CN100449745C - 具有外部连接器侧管芯的热增强电子倒装芯片封装和方法 - Google Patents
具有外部连接器侧管芯的热增强电子倒装芯片封装和方法 Download PDFInfo
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Abstract
一种用于制造具有改良导热性和频响性封装的方法和装置。相对较厚的基片,例如铜,在一个表面粘合有布线层,其相对面暴露在外,例如成为用来连接散热器的表面。一个或多个芯片粘合在布线层上,同时一个阵列的连接体,例如焊料球被提供在芯片外围用于连接至印刷电路板。在某些实施例中,印刷电路板开有芯片可扩展进入的窗口,以允许更小的外部连接焊料球。在某些实施例中,第二散热器通过PCB上的开口连接到芯片背面。
Description
技术领域
本发明涉及电子封装制造领域,尤其涉及一种制造具有位于与外部连接器相同封装侧的芯片管芯的热增强电子倒装芯片/焊料球封装的方法和装置。
背景技术
裸露的电子芯片通常需要包装至封装内,所述封装提供电路至芯片上每个电气连接和外部连接体,诸如管脚和焊球。典型的针栅阵列封装具有在一侧用于外部连接的相对较大的管脚,和位于相反一侧的用于连接球栅阵列组至电子芯片(诸如处理器或存储器芯片)的焊盘。另一典型球栅阵列封装有在封装的一侧用于外部连接的相对较大间隔内具有相对较大的球(例如在球栅阵列中)和在同一侧用于连接球栅阵列组至电子芯片(例如处理器和存储器芯片)的小密间隔焊盘。
典型的此类封装具有包含有位于基片表面或内部的导电轨迹(金属线)非导电基片(例如塑料薄膜或塑料层)。一些封装包括多个芯片,例如一个或多个逻辑或处理芯片,和/或一个或多个存储芯片,例如一个闪存型可重复编程非易失性存储器。球和/或管脚连接到封装的外部,同时一个或多个电子芯片由例如也使用球栅阵列连接方法和/或飞线方法相连接。可选择一个外壳或密封剂封装芯片。
制造这类封装的常规方法是开始选用一片或一条例如聚脂薄膜或玻璃纤维增强环氧基片此类的非导电材料,然后沉积一层金属(例如铜)膜,再刻模(pattern)和腐蚀金属形成轨迹。有时,经由过孔将一侧的轨迹或者内层连接到另一侧或者另一内层的轨迹。芯片便经由轨迹连接到焊盘,有时同时由密封剂形成封装。此种封装通常热传导性能不佳。
芯片在极高频率下工作,例如,超过40千兆赫,为了提供足够的信号能力也有类型、厚度、间隔和轨迹设计等方面的限制。进一步,这类芯片通常需要在很低的电压(例如1伏)和很高的电流(例如100安培)下运行,这些必须被提供以保证达到设计所需的高频率。
我们需要的是一种简单、廉价、可靠的方法和装置制造电子芯片的封装,使用封装需提供高的导热和散热性能,和高的频率响应。
发明内容
本发明旨在解决上述技术问题。
根据本发明的一种装置包括:导热芯,它具有第一面和第二面,其中导热芯的第二面暴露在外;布线层,它具有附着到第一面的电绝缘层,和通过绝缘层而与导热芯分离的多个导电轨迹,其中导热芯厚于布线层;第一芯片,它使用球栅阵列焊料球附着到多个轨迹中的至少部分轨迹;和多个外部电连接体,它被附着到所述轨迹,其中导热芯包含合金层,所述合金层具有附着在第二面上的含铜的层
根据本发明的一种方法,包括:提供导热芯与第一芯片,其中所述导热芯具有第一面和第二面,第二面暴露在外;用具有通过绝缘层而与导热芯分离的多个导电轨迹的布线层覆盖导热芯的第一面,其中布线层薄于导热芯;用第一多个焊料球将第一芯片附着到所述轨迹;和将多个外部导体附着到所述轨迹,其中导热芯包括合金层,所述合金层具有附着在第二面上的含铜的层。
