CN100552959C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100552959C CN100552959C CNB2006100092085A CN200610009208A CN100552959C CN 100552959 C CN100552959 C CN 100552959C CN B2006100092085 A CNB2006100092085 A CN B2006100092085A CN 200610009208 A CN200610009208 A CN 200610009208A CN 100552959 C CN100552959 C CN 100552959C
- Authority
- CN
- China
- Prior art keywords
- film
- conducting film
- capacitor
- semiconductor device
- dielectric film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005307176A JP2007115972A (ja) | 2005-10-21 | 2005-10-21 | 半導体装置とその製造方法 |
JP2005307176 | 2005-10-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1953184A CN1953184A (zh) | 2007-04-25 |
CN100552959C true CN100552959C (zh) | 2009-10-21 |
Family
ID=37984541
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100092085A Expired - Fee Related CN100552959C (zh) | 2005-10-21 | 2006-02-15 | 半导体器件及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US20070090438A1 (zh) |
JP (1) | JP2007115972A (zh) |
KR (2) | KR100774898B1 (zh) |
CN (1) | CN100552959C (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5010121B2 (ja) * | 2005-08-17 | 2012-08-29 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP2007115972A (ja) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
JP4721003B2 (ja) * | 2006-01-25 | 2011-07-13 | セイコーエプソン株式会社 | 半導体装置 |
JP4702550B2 (ja) * | 2006-01-27 | 2011-06-15 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP4600322B2 (ja) * | 2006-03-14 | 2010-12-15 | セイコーエプソン株式会社 | 強誘電体メモリ装置の製造方法 |
JP5083207B2 (ja) * | 2006-03-30 | 2012-11-28 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP4164700B2 (ja) * | 2006-05-24 | 2008-10-15 | セイコーエプソン株式会社 | 強誘電体メモリおよびその製造方法 |
KR100755373B1 (ko) * | 2006-09-15 | 2007-09-04 | 삼성전자주식회사 | 도전성 산화막을 갖는 콘택 구조체, 이를 채택하는강유전체 메모리 소자 및 그 제조방법들 |
JP5242044B2 (ja) * | 2006-11-29 | 2013-07-24 | セイコーエプソン株式会社 | 強誘電体メモリ装置とその製造方法 |
US7772014B2 (en) * | 2007-08-28 | 2010-08-10 | Texas Instruments Incorporated | Semiconductor device having reduced single bit fails and a method of manufacture thereof |
CN102947935B (zh) * | 2010-06-21 | 2015-08-12 | 松下电器产业株式会社 | 电阻变化元件的制造方法 |
US8815706B2 (en) * | 2012-01-20 | 2014-08-26 | Infineon Technologies Ag | Methods of forming semiconductor devices |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0722578A (ja) | 1993-07-05 | 1995-01-24 | Hitachi Ltd | 積層集積半導体装置及びその製造方法 |
JP3679814B2 (ja) * | 1993-09-03 | 2005-08-03 | セイコーエプソン株式会社 | 記憶装置 |
JP3380372B2 (ja) * | 1995-06-30 | 2003-02-24 | 三菱電機株式会社 | 半導体記憶装置の製造方法 |
JPH10340871A (ja) | 1997-06-06 | 1998-12-22 | Toshiba Corp | 研磨方法及び半導体装置の製造方法 |
JP3319994B2 (ja) * | 1997-09-29 | 2002-09-03 | シャープ株式会社 | 半導体記憶素子 |
US6462931B1 (en) * | 1997-10-23 | 2002-10-08 | Texas Instruments Incorporated | High-dielectric constant capacitor and memory |
JP3684059B2 (ja) * | 1998-01-07 | 2005-08-17 | 株式会社東芝 | 半導体装置 |
JPH11330411A (ja) | 1998-05-13 | 1999-11-30 | Matsushita Electric Ind Co Ltd | 半導体記憶装置及びその製造方法 |
ATE533178T1 (de) * | 1998-09-09 | 2011-11-15 | Texas Instruments Inc | Integrierter schaltkreis mit kondensator und diesbezügliches herstellungsverfahren |
US6485988B2 (en) * | 1999-12-22 | 2002-11-26 | Texas Instruments Incorporated | Hydrogen-free contact etch for ferroelectric capacitor formation |
US6455370B1 (en) * | 2000-08-16 | 2002-09-24 | Micron Technology, Inc. | Method of patterning noble metals for semiconductor devices by electropolishing |
KR20020058573A (ko) * | 2000-12-30 | 2002-07-12 | 박종섭 | 반도체소자 및 그 제조 방법 |
KR100418581B1 (ko) * | 2001-06-12 | 2004-02-11 | 주식회사 하이닉스반도체 | 메모리 소자의 제조방법 |
KR100561839B1 (ko) * | 2001-11-10 | 2006-03-16 | 삼성전자주식회사 | 강유전체 커패시터 및 그 제조방법 |
JP2003224205A (ja) * | 2002-01-29 | 2003-08-08 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
JP2004146772A (ja) | 2002-03-18 | 2004-05-20 | Fujitsu Ltd | 半導体装置及びその製造方法 |
KR100473113B1 (ko) * | 2002-04-04 | 2005-03-08 | 삼성전자주식회사 | 반도체 장치의 커패시터 제조 방법 |
KR100536590B1 (ko) * | 2002-09-11 | 2005-12-14 | 삼성전자주식회사 | 강유전체 커패시터 및 그 제조 방법 |
US6847073B2 (en) * | 2002-11-07 | 2005-01-25 | Kabushiki Kaisha Toshiba | Semiconductor device using ferroelectric film in cell capacitor, and method for fabricating the same |
JP4703937B2 (ja) * | 2002-11-18 | 2011-06-15 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7045071B2 (en) * | 2002-12-30 | 2006-05-16 | Hynix Semiconductor Inc. | Method for fabricating ferroelectric random access memory device |
JP2004356464A (ja) * | 2003-05-30 | 2004-12-16 | Oki Electric Ind Co Ltd | 強誘電体素子の製造方法、強誘電体素子及びFeRAM |
US20050087788A1 (en) * | 2003-10-22 | 2005-04-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
JP2007115972A (ja) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
-
2005
- 2005-10-21 JP JP2005307176A patent/JP2007115972A/ja active Pending
-
2006
- 2006-01-25 US US11/338,799 patent/US20070090438A1/en not_active Abandoned
- 2006-02-06 KR KR1020060011084A patent/KR100774898B1/ko active IP Right Grant
- 2006-02-15 CN CNB2006100092085A patent/CN100552959C/zh not_active Expired - Fee Related
-
2007
- 2007-09-03 KR KR1020070088850A patent/KR100878868B1/ko active IP Right Grant
-
2009
- 2009-09-03 US US12/553,388 patent/US8124476B2/en not_active Expired - Fee Related
-
2012
- 2012-01-19 US US13/353,844 patent/US8361861B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20120115252A1 (en) | 2012-05-10 |
KR100878868B1 (ko) | 2009-01-15 |
KR20070043563A (ko) | 2007-04-25 |
KR20070094717A (ko) | 2007-09-21 |
CN1953184A (zh) | 2007-04-25 |
KR100774898B1 (ko) | 2007-11-09 |
US8361861B2 (en) | 2013-01-29 |
US8124476B2 (en) | 2012-02-28 |
JP2007115972A (ja) | 2007-05-10 |
US20070090438A1 (en) | 2007-04-26 |
US20100022031A1 (en) | 2010-01-28 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa Applicant before: Fujitsu Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
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CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20091021 Termination date: 20200215 |
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CF01 | Termination of patent right due to non-payment of annual fee |