TW200623262A - Vertical heat treatment apparatus and method of rapid heat reduction of its treatment container - Google Patents
Vertical heat treatment apparatus and method of rapid heat reduction of its treatment containerInfo
- Publication number
- TW200623262A TW200623262A TW094129403A TW94129403A TW200623262A TW 200623262 A TW200623262 A TW 200623262A TW 094129403 A TW094129403 A TW 094129403A TW 94129403 A TW94129403 A TW 94129403A TW 200623262 A TW200623262 A TW 200623262A
- Authority
- TW
- Taiwan
- Prior art keywords
- treatment container
- exhaust opening
- heat
- treatment
- treatment apparatus
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Muffle Furnaces And Rotary Kilns (AREA)
- Processing Of Solid Wastes (AREA)
- Drying Of Solid Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004246578A JP4503397B2 (ja) | 2004-08-26 | 2004-08-26 | 縦型熱処理装置及びその処理容器急速降温方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200623262A true TW200623262A (en) | 2006-07-01 |
TWI361463B TWI361463B (zh) | 2012-04-01 |
Family
ID=35967511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094129403A TW200623262A (en) | 2004-08-26 | 2005-08-26 | Vertical heat treatment apparatus and method of rapid heat reduction of its treatment container |
Country Status (7)
Country | Link |
---|---|
US (1) | US7935188B2 (zh) |
EP (1) | EP1801862A4 (zh) |
JP (1) | JP4503397B2 (zh) |
KR (1) | KR100958766B1 (zh) |
CN (1) | CN100474525C (zh) |
TW (1) | TW200623262A (zh) |
WO (1) | WO2006022303A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4791303B2 (ja) * | 2006-09-19 | 2011-10-12 | 株式会社日立国際電気 | 基板処理装置およびこの装置に用いられる冷却手段、icの製造方法 |
JP4335908B2 (ja) * | 2006-12-22 | 2009-09-30 | 東京エレクトロン株式会社 | 縦型熱処理装置及び縦型熱処理方法 |
KR101387817B1 (ko) * | 2007-02-19 | 2014-04-21 | 닛폰 하츠죠 가부시키가이샤 | 열교환기 및 종형 열처리장치 |
JP5504793B2 (ja) * | 2009-09-26 | 2014-05-28 | 東京エレクトロン株式会社 | 熱処理装置及び冷却方法 |
KR101094279B1 (ko) * | 2009-11-06 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 가열 수단 및 이를 포함하는 기판 가공 장치 |
CN102925873A (zh) * | 2011-08-09 | 2013-02-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 反应腔室控温装置及应用该控温装置的半导体处理设备 |
TWI442013B (zh) * | 2011-10-04 | 2014-06-21 | Kern Energy Entpr Co Ltd | 熱處理爐結構 |
JP6616265B2 (ja) * | 2015-10-16 | 2019-12-04 | 株式会社Kokusai Electric | 加熱部、基板処理装置、及び半導体装置の製造方法 |
CN113140487B (zh) * | 2021-04-14 | 2024-05-17 | 北京北方华创微电子装备有限公司 | 半导体热处理设备 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4753192A (en) * | 1987-01-08 | 1988-06-28 | Btu Engineering Corporation | Movable core fast cool-down furnace |
DE8801785U1 (de) * | 1988-02-11 | 1988-11-10 | Söhlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried | Vorrichtung zur Temperaturbehandlung von Halbleitermaterialien |
JPH0645335A (ja) | 1992-07-24 | 1994-02-18 | Nec Corp | 半導体装置の配線修正装置 |
JP2586600Y2 (ja) * | 1992-11-19 | 1998-12-09 | 大日本スクリーン製造株式会社 | 基板加熱処理装置 |
JP3218164B2 (ja) * | 1995-05-31 | 2001-10-15 | 東京エレクトロン株式会社 | 被処理体の支持ボート、熱処理装置及び熱処理方法 |
JPH0997787A (ja) * | 1995-09-30 | 1997-04-08 | Tokyo Electron Ltd | 処理装置 |
US20030164225A1 (en) * | 1998-04-20 | 2003-09-04 | Tadashi Sawayama | Processing apparatus, exhaust processing process and plasma processing |
JP4036598B2 (ja) * | 2000-03-31 | 2008-01-23 | 株式会社日立国際電気 | 熱処理装置 |
JP2003209063A (ja) * | 2001-11-08 | 2003-07-25 | Tokyo Electron Ltd | 熱処理装置および熱処理方法 |
US7256370B2 (en) * | 2002-03-15 | 2007-08-14 | Steed Technology, Inc. | Vacuum thermal annealer |
-
2004
- 2004-08-26 JP JP2004246578A patent/JP4503397B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-24 EP EP05775200A patent/EP1801862A4/en not_active Withdrawn
- 2005-08-24 US US11/660,898 patent/US7935188B2/en not_active Expired - Fee Related
- 2005-08-24 WO PCT/JP2005/015367 patent/WO2006022303A1/ja active Application Filing
- 2005-08-24 CN CNB200580000806XA patent/CN100474525C/zh not_active Expired - Fee Related
- 2005-08-24 KR KR1020067014057A patent/KR100958766B1/ko not_active IP Right Cessation
- 2005-08-26 TW TW094129403A patent/TW200623262A/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100958766B1 (ko) | 2010-05-18 |
KR20070044798A (ko) | 2007-04-30 |
US20080187652A1 (en) | 2008-08-07 |
JP4503397B2 (ja) | 2010-07-14 |
EP1801862A4 (en) | 2009-03-11 |
EP1801862A1 (en) | 2007-06-27 |
TWI361463B (zh) | 2012-04-01 |
US7935188B2 (en) | 2011-05-03 |
WO2006022303A1 (ja) | 2006-03-02 |
JP2006066590A (ja) | 2006-03-09 |
CN100474525C (zh) | 2009-04-01 |
CN1842898A (zh) | 2006-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |