CN1006424B - 介电组合物 - Google Patents
介电组合物Info
- Publication number
- CN1006424B CN1006424B CN86101812A CN86101812A CN1006424B CN 1006424 B CN1006424 B CN 1006424B CN 86101812 A CN86101812 A CN 86101812A CN 86101812 A CN86101812 A CN 86101812A CN 1006424 B CN1006424 B CN 1006424B
- Authority
- CN
- China
- Prior art keywords
- dielectric
- composition
- weight
- glass
- roasting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 42
- 239000007787 solid Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 26
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 24
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 238000005266 casting Methods 0.000 claims description 22
- 239000007788 liquid Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 20
- 239000011819 refractory material Substances 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 16
- 229920000642 polymer Polymers 0.000 claims description 16
- 239000002904 solvent Substances 0.000 claims description 16
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- -1 CaZrO 3 Inorganic materials 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 8
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000002346 layers by function Substances 0.000 claims description 6
- 230000032696 parturition Effects 0.000 claims description 6
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 239000000835 fiber Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 5
- 239000004575 stone Substances 0.000 claims description 5
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 claims description 4
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 claims description 4
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 4
- 229910052878 cordierite Inorganic materials 0.000 claims description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 claims description 3
- 239000006185 dispersion Substances 0.000 claims description 3
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 229910052839 forsterite Inorganic materials 0.000 claims description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 125000005250 alkyl acrylate group Chemical group 0.000 claims 1
- 238000009472 formulation Methods 0.000 claims 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 claims 1
- 229920000620 organic polymer Polymers 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 7
- 229920001577 copolymer Polymers 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 239000012046 mixed solvent Substances 0.000 description 6
- 239000004014 plasticizer Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical class CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 5
- IRIAEXORFWYRCZ-UHFFFAOYSA-N Butylbenzyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCC1=CC=CC=C1 IRIAEXORFWYRCZ-UHFFFAOYSA-N 0.000 description 4
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 4
- 125000005907 alkyl ester group Chemical group 0.000 description 4
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000280 densification Methods 0.000 description 4
- 239000000976 ink Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- FLKPEMZONWLCSK-UHFFFAOYSA-N diethyl phthalate Chemical compound CCOC(=O)C1=CC=CC=C1C(=O)OCC FLKPEMZONWLCSK-UHFFFAOYSA-N 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- AJDIZQLSFPQPEY-UHFFFAOYSA-N 1,1,2-Trichlorotrifluoroethane Chemical compound FC(F)(Cl)C(F)(Cl)Cl AJDIZQLSFPQPEY-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical class CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920001479 Hydroxyethyl methyl cellulose Polymers 