根据本发明的一种装置,包括:芯片;和附着到芯片的用于导热至所附散热装置的装置,其中导热装置包括用于更好地匹配芯片热膨胀系数的装置,该导热装置包括导热芯,具有第一面和第二面,其中导热芯的第二面暴露在外,导热芯包括合金层,所述合金层具有附着在第二面上的含铜的层
附图说明
图1是外部连接体侧封装100的透视剖视图。
图2是球侧管芯封装200的透视剖视图。
图3是在附加散热器的装置380中的球侧管芯封装300的透视剖视图。
图4是带管脚的外部连接体侧管芯封装400的透视剖视图。
图5是带焊盘的外部连接侧封装500的透视剖视图。
图6是带焊料球的球侧管芯封装600的剖视图。
图7A是球侧管芯封装700的剖视图。
图7B是将要切割成多个球侧管芯封装700’的片材701的顶视图。
图7C是将要切割成多个球侧管芯封装700的片材702的顶视图。
图8A是球侧管芯封装800的剖视图。
图8B是将要切割成多个球侧管芯封装800’的片材801的顶视图。
图8C是将要切割成多个球侧管芯封装800的片材802的顶视图。
图9是实现本发明所述方法的机器900的示意图。
具体实施方式
在以下的最佳实施方式的详细描述中,结合附图做出的参考据此形成一部分,并以在本发明可被实现的具体实施例中明示出来。可以被理解的是,其他可利用的实施例和可做出的结构改变皆落在本发明的范围内。
出现在图中的参考数字首位阿拉伯数位大体与元件首次引入图号相应,以使同一参考数字在多个图中出现始终都代表同一元件。相同的参考数字或标签可涉及信号和连接,而且实际意义在它所使用的上下文中是明确可见的。
术语
术语:芯片、管芯、集成电路、单片电路器件、半导体器件和微电子器件,在本说明书中交替使用。
术语:金属线、轨迹、电线、导体、信号通道和信号介质皆互为相关。以上列出的相关术语,大体上可交替使用,并以从特殊到一般的顺序出现。在此领域中,金属线有时指代轨迹、电线、线路、互联或简单金属。金属线,通常是铜(Cu)或由Cu和其他例如镍(Ni)、铝(Al)、钛(Ti)、钼(Mo)等金属构成的合金,或由不同金属、合金或其他组合的堆叠层,是为耦合、互连或者电路提供信号通路的导体。除了金属的其他导体也可在微电子器件中使用。诸如掺杂多晶硅、掺杂单晶硅(通常提及的时候简单称为扩散,不论此种掺杂是由热扩散还是离子植入完成的)、钛(Ti)、钼(Mo)这类材料,以及高熔点金属硅化物是其他导体的例子。
在此描述中,术语金属指代纯单金属元素和含有两种或以上元素的合金或组合,其中至少有一种是金属元素。
术语基片或芯(core)通常指代经由各种处理操作达到期望的微电子配置的基本工件的物质实体。基片可以包括导体材料(例如铜或铝)、绝缘材料(例如兰宝石、陶瓷或塑料)、半导体材料(例如硅)、非半导体或由半导体与非半导体材料的组合、或其他由上述材料构成的组合。在某些实施例中,基片包括分层结构,例如选择热膨胀系数(CTE)更加匹配临近结构(诸如硅处理器芯片)的CTE片材或材料片(诸如铁镍合金)。在某些实施例中,这样的基片芯层压为选择电和/或热传导性的材料片材(诸如,铜或铝合金),其顺次由选择其电绝缘性、稳定性、凹凸特性的塑料层覆盖。在某些实施例中,所述塑料具有由诸如塑料的绝缘材料隔开的一个或多个层中沉积的线路轨迹。
术语垂直的被定义为基本与基片主表面垂直。高度或深度指代在与基片主表面垂直方向上的距离。
图1是外部连接体侧管芯封装100的透视剖视图。封装100包括导热芯120,其第一面121与电绝缘层110(有布线轨迹)相连,第二面122暴露在外。在某些实施例中,导热芯120由金属制成,例如均匀的铜或铜合金片材,或者具有层压或者镀敷结构,例如铁镍合金层,还有附着到一个或两个面上的含铜的层或箔。层110有一层或多层布线层92位于其上或其中。在某些实施例中,外部连接体包括多个焊料球193以例如球栅阵列的形式安排。
