JP4192737B2 - 層パターン製造方法、配線製造方法、電子機器の製造方法 - Google Patents

層パターン製造方法、配線製造方法、電子機器の製造方法 Download PDF

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Publication number
JP4192737B2
JP4192737B2 JP2003327997A JP2003327997A JP4192737B2 JP 4192737 B2 JP4192737 B2 JP 4192737B2 JP 2003327997 A JP2003327997 A JP 2003327997A JP 2003327997 A JP2003327997 A JP 2003327997A JP 4192737 B2 JP4192737 B2 JP 4192737B2
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Japan
Prior art keywords
layer
discharged
liquid
manufacturing
substrate
Prior art date
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Expired - Fee Related
Application number
JP2003327997A
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English (en)
Japanese (ja)
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JP2005046828A (ja
Inventor
寛文 酒井
和昭 桜田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
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Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2003327997A priority Critical patent/JP4192737B2/ja
Priority to TW093119213A priority patent/TW200510943A/zh
Priority to US10/887,822 priority patent/US7387903B2/en
Priority to CNB2004100638610A priority patent/CN100479633C/zh
Priority to KR1020040054443A priority patent/KR100613158B1/ko
Publication of JP2005046828A publication Critical patent/JP2005046828A/ja
Application granted granted Critical
Publication of JP4192737B2 publication Critical patent/JP4192737B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
    • H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electroluminescent Light Sources (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Coating Apparatus (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Ink Jet (AREA)
  • Liquid Crystal (AREA)
JP2003327997A 2003-07-15 2003-09-19 層パターン製造方法、配線製造方法、電子機器の製造方法 Expired - Fee Related JP4192737B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003327997A JP4192737B2 (ja) 2003-07-15 2003-09-19 層パターン製造方法、配線製造方法、電子機器の製造方法
TW093119213A TW200510943A (en) 2003-07-15 2004-06-29 Method for manufacturing layer pattern, wiring and electronic equipment
US10/887,822 US7387903B2 (en) 2003-07-15 2004-07-12 Method for manufacturing layer pattern, method for manufacturing wiring, and method for manufacturing electronic equipment
CNB2004100638610A CN100479633C (zh) 2003-07-15 2004-07-13 层图案制造方法、配线制造方法、电子设备的制造方法
KR1020040054443A KR100613158B1 (ko) 2003-07-15 2004-07-13 층 패턴 제조 방법, 배선 제조 방법, 및 전자 기기의 제조방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003274705 2003-07-15
JP2003327997A JP4192737B2 (ja) 2003-07-15 2003-09-19 層パターン製造方法、配線製造方法、電子機器の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007273501A Division JP2008060600A (ja) 2003-07-15 2007-10-22 層パターン製造方法、配線製造方法、電子機器の製造方法

Publications (2)

Publication Number Publication Date
JP2005046828A JP2005046828A (ja) 2005-02-24
JP4192737B2 true JP4192737B2 (ja) 2008-12-10

Family

ID=34197131

Family Applications (1)

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JP2003327997A Expired - Fee Related JP4192737B2 (ja) 2003-07-15 2003-09-19 層パターン製造方法、配線製造方法、電子機器の製造方法

Country Status (5)

Country Link
US (1) US7387903B2 (https=)
JP (1) JP4192737B2 (https=)
KR (1) KR100613158B1 (https=)
CN (1) CN100479633C (https=)
TW (1) TW200510943A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179213A (ja) 2004-12-21 2006-07-06 Seiko Epson Corp パターン形成基板、電気光学装置及び電気光学装置の製造方法
JP2007027588A (ja) * 2005-07-20 2007-02-01 Seiko Epson Corp 膜パターンの形成方法、デバイス、電気光学装置、及び電子機器
JP4677937B2 (ja) * 2005-07-20 2011-04-27 セイコーエプソン株式会社 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法
JP2007053333A (ja) * 2005-07-20 2007-03-01 Seiko Epson Corp 膜パターンの形成方法、デバイス、電気光学装置、電子機器、及びアクティブマトリクス基板の製造方法
JP4670596B2 (ja) * 2005-11-04 2011-04-13 セイコーエプソン株式会社 膜パターン形成方法、デバイス、電気光学装置、及び電子機器
JP2007178885A (ja) * 2005-12-28 2007-07-12 Az Electronic Materials Kk パターンおよび配線パターンならびにそれらの製造法
WO2007103254A2 (en) * 2006-03-02 2007-09-13 Axcess International Inc. System and method for determining location, directionality, and velocity of rfid tags
JP2007286469A (ja) 2006-04-19 2007-11-01 Seiko Epson Corp 膜パターンの形成方法、アクティブマトリクス基板の製造方法、デバイス、電気光学装置、及び電子機器
JP2008016413A (ja) * 2006-07-10 2008-01-24 Canon Inc 配線基板の製造方法、電子源の製造方法、画像表示装置の製造方法、画像再生装置
JP4222390B2 (ja) * 2006-07-25 2009-02-12 セイコーエプソン株式会社 パターンの形成方法、及び液晶表示装置の製造方法
US8211782B2 (en) * 2009-10-23 2012-07-03 Palo Alto Research Center Incorporated Printed material constrained by well structures
US8468680B2 (en) 2010-08-24 2013-06-25 Roche Diagnostics Operations, Inc. Biosensor test member and method for making the same
CN111876020B (zh) * 2020-08-06 2021-11-05 中国科学院长春应用化学研究所 一种有机发光材料墨水及其制备方法和喷墨打印方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216330A (ja) 1999-01-26 2000-08-04 Seiko Epson Corp 積層型半導体装置およびその製造方法
TW490997B (en) 2000-03-31 2002-06-11 Seiko Epson Corp Method of manufacturing organic EL element, and organic EL element
JP2002237383A (ja) 2000-03-31 2002-08-23 Seiko Epson Corp 有機ｅｌ素子の製造方法、有機ｅｌ素子
JP2002023783A (ja) * 2000-07-13 2002-01-25 Fujitsu Ltd 対話処理システム
CN100353548C (zh) * 2000-11-17 2007-12-05 皇家菲利浦电子有限公司 电发光器件及其制造方法
JP2003124210A (ja) 2001-10-15 2003-04-25 Seiko Epson Corp 表面処理方法、半導体デバイス、電気回路、表示体モジュール、カラーフィルタおよび発光素子
JP2003163084A (ja) 2001-11-26 2003-06-06 Seiko Epson Corp 有機ｅｌ装置とその製造方法並びに電子機器
US6677251B1 (en) * 2002-07-29 2004-01-13 Taiwan Semiconductor Manufacturing Co., Ltd Method for forming a hydrophilic surface on low-k dielectric insulating layers for improved adhesion
JP4170049B2 (ja) * 2002-08-30 2008-10-22 シャープ株式会社 パターン形成基材およびパターン形成方法

Also Published As

Publication number Publication date
TWI297619B (https=) 2008-06-11
US7387903B2 (en) 2008-06-17
JP2005046828A (ja) 2005-02-24
KR100613158B1 (ko) 2006-08-17
TW200510943A (en) 2005-03-16
KR20050008493A (ko) 2005-01-21
CN100479633C (zh) 2009-04-15
CN1578598A (zh) 2005-02-09
US20050042850A1 (en) 2005-02-24

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