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- CYTYCFOTNPOANT-UHFFFAOYSA-N Perchloroethylene Chemical group ClC(Cl)=C(Cl)Cl CYTYCFOTNPOANT-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920002367 Polyisobutene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 241000270708 Testudinidae Species 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000005600 alkyl phosphonate group Chemical group 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- CNLWCVNCHLKFHK-UHFFFAOYSA-N aluminum;lithium;dioxido(oxo)silane Chemical compound [Li+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O CNLWCVNCHLKFHK-UHFFFAOYSA-N 0.000 description 1
- 229940072049 amyl acetate Drugs 0.000 description 1
- PGMYKACGEOXYJE-UHFFFAOYSA-N anhydrous amyl acetate Natural products CCCCCOC(C)=O PGMYKACGEOXYJE-UHFFFAOYSA-N 0.000 description 1
- 239000002519 antifouling agent Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- OCKPCBLVNKHBMX-UHFFFAOYSA-N n-butyl-benzene Natural products CCCCC1=CC=CC=C1 OCKPCBLVNKHBMX-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- ZXRDVSMSMOZCPT-UHFFFAOYSA-N phosphorodithious acid Chemical compound OP(S)S ZXRDVSMSMOZCPT-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002689 polyvinyl acetate Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical compound [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 description 1
- 239000008247 solid mixture Substances 0.000 description 1
- 229950011008 tetrachloroethylene Drugs 0.000 description 1
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 238000004017 vitrification Methods 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910021489 α-quartz Inorganic materials 0.000 description 1
- 229910052644 β-spodumene Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/07—Glass compositions containing silica with less than 40% silica by weight containing lead
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C12/00—Powdered glass; Bead compositions
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
- C03C3/105—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/102—Glass compositions containing silica with 40% to 90% silica, by weight containing lead
- C03C3/108—Glass compositions containing silica with 40% to 90% silica, by weight containing lead containing boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Glass Compositions (AREA)
- Inorganic Insulating Materials (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
由细碎固体混合物组成的一种介电组合物，固体中含有(a)不结晶玻璃，其变形温度(Td)为580～625℃，软化点(Ts)为630～700℃，Ts-Td是50～75℃；(b)耐火材料，它们在825～900℃温度下几乎不溶于玻璃中。
Description
本发明涉及介电组合物，特别是用于制造多层电路的介电组合物。
为提高每单位面积电路的功能度，多年来已使用了多层厚膜电路。但电路技术的最新进展对于该用途介电材料提出了新要求。迄今用在多路电路的介电材料只是常用的厚膜介电组合物，是由分散在有机惰性介质中的细碎介电固体颗粒和无机粘合剂组成。这样的厚膜材料通常用网板印刷涂敷，虽然它们也可用其它方法涂敷。此种类型的厚膜材料现在和将来都非常重要。
用厚膜材料制造多层电路过程中，需考虑在涂敷下一层之前相继的印刷、干燥和烧制。例如典型情况下的多层电路要有二十层，六十道不同的加工步骤和二十次检验，以确保每一加工层的质量。如此复杂过程由于其大量的加工步骤及难免的高废品率，必然是昂贵的。
解决该问题的另一方法是应用介电带，在这种介电带中由很多层陶瓷介电材料（例如Al2O3）做成的薄片与导电材料印刷层交替敷设，但是由于需要大约1600℃高温来烧结Al2O3，就必须使用很高熔点的导电材料，例如钼和钨。不幸的是钼和钨的导电性均很差，难以满足非常高速、高复杂的线路。但由这些材料制成的多层电路又必须长时间在1600℃、还原气氛下焙烧，为获得合适致密的Al2O3，须经受48小时或更多时间的处理。
由此可见，对介电材料体系有如下要求：（1）不要太多的加工步骤，（2）能在较低温度下焙烧，从而可采用金、银和钯等常用导电材料，（3）仅几小时的焙烧就能致密化，（4）能在空气中焙烧。
鉴于先行技术的上述缺点，本发明的第一方面提出由下面细碎的固体混合物组成的介电组合物：
a.50-75%（重量）不结晶玻璃，其变形温度（Td）为580-625℃，软化点（Ts）为630-700℃，Ts-Td是50-75℃;
b.50-25%（重量）耐火材料，它在825-900℃温度下在玻璃中几乎是不溶的。
第二方面，本发明提出一种制造介电带的浇铸液配方，它是由上述的介电组合物分散在聚合粘合剂的非水挥发性溶剂中做成的。
第三方面，本发明提出在挠性基底上用上述分散液浇铸成生介电材料带的方法，挠性基底可用钢带或聚合物膜，然后加热浇铸层从其中除去挥发性溶剂。
第四方面，本发明提出形成多层互连的方法，包括下列步骤：
a.在用上述配方制成的生介电带上按电路图形阵列打通孔;
b.将厚膜导电组合物充填到通过a步骤得到的生介电带层的通孔中;
c.在用b步骤充填的生介电带层上，至少印刷一个电路图形厚膜功能层;
d.层压用c步骤得到的生介电带层，制得组件，内含由未焙烧生介电带隔开的许多未焙烧的功能层;