参考数字90通常指代任何附在导热芯120和绝缘层110下面的芯片,而诸如190、290、390等的数字指代在其中描述了芯片的某些特性的不同实施例。参考数字93通常指代任何附在导热芯120和绝缘层110下面的外部连接体,而诸如193,493,593等的数字指代在其中描述了芯片的某些特性的不同实施例。
在某些实施例中,绝缘层110包括在叠层内的彼此联结的多个绝缘片材,其中一级布线层92位于各片材之间。在某些实施例中,一级布线层92在绝缘层110的底面上,如图所示。在某些实施例中,在每个布线轨迹一端处的焊盘为连接芯片90的焊料球91之一提供触点,且更大的焊盘在另一端为外部连接体93之一提供触点。
其上具有电路(诸如处理器、存储器或者其他逻辑或模拟电路)的芯片90例如通过用焊料球91附着至布线层92。在某些实施例中,芯片90是如图1所示的薄化芯片190,其中芯片在电路成型后被薄化,例如提供化学-机械抛光(CMP)或其他合适的薄化方法。在某些实施例中,由于用于外部连接体93的焊料球的相对较小尺寸需要薄化芯片,因为如果芯片90厚于焊料球193的直径并置于相对平面印刷电路母板,则焊料球193将不能到达印刷电路母板。因此,在某些实施例中,通过提供充分薄化的芯片190,可实现小焊料球193与印刷电路板间的合适接触。在其他实施例中,芯片190未薄化,但焊料球193具有足够大的直径(即,大于芯片90的厚度)这样安装时焊料球到达其下的PCB。
图2是球侧管芯封装200的透视剖视图。在本实施例中,在印刷电路板94中切孔299,使相对较厚的芯片290(即芯片90的厚度接近或大于用于外部连接体93的焊料球293的直径)可以有扩展入孔299的厚度,这样允许外部连接体93合适地附着到PCB 94。在某些实施例中,例如对于连接到散热器或吹入空气来说,有助于通过孔的散热。PCB94通常在PCB内和PCB上的多个层中含有多个布线轨迹95。
在某些实施例中,可承受高电流的导体226(诸如,编织铜带或其他合适导体)通过连接体227(例如,拧入螺纹口的螺钉,或其他合适的连接体),并通过连接体225(例如,也是拧在螺纹口上的螺钉,或其他合适的连接体)附着到导热芯120。在某些实施例中,导体226携带用以接地或者接电源至芯片90的一些或全部电流。这对于用于高频(例如40千兆赫)处理器和其他逻辑或模拟电路的高电流(例如100安培)、低电压(例如1伏特)电源供应是重要的可选功能。在某些实施例中,使电气连接通过绝缘层110用于从导热芯120至焊料球91再到芯片90的多个连接。
图3是在附着散热器310和320的装置380上的球侧管芯封装300的透视剖视图。装置380包含PCB94,芯片封装300,以及一个或几个散热器310和/或320。同时也示出了包含第一芯片390和第二芯片391的多个芯片90。在某些实施例中,第一散热器310紧压着导热芯120(可在界面处使用散热化合物来改善热传导)的第二面122,并且第二散热器320紧压着一个或者多个芯片90(本这种情况中,是芯片390和391,任选地在界面处使用散热化合物来改善热传导)。在某些实施例中,一个或多个可紧和/或加载弹簧穿板紧固件330(例如螺钉331和螺帽332)用来相互连接散热器310和320和/或连接至PCB94。在其他实施例中,可使用其他合适方法和设备保持散热器。此外,外部连接体93(例如焊料球)将布线层92附着至PCB94。
图4是有用于外部连接体93的多个管脚493的外部连接侧封装400的剖视图。其他部件见图1的描述,诸如芯片90通过焊料球91(倒装芯片结构)连接至布线层92。布线层92由(在其中和/或其上的)绝缘层110保持,其中绝缘层110联结至导热芯120。
