CN100539145C - 电阻电路 - Google Patents

电阻电路 Download PDF

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Publication number
CN100539145C
CN100539145C CNB2005100885612A CN200510088561A CN100539145C CN 100539145 C CN100539145 C CN 100539145C CN B2005100885612 A CNB2005100885612 A CN B2005100885612A CN 200510088561 A CN200510088561 A CN 200510088561A CN 100539145 C CN100539145 C CN 100539145C
Authority
CN
China
Prior art keywords
resistor
metal line
resistance circuit
district
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100885612A
Other languages
English (en)
Chinese (zh)
Other versions
CN1734768A (zh
Inventor
原田博文
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN1734768A publication Critical patent/CN1734768A/zh
Application granted granted Critical
Publication of CN100539145C publication Critical patent/CN100539145C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

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  • Semiconductor Integrated Circuits (AREA)
CNB2005100885612A 2004-08-04 2005-08-04 电阻电路 Expired - Fee Related CN100539145C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004228587A JP4723827B2 (ja) 2004-08-04 2004-08-04 抵抗回路
JP228587/04 2004-08-04

Publications (2)

Publication Number Publication Date
CN1734768A CN1734768A (zh) 2006-02-15
CN100539145C true CN100539145C (zh) 2009-09-09

Family

ID=35756603

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100885612A Expired - Fee Related CN100539145C (zh) 2004-08-04 2005-08-04 电阻电路

Country Status (3)

Country Link
US (1) US7485933B2 (https=)
JP (1) JP4723827B2 (https=)
CN (1) CN100539145C (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6956277B1 (en) * 2004-03-23 2005-10-18 Taiwan Semiconductor Manufacturing Company, Ltd. Diode junction poly fuse
US7616089B2 (en) * 2007-09-28 2009-11-10 Cirrus Logic, Inc. Compensation of field effect on polycrystalline resistors
JP2010182954A (ja) * 2009-02-06 2010-08-19 Seiko Instruments Inc 半導体装置
US9825141B2 (en) 2015-05-26 2017-11-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Three dimensional monolithic LDMOS transistor
JP6764692B2 (ja) * 2016-05-24 2020-10-07 Koa株式会社 シャント抵抗器およびシャント抵抗器の実装構造
JP7361567B2 (ja) * 2019-10-25 2023-10-16 ローム株式会社 電子部品
KR102747221B1 (ko) * 2020-11-30 2024-12-31 삼성전기주식회사 칩 저항기
JP7732354B2 (ja) * 2021-12-28 2025-09-02 富士電機株式会社 半導体装置
CN117810223B (zh) * 2024-02-29 2024-05-10 成都本原聚能科技有限公司 一种多晶硅电阻电路、制备方法及音频差分电路

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2864576B2 (ja) * 1988-11-22 1999-03-03 セイコーエプソン株式会社 半導体装置
JP2664793B2 (ja) * 1990-04-06 1997-10-22 株式会社東芝 半導体装置の製造方法
JPH0669427A (ja) * 1992-08-17 1994-03-11 Nec Corp 半導体集積装置
JPH06188371A (ja) * 1992-12-21 1994-07-08 Hitachi Ltd 半導体集積回路装置
JP3526701B2 (ja) * 1995-08-24 2004-05-17 セイコーインスツルメンツ株式会社 半導体装置
JPH09289290A (ja) * 1996-04-19 1997-11-04 S I I R D Center:Kk 半導体装置

Also Published As

Publication number Publication date
CN1734768A (zh) 2006-02-15
US7485933B2 (en) 2009-02-03
JP2006049581A (ja) 2006-02-16
JP4723827B2 (ja) 2011-07-13
US20060027894A1 (en) 2006-02-09

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160317

Address after: Chiba County, Japan

Patentee after: SEIKO INSTR INC

Address before: Chiba County, Japan

Patentee before: Seiko Instruments Inc.

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: EPPs Lingke Co. Ltd.

Address before: Chiba County, Japan

Patentee before: SEIKO INSTR INC

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090909

Termination date: 20200804