e.将d步骤得到的组件进行共焙烧。
过去已知道用“生介电材料带”来制造多层电路，这种生介电带用浇铸液在挠性基底（例如钢带或聚合物膜）上制成，浇铸液由细碎的介电材料分散在由聚合粘合剂和挥发性有机溶剂制成的溶液中，然后再加热浇铸层从其中除去挥发溶剂，许多专利公开了这种生介电带的组成及它们的应用，举例如下：
McIntosh在美国专利3，540，894中公开了一种陶瓷浇铸液
组成，内含低熔点硼硅酸铅、粘土和Al2O3、ZnZrsio5或Casio3结晶相。
Hurley等人在美国专利3，717，487中公开了一种陶瓷釉浆浓缩物，特别是将Al2O3分散于含有聚甲基丙烯酸酯粘合剂、溶剂和分散剂的釉浆中。
McIntosh在美国专利3，832，192中公开了一种含有硼硅酸铅玻璃和含有尖晶石相结晶物质的生介电片材。
Gardner等人在美国专利3，857，923中公开了一种生陶瓷带，内含麻来石（mullite），分散在如聚乙烯醇缩丁醛的粘合剂中。
Schmank在美国专利3，962，162中公开了一种制造生陶瓷片材的浇铸液，内含耐火材料粉末（如Al2O3），分散在聚酯、交联单体、自由基引发剂和脱膜剂制成的溶液中。
Smith等人在美国专利3，988，405中公开了一种浇铸液组成，内含陶瓷材料（特别是玻璃陶瓷），分散在丙烯酸共聚物的胶乳中，共聚用单体之一是可聚合的羧酸。
Anderson等人在美国专利4，080，414和4，104，345中公开了一种生陶瓷片材，由含有和不含溶剂的有机粘合剂浇铸液制成。
Swiss等人在美国专利4，153，491中公开了一种生陶瓷片材，由分散在有机粘合剂中的高Al2O3玻璃料组成。
Eggerding等人在美国专利4，272，500中提出了一种生陶瓷带，内含分散在聚乙烯醇缩丁醛粘合剂的麻来石和Al2O3混合物。
Smiley等人在美国专利4，183，991中公开了一种浇铸混合物，内含惰性填料颗粒，分散在聚合物-单体溶液中，用来制取薄
到0.1英寸（0.25厘米）的填充聚合物片材。
Kumer等人在美国专利4，301，324中提出一种生陶瓷带，其陶瓷材料是β-锂辉石或堇青石（Cordierite）。
玻璃
用于本发明组合物的玻璃配方本身要求不高，仅要求在使用条件下玻璃应是不结晶的，及下列其它性能：
变形温度（Td） 580～625℃
软化点（Ts） 630～700℃
Ts-Td50～75℃
已发现，具有上述物理性能的玻璃，当其在825-900℃下焙烧时，能很好燃烧尽有机物，并在焙烧温度下有合适粘度，以使该配方的烧结物具有高密度，即高于93%的理论密度值。如此得到了一种符合需要的非多孔层，它可防止导体电极层材料在焙烧时短路。
玻璃的变形温度和软化点的差值在50-75℃范围内是非常重要的，如果此差值大于75℃，那么玻璃在825-900℃下就不易流动;如果此差值小于50℃，那么玻璃的流动性太大，有很多玻璃流透移到电极中，造成难题（变形温度和软化点是用膨胀计来测定）。这两个变量的相关性解释了用于本发明玻璃的粘度-温度特性。
更重要的是在使用条件下玻璃是不结晶的，并且对配方中的耐火材料组分无明显溶解作用，这对于精确控制玻璃的粘度-温度特性和在焙烧时整个组合物的流变性能是必需的。当在825-900℃下焙烧30分钟时，溶解在玻璃中的耐火材料应不大于5%（重量），最好不大于3%（重量）。
同样，玻璃对耐火材料的相对量也非常重要，如果玻璃浓度超过
玻璃和耐火材料总量的75%（重量），那么所得到的焙烧层将产生不规则表面，多层结构变得太脆，表面的可焊性降低，连带的导电层性能也趋于下降。另一方面，如果玻璃量小于50%（重量），焙烧结构不够致密而且孔隙太多，另外焙烧结构也会失去平面性（不平滑）。考虑到这些因素，应在组成中含有55-70%（重量）玻璃，最好仍含61-67%（重量）玻璃。上述化合物中的玻璃浓度和补充耐火材料量，以及耐火材料在玻璃中的溶解范围内，显然，在焙烧过程中，液态玻璃被耐火材料所饱和。
耐火材料
如上所述，本发明的耐火材料组分是经选择的，以使它在玻璃中的溶解度为最小，在上述规范范围内，还要选择耐火材料的温度膨胀系数（TCE），例如，若想要有相对高的TCE，应选择α-石英、Al2O3、CaZrO3或镁橄榄石;另一方面，若要相对低的TCE，那么耐火材料应选用麻来石、堇青石和氧化锆。当然，用这些材料的混合物可以达到调节TCE成各种各样的中间值。
耐火材料的另一功能是控制烧结过程中整个体系的流变性能，耐火材料粒子会作为有形的障碍物限制玻璃流动，它们也抑制玻璃烧结，从而能促使较好地烧掉有机物。
为在烧结时得到高致密性，重要的是无机固体物应有非常细小的粒径，基本上粒子应不大于15μm，最好不大于10μm，以这个最大尺寸为限度，玻璃和耐火材料两者的粒子的50%点应不小于1μm，最好50%点应在2-5μm范围内。
聚合粘合剂
玻璃和耐火材料无机固体物分散的有机介质是由溶于挥发性有机
溶剂的聚合粘合剂组成，任选的还有另一些溶解物，如增塑剂、脱模剂、分散剂、剥离剂、防污剂和湿润剂等。
为得到较好的粘合效率，对90%（体软）陶瓷固体至少用5%（重量）的聚合粘合剂，但是最好在80%（重量）陶瓷固体中用不多于20%（重量）粘合剂。在这一限量中，相对于固体来说，希望最好用尽可能少的粘合剂，以减少有机物量，这些有机物须经裂解除去。并得到更佳的粒子堆积，以减少烧结时的收缩率。
过去用过各种聚合物作生介电的粘合剂，例如：聚乙烯醇缩丁醛、聚醋酸乙烯酯、聚乙烯醇、纤维素聚合物（如甲基纤维素、乙基纤维素、羟乙基纤维素、甲基羟乙基纤维素）、无规聚丙烯、聚乙烯、硅聚合物（如聚甲基硅氧烷、聚甲基苯基硅氧烷）、聚苯乙烯、丁苯共聚物、聚乙烯吡咯烷酮、聚酰胺、高分子量聚醚、环氧乙烷和环氧丙烷共聚物、聚丙烯酰胺和各种丙烯酸聚合物（如聚丙烯酸钠、聚丙烯酸低烷基酯、聚甲基丙烯酸低烷基酯，各种丙烯酸低烷基酯和甲基丙烯酸低烷基酯的共聚物的多元聚合物、甲基丙烯酸乙酯和丙烯酸甲酯二元共聚物及丙烯酸乙酯、甲基丙烯酸甲酯和甲基丙烯酸三元共聚物），用作釉浆浇铸材料的粘合剂。
最近，Usala在美国专利申请书501，978（1983年6月7日申请）中公开了一种有机粘合剂，它由下面相容的多元聚合物的混合物组成：0-100%（重量）甲基丙烯酸C1-8烷基酯、100-0%（重量）丙烯酸C1-8烷基酯和0-5%（重量）不饱和乙烯羧酸或胺。因为由这些聚合物做成的粘合剂只需少量就能粘结大量介电材料固体，能很好用在本发明的介电材料组成中，据此，上述Usala专利申请书中的粘合剂在本专利中作为参考。
在聚合物粘合剂中也常含有少量增塑剂，加入增塑剂是为了降低粘合剂聚合物的玻璃化温度（Tg），当然增塑剂的选择首先由改性的聚合物来决定。各种粘合剂体系中常用的增塑剂是：邻苯二甲酸二乙酯、邻苯二甲酸二丁酯、邻苯二甲酸二辛酯、邻苯二甲酸丁基苄基酯、磷酸烷基酯、聚二醇、甘油、聚环氧乙烷、羟乙基化的烷基酚、二硫代膦酸二烷基酯和聚异丁烯，其中邻苯二甲酸丁基苄基酯是丙烯酸聚合物体系中最常用增塑剂，因为它在相对低浓度下就显示高效。
有机溶剂
选择浇铸液中的溶剂组分是为了得到聚合物溶液，溶剂要有足够高挥发性，以使它能在大气压下低温加热从浇铸液中蒸出，此外溶剂的沸点必须低于含在有机介质中的其它添加剂的沸点和分解温度。例如，常用沸点低于150℃的溶剂，此溶剂包括丙酮、二甲苯、甲醇、乙醇、异丙醇、甲基乙基酮、1，1，1-三氯乙烷、四氯乙烯、醋酸戊酯、2，2，4-三乙基戊二醇-1，3-单异丁酸酯、甲苯、二氯甲烷和碳氟化合物。单组分溶剂不是聚合物的良溶剂，还需与其它溶剂混合，才适合作粘合剂聚合物溶剂。
特别好的溶剂是由1，1，1-三氯乙烷和含有不多于10%（重量）的以下各种溶剂组成：异丙醇、甲基乙基酮、二氯甲烷和碳氟化合物（如三氯氟甲烷和三氯三氟乙烷）。
最好在上述混合溶剂中掺合3-7%（重量）二氯乙烷，在制造介电带时它能防止聚合物粘合剂的龟裂和微裂;最好在混合溶剂中含3-6%（重量）异丙醇，它可有效地降低浇铸浆料粘度;最好含4-8%（重量）甲基乙基酮，因为它对聚合物有很好的溶解性，且挥发性稍低;从安全考虑最好含6.5-9.3%（重量）挥发性的碳氟化合物，
可提高混合溶剂的闪点。为获得合适闪点，虽然至少要加6.5%（重量）碳氟化合物（ASTM泰格闭杯法），但也不能高于9.0%（重量），以免影响混合溶剂对聚合物的溶解性，推荐最好的混合溶剂组成如下：
1，1，1-三氯乙烷 70-83.5%（重量）
二氯甲烷 7-3
