CN100468574C - 非易失性半导体存储器件 - Google Patents

非易失性半导体存储器件 Download PDF

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Publication number
CN100468574C
CN100468574C CNB2005100685137A CN200510068513A CN100468574C CN 100468574 C CN100468574 C CN 100468574C CN B2005100685137 A CNB2005100685137 A CN B2005100685137A CN 200510068513 A CN200510068513 A CN 200510068513A CN 100468574 C CN100468574 C CN 100468574C
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CN
China
Prior art keywords
instruction
special
special instruction
decoder
control signal
Prior art date
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Expired - Fee Related
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CNB2005100685137A
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English (en)
Chinese (zh)
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CN1691206A (zh
Inventor
小宫学
富田泰弘
诹访仁史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Publication of CN1691206A publication Critical patent/CN1691206A/zh
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Publication of CN100468574C publication Critical patent/CN100468574C/zh
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/22Safety or protection circuits preventing unauthorised or accidental access to memory cells

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  • Engineering & Computer Science (AREA)
  • Computer Security & Cryptography (AREA)
  • Read Only Memory (AREA)
CNB2005100685137A 2004-04-28 2005-04-28 非易失性半导体存储器件 Expired - Fee Related CN100468574C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP134486/2004 2004-04-28
JP2004134486A JP2005317127A (ja) 2004-04-28 2004-04-28 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
CN1691206A CN1691206A (zh) 2005-11-02
CN100468574C true CN100468574C (zh) 2009-03-11

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Family Applications (1)

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CNB2005100685137A Expired - Fee Related CN100468574C (zh) 2004-04-28 2005-04-28 非易失性半导体存储器件

Country Status (3)

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US (1) US7310277B2 (https=)
JP (1) JP2005317127A (https=)
CN (1) CN100468574C (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100718042B1 (ko) 2006-04-06 2007-05-14 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 테스트 방법
CN103677748A (zh) * 2012-09-26 2014-03-26 北京兆易创新科技股份有限公司 非易失性存储器指令处理的装置及方法
CN104657684B (zh) * 2014-08-27 2018-01-30 北京中电华大电子设计有限责任公司 增强智能卡可靠性的方法
JP2017045415A (ja) 2015-08-28 2017-03-02 株式会社東芝 メモリシステム
JP2018014050A (ja) 2016-07-22 2018-01-25 東芝メモリ株式会社 メモリシステム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5361341A (en) 1987-10-02 1994-11-01 Sgs-Thomson Microelectronics, S.A. Device for enabling the use of the contents of memory areas of an electronic microprocessor system
JPH07182885A (ja) 1993-02-05 1995-07-21 Toshiba Corp 半導体記憶装置
US6260172B1 (en) 1997-09-05 2001-07-10 Nippon Steel Corporation Semiconductor device with logic rewriting and security protection function
JPH11110293A (ja) * 1997-09-29 1999-04-23 Mitsubishi Electric Corp 不揮発性メモリ制御回路
JP3625377B2 (ja) * 1998-05-25 2005-03-02 ローム株式会社 半導体発光素子
JP4079552B2 (ja) * 1999-07-16 2008-04-23 富士通株式会社 不正コピーを防止した不揮発性半導体メモリ
JP2002074996A (ja) * 2000-08-25 2002-03-15 Mitsubishi Electric Corp 半導体集積回路
JP2002288988A (ja) * 2001-03-28 2002-10-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置
JP3961806B2 (ja) * 2001-10-18 2007-08-22 富士通株式会社 不揮発性半導体記憶装置
US6996692B2 (en) * 2002-04-17 2006-02-07 Matsushita Electric Industrial Co., Ltd. Nonvolatile semiconductor memory device and method for providing security for the same
JP4327626B2 (ja) * 2004-03-12 2009-09-09 株式会社東芝 不揮発性半導体記憶装置

Also Published As

Publication number Publication date
JP2005317127A (ja) 2005-11-10
CN1691206A (zh) 2005-11-02
US20050243616A1 (en) 2005-11-03
US7310277B2 (en) 2007-12-18

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090311

Termination date: 20110428