KR100765004B1 - 질화물 반도체 발광소자 및 그 제조방법 - Google Patents

질화물 반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
KR100765004B1
KR100765004B1 KR1020040111086A KR20040111086A KR100765004B1 KR 100765004 B1 KR100765004 B1 KR 100765004B1 KR 1020040111086 A KR1020040111086 A KR 1020040111086A KR 20040111086 A KR20040111086 A KR 20040111086A KR 100765004 B1 KR100765004 B1 KR 100765004B1
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KR
South Korea
Prior art keywords
layer
nitride semiconductor
gan
light emitting
semiconductor layer
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Expired - Fee Related
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KR1020040111086A
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English (en)
Korean (ko)
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KR20060072445A (ko
Inventor
이석헌
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엘지이노텍 주식회사
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Priority to KR1020040111086A priority Critical patent/KR100765004B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to US11/722,658 priority patent/US7902561B2/en
Priority to CNB200580041795XA priority patent/CN100568551C/zh
Priority to PCT/KR2005/004119 priority patent/WO2006068375A1/en
Priority to JP2007548056A priority patent/JP2008526013A/ja
Priority to EP05821286.1A priority patent/EP1829121B1/en
Publication of KR20060072445A publication Critical patent/KR20060072445A/ko
Application granted granted Critical
Publication of KR100765004B1 publication Critical patent/KR100765004B1/ko
Priority to US12/981,023 priority patent/US8704250B2/en
Priority to JP2012286886A priority patent/JP2013065897A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020040111086A 2004-12-23 2004-12-23 질화물 반도체 발광소자 및 그 제조방법 Expired - Fee Related KR100765004B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020040111086A KR100765004B1 (ko) 2004-12-23 2004-12-23 질화물 반도체 발광소자 및 그 제조방법
CNB200580041795XA CN100568551C (zh) 2004-12-23 2005-12-05 氮化物半导体发光器件及其制备方法
PCT/KR2005/004119 WO2006068375A1 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof
JP2007548056A JP2008526013A (ja) 2004-12-23 2005-12-05 窒化物半導体発光素子及びその製造方法
US11/722,658 US7902561B2 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device
EP05821286.1A EP1829121B1 (en) 2004-12-23 2005-12-05 Nitride semiconductor light emitting device and fabrication method thereof
US12/981,023 US8704250B2 (en) 2004-12-23 2010-12-29 Nitride semiconductor light emitting device and fabrication method thereof
JP2012286886A JP2013065897A (ja) 2004-12-23 2012-12-28 窒化物半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040111086A KR100765004B1 (ko) 2004-12-23 2004-12-23 질화물 반도체 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20060072445A KR20060072445A (ko) 2006-06-28
KR100765004B1 true KR100765004B1 (ko) 2007-10-09

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Country Status (6)

Country Link
US (2) US7902561B2 (enExample)
EP (1) EP1829121B1 (enExample)
JP (2) JP2008526013A (enExample)
KR (1) KR100765004B1 (enExample)
CN (1) CN100568551C (enExample)
WO (1) WO2006068375A1 (enExample)

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US9524869B2 (en) 2004-03-11 2016-12-20 Epistar Corporation Nitride-based semiconductor light-emitting device
KR100765004B1 (ko) 2004-12-23 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100821220B1 (ko) * 2006-06-29 2008-04-10 서울옵토디바이스주식회사 다층의 버퍼층을 가지는 질화물 반도체 발광 소자 및 그제조방법
KR101316492B1 (ko) 2007-04-23 2013-10-10 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조 방법
KR100910365B1 (ko) * 2007-06-11 2009-08-04 고려대학교 산학협력단 수직형 질화물계 발광소자 및 그 제조방법
KR101017396B1 (ko) * 2008-08-20 2011-02-28 서울옵토디바이스주식회사 변조도핑층을 갖는 발광 다이오드
KR101011757B1 (ko) 2010-04-09 2011-02-07 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
KR101778159B1 (ko) * 2011-02-01 2017-09-26 엘지이노텍 주식회사 발광소자 및 발광소자 패키지
KR101913387B1 (ko) 2012-03-23 2018-10-30 삼성전자주식회사 Ⅲ족 질화물 이종 접합 구조 소자의 선택적 저온 오믹 콘택 형성 방법
CN108615725A (zh) * 2012-07-11 2018-10-02 亮锐控股有限公司 降低或者消除ⅲ-氮化物结构中的纳米管缺陷
CN102738325B (zh) * 2012-07-17 2014-12-17 大连理工常州研究院有限公司 金属基片垂直GaN基LED芯片及其制备方法
DE102012217631B4 (de) 2012-09-27 2022-05-25 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement mit einer Schichtstruktur
CN103187497B (zh) * 2013-01-28 2015-11-25 上海博恩世通光电股份有限公司 一种提高大尺寸芯片光效的外延结构及其生长方法
FR3003397B1 (fr) 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
JP2016517627A (ja) * 2013-03-15 2016-06-16 ソイテックＳｏｉｔｅｃ ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
FR3004585B1 (fr) * 2013-04-12 2017-12-29 Soitec Silicon On Insulator Structures semi-conductrices dotees de regions actives comprenant de l'ingan
CN103236477B (zh) * 2013-04-19 2015-08-12 安徽三安光电有限公司 一种led外延结构及其制备方法
EP2988339B1 (en) * 2014-08-20 2019-03-27 LG Innotek Co., Ltd. Light emitting device
JP6380172B2 (ja) * 2015-03-06 2018-08-29 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
CN105514234A (zh) * 2015-12-14 2016-04-20 安徽三安光电有限公司 一种氮化物发光二极管及其生长方法
CN105957935A (zh) * 2016-05-28 2016-09-21 湘能华磊光电股份有限公司 一种led外延层及其生长方法
CN107579432B (zh) * 2017-08-25 2019-11-05 华南师范大学 InGaN/AlInN量子阱激光器及其制作方法
EP3707756B1 (en) * 2017-11-07 2022-08-24 Gallium Enterprises Pty Ltd Buried activated p-(al,in)gan layers
CN115377262B (zh) * 2021-07-22 2025-08-29 厦门三安光电有限公司 一种外延结构和发光二极管
CN115377258B (zh) * 2022-08-26 2025-10-28 江西兆驰半导体有限公司 Led外延结构及其制备方法

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JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
WO2004017431A1 (en) * 2002-08-19 2004-02-26 Lg Innotek Co., Ltd Nitride semiconductor led and fabrication method thereof

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JPH09232629A (ja) * 1996-02-26 1997-09-05 Toshiba Corp 半導体素子
WO2004017431A1 (en) * 2002-08-19 2004-02-26 Lg Innotek Co., Ltd Nitride semiconductor led and fabrication method thereof

Also Published As

Publication number Publication date
EP1829121B1 (en) 2018-11-07
US7902561B2 (en) 2011-03-08
CN100568551C (zh) 2009-12-09
JP2013065897A (ja) 2013-04-11
JP2008526013A (ja) 2008-07-17
WO2006068375A1 (en) 2006-06-29
EP1829121A1 (en) 2007-09-05
EP1829121A4 (en) 2010-12-01
US20110121261A1 (en) 2011-05-26
KR20060072445A (ko) 2006-06-28
CN101073159A (zh) 2007-11-14
US20080128678A1 (en) 2008-06-05
US8704250B2 (en) 2014-04-22

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