甲基乙基酮 9-4
异丙醇 6-3
碳氟化合物 9.3-6.5
涂敷
生介电带首先用作多层电子电路的介电或绝缘材料，生介电带卷的每一角冲切记录孔，其尺寸稍大于电路的实际尺寸。为连接多层电路的不同层，在生电介带上要有通孔，可用通常的机械冲孔法完成，也能用锐利的定焦点激光器去打穿生介电带，典型的通孔尺寸是0.006英寸到0.25英寸。将厚膜导电油墨充填到通孔以使层间互连，这种油墨常用标准网板印刷技术来涤敷，用网板印刷导电印刷线接通各线路层，也可在各层印刷电阻油墨或高介电电容油墨形成龟阻或电容元件。专用配方的用在多层电容器制造工业中的高介电常数的生介电带也可并入，作为多层线路的一部份。
每层电路接通后，将每一单层堆起、层压，用槽内压制模具确保层间准直，层压物用热水平切刀修整。焙烧是在标准的厚膜传送带炉内完成。
此处“焙烧”这一术语是指在氧化气氛中（例如在空气中）加热组件，到一定温度和足够时间，以挥发掉（燃烧掉）组件层间所有的
有机物，熔结各层间的玻璃、金属或介电材料，从而使介电层致密化。
应认识到层压阶段的技巧，层与层之间必须精确重合，使通孔能合适地连接到昆邻功能层的接触点。
“功能层”这一术语指的是印在生陶瓷带上具有导电、电阻、或电容功能的层。例如，前述一个典型的生介电带层可印刷上一个或多个电阻和/或电容以及导电电路。
实施例
实施例1
一种浇铸液是将下表中的无机固体物分散于混合溶剂中经球磨制成，用0.25英寸氧化铝球作磨料，经球磨机磨制14小时，浇铸液的粘度是2900厘泊（Brookfield RVT粘度计、5号锭子、20转/分），将此溶液浇铸到用硅树脂包复的Mylar（1）聚酯树脂膜上，制得生介电膜，以后在140°F（60℃）加热此浇铸膜，除去溶剂，所得膜的厚度为4.0±0.2密耳。浇铸液和玻璃的组成如下：
非晶态玻璃组成 %（重量）
PbO 17.2
B2O34.5
SiO256.5
Al2O39.1
CaO 8.6
Na2O 2.4
K2O 1.7
浇铸液组成 %（重量）
玻璃 33.5
Al2O317.1
SiO24.2
丙烯酸聚合物 3.6
甲基乙基酮 2.4
1，1，1-三氯乙烷 30.2
邻苯二甲酸二辛酯 1.9
异丙醇 1.8
二氯甲烷 2.1
氟利昂TF（2）3.2
性能
TCE 6.2ppm/℃
Td 590℃
Ts 660℃
密度 2.8克/厘米3
（1）杜邦公司的一种聚酯商品名。
（2）杜邦公司的商品名，为三氯三氟乙烷。
将上述浇铸膜切成若干3英寸×3英寸（7.6厘米×7.6厘米）片材，在压力3000磅/英寸2、70℃条件下于槽内压制模具中将几组八层片材压在一起，测量，并将层压物称重，在350℃下把层压物焙烧60分钟，以除掉有机物，以后在空气中于最高点温度850℃下焙烧15分钟。加热和冷却周期为90分钟。测量焙烧后的层压物，
其x、y面的平均收缩率仅是11.9%。焙烧件的弯曲度在总尺寸范围内小于±2密耳（0.051毫米）。在25℃至300℃间TCE是7.9ppm/℃。焙烧件密度为2.9克/厘米3，为理论密度的97%。所以焙烧带的尺寸稳定性很好，1千赫下的介电常数值是8.0。
实施例2
用与例1相同方法制备生介电带，并用来制造八层层压物。浇铸液和玻璃的组成如下：
非晶态玻璃组成 %（重量）
PbO 47.0
SiO235.6
Al2O37.6
SnO29.8
浇铸液组成 %（重量）
玻璃 31.8
Al2O321.2
丙烯酸聚合物 4.8
甲基乙基酮 3.1
1，1，1-三氯乙烷 33.8
邻苯二甲酸二辛酯 1.8
异丙醇 2.4
二氯甲烷 2.8
氟里昂TF 4.2
性能
TCE 4.9ppm/℃
Td 600℃
Ts 665℃
密度 3.4克/厘米3
焙烧件的弯曲度在总尺寸范围内小于±2密耳（0.051毫升），25℃至300℃间的TCE是5.6ppm/℃，烧结件密度是理论密度的94%。层压件有很好的尺寸稳定性，尤其是平滑性。
实施例3
用与实施例1相同的方法制备生介电带，用来制造八层层压物。玻璃的组成同实施例1，浇铸液的组成如下：
浇铸液组成 %（重量）
玻璃 33.9
麻来石 19.1
丙烯酸聚合物 4.8
甲基乙基酮 3.1
1，1，1-三氯乙烷 33.8
邻苯二甲酸二辛酯 1.8
异丙醇 2.4
二氯甲烷 2.8
氟里昂TF 4.2
焙烧件的弯曲度在总尺寸范围内仅为±1密耳（0.0254毫米），
25℃至300℃间的TCE是5.5ppm/℃，焙烧件密度是2.8克/厘米3，为理论值的96%，焙烧件在x y平面的收缩率是12.5%。数据表明用本发明组合物做成的焙烧件具有很好的尺寸稳定性，尤其有优良的低弯曲度，在1千赫下，其介电常数是6.5。
实施例4
此实施例制得的生介电带用来制造八层层压物，浇铸液组成同实施例2，玻璃配方与本发明规范不符，组成和性能如下：
非晶态玻璃组成 %（重量）
PbO 8.0
B2O35.9
SiO240.2
Al2O39.9
CaO 5.1
BaO 17.9
ZnO 8.0
MgO 5.0
性能
TCE 6.1ppm/℃
Td 635℃
Ts 715℃
密度 2.7克/厘米3
层压制品均严重弯曲成抛物线状。
Claims (8)
1、含有细碎固体的分散液的可铸的介电组合物，特征在于其中含：
a.50～75%(重量)非晶态玻璃，其变形温度(Td)为580～625℃，软化点(Ts)为630～700℃，Ts-Td是50～75℃；
b.50～25%(重量)耐火材料，它们在825～900℃温度下在玻璃中几乎是不溶的；
c.将两者分散在溶液中，溶液的一个组分是有机聚合粘合剂；
d.溶液的另一组分是非水挥发性有机溶剂。
2、权利要求1的组合物，其中耐火材料固体实质上由固体量的25～50%的下列材料组成：Al2O3、麻来石，堇青石，SiO2、CaZrO3、镁橄榄石、ZrO2及其混合物。
3、权利要求1的组合物，其中聚合粘合剂是相容的聚合物混合物，含0～100%（重量）甲基丙烯酸C1-8烷基酯、100～0%（重量）丙烯酸C1-8烷基酯和0～5%不饱和乙烯羧酸或胺。
4、权利要求3的组合物，其中甲基丙烯酸烷基酯为甲基丙烯酸乙酯，丙烯酸烷基酯为丙烯酸甲酯。
5、权利要求3的组合物，其中不饱和乙烯羧酸是单羧酸，选自丙烯酸、甲基丙烯酸及其混合物。
6、权利要求1的组合物，其中溶剂由70-83.5%（重量）的1，1，1-三氯乙烷，7-3%二氯甲烷，9-4%甲基乙基酮，6-3%异丙醇和9.3-6.5%碳氟化合物组成。
7、制造生介电带的方法，其中将按权利要求1的分散液浇注到挠性基底上铸成薄层，并加热浇铸层从其中除去挥发性有机溶剂。
8、制造多层互连的方法，包括以下步骤：
a.在用权利要求7的方法制成的多层生介电带上按电路图形阵列打通孔;
b.将厚膜导电配方料充填到通过a步骤得到的生介电带层的通孔中;
c.在用b步骤充填了通孔的每一生介电带层上，至少印刷一个电路图形厚膜功能层;
d.层压c步骤的印刷生介电带层以制得组件，内含由未焙烧生介电带隔开的多层互连的功能层;
e.将d步骤的组件进行共焙烧。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/715,971 US4654095A (en) | 1985-03-25 | 1985-03-25 | Dielectric composition |
| US715,971 | 1985-03-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN86101812A CN86101812A (zh) | 1986-10-01 |
| CN1006424B true CN1006424B (zh) | 1990-01-10 |
Family
ID=24876207
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN86101812A Expired CN1006424B (zh) | 1985-03-25 | 1986-03-20 | 介电组合物 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US4654095A (zh) |
| EP (1) | EP0196035B1 (zh) |
| JP (1) | JPH0697565B2 (zh) |
| KR (1) | KR940005417B1 (zh) |
| CN (1) | CN1006424B (zh) |