图5是包括有用于外部连接体93的焊盘593的外部连接侧管芯封装500的装置580的透视剖视图。在所示实施例中,PCB94包括多个加载弹簧的连接体598,每个连接体与相应焊盘593接触。其他部件见图1描述,例如芯片90通过焊料球91(倒装芯片结构)连接至布线层92。布线层92由(即,在其中和/或其上的)绝缘层110保持,绝缘层110联结至导热芯120。
图6,7A和8A所示为图1至图5使用的多个实施例的导热芯120的剖视图。
图6是有用于外部连接体93的焊料球的球侧管芯封装600的剖视图。在本实施例中,基片620包括由于其更好的匹配芯片90的CTE而选择的一片芯材料622,同时芯材料622至少一面镀有或粘有具有高导热和/或高导电性层(621和/或623)。在某些实施例中,芯片90主要是硅,且芯材料622包含铁镍合金,例如,含有大约42%(重量)镍(有时被称为N42合金)的合金或者大约含有36%(重量)镍(例如不胀钢(invar)合金)的合金,或含有Kovar(大约53%Fe,29%Ni,17%Co,1%其他物质)的合金,以匹配硅芯片90的CTE。硅的CTE在293度开尔文下为每度C约2.6~2.9×10-6。不胀钢(Invar)在-20~100℃下平均热膨胀系数(CTE)约为小于1.3×10-6℃-1。科瓦铁镍钴合金(Kovar)的平均CTE约为4.9×10-6℃-1。在某些实施例中,对于期望的工作温度范围,选择CTE与芯片90(例如,硅的)的CTE匹配的合金(例如Ni-Fe比率在不胀钢和N42铁镍比率之间的铁镍合金)。在某些实施例中,为了保持芯的CTE尺寸性质同时改善合成基片620的热性能和/或电性能,铜箔(或其他高导热和/或高导电性的箔)直接粘合在芯622底部和/或顶部。在某些实施例中,为了改善电源供应连接的导电性,同时改善导热性,从铜层621通过绝缘层110至焊料球91形成多个铜植入过孔650。在某些实施例中,为此类接触提供进一步附加的焊料球,其中这类焊料球不电气连接,而是主要改善从芯片90到铜层621的导热性。在某些实施例中,从铜层621经过绝缘层110至焊料球93形成一个或多个铜植入过孔651。在某些实施例中,上铜层623通过沿封装600基片620的整个外围植入或粘合的铜层与下铜层621相连。
图7A是球侧管芯封装700的剖视图。封装700包括基片720,该基片含有被位于顶部的薄铜层724和/或位于底部的薄铜层723以及侧部的固体铜外围721所包围的芯部分722。选择芯部分722的材料以改善与芯片90的CTE的CTE匹配。在某些实施例中,和图6的封装600相比,增加铜的量,就增加了导热性能。
在某些实施例中,铜基片开始时为大的片材(例如,约为200mm×300mm),粘合到布线层110,然后被切成独立的封装(例如100,600,700或800)。在某些实施例中,一个或多个芯片90在封装切割之前被附着到每个封装。在其他实施例中,封装在芯片被贴附之前被分割。
图7B是将被切割成多个球侧管芯封装700的片材701的顶视图。在本实施例中,芯材料722的各长方形小块嵌入铜片材701中,用于每个独立的封装700,并且图7A示出X和Y两个维度的剖视图。
图7C示出将被切割成多个球侧管芯封装700’的片材702的顶视图。在所示实施例中,对封装700’的每个列来说,芯材料722的条延伸片材702的长度,这样每个封装700’都具有在一个方向上延伸其长度的芯材料条。X方向上的截面如图7A所示,但是芯722在Y方向扩展的封装长度如图6所示。这就使封装702稍易制作,但稍稍降低其导热性。
