CN100474525C - 立式热处理装置及其使用方法 - Google Patents

立式热处理装置及其使用方法 Download PDF

Info

Publication number
CN100474525C
CN100474525C CNB200580000806XA CN200580000806A CN100474525C CN 100474525 C CN100474525 C CN 100474525C CN B200580000806X A CNB200580000806X A CN B200580000806XA CN 200580000806 A CN200580000806 A CN 200580000806A CN 100474525 C CN100474525 C CN 100474525C
Authority
CN
China
Prior art keywords
exhaust
auxiliary heater
heater
oral area
exhaust port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB200580000806XA
Other languages
English (en)
Chinese (zh)
Other versions
CN1842898A (zh
Inventor
中嶋亘
及川拓也
井上久司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1842898A publication Critical patent/CN1842898A/zh
Application granted granted Critical
Publication of CN100474525C publication Critical patent/CN100474525C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90Thermal treatments, e.g. annealing or sintering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0434Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Processing Of Solid Wastes (AREA)
  • Drying Of Solid Materials (AREA)
  • Muffle Furnaces And Rotary Kilns (AREA)
CNB200580000806XA 2004-08-26 2005-08-24 立式热处理装置及其使用方法 Expired - Fee Related CN100474525C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004246578A JP4503397B2 (ja) 2004-08-26 2004-08-26 縦型熱処理装置及びその処理容器急速降温方法
JP246578/2004 2004-08-26

Publications (2)

Publication Number Publication Date
CN1842898A CN1842898A (zh) 2006-10-04
CN100474525C true CN100474525C (zh) 2009-04-01

Family

ID=35967511

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200580000806XA Expired - Fee Related CN100474525C (zh) 2004-08-26 2005-08-24 立式热处理装置及其使用方法

Country Status (7)

Country Link
US (1) US7935188B2 (enExample)
EP (1) EP1801862A4 (enExample)
JP (1) JP4503397B2 (enExample)
KR (1) KR100958766B1 (enExample)
CN (1) CN100474525C (enExample)
TW (1) TW200623262A (enExample)
WO (1) WO2006022303A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4791303B2 (ja) * 2006-09-19 2011-10-12 株式会社日立国際電気 基板処理装置およびこの装置に用いられる冷却手段、icの製造方法
JP4335908B2 (ja) * 2006-12-22 2009-09-30 東京エレクトロン株式会社 縦型熱処理装置及び縦型熱処理方法
KR101387817B1 (ko) * 2007-02-19 2014-04-21 닛폰 하츠죠 가부시키가이샤 열교환기 및 종형 열처리장치
JP5504793B2 (ja) * 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
KR101094279B1 (ko) * 2009-11-06 2011-12-19 삼성모바일디스플레이주식회사 가열 수단 및 이를 포함하는 기판 가공 장치
CN102925873A (zh) * 2011-08-09 2013-02-13 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室控温装置及应用该控温装置的半导体处理设备
TWI442013B (zh) * 2011-10-04 2014-06-21 Kern Energy Entpr Co Ltd 熱處理爐結構
JP6616265B2 (ja) * 2015-10-16 2019-12-04 株式会社Kokusai Electric 加熱部、基板処理装置、及び半導体装置の製造方法
CN113140487B (zh) * 2021-04-14 2024-05-17 北京北方华创微电子装备有限公司 半导体热处理设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121579A (en) * 1996-02-28 2000-09-19 Tokyo Electron Limited Heating apparatus, and processing apparatus
CN2573509Y (zh) * 2001-11-08 2003-09-17 东京毅力科创株式会社 热处理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4753192A (en) * 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
DE8801785U1 (de) * 1988-02-11 1988-11-10 Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien
JPH0645335A (ja) 1992-07-24 1994-02-18 Nec Corp 半導体装置の配線修正装置
JP2586600Y2 (ja) * 1992-11-19 1998-12-09 大日本スクリーン製造株式会社 基板加熱処理装置
JP3218164B2 (ja) * 1995-05-31 2001-10-15 東京エレクトロン株式会社 被処理体の支持ボート、熱処理装置及び熱処理方法
JPH0997787A (ja) * 1995-09-30 1997-04-08 Tokyo Electron Ltd 処理装置
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
JP4036598B2 (ja) * 2000-03-31 2008-01-23 株式会社日立国際電気 熱処理装置
US7256370B2 (en) * 2002-03-15 2007-08-14 Steed Technology, Inc. Vacuum thermal annealer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121579A (en) * 1996-02-28 2000-09-19 Tokyo Electron Limited Heating apparatus, and processing apparatus
CN2573509Y (zh) * 2001-11-08 2003-09-17 东京毅力科创株式会社 热处理装置

Also Published As

Publication number Publication date
TW200623262A (en) 2006-07-01
JP4503397B2 (ja) 2010-07-14
US7935188B2 (en) 2011-05-03
US20080187652A1 (en) 2008-08-07
EP1801862A1 (en) 2007-06-27
KR20070044798A (ko) 2007-04-30
KR100958766B1 (ko) 2010-05-18
TWI361463B (enExample) 2012-04-01
EP1801862A4 (en) 2009-03-11
WO2006022303A1 (ja) 2006-03-02
JP2006066590A (ja) 2006-03-09
CN1842898A (zh) 2006-10-04

Similar Documents

Publication Publication Date Title
JP3190165B2 (ja) 縦型熱処理装置及び熱処理方法
US6403927B1 (en) Heat-processing apparatus and method of semiconductor process
EP0480181B1 (en) Method and apparatus for batch processing of a semiconductor wafer
CN100474525C (zh) 立式热处理装置及其使用方法
TW300327B (enExample)
TWI498991B (zh) 基板處理裝置及半導體裝置之製造方法
CN103000552A (zh) 基板冷却机构、基板冷却方法和热处理装置
US20230417488A1 (en) Heat treatment apparatus and temperature regulation method of heat treatment apparatus
KR101898340B1 (ko) 로드록 장치에 있어서의 기판 냉각 방법, 기판 반송 방법, 및 로드록 장치
WO2007007744A1 (ja) 基板載置機構および基板処理装置
KR100921026B1 (ko) 진공 처리 장치 및 진공 처리 방법
JP5770042B2 (ja) 熱処理装置
JP4718054B2 (ja) 縦型熱処理装置
JP2001068425A (ja) 半導体熱処理装置及び方法
KR100350612B1 (ko) 이중수직형열처리로(爐)
JP4298899B2 (ja) 縦型熱処理装置
JP4448238B2 (ja) 縦型熱処理装置
JP2000021784A (ja) 処理容器およびヒーターの移替え治具および移替え方法
JP2004146509A (ja) 基板処理装置
JP2009099728A (ja) 半導体製造装置
JP2003273038A (ja) 縦型熱処理装置
JP2000021801A (ja) 枚葉式熱処理装置
JPH04177837A (ja) 縦型熱処理装置
JP2004146510A (ja) 縦型熱処理装置
JPH0378226A (ja) 縦型熱処理炉

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090401

Termination date: 20150824

EXPY Termination of patent right or utility model