| CA (1) | CA1278182C (zh) |
| DE (1) | DE3676726D1 (zh) |
| DK (1) | DK162127C (zh) |
| GR (1) | GR860771B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740160B (zh) * | 2009-11-20 | 2011-06-08 | 湖南利德电子浆料有限公司 | 金属铝基板厚膜电路用介质浆料及其制备方法 |
Families Citing this family (68)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS628512A (ja) * | 1985-07-04 | 1987-01-16 | 株式会社村田製作所 | Ｌｃ複合部品 |
| US4766671A (en) * | 1985-10-29 | 1988-08-30 | Nec Corporation | Method of manufacturing ceramic electronic device |
| US4795512A (en) * | 1986-02-26 | 1989-01-03 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a multilayer ceramic body |
| US5068210A (en) * | 1986-04-18 | 1991-11-26 | Tektronix, Inc. | Low dielectric constant ceramic materials |
| US4808673A (en) * | 1986-10-02 | 1989-02-28 | General Electric Company | Dielectric inks for multilayer copper circuits |
| JPS63107095A (ja) * | 1986-10-23 | 1988-05-12 | 富士通株式会社 | 多層セラミツク回路基板 |
| US4935844A (en) * | 1987-01-13 | 1990-06-19 | Ian Burn | Low dielectric constant compositions |
| US4879261A (en) * | 1987-01-13 | 1989-11-07 | E. I. Du Pont De Nemours And Company | Low Dielectric constant compositions |
| JPS63181400A (ja) * | 1987-01-22 | 1988-07-26 | 松下電器産業株式会社 | セラミツク多層基板 |
| WO1989001461A1 (en) * | 1987-08-13 | 1989-02-23 | Ceramics Process Systems Corporation | Co-sinterable metal-ceramic packages and materials therefor |
| US4799984A (en) * | 1987-09-18 | 1989-01-24 | E. I. Du Pont De Nemours And Company | Method for fabricating multilayer circuits |
| US4849379A (en) * | 1988-01-28 | 1989-07-18 | E. I. Du Pont De Nemours And Company | Dielectric composition |
| US4806188A (en) * | 1988-03-04 | 1989-02-21 | E. I. Du Pont De Nemours And Company | Method for fabricating multilayer circuits |
| US5120579A (en) * | 1988-07-19 | 1992-06-09 | Ferro Corporation | Dielectric compositions |
| US5070047A (en) * | 1988-07-19 | 1991-12-03 | Ferro Corporation | Dielectric compositions |
| US4961998A (en) * | 1988-09-23 | 1990-10-09 | National Starch And Chemical Investment Holding Corporation | Dielectric composition having controlled thermal expansion |
| US5258335A (en) * | 1988-10-14 | 1993-11-02 | Ferro Corporation | Low dielectric, low temperature fired glass ceramics |
| US5164342A (en) * | 1988-10-14 | 1992-11-17 | Ferro Corporation | Low dielectric, low temperature fired glass ceramics |
| US5002903A (en) * | 1988-12-01 | 1991-03-26 | Ferro Corporation | Porcelain enameled metal substrates |
| US4953751A (en) * | 1989-03-30 | 1990-09-04 | Abc/Sebrn Techcorp. | Overflow prevention for soft drink dispensers |
| US5071794A (en) * | 1989-08-04 | 1991-12-10 | Ferro Corporation | Porous dielectric compositions |
| US5024975A (en) * | 1989-10-19 | 1991-06-18 | E. I. Du Pont De Nemours And Co., Inc. | Crystallizable, low dielectric constant, low dielectric loss composition |
| US5006182A (en) * | 1989-11-17 | 1991-04-09 | E. I. Du Pont De Nemours And Company | Method for fabricating multilayer circuits |
| US5254191A (en) * | 1990-10-04 | 1993-10-19 | E. I. Du Pont De Nemours And Company | Method for reducing shrinkage during firing of ceramic bodies |
| US5137848A (en) * | 1990-12-13 | 1992-08-11 | E. I. Du Pont De Nemours And Company | Dielectric composition containing kerf additive |
| JPH05254923A (ja) * | 1992-03-10 | 1993-10-05 | Hitachi Ltd | セラミック組成物及びセラミック回路基板 |
| US5270268A (en) * | 1992-09-23 | 1993-12-14 | Aluminum Company Of America | Aluminum borate devitrification inhibitor in low dielectric borosilicate glass |
