CN100479633C - 层图案制造方法、配线制造方法、电子设备的制造方法 - Google Patents

层图案制造方法、配线制造方法、电子设备的制造方法 Download PDF

Info

Publication number
CN100479633C
CN100479633C CNB2004100638610A CN200410063861A CN100479633C CN 100479633 C CN100479633 C CN 100479633C CN B2004100638610 A CNB2004100638610 A CN B2004100638610A CN 200410063861 A CN200410063861 A CN 200410063861A CN 100479633 C CN100479633 C CN 100479633C
Authority
CN
China
Prior art keywords
layer
liquid
material layer
substrate
ejected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004100638610A
Other languages
English (en)
Chinese (zh)
Other versions
CN1578598A (zh
Inventor
酒井宽文
樱田和昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of CN1578598A publication Critical patent/CN1578598A/zh
Application granted granted Critical
Publication of CN100479633C publication Critical patent/CN100479633C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Coating Apparatus (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Ink Jet (AREA)
  • Liquid Crystal (AREA)
CNB2004100638610A 2003-07-15 2004-07-13 层图案制造方法、配线制造方法、电子设备的制造方法 Expired - Fee Related CN100479633C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003274705 2003-07-15
JP2003274705 2003-07-15
JP2003327997A JP4192737B2 (ja) 2003-07-15 2003-09-19 層パターン製造方法、配線製造方法、電子機器の製造方法
JP2003327997 2003-09-19

Publications (2)

Publication Number Publication Date
CN1578598A CN1578598A (zh) 2005-02-09
CN100479633C true CN100479633C (zh) 2009-04-15

Family

ID=34197131

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100638610A Expired - Fee Related CN100479633C (zh) 2003-07-15 2004-07-13 层图案制造方法、配线制造方法、电子设备的制造方法

Country Status (5)

Country Link
US (1) US7387903B2 (https=)
JP (1) JP4192737B2 (https=)
KR (1) KR100613158B1 (https=)
CN (1) CN100479633C (https=)
TW (1) TW200510943A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179213A (ja) 2004-12-21 2006-07-06 Seiko Epson Corp パターン形成基板、電気光学装置及び電気光学装置の製造方法
JP2007027588A (ja) * 2005-07-20 2007-02-01 Seiko Epson Corp 膜パターンの形成方法、デバイス、電気光学装置、及び電子機器
JP4677937B2 (ja) * 2005-07-20 2011-04-27 セイコーエプソン株式会社 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法
JP2007053333A (ja) * 2005-07-20 2007-03-01 Seiko Epson Corp 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法
JP4670596B2 (ja) * 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
JP2007178885A (ja) * 2005-12-28 2007-07-12 Az Electronic Materials Kk パターンおよび配線パターンならびにそれらの製造法
WO2007103254A2 (en) * 2006-03-02 2007-09-13 Axcess International Inc. System and method for determining location, directionality, and velocity of rfid tags
JP2007286469A (ja) 2006-04-19 2007-11-01 Seiko Epson Corp 膜パターンの形成方法、アクティブマトリクス基板の製造方法、デバイス、電気光学装置、及び電子機器
JP2008016413A (ja) * 2006-07-10 2008-01-24 Canon Inc 配線基板の製造方法、電子源の製造方法、画像表示装置の製造方法、画像再生装置
JP4222390B2 (ja) * 2006-07-25 2009-02-12 セイコーエプソン株式会社 パターンの形成方法、及び液晶表示装置の製造方法
US8211782B2 (en) * 2009-10-23 2012-07-03 Palo Alto Research Center Incorporated Printed material constrained by well structures
US8468680B2 (en) 2010-08-24 2013-06-25 Roche Diagnostics Operations, Inc. Biosensor test member and method for making the same
CN111876020B (zh) * 2020-08-06 2021-11-05 中国科学院长春应用化学研究所 一种有机发光材料墨水及其制备方法和喷墨打印方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216330A (ja) 1999-01-26 2000-08-04 Seiko Epson Corp 積層型半導体装置およびその製造方法
TW490997B (en) 2000-03-31 2002-06-11 Seiko Epson Corp Method of manufacturing organic EL element, and organic EL element
JP2002237383A (ja) 2000-03-31 2002-08-23 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子
JP2002023783A (ja) * 2000-07-13 2002-01-25 Fujitsu Ltd 対話処理システム
CN100353548C (zh) * 2000-11-17 2007-12-05 皇家菲利浦电子有限公司 电发光器件及其制造方法
JP2003124210A (ja) 2001-10-15 2003-04-25 Seiko Epson Corp 表面処理方法、半導体デバイス、電気回路、表示体モジュール、カラーフィルタおよび発光素子
JP2003163084A (ja) 2001-11-26 2003-06-06 Seiko Epson Corp 有機ｅｌ装置とその製造方法並びに電子機器
US6677251B1 (en) * 2002-07-29 2004-01-13 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
JP4170049B2 (ja) * 2002-08-30 2008-10-22 シャープ株式会社 パターン形成基材およびパターン形成方法

