KR100613158B1 - 층 패턴 제조 방법, 배선 제조 방법, 및 전자 기기의 제조방법 - Google Patents

층 패턴 제조 방법, 배선 제조 방법, 및 전자 기기의 제조방법 Download PDF

Info

Publication number
KR100613158B1
KR100613158B1 KR1020040054443A KR20040054443A KR100613158B1 KR 100613158 B1 KR100613158 B1 KR 100613158B1 KR 1020040054443 A KR1020040054443 A KR 1020040054443A KR 20040054443 A KR20040054443 A KR 20040054443A KR 100613158 B1 KR100613158 B1 KR 100613158B1
Authority
KR
South Korea
Prior art keywords
layer
liquid
manufacturing
discharged
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020040054443A
Other languages
English (en)
Korean (ko)
Other versions
KR20050008493A (ko
Inventor
사카이히로후미
사쿠라다가즈아키
Original Assignee
세이코 엡슨 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세이코 엡슨 가부시키가이샤 filed Critical 세이코 엡슨 가부시키가이샤
Publication of KR20050008493A publication Critical patent/KR20050008493A/ko
Application granted granted Critical
Publication of KR100613158B1 publication Critical patent/KR100613158B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Coating Apparatus (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Ink Jet (AREA)
  • Liquid Crystal (AREA)
KR1020040054443A 2003-07-15 2004-07-13 층 패턴 제조 방법, 배선 제조 방법, 및 전자 기기의 제조방법 Expired - Fee Related KR100613158B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2003-00274705 2003-07-15
JP2003274705 2003-07-15
JP2003327997A JP4192737B2 (ja) 2003-07-15 2003-09-19 層パターン製造方法、配線製造方法、電子機器の製造方法
JPJP-P-2003-00327997 2003-09-19

Publications (2)

Publication Number Publication Date
KR20050008493A KR20050008493A (ko) 2005-01-21
KR100613158B1 true KR100613158B1 (ko) 2006-08-17

Family

ID=34197131

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040054443A Expired - Fee Related KR100613158B1 (ko) 2003-07-15 2004-07-13 층 패턴 제조 방법, 배선 제조 방법, 및 전자 기기의 제조방법

Country Status (5)

Country Link
US (1) US7387903B2 (https=)
JP (1) JP4192737B2 (https=)
KR (1) KR100613158B1 (https=)
CN (1) CN100479633C (https=)
TW (1) TW200510943A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179213A (ja) 2004-12-21 2006-07-06 Seiko Epson Corp パターン形成基板、電気光学装置及び電気光学装置の製造方法
JP2007027588A (ja) * 2005-07-20 2007-02-01 Seiko Epson Corp 膜パターンの形成方法、デバイス、電気光学装置、及び電子機器
JP4677937B2 (ja) * 2005-07-20 2011-04-27 セイコーエプソン株式会社 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法
JP2007053333A (ja) * 2005-07-20 2007-03-01 Seiko Epson Corp 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法
JP4670596B2 (ja) * 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
JP2007178885A (ja) * 2005-12-28 2007-07-12 Az Electronic Materials Kk パターンおよび配線パターンならびにそれらの製造法
WO2007103254A2 (en) * 2006-03-02 2007-09-13 Axcess International Inc. System and method for determining location, directionality, and velocity of rfid tags
JP2007286469A (ja) 2006-04-19 2007-11-01 Seiko Epson Corp 膜パターンの形成方法、アクティブマトリクス基板の製造方法、デバイス、電気光学装置、及び電子機器
JP2008016413A (ja) * 2006-07-10 2008-01-24 Canon Inc 配線基板の製造方法、電子源の製造方法、画像表示装置の製造方法、画像再生装置
JP4222390B2 (ja) * 2006-07-25 2009-02-12 セイコーエプソン株式会社 パターンの形成方法、及び液晶表示装置の製造方法
US8211782B2 (en) * 2009-10-23 2012-07-03 Palo Alto Research Center Incorporated Printed material constrained by well structures
US8468680B2 (en) 2010-08-24 2013-06-25 Roche Diagnostics Operations, Inc. Biosensor test member and method for making the same
CN111876020B (zh) * 2020-08-06 2021-11-05 中国科学院长春应用化学研究所 一种有机发光材料墨水及其制备方法和喷墨打印方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216330A (ja) 1999-01-26 2000-08-04 Seiko Epson Corp 積層型半導体装置およびその製造方法
TW490997B (en) 2000-03-31 2002-06-11 Seiko Epson Corp Method of manufacturing organic EL element, and organic EL element
JP2002237383A (ja) 2000-03-31 2002-08-23 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子
JP2002023783A (ja) * 2000-07-13 2002-01-25 Fujitsu Ltd 対話処理システム
CN100353548C (zh) * 2000-11-17 2007-12-05 皇家菲利浦电子有限公司 电发光器件及其制造方法
JP2003124210A (ja) 2001-10-15 2003-04-25 Seiko Epson Corp 表面処理方法、半導体デバイス、電気回路、表示体モジュール、カラーフィルタおよび発光素子
JP2003163084A (ja) 2001-11-26 2003-06-06 Seiko Epson Corp 有機ｅｌ装置とその製造方法並びに電子機器
US6677251B1 (en) * 2002-07-29 2004-01-13 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
JP4170049B2 (ja) * 2002-08-30 2008-10-22 シャープ株式会社 パターン形成基材およびパターン形成方法