| JP2822846B2 (ja) * | 1992-10-29 | 1998-11-11 | 関西日本電気株式会社 | ガラス−セラミック複合体を用いた水晶振動子用フラットパッケージおよびこれを用いた水晶振動子 |
| US5468694A (en) * | 1992-11-21 | 1995-11-21 | Yamamura Glass Co. Ltd. | Composition for producing low temperature co-fired substrate |
| US5780375A (en) * | 1993-10-19 | 1998-07-14 | E. I. Du Pont De Nemours And Company | Thick film composition for modifying the electrical properties of a dielectric layer |
| US5431718A (en) * | 1994-07-05 | 1995-07-11 | Motorola, Inc. | High adhesion, solderable, metallization materials |
| US5821181A (en) * | 1996-04-08 | 1998-10-13 | Motorola Inc. | Ceramic composition |
| DE19630883A1 (de) * | 1996-07-31 | 1998-02-05 | Philips Patentverwaltung | Bauteil mit einem Kondensator |
| JP3904102B2 (ja) * | 1997-08-06 | 2007-04-11 | 日本電気硝子株式会社 | プラズマディスプレーパネル用誘電体形成材料 |
| JP3860336B2 (ja) * | 1998-04-28 | 2006-12-20 | 日本特殊陶業株式会社 | ガラスセラミック複合体 |
| US6174829B1 (en) | 1999-01-07 | 2001-01-16 | Advanced Ceramic X Corp. | Ceramic dielectric compositions |
| US6159883A (en) * | 1999-01-07 | 2000-12-12 | Advanced Ceramic X Corp. | Ceramic dielectric compositions |
| US6218005B1 (en) * | 1999-04-01 | 2001-04-17 | 3M Innovative Properties Company | Tapes for heat sealing substrates |
| US6194124B1 (en) | 1999-08-12 | 2001-02-27 | E. I. Du Pont De Nemours And Company | Photosensitive ceramic compositions containing polycarbonate polymers |
| US6639508B1 (en) | 1999-09-22 | 2003-10-28 | Aptek Williams, Inc. | Electrical switch device and process for manufacturing same |
| EP1432664B1 (en) | 2001-10-01 | 2007-06-13 | Heraeus, Incorporated | Self-constrained low temperature glass-ceramic unfired tape for microelectronics and methods for making and using the same |
| US6615931B2 (en) * | 2002-01-07 | 2003-09-09 | Boart Longyear Co. | Continuous feed drilling system |
| US7381283B2 (en) * | 2002-03-07 | 2008-06-03 | Yageo Corporation | Method for reducing shrinkage during sintering low-temperature-cofired ceramics |
| US6827800B2 (en) * | 2003-01-30 | 2004-12-07 | E. I. Du Pont De Nemours And Company | Process for the constrained sintering of asymmetrically configured dielectric layers |
| US6893710B2 (en) * | 2003-04-18 | 2005-05-17 | Yageo Corporation | Multilayer ceramic composition |
| US7303698B2 (en) * | 2003-11-19 | 2007-12-04 | E.I. Du Pont De Nemours And Company | Thick film conductor case compositions for LTCC tape |
| JP2005213058A (ja) * | 2004-01-27 | 2005-08-11 | Lintec Corp | 誘電体層用組成物、グリーンシート、誘電体層形成基板およびその製造方法 |
| KR100670595B1 (ko) * | 2004-03-24 | 2007-01-17 | 삼성광주전자 주식회사 | 업라이트 청소기 |
| US20060009036A1 (en) * | 2004-07-12 | 2006-01-12 | Bacher Rudolph J | High thermal cycle conductor system |
| US20060027307A1 (en) * | 2004-08-03 | 2006-02-09 | Bidwell Larry A | Method of application of a dielectric sheet and photosensitive dielectric composition(s) and tape(s) used therein |
| US7731812B2 (en) * | 2004-10-19 | 2010-06-08 | E.I. Du Pont De Nemours And Company | Thick film conductor case compositions for LTCC tape |
| US20060110602A1 (en) * | 2004-11-22 | 2006-05-25 | Wang Carl B | Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure |
| US7068492B2 (en) * | 2004-11-22 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure |
| US7067026B2 (en) * | 2004-11-22 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure |
| US7175724B2 (en) * | 2004-11-22 | 2007-02-13 | E. I. Du Pont De Nemours And Company | Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure |
| US20060163768A1 (en) | 2005-01-26 | 2006-07-27 | Needes Christopher R | Multi-component LTCC substrate with a core of high dielectric constant ceramic material and processes for the development thereof |