Also Published As

Publication number Publication date
TWI297619B (https=) 2008-06-11
US7387903B2 (en) 2008-06-17
JP2005046828A (ja) 2005-02-24
JP4192737B2 (ja) 2008-12-10
KR100613158B1 (ko) 2006-08-17
TW200510943A (en) 2005-03-16
KR20050008493A (ko) 2005-01-21
CN1578598A (zh) 2005-02-09
US20050042850A1 (en) 2005-02-24

Similar Documents

Publication Publication Date Title
US7311937B2 (en) Method for forming a line pattern, line pattern, and electro-optic device
KR100620881B1 (ko) 패턴 형성 방법, 디바이스의 제조 방법, 및 액티브 매트릭스 기판의 제조 방법
US7713578B2 (en) Method for fabricating thin film pattern, method for fabricating device, electro-optical apparatus, and electronic apparatus
CN100396492C (zh) 喷出方法及其装置
KR100620880B1 (ko) 막패턴 형성 방법, 디바이스 및 디바이스의 제조 방법,전기 광학 장치, 전자 기기, 및 액티브 매트릭스 기판의제조 방법
CN101698373B (zh) 液状体喷出方法、配线衬底、滤色器及有机el发光元件的制法
KR100726272B1 (ko) 격벽 구조체, 격벽 구조체의 형성 방법, 디바이스, 전기 광학 장치 및 전자 기기
CN100479633C (zh) 层图案制造方法、配线制造方法、电子设备的制造方法
TWI292282B (en) Device, method of manufacture therefor, manufacturing method for active-matrix substrate, electrooptical apparatus and electronic apparatus
KR100615479B1 (ko) 전기 광학 패널의 제조 방법 및 전자 기기의 제조 방법과,전기 광학 패널, 전기 광학 장치 및 전자 기기
CN101722724B (zh) 液状体的排出方法、滤色器以及有机el装置的制造方法
CN100521875C (zh) 图案形成结构及形成方法、器件及电光学装置、电子仪器
CN100415517C (zh) 吐出装置及材料涂敷方法、滤色片基板及装置的制造方法
CN1695945B (zh) 液滴喷吐装置、电光学装置、电子设备以及液滴喷吐方法
KR100710020B1 (ko) 막 패턴의 형성 방법 및 디바이스의 제조 방법, 전기 광학장치 및 전자 기기
JP2008094044A (ja) ヘッドユニットおよび液滴吐出装置、液状体の吐出方法、カラーフィルタの製造方法、有機ｅｌ素子の製造方法、配線基板の製造方法
CN100485903C (zh) 有源矩阵基板及其制造方法、电光学装置及电子仪器
CN100399566C (zh) 有源矩阵基板及其制造方法、光电装置以及电子设备
US7524764B2 (en) Method of forming film pattern, device, method of manufacturing the same, electro-optical apparatus, and electronic apparatus
JP2003283104A (ja) デバイス製造方法、デバイス製造装置、デバイス
CN100456448C (zh) 有源矩阵基板及其制造方法、以及电光学装置及电子设备
JP2008060600A (ja) 層パターン製造方法、配線製造方法、電子機器の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090415

Termination date: 20190713

CF01 Termination of patent right due to non-payment of annual fee