CN100520970C - 非易失性存储装置以及非易失性存储装置的数据写入方法 - Google Patents

非易失性存储装置以及非易失性存储装置的数据写入方法 Download PDF

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Publication number
CN100520970C
CN100520970C CNB2005100888803A CN200510088880A CN100520970C CN 100520970 C CN100520970 C CN 100520970C CN B2005100888803 A CNB2005100888803 A CN B2005100888803A CN 200510088880 A CN200510088880 A CN 200510088880A CN 100520970 C CN100520970 C CN 100520970C
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CN
China
Prior art keywords
control gate
memory cell
line
cell block
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2005100888803A
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English (en)
Chinese (zh)
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CN1747068A (zh
Inventor
小平觉
小林等
前村公博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
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Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1747068A publication Critical patent/CN1747068A/zh
Application granted granted Critical
Publication of CN100520970C publication Critical patent/CN100520970C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
CNB2005100888803A 2004-07-30 2005-07-29 非易失性存储装置以及非易失性存储装置的数据写入方法 Expired - Fee Related CN100520970C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004224130 2004-07-30
JP2004224130A JP2006048749A (ja) 2004-07-30 2004-07-30 不揮発性記憶装置及び不揮発性記憶装置のデータ書き込み方法

Publications (2)

Publication Number Publication Date
CN1747068A CN1747068A (zh) 2006-03-15
CN100520970C true CN100520970C (zh) 2009-07-29

Family

ID=35731975

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005100888803A Expired - Fee Related CN100520970C (zh) 2004-07-30 2005-07-29 非易失性存储装置以及非易失性存储装置的数据写入方法

Country Status (4)

Country Link
US (1) US7292475B2 (enExample)
JP (1) JP2006048749A (enExample)
KR (1) KR100727203B1 (enExample)
CN (1) CN100520970C (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4548603B2 (ja) 2005-06-08 2010-09-22 セイコーエプソン株式会社 半導体装置
JP4591691B2 (ja) * 2005-06-07 2010-12-01 セイコーエプソン株式会社 半導体装置
US7633828B2 (en) * 2006-07-31 2009-12-15 Sandisk 3D Llc Hierarchical bit line bias bus for block selectable memory array
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US8085588B2 (en) * 2009-04-30 2011-12-27 Spansion Llc Semiconductor device and control method thereof
KR101253443B1 (ko) * 2011-06-09 2013-04-11 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그 동작 방법
KR20130120858A (ko) 2012-04-26 2013-11-05 한국전자통신연구원 전달게이트가 삽입된 이이피롬 셀
KR101982141B1 (ko) 2013-01-04 2019-05-27 한국전자통신연구원 이이피롬 셀 및 이이피롬 장치
CN111508546B (zh) * 2019-01-31 2023-06-27 群联电子股份有限公司 解码方法、存储器控制电路单元与存储器存储装置
US10706936B1 (en) 2019-04-26 2020-07-07 Western Digital Technologies, Inc. System and method for avoiding back to back program failure

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3267974D1 (en) * 1982-03-17 1986-01-30 Itt Ind Gmbh Deutsche Electrically erasable memory matrix (eeprom)
DE3277715D1 (en) * 1982-08-06 1987-12-23 Itt Ind Gmbh Deutsche Electrically programmable memory array
FR2622038B1 (fr) * 1987-10-19 1990-01-19 Thomson Semiconducteurs Procede de programmation des cellules memoire d'une memoire et circuit pour la mise en oeuvre de ce procede
FR2623651B1 (fr) * 1987-11-20 1992-11-27 Sgs Thomson Microelectronics Plan memoire et procede et prototype de definition d'un circuit integre electronique comportant un tel plan memoire
JP2685966B2 (ja) * 1990-06-22 1997-12-08 株式会社東芝 不揮発性半導体記憶装置
US5471422A (en) 1994-04-11 1995-11-28 Motorola, Inc. EEPROM cell with isolation transistor and methods for making and operating the same
JPH08222649A (ja) 1995-02-17 1996-08-30 Sony Corp 半導体不揮発性記憶装置
US5914514A (en) 1996-09-27 1999-06-22 Xilinx, Inc. Two transistor flash EPROM cell
KR100252476B1 (ko) 1997-05-19 2000-04-15 윤종용 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법
US6643174B2 (en) * 2001-12-20 2003-11-04 Winbond Electronics Corporation EEPROM cells and array with reduced write disturbance

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A 16H E2PROM Employing new array architecture anddesigned-in reliability feature. Yaron.IEEE Journal of Solid-State Circuit,Vol.17 No.5. 1982 *
Hi-MNOS II technoogy for a 64-kbit byte-eraseable 5-V-onlyEEPROM. Yatsuda.IEEE Transactions of Electron Device,Vol.32 No.2. 1985 *

Also Published As

Publication number Publication date
KR100727203B1 (ko) 2007-06-13
CN1747068A (zh) 2006-03-15
KR20060048864A (ko) 2006-05-18
US20060023509A1 (en) 2006-02-02
JP2006048749A (ja) 2006-02-16
US7292475B2 (en) 2007-11-06

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Granted publication date: 20090729

Termination date: 20160729