CN101006571A - 蚀刻与清洗衬底的系统和方法 - Google Patents

蚀刻与清洗衬底的系统和方法 Download PDF

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Publication number
CN101006571A
CN101006571A CNA2005800285221A CN200580028522A CN101006571A CN 101006571 A CN101006571 A CN 101006571A CN A2005800285221 A CNA2005800285221 A CN A2005800285221A CN 200580028522 A CN200580028522 A CN 200580028522A CN 101006571 A CN101006571 A CN 101006571A
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China
Prior art keywords
substrate
solution
light
layer
applying
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Pending
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CNA2005800285221A
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English (en)
Chinese (zh)
Inventor
M·克罗立克
J·M·柏依
K·蜜可海丽
M·瑞夫肯
F·C·瑞德克
J·M·德赖瑞厄斯
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Lam Research Corp
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Lam Research Corp
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    • H10P50/287—
    • H10P52/00—
    • H10P50/00—
    • H10P72/0424—

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  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
CNA2005800285221A 2004-06-28 2005-06-23 蚀刻与清洗衬底的系统和方法 Pending CN101006571A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88000704A 2004-06-28 2004-06-28
US10/880,007 2004-06-28

Publications (1)

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CN101006571A true CN101006571A (zh) 2007-07-25

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CNA2005800285221A Pending CN101006571A (zh) 2004-06-28 2005-06-23 蚀刻与清洗衬底的系统和方法

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EP (1) EP1782461A4 (enExample)
JP (1) JP2008504714A (enExample)
KR (1) KR20070026687A (enExample)
CN (1) CN101006571A (enExample)
TW (1) TWI271793B (enExample)
WO (1) WO2006012174A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112534551A (zh) * 2018-09-04 2021-03-19 东京毅力科创株式会社 用于湿法刻蚀的光调整刻蚀剂反应性
CN113287189A (zh) * 2018-12-14 2021-08-20 东京毅力科创株式会社 使用经照射的刻蚀溶液降低材料粗糙度的方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010236088A (ja) * 2009-03-09 2010-10-21 Hitachi High-Technologies Corp マスク部材のクリーニング装置及びクリーニング方法並びに有機ｅｌディスプレイ
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
KR101992422B1 (ko) * 2012-08-14 2019-06-24 주식회사 동진쎄미켐 광분해 고도산화공정을 이용한 금속막의 연마 장치 및 방법
KR102095084B1 (ko) * 2013-11-11 2020-03-30 도쿄엘렉트론가부시키가이샤 자외선 처리를 이용하여 금속 하드마스크의 제거를 강화시키는 시스템 및 방법
KR102166974B1 (ko) * 2013-11-11 2020-10-16 도쿄엘렉트론가부시키가이샤 에칭 후 폴리머의 제거 및 하드마스크 제거의 향상을 위한 방법 및 하드웨어
US12112959B2 (en) 2018-09-04 2024-10-08 Tokyo Electron Limited Processing systems and platforms for roughness reduction of materials using illuminated etch solutions
CN113302730B (zh) * 2018-12-14 2024-11-22 东京毅力科创株式会社 使用照射刻蚀溶液来降低材料粗糙度的加工系统和平台

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512123A (en) * 1992-05-19 1996-04-30 Maxwell Laboratories Method for using pulsed optical energy to increase the bondability of a surface
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate
US6503464B1 (en) * 1999-08-12 2003-01-07 Sipec Corporation Ultraviolet processing apparatus and ultraviolet processing method
JP3961240B2 (ja) * 2001-06-28 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112534551A (zh) * 2018-09-04 2021-03-19 东京毅力科创株式会社 用于湿法刻蚀的光调整刻蚀剂反应性
CN112534551B (zh) * 2018-09-04 2024-03-05 东京毅力科创株式会社 用于湿法刻蚀的光调整刻蚀剂反应性
CN113287189A (zh) * 2018-12-14 2021-08-20 东京毅力科创株式会社 使用经照射的刻蚀溶液降低材料粗糙度的方法
CN113287189B (zh) * 2018-12-14 2024-06-07 东京毅力科创株式会社 使用经照射的刻蚀溶液降低材料粗糙度的方法

Also Published As

Publication number Publication date
JP2008504714A (ja) 2008-02-14
TWI271793B (en) 2007-01-21
KR20070026687A (ko) 2007-03-08
EP1782461A4 (en) 2008-05-28
WO2006012174A3 (en) 2006-09-14
WO2006012174A2 (en) 2006-02-02
EP1782461A2 (en) 2007-05-09
TW200608478A (en) 2006-03-01

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