダイオード、または太陽電池のうちのいずれか1つである
請求項1〜6のいずれか1項に記載の半導体デバイス。 - 前記チャネル物質は、結晶構造、ミクロ結晶構造、ナノ結晶構造、多形性構造、またはそれらの混合物である
請求項1〜7のいずれか1項に記載の半導体デバイス。 - 前記半導体物質は、元素半導体または化合物半導体である
請求項1〜8のいずれか1項に記載の半導体デバイス。 - 前記元素半導体は、IVb族元素のうちの1つから成る
請求項9に記載の半導体デバイス。 - 前記化合物半導体は、酸化物化合物、炭化物化合物、または窒化物化合物のうちのいずれか1つから成る
請求項1に記載の半導体デバイス。 - 前記チャネル部は、表面ドープされる
請求項1〜11のいずれか1項に記載の半導体デバイス。 - 前記チャネルは、第1金属原子を含む金属酸化物半導体から構成され、前記半導体ドーパントは、第2金属原子を含み、前記第1金属原子の電子親和力は、前記第2金属原子の電子親和力よりも0.05電子ボルトより大きい
請求項1に記載の半導体デバイス。 - 薄膜デバイスで用いられる半導体物質のチャネル形成方法であって、
結晶ミクロ粒子、ミクロロッド、結晶ナノ粒子、または、ナノロッドの形状でチャネル構成物質を与える提供ステップと、
前記膜を半導体ドーパントと接触させることによって、前記粒子またはロッド間の結合をドーピングするドーピングステップと、
隣接する前記粒子またはロッドが互いに接触するように膜を形成する、前記粒子またはロッドの処理ステップとを含む
チャネル形成方法。 - 前記デバイスは、薄膜トランジスタ、ダイオード、または太陽電池のうちのいずれかである
請求項14に記載のチャネル形成方法。 - 前記チャネル物質は、結晶構造、ミクロ結晶構造、ナノ結晶構造、多形性構造、またはそれらの混合物である
請求項14または15に記載のチャネル形成方法。 - 前記半導体物質は、元素半導体または化合物半導体である
請求項14、15または16に記載のチャネル形成方法。 - 前記ドーピングステップは、バルクまたは表面ドーピングである
請求項14〜17のいずれか1項に記載のチャネル形成方法。 - 前記処理ステップは、前記チャネル物質のヒュージング処理または焼結処理を含む
請求項14〜18のいずれか1項に記載のチャネル形成方法。 - 前記粒子またはロッド間の界面の前記ドーピングステップは、前記半導体ドーパントを含有する液体の成膜処理を含む
請求項14〜19のいずれか1項に記載のチャネル形成方法。 - 前記半導体物質は、第1金属原子を含む金属酸化物であり、前記液体は、前記第1金属原子の電子親和力より小さく、少なくとも0.05電子ボルトより大きな電子親和力を有する第2金属原子を含む
請求項18に記載のチャネル形成方法。 - 前記半導体物質はZnOであり、前記第2金属原子はAlである
請求項19に記載のチャネル形成方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/GB2008/002471 WO2010007333A1 (en) | 2008-07-18 | 2008-07-18 | Semiconductor material |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011528496A true JP2011528496A (ja) | 2011-11-17 |
JP5444342B2 JP5444342B2 (ja) | 2014-03-19 |
Family
ID=39774053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011517986A Expired - Fee Related JP5444342B2 (ja) | 2008-07-18 | 2008-07-18 | 半導体デバイスおよびチャネル形成方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8362479B2 (ja) |
EP (1) | EP2304802B8 (ja) |
JP (1) | JP5444342B2 (ja) |
WO (1) | WO2010007333A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017533588A (ja) * | 2014-10-20 | 2017-11-09 | ケンブリッジ・エンタープライズ・リミテッドCambridge Enterprise Limited | トランジスタデバイス |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102893368B (zh) | 2010-09-13 | 2016-01-27 | 松下电器产业株式会社 | 用于制造金属氧化物半导体的方法 |
JP5597510B2 (ja) * | 2010-10-14 | 2014-10-01 | 出光興産株式会社 | コアシェル半導体微粒子 |
CN103123902A (zh) * | 2013-01-16 | 2013-05-29 | 京东方科技集团股份有限公司 | 半导体层结构、多晶硅薄膜晶体管、制作方法、显示装置 |
TWI591809B (zh) | 2015-08-04 | 2017-07-11 | 國立交通大學 | 光感測裝置及其應用 |
Citations (8)
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JP2003059834A (ja) * | 2001-05-31 | 2003-02-28 | Canon Inc | 結晶性薄膜及びその製造方法、該結晶性薄膜を用いた素子、該素子を用いて構成された回路、並びに該素子もしくは該回路を含む装置 |
JP2004532133A (ja) * | 2001-03-30 | 2004-10-21 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置 |
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JP2007281423A (ja) * | 2006-03-13 | 2007-10-25 | Sony Corp | 薄膜半導体装置および薄膜半導体装置の製造方法 |
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-
2008
- 2008-07-18 JP JP2011517986A patent/JP5444342B2/ja not_active Expired - Fee Related
- 2008-07-18 WO PCT/GB2008/002471 patent/WO2010007333A1/en active Application Filing
- 2008-07-18 EP EP08775996.5A patent/EP2304802B8/en not_active Not-in-force
-
2011
- 2011-01-07 US US12/986,535 patent/US8362479B2/en active Active
Patent Citations (8)
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JP2004532133A (ja) * | 2001-03-30 | 2004-10-21 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・カリフォルニア | ナノ構造及びナノワイヤーの組立方法並びにそれらから組立てられた装置 |
JP2003059834A (ja) * | 2001-05-31 | 2003-02-28 | Canon Inc | 結晶性薄膜及びその製造方法、該結晶性薄膜を用いた素子、該素子を用いて構成された回路、並びに該素子もしくは該回路を含む装置 |
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Cited By (1)
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JP2017533588A (ja) * | 2014-10-20 | 2017-11-09 | ケンブリッジ・エンタープライズ・リミテッドCambridge Enterprise Limited | トランジスタデバイス |
Also Published As
Publication number | Publication date |
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US20110101344A1 (en) | 2011-05-05 |
EP2304802B1 (en) | 2013-08-28 |
EP2304802B8 (en) | 2013-12-04 |
EP2304802A1 (en) | 2011-04-06 |
US8362479B2 (en) | 2013-01-29 |
WO2010007333A1 (en) | 2010-01-21 |
JP5444342B2 (ja) | 2014-03-19 |
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