| US20060162844A1 (en) * | 2005-01-26 | 2006-07-27 | Needes Christopher R | Multi-component LTCC substrate with a core of high dielectric constant ceramic material and processes for the development thereof |
| US7326367B2 (en) * | 2005-04-25 | 2008-02-05 | E.I. Du Pont De Nemours And Company | Thick film conductor paste compositions for LTCC tape in microwave applications |
| US7611645B2 (en) * | 2005-04-25 | 2009-11-03 | E. I. Du Pont De Nemours And Company | Thick film conductor compositions and the use thereof in LTCC circuits and devices |
| US20070023388A1 (en) * | 2005-07-28 | 2007-02-01 | Nair Kumaran M | Conductor composition for use in LTCC photosensitive tape on substrate applications |
| US7550319B2 (en) * | 2005-09-01 | 2009-06-23 | E. I. Du Pont De Nemours And Company | Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof |
| US20070060970A1 (en) | 2005-09-15 | 2007-03-15 | Burdon Jeremy W | Miniaturized co-fired electrical interconnects for implantable medical devices |
| US7740725B2 (en) * | 2006-04-05 | 2010-06-22 | E.I. Du Pont De Nemours And Company | Thick film conductor paste composition for LTCC tape in microwave applications |
| US20110027539A1 (en) * | 2006-06-16 | 2011-02-03 | E.I. Du Pont De Nemours And Company | Improved process for pressureless constrained sintering of low temperature co-fired ceramic with surface circuit patterns |
| US20080079779A1 (en) * | 2006-09-28 | 2008-04-03 | Robert Lee Cornell | Method for Improving Thermal Conductivity in Micro-Fluid Ejection Heads |
| JP2013516771A (ja) | 2009-12-31 | 2013-05-13 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 低温同時焼成セラミックの回路およびデバイスで使用するための混合金属システム導体 |
| US20130052433A1 (en) | 2011-08-29 | 2013-02-28 | E I Du Pont De Nemours And Company | Compositions for low k, low temperature co-fired composite (ltcc) tapes and low shrinkage, multi-layer ltcc structures formed therefrom |
| CN104253884A (zh) * | 2013-06-28 | 2014-12-31 | 深圳富泰宏精密工业有限公司 | 外壳及其制造方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3089787A (en) * | 1959-12-07 | 1963-05-14 | Westinghouse Electric Corp | Electrical insulating coating composition, method, and coated article |
| US3540894A (en) * | 1967-03-29 | 1970-11-17 | Ibm | Eutectic lead bisilicate ceramic compositions and fired ceramic bodies |
| US3832192A (en) * | 1969-09-05 | 1974-08-27 | Ibm | Ceramic dielectric porcelains |
| US3717487A (en) * | 1970-06-17 | 1973-02-20 | Sprague Electric Co | Ceramic slip composition |
| US3988405A (en) * | 1971-04-07 | 1976-10-26 | Smith Robert D | Process for forming thin walled articles or thin sheets |
| GB1341513A (zh) * | 1971-06-30 | 1973-12-25 | ||
| US3857923A (en) * | 1972-06-20 | 1974-12-31 | Ibm | Mullite package for integrated circuit devices |
| US4039338A (en) * | 1972-12-29 | 1977-08-02 | International Business Machines Corporation | Accelerated sintering for a green ceramic sheet |
| US3975201A (en) * | 1973-11-15 | 1976-08-17 | Owens-Illinois, Inc. | Vehicle and printing pastes for use in the manufacture of microelectronic packages |
| US3962162A (en) * | 1974-02-19 | 1976-06-08 | Minnesota Mining And Manufacturing Company | Rigidly bonded green ceramics and processes |
| DE2517743C3 (de) * | 1975-04-22 | 1980-03-06 | Jenaer Glaswerk Schott & Gen., 6500 Mainz | Passivierender Schutzüberzug für Siliziumhalbleiterbauelemente |
| US4104345A (en) * | 1975-06-23 | 1978-08-01 | International Business Machines Corporation | Ceramic dielectrics |
| US4183991A (en) * | 1977-05-02 | 1980-01-15 | Rohm And Haas Company | Process for preparing highly filled acrylic articles |
