TW200802891A - Thin film semiconductor device and method for manufacturing the same - Google Patents

Thin film semiconductor device and method for manufacturing the same

Info

Publication number
TW200802891A
TW200802891A TW096107708A TW96107708A TW200802891A TW 200802891 A TW200802891 A TW 200802891A TW 096107708 A TW096107708 A TW 096107708A TW 96107708 A TW96107708 A TW 96107708A TW 200802891 A TW200802891 A TW 200802891A
Authority
TW
Taiwan
Prior art keywords
thin film
semiconductor device
manufacturing
same
gate electrode
Prior art date
Application number
TW096107708A
Other languages
English (en)
Other versions
TWI342622B (zh
Inventor
Akio Machida
Toshio Fujino
Tadahiro Kono
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200802891A publication Critical patent/TW200802891A/zh
Application granted granted Critical
Publication of TWI342622B publication Critical patent/TWI342622B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
TW096107708A 2006-03-13 2007-03-06 Thin film semiconductor device and method for manufacturing the same TW200802891A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006067273 2006-03-13
JP2006347053A JP4169073B2 (ja) 2006-03-13 2006-12-25 薄膜半導体装置および薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200802891A true TW200802891A (en) 2008-01-01
TWI342622B TWI342622B (zh) 2011-05-21

Family

ID=38479455

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096107708A TW200802891A (en) 2006-03-13 2007-03-06 Thin film semiconductor device and method for manufacturing the same

Country Status (5)

Country Link
US (2) US7521712B2 (zh)
JP (1) JP4169073B2 (zh)
KR (1) KR101360302B1 (zh)
CN (1) CN101038937B (zh)
TW (1) TW200802891A (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010007333A1 (en) * 2008-07-18 2010-01-21 Panasonic Corporation Semiconductor material
TWI413260B (zh) * 2008-07-31 2013-10-21 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI500159B (zh) * 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
US9123820B2 (en) * 2010-05-31 2015-09-01 Sharp Kabushiki Kaisha Thin film transistor including semiconductor oxide layer having reduced resistance regions
CN103854987B (zh) * 2012-12-04 2017-08-25 中芯国际集成电路制造(上海)有限公司 伪栅的形成方法、选择性沉积硅的方法和插塞的形成方法
KR20150112288A (ko) * 2014-03-27 2015-10-07 삼성전자주식회사 스트레처블 소자와 그 제조방법 및 스트레처블 소자를 포함하는 전자장치
US11955561B2 (en) * 2021-07-22 2024-04-09 Taiwan Semiconductor Manufacturing Company Limited Carrier modification devices for avoiding channel length reduction and methods for fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3642546B2 (ja) * 1997-08-12 2005-04-27 株式会社東芝 多結晶半導体薄膜の製造方法
KR20010071526A (ko) * 1998-07-06 2001-07-28 모리시타 요이찌 박막 트랜지스터와 액정표시장치
US6548843B2 (en) * 1998-11-12 2003-04-15 International Business Machines Corporation Ferroelectric storage read-write memory
GB2358079B (en) * 2000-01-07 2004-02-18 Seiko Epson Corp Thin-film transistor
JP2003037061A (ja) * 2001-07-24 2003-02-07 Sharp Corp 半導体薄膜およびその形成方法並びに半導体装置
US7232714B2 (en) * 2001-11-30 2007-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7394626B2 (en) * 2002-11-01 2008-07-01 Nec Corporation Magnetoresistance device with a diffusion barrier between a conductor and a magnetoresistance element and method of fabricating the same
JP2005012030A (ja) * 2003-06-19 2005-01-13 Sharp Corp 結晶性半導体膜の製造方法、結晶性半導体膜、半導体装置の製造方法および半導体装置
JP4408668B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法および製造装置
JP2006077834A (ja) 2004-09-08 2006-03-23 Nsk Ltd ボールねじ機構
JP2007281420A (ja) * 2006-03-13 2007-10-25 Sony Corp 半導体薄膜の結晶化方法
JP2007281421A (ja) * 2006-03-13 2007-10-25 Sony Corp 半導体薄膜の結晶化方法

Also Published As

Publication number Publication date
KR101360302B1 (ko) 2014-02-10
TWI342622B (zh) 2011-05-21
JP4169073B2 (ja) 2008-10-22
US7598160B2 (en) 2009-10-06
CN101038937A (zh) 2007-09-19
US7521712B2 (en) 2009-04-21
US20080241981A1 (en) 2008-10-02
CN101038937B (zh) 2010-06-02
KR20070093356A (ko) 2007-09-18
JP2007281423A (ja) 2007-10-25
US20070212825A1 (en) 2007-09-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees