CN100530679C - 半导体元件 - Google Patents
半导体元件 Download PDFInfo
- Publication number
- CN100530679C CN100530679C CNB2005100888019A CN200510088801A CN100530679C CN 100530679 C CN100530679 C CN 100530679C CN B2005100888019 A CNB2005100888019 A CN B2005100888019A CN 200510088801 A CN200510088801 A CN 200510088801A CN 100530679 C CN100530679 C CN 100530679C
- Authority
- CN
- China
- Prior art keywords
- vertical
- conductive area
- conductive
- arranged side
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 239000012535 impurity Substances 0.000 claims abstract description 135
- 239000000758 substrate Substances 0.000 claims description 99
- 230000015572 biosynthetic process Effects 0.000 claims description 58
- 239000002800 charge carrier Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 abstract description 22
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 40
- 230000015556 catabolic process Effects 0.000 description 36
- 230000009467 reduction Effects 0.000 description 14
- 230000005684 electric field Effects 0.000 description 13
- 230000001976 improved effect Effects 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- CVRPVRHBAOPDIG-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;2-(2-methylprop-2-enoyloxy)ethyl 1,3-dioxo-2-benzofuran-5-carboxylate Chemical compound COC(=O)C(C)=C.CC(=C)C(=O)OCCOC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 CVRPVRHBAOPDIG-UHFFFAOYSA-N 0.000 description 4
- 230000000116 mitigating effect Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000002040 relaxant effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- JTJMJGYZQZDUJJ-UHFFFAOYSA-N phencyclidine Chemical compound C1CCCCN1C1(C=2C=CC=CC=2)CCCCC1 JTJMJGYZQZDUJJ-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004228599 | 2004-08-04 | ||
JP2004228599 | 2004-08-04 | ||
JP2005006869 | 2005-01-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1734782A CN1734782A (zh) | 2006-02-15 |
CN100530679C true CN100530679C (zh) | 2009-08-19 |
Family
ID=36077068
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100888019A Active CN100530679C (zh) | 2004-08-04 | 2005-07-29 | 半导体元件 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5652409B2 (zh) |
CN (1) | CN100530679C (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5741567B2 (ja) | 2009-07-31 | 2015-07-01 | 富士電機株式会社 | 半導体装置 |
DE102015106693A1 (de) * | 2015-04-29 | 2016-11-03 | Infineon Technologies Austria Ag | Superjunction-Halbleitervorrichtung mit Übergangsabschlusserstreckungsstruktur und Verfahren zur Herstellung |
CN103178101B (zh) * | 2011-12-21 | 2015-12-02 | 上海华虹宏力半导体制造有限公司 | 绝缘栅双极晶体管及制造方法 |
EP2835828B1 (en) * | 2012-11-08 | 2020-01-08 | Fuji Electric Co., Ltd. | Semiconductor device and semiconductor device fabrication method |
JP6197294B2 (ja) * | 2013-01-16 | 2017-09-20 | 富士電機株式会社 | 半導体素子 |
CN103531615A (zh) * | 2013-10-15 | 2014-01-22 | 苏州晶湛半导体有限公司 | 氮化物功率晶体管及其制造方法 |
JP6568735B2 (ja) * | 2015-07-17 | 2019-08-28 | 日立オートモティブシステムズ株式会社 | スイッチ素子及び負荷駆動装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4309764C2 (de) * | 1993-03-25 | 1997-01-30 | Siemens Ag | Leistungs-MOSFET |
JPH09266311A (ja) * | 1996-01-22 | 1997-10-07 | Fuji Electric Co Ltd | 半導体装置及びその製造方法 |
JP4126915B2 (ja) * | 2002-01-30 | 2008-07-30 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
JP3908572B2 (ja) * | 2002-03-18 | 2007-04-25 | 株式会社東芝 | 半導体素子 |
JP4253558B2 (ja) * | 2003-10-10 | 2009-04-15 | 株式会社豊田中央研究所 | 半導体装置 |
-
2005
- 2005-07-29 CN CNB2005100888019A patent/CN100530679C/zh active Active
-
2012
- 2012-01-23 JP JP2012011583A patent/JP5652409B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP5652409B2 (ja) | 2015-01-14 |
JP2012109599A (ja) | 2012-06-07 |
CN1734782A (zh) | 2006-02-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10290732B2 (en) | High voltage semiconductor devices and methods of making the devices | |
JP4967236B2 (ja) | 半導体素子 | |
JP5741567B2 (ja) | 半導体装置 | |
KR101440397B1 (ko) | 반도체장치 | |
CN100530679C (zh) | 半导体元件 | |
EP2342753B1 (en) | Insulated gate bipolar transistor | |
CN108389901A (zh) | 一种载流子存储增强型超结igbt | |
CN108198851A (zh) | 一种具有增强载流子存储效应的超结igbt | |
US20110233684A1 (en) | Semiconductor device | |
CN102420242B (zh) | 半导体装置 | |
CN100536162C (zh) | 绝缘栅型双极晶体管 | |
JP4764974B2 (ja) | 半導体装置 | |
CN105047712A (zh) | 纵向型半导体装置及其制造方法 | |
CN101794816A (zh) | 半导体器件 | |
US20150187877A1 (en) | Power semiconductor device | |
JP2012089824A (ja) | 半導体素子およびその製造方法 | |
JPH08213613A (ja) | たて型半導体素子およびその製造方法 | |
US11374125B2 (en) | Vertical transistor device having a discharge region comprising at least one lower dose section and located at least partially below a gate electrode pad | |
KR101994728B1 (ko) | 전력 반도체 소자 | |
TW202119616A (zh) | 半導體裝置 | |
CN108183102B (zh) | 一种逆阻型功率mosfet器件 | |
KR20150061973A (ko) | 전력 반도체 소자 | |
JP2020155475A (ja) | 半導体装置およびその制御方法 | |
CN103794646A (zh) | 半导体器件 | |
CN108288649A (zh) | 一种有两种载流子导电的超结功率mosfet |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: FUJI MOTOR SYSTEM CO., LTD. Free format text: FORMER OWNER: FUJI MOTOR ELECTRONICS TECHNOLOGY CO., LTD. Effective date: 20100511 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20100511 Address after: Tokyo, Japan Patentee after: Fuji Electric Systems Co., Ltd. Address before: Tokyo, Japan Patentee before: Fuji Electronic Device Technol |
|
C56 | Change in the name or address of the patentee |
Owner name: FUJI ELECTRIC CO., LTD. Free format text: FORMER NAME: FUJI ELECTRIC SYSTEMS CO., LTD. |
|
CP03 | Change of name, title or address |
Address after: Japan's Kawasaki City Patentee after: Fuji Electric Co., Ltd. Address before: Tokyo, Japan Patentee before: Fuji Electric Systems Co., Ltd. |