Also Published As

Publication number Publication date
TWI297619B (https=) 2008-06-11
US7387903B2 (en) 2008-06-17
JP2005046828A (ja) 2005-02-24
JP4192737B2 (ja) 2008-12-10
TW200510943A (en) 2005-03-16
KR20050008493A (ko) 2005-01-21
CN100479633C (zh) 2009-04-15
CN1578598A (zh) 2005-02-09
US20050042850A1 (en) 2005-02-24

Similar Documents

Publication Publication Date Title
KR100613158B1 (ko) 층 패턴 제조 방법, 배선 제조 방법, 및 전자 기기의 제조방법
KR100907737B1 (ko) 액상체의 토출 방법, 배선 기판의 제조 방법, 컬러 필터의제조 방법, 유기 ｅｌ 발광 소자의 제조 방법
KR100620881B1 (ko) 패턴 형성 방법, 디바이스의 제조 방법, 및 액티브 매트릭스 기판의 제조 방법
US20060251804A1 (en) Ejecting method and ejecting apparatus
KR100490195B1 (ko) 액적 토출 장치와 그 구동 방법, 제막 장치와 제막 방법,컬러 필터의 제조 방법, 유기 ｅｌ 장치의 제조 방법, 및전자 기기
KR100726272B1 (ko) 격벽 구조체, 격벽 구조체의 형성 방법, 디바이스, 전기 광학 장치 및 전자 기기
KR100615479B1 (ko) 전기 광학 패널의 제조 방법 및 전자 기기의 제조 방법과,전기 광학 패널, 전기 광학 장치 및 전자 기기
US20080204502A1 (en) Method of measuring landed dot, measuring apparatus for landed dot, liquid droplet ejection apparatus, method of manufacturing electro-optic apparatus, electro-optic apparatus, and electronic apparatus
KR20080034404A (ko) 헤드 유닛 및 액적 토출 장치, 액상체의 토출 방법, 컬러필터의 제조 방법, 유기 ｅｌ 소자의 제조 방법, 배선기판의 제조 방법
US8523319B2 (en) Method for arranging liquid droplet ejection heads, head unit, liquid droplet ejection apparatus, method for manufacturing electro-optical apparatus, electro-optical apparatus, and electronic device
CN101722724B (zh) 液状体的排出方法、滤色器以及有机el装置的制造方法
KR20020077123A (ko) 유기 ｅｌ 표시체 및 그 제조 장치와 컬러 필터의 제조 장치
US7784425B2 (en) Droplet ejecting apparatus, electro-optic device, electronic apparatus, and droplet ejecting method
KR100710020B1 (ko) 막 패턴의 형성 방법 및 디바이스의 제조 방법, 전기 광학장치 및 전자 기기
CN100388082C (zh) 头单元、液滴喷射装置、制造面板方法、显示及电子装置
KR100753953B1 (ko) 액티브 매트릭스 기판의 제조 방법, 액티브 매트릭스 기판,전기 광학 장치및 전자 기기
US20060088700A1 (en) Apparatus for ejecting liquid droplet, work to be applied thereto, method of manufacturing electro-optic device, electro-optic device, and electronic equipment
KR100716217B1 (ko) 액티브 매트릭스 기판의 제조 방법
JP2003283104A (ja) デバイス製造方法、デバイス製造装置、デバイス
JP2008060600A (ja) 層パターン製造方法、配線製造方法、電子機器の製造方法
KR100734499B1 (ko) 액체 방울 토출 방법, 전기 광학 장치의 제조 방법 및 전자기기
KR100715297B1 (ko) 배선 패턴 형성 방법, ｔｆｔ용 소스 전극 및 드레인전극의 형성 방법
US20070115421A1 (en) Color filter substrate, liquid crystal display, and electronic device, and method for manufacturing color filter substrate and method for manufacturing liquid crystal display
JP2005285616A (ja) 薄膜形成方法、電気光学装置の製造方法、カラーフィルタの製造方法および液滴吐出装置
JP4458073B2 (ja) 液滴吐出装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20120724

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

FPAY Annual fee payment

Payment date: 20130722

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20140722

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20150716

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20160720

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20170720

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

FPAY Annual fee payment

Payment date: 20180719

Year of fee payment: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190810

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190810

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000