| JPS6054721B2 (ja) * | 1977-12-15 | 1985-12-02 | 日本電気株式会社 | 絶縁体形成用ペースト組成物 |
| US4301324A (en) * | 1978-02-06 | 1981-11-17 | International Business Machines Corporation | Glass-ceramic structures and sintered multilayer substrates thereof with circuit patterns of gold, silver or copper |
| US4272500A (en) * | 1978-05-08 | 1981-06-09 | International Business Machines Corporation | Process for forming mullite |
| US4405722A (en) * | 1979-01-23 | 1983-09-20 | Asahi Glass Company Ltd. | Sealing glass compositions |
| CA1165336A (en) * | 1980-07-31 | 1984-04-10 | Robert A. Rita | Non-crystallizing sealing glass composition |
| JPS60221358A (ja) * | 1984-04-13 | 1985-11-06 | 日本碍子株式会社 | 電気絶縁体用セラミック組成物 |
-
1985
- 1985-03-25 US US06/715,971 patent/US4654095A/en not_active Expired - Lifetime
-
1986
- 1986-03-20 CN CN86101812A patent/CN1006424B/zh not_active Expired
- 1986-03-20 CA CA000504599A patent/CA1278182C/en not_active Expired - Lifetime
- 1986-03-21 GR GR860771A patent/GR860771B/el unknown
- 1986-03-22 EP EP86103951A patent/EP0196035B1/en not_active Expired - Lifetime
- 1986-03-22 DE DE8686103951T patent/DE3676726D1/de not_active Expired - Lifetime
- 1986-03-24 JP JP61064268A patent/JPH0697565B2/ja not_active Expired - Lifetime
- 1986-03-24 KR KR1019860002161A patent/KR940005417B1/ko not_active IP Right Cessation
- 1986-03-24 DK DK135086A patent/DK162127C/da not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101740160B (zh) * | 2009-11-20 | 2011-06-08 | 湖南利德电子浆料有限公司 | 金属铝基板厚膜电路用介质浆料及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| DK162127B (da) | 1991-09-16 |
| CA1278182C (en) | 1990-12-27 |
| EP0196035B1 (en) | 1991-01-09 |
| EP0196035A3 (en) | 1988-08-17 |
| US4654095A (en) | 1987-03-31 |
| EP0196035A2 (en) | 1986-10-01 |
| GR860771B (en) | 1986-07-21 |
| KR860007344A (ko) | 1986-10-10 |
| DK135086A (da) | 1986-09-26 |
| JPS61220203A (ja) | 1986-09-30 |
| JPH0697565B2 (ja) | 1994-11-30 |
| CN86101812A (zh) | 1986-10-01 |
| DK135086D0 (da) | 1986-03-24 |
| DK162127C (da) | 1992-02-17 |
| DE3676726D1 (de) | 1991-02-14 |
| KR940005417B1 (ko) | 1994-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1006424B (zh) | 介电组合物 | |
| US4752531A (en) | Dielectric composition | |
| CN1163431C (zh) | 硼酸盐玻璃基的陶瓷带 | |
| CN1974450A (zh) | 无铅玻璃、厚膜糊料、带组合物和由其制造的低温共烧制陶瓷器件 | |
| EP0196036B1 (en) | Dielectric compositions | |
| US4867935A (en) | Method for preparing ceramic tape compositions | |
| EP1369402B2 (en) | Tape composition for constrained sintering of low temperature co-fired ceramic | |
| EP0423752A2 (en) | Dielectric compositions | |
| CN1887594A (zh) | 具有假对称构形的低温共焙烧陶瓷结构的约束烧结方法 | |
| KR100517845B1 (ko) | 고 열팽창 유리 및 테이프 조성물 | |
| CN1913044A (zh) | 用于ltcc电路和器件的厚膜导电组合物 | |
| CN1887593A (zh) | 具有假对称构形的低温共焙烧陶瓷结构的约束烧结方法 | |
| JPH0649594B2 (ja) | 結晶化可能な低誘電率低誘電体損組成物 | |
| EP0355756A1 (en) | Low dielectric constant compositions | |
| CN1887592A (zh) | 假对称构形的低温共焙烧陶瓷结构的控制烧结方法 | |
| CN1212996C (zh) | 玻璃陶瓷组合物、玻璃陶瓷烧结体以及陶瓷多层基板 | |
| CN86102992A (zh) | 微电子线路用陶瓷基片及其制作方法 | |
| CN106571172A (zh) | 一种铝合金基板厚膜电路中温烧结介质浆料及其制备方法 | |
| CN1516203A (zh) | 不对称构型电介质层的约束烧结方法 | |
| CN1296302C (zh) | 高k值玻璃和在高频下使用的带子组合物 | |
| CN1418049A (zh) | 多层陶瓷基板及其制造方法 | |
| CN1738514A (zh) | 高热循环导体系统 | |
| EP1509479B1 (en) | Ltcc tape composition | |
| CN1046704A (zh) | 控制了热膨胀的介电组合物 | |
| JP4872990B2 (ja) | グリーンシート用セラミック粉末および多層セラミック基板並びに多層セラミック基板の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C13 | Decision | ||
| GR02 | Examined patent application | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |