CN101030556B - 半导体器件的制造方法 - Google Patents
半导体器件的制造方法 Download PDFInfo
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- CN101030556B CN101030556B CN2007100072315A CN200710007231A CN101030556B CN 101030556 B CN101030556 B CN 101030556B CN 2007100072315 A CN2007100072315 A CN 2007100072315A CN 200710007231 A CN200710007231 A CN 200710007231A CN 101030556 B CN101030556 B CN 101030556B
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- 229910000484 niobium oxide Inorganic materials 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-054637 | 2006-03-01 | ||
JP2006054637A JP2007234861A (ja) | 2006-03-01 | 2006-03-01 | 半導体装置の製造方法 |
JP2006054637 | 2006-03-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101030556A CN101030556A (zh) | 2007-09-05 |
CN101030556B true CN101030556B (zh) | 2012-04-04 |
Family
ID=38471947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007100072315A Expired - Fee Related CN101030556B (zh) | 2006-03-01 | 2007-01-25 | 半导体器件的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7601581B2 (zh) |
JP (1) | JP2007234861A (zh) |
CN (1) | CN101030556B (zh) |
Families Citing this family (43)
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US7616120B1 (en) * | 2007-02-28 | 2009-11-10 | Impinj, Inc. | Multiple RF-port modulator for RFID tag |
JP2009016462A (ja) * | 2007-07-03 | 2009-01-22 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US7875516B2 (en) * | 2007-09-14 | 2011-01-25 | Qimonda Ag | Integrated circuit including a first gate stack and a second gate stack and a method of manufacturing |
DE102007045058B4 (de) * | 2007-09-20 | 2015-07-02 | Qimonda Ag | Verfahren zum Herstellen einer integrierten Schaltung einschließlich verschiedener Typen von Gate-Stacks in ersten und zweiten Bereichen |
US8072072B2 (en) * | 2007-09-20 | 2011-12-06 | Qimonda Ag | Integrated circuit including different types of gate stacks, corresponding intermediate integrated circuit structure and corresponding integrated circuit |
US7732872B2 (en) | 2007-10-25 | 2010-06-08 | International Business Machines Corporation | Integration scheme for multiple metal gate work function structures |
JP2009182161A (ja) * | 2008-01-31 | 2009-08-13 | Renesas Technology Corp | 半導体装置 |
US20100019351A1 (en) * | 2008-07-28 | 2010-01-28 | Albert Ratnakumar | Varactors with enhanced tuning ranges |
US8735983B2 (en) * | 2008-11-26 | 2014-05-27 | Altera Corporation | Integrated circuit transistors with multipart gate conductors |
US20100127331A1 (en) * | 2008-11-26 | 2010-05-27 | Albert Ratnakumar | Asymmetric metal-oxide-semiconductor transistors |
US8673715B2 (en) | 2008-12-30 | 2014-03-18 | Micron Technology, Inc. | Memory device and method of fabricating thereof |
JP5898294B2 (ja) * | 2009-01-15 | 2016-04-06 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
WO2010082328A1 (ja) | 2009-01-15 | 2010-07-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2010245160A (ja) | 2009-04-02 | 2010-10-28 | Renesas Electronics Corp | 半導体装置の製造方法 |
JP5329294B2 (ja) * | 2009-04-30 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5550286B2 (ja) * | 2009-08-26 | 2014-07-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5025703B2 (ja) * | 2009-09-25 | 2012-09-12 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR101686089B1 (ko) | 2010-02-19 | 2016-12-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2011192841A (ja) * | 2010-03-15 | 2011-09-29 | Toshiba Corp | 半導体装置 |
US8138797B1 (en) | 2010-05-28 | 2012-03-20 | Altera Corporation | Integrated circuits with asymmetric pass transistors |
FR2968132B1 (fr) * | 2010-11-26 | 2012-12-28 | Commissariat Energie Atomique | Dispositif mémoire multi-niveaux |
US8207009B2 (en) * | 2011-04-19 | 2012-06-26 | Primestar Solar, Inc. | Methods of temporally varying the laser intensity during scribing a photovoltaic device |
JP2012253241A (ja) * | 2011-06-03 | 2012-12-20 | Sony Corp | 半導体集積回路およびその製造方法 |
JP6116149B2 (ja) | 2011-08-24 | 2017-04-19 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8837252B2 (en) | 2012-05-31 | 2014-09-16 | Atmel Corporation | Memory decoder circuit |
US20140167142A1 (en) * | 2012-12-14 | 2014-06-19 | Spansion Llc | Use Disposable Gate Cap to Form Transistors, and Split Gate Charge Trapping Memory Cells |
JP6029989B2 (ja) * | 2013-01-25 | 2016-11-24 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
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US8076192B2 (en) | 2011-12-13 |
JP2007234861A (ja) | 2007-09-13 |
US20070207575A1 (en) | 2007-09-06 |
US20100009529A1 (en) | 2010-01-14 |
CN101030556A (zh) | 2007-09-05 |
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