CN100568551C - 氮化物半导体发光器件及其制备方法 - Google Patents

氮化物半导体发光器件及其制备方法 Download PDF

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Publication number
CN100568551C
CN100568551C CNB200580041795XA CN200580041795A CN100568551C CN 100568551 C CN100568551 C CN 100568551C CN B200580041795X A CNB200580041795X A CN B200580041795XA CN 200580041795 A CN200580041795 A CN 200580041795A CN 100568551 C CN100568551 C CN 100568551C
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China
Prior art keywords
nitride semiconductor
layer
gan
semiconductor layer
algan
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Expired - Fee Related
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CNB200580041795XA
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Chinese (zh)
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CN101073159A (zh
Inventor
李昔宪
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
CNB200580041795XA 2004-12-23 2005-12-05 氮化物半导体发光器件及其制备方法 Expired - Fee Related CN100568551C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020040111086A KR100765004B1 (ko) 2004-12-23 2004-12-23 질화물 반도체 발광소자 및 그 제조방법
KR1020040111086 2004-12-23

Publications (2)

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CN101073159A CN101073159A (zh) 2007-11-14
CN100568551C true CN100568551C (zh) 2009-12-09

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Country Link
US (2) US7902561B2 (enExample)
EP (1) EP1829121B1 (enExample)
JP (2) JP2008526013A (enExample)
KR (1) KR100765004B1 (enExample)
CN (1) CN100568551C (enExample)
WO (1) WO2006068375A1 (enExample)

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KR101316492B1 (ko) 2007-04-23 2013-10-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
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KR101017396B1 (ko) * 2008-08-20 2011-02-28 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드
KR101011757B1 (ko) 2010-04-09 2011-02-07 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
KR101778159B1 (ko) * 2011-02-01 2017-09-26 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
KR101913387B1 (ko) 2012-03-23 2018-10-30 삼성전자주식회사 Ⅲ족 질화물 이종 접합 구조 소자의 선택적 저온 오믹 콘택 형성 방법
CN108615725A (zh) * 2012-07-11 2018-10-02 亮锐控股有限公司 降低或者消除ⅲ-氮化物结构中的纳米管缺陷
CN102738325B (zh) * 2012-07-17 2014-12-17 大连理工常州研究院有限公司 金属基片垂直GaN基LED芯片及其制备方法
DE102012217631B4 (de) 2012-09-27 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement mit einer Schichtstruktur
CN103187497B (zh) * 2013-01-28 2015-11-25 上海博恩世通光电股份有限公司 一种提高大尺寸芯片光效的外延结构及其生长方法
FR3003397B1 (fr) 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
JP2016517627A (ja) * 2013-03-15 2016-06-16 ソイテックＳｏｉｔｅｃ ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
FR3004585B1 (fr) * 2013-04-12 2017-12-29 Soitec Silicon On Insulator Structures semi-conductrices dotees de regions actives comprenant de l'ingan
CN103236477B (zh) * 2013-04-19 2015-08-12 安徽三安光电有限公司 一种led外延结构及其制备方法
EP2988339B1 (en) * 2014-08-20 2019-03-27 LG Innotek Co., Ltd. Light emitting device
JP6380172B2 (ja) * 2015-03-06 2018-08-29 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
CN105514234A (zh) * 2015-12-14 2016-04-20 安徽三安光电有限公司 一种氮化物发光二极管及其生长方法
CN105957935A (zh) * 2016-05-28 2016-09-21 湘能华磊光电股份有限公司 一种led外延层及其生长方法
CN107579432B (zh) * 2017-08-25 2019-11-05 华南师范大学 InGaN/AlInN量子阱激光器及其制作方法
EP3707756B1 (en) * 2017-11-07 2022-08-24 Gallium Enterprises Pty Ltd Buried activated p-(al,in)gan layers
CN115377262B (zh) * 2021-07-22 2025-08-29 厦门三安光电有限公司 一种外延结构和发光二极管
CN115377258B (zh) * 2022-08-26 2025-10-28 江西兆驰半导体有限公司 Led外延结构及其制备方法

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EP1221723A2 (en) * 2001-01-05 2002-07-10 LumiLeds Lighting U.S., LLC Formation of ohmic contats in III-Nitride light emitting devices
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WO1998031055A1 (en) * 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
EP1221723A2 (en) * 2001-01-05 2002-07-10 LumiLeds Lighting U.S., LLC Formation of ohmic contats in III-Nitride light emitting devices
WO2004017431A1 (en) * 2002-08-19 2004-02-26 Lg Innotek Co., Ltd Nitride semiconductor led and fabrication method thereof

Also Published As

Publication number Publication date
EP1829121B1 (en) 2018-11-07
US7902561B2 (en) 2011-03-08
JP2013065897A (ja) 2013-04-11
JP2008526013A (ja) 2008-07-17
WO2006068375A1 (en) 2006-06-29
EP1829121A1 (en) 2007-09-05
EP1829121A4 (en) 2010-12-01
US20110121261A1 (en) 2011-05-26
KR100765004B1 (ko) 2007-10-09
KR20060072445A (ko) 2006-06-28
CN101073159A (zh) 2007-11-14
US20080128678A1 (en) 2008-06-05
US8704250B2 (en) 2014-04-22

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