图8A是球侧管芯封装800的剖视图。此封装与图7所示封装700等同,除了没有设置于芯822顶部或底部的铜层(诸如723或724),铜层是用来改善CTE使之与芯片90的相匹配。在某些实施例中,增加铜的量,和图6的封装600相比,就增加了导热性能。省去顶部和底部铜层使封装800稍易制作,但是与图7A所示封装700相比,减弱其导热性能。在某些实施例中,布线层810包括彼此隔开的多个布线层892和893,并通过绝缘层811和812与芯820相隔离。
图8B是将被切割成多个球侧管芯封装800的片材801的顶视图。在本实施例中,芯材料722的各长方形小块嵌入铜片材701中(但没有被如723或724那样的顶部和底部铜层所覆盖),用于每个单独封装700,并且图7A示出X和Y两个维度的剖视图。
图8C是将被切割成多个球侧管芯封装800’的片材802的顶视图。在所示实施例中,对于封装800’的每个列,芯材料822条扩展片材802的长度,这样每个封装800’都拥有在一个方向扩展其长度的芯材料条。X方向截面图如图8A所示,但芯822在Y方向上扩展封装长度并具有如图1所示的横截面。这使封装802稍易制作,但导热性稍差。
图9是实现本发明某些实施例所述方法的系统或机器900的示意图。此方法的功能可以任何合适的顺序实现,例如,在某些实施例中所示的顺序。本发明的某些实施例包括一种用于制作电子封装100的方法和相应装置900。在某些实施例中,各装置执行个别功能作为单个操作,而在其他实施例中,使用多个较小的机器,每一个完成一子操作。在某些实施例中,各种机器由自动传送系统相连,此系统由在各站间移动中间产物的传送带901示意性代表。所述方法包括提供(例如在传送带901上)导热芯120,并提供(例如在传送带902上)第一芯片90。装置910执行用布线层110(参见图1)覆盖金属芯90的第一面的功能,所述布线层110具有由绝缘层(例如图8中的811)使之与导热芯120分离的多个导电轨迹,其中布线层基本上比金属芯更薄。装置920执行成型和附着焊料球91和/或附着多个外部导体(例如焊料球)93到导热芯120上的布线层轨迹的功能。装置930执行用第一多个焊料球将第一芯片90附着至轨迹的功能。在某些实施例中,多个其他芯片90也被附着到布线层上。在某些实施例中,装置940执行切开独立封装100的功能。在某些实施例中,这些独立封装100随后由装置950测试并由装置960分类(例如,好器件与坏器件的分类,和/或快器件与慢器件的分类)。
本发明的一个实施例包括装置100,其包括含有第一主面和第二主面的导热金属芯,以及含有附着至第一面的电绝缘层的布线层,以及提供绝缘层而与金属芯分离的多个导电轨迹,其中金属芯基本上厚于布线层。装置100还包括通过球栅阵列焊料球附着到多个导电轨迹中的至少一些的第一电子芯片,和附着到轨迹的多个外部电连接体;其中金属芯第二面暴露在外。
在某些实施例中,金属芯的有效热膨胀系数(CTE)在与第一芯片临近的区域中比纯铜更好地匹配芯片的CTE。
在某些实施例中,金属芯包括含铁和镍的合金层。在某些此类的实施例中,铁镍合金层具有含附着到第二面上的铜的层。在某些此类的实施例中,铁镍合金层也具有含附着到第一面上的铜的层。
在某些实施例中,铁镍合金层的横向范围基本小于金属芯的横向范围。
在某些实施例中,金属芯电气连接至第一芯片。
在某些实施例中,金属芯电气连接至第一芯片的电源连接。
某些实施例进一步包括含有多个导电轨迹的印刷电路板(PCB),其中在第一面上的多个外部电气连接体电气连接至PCB的多个导电轨迹,且第一散热器与金属芯暴露在外的第二面热接触。
在某些此类的实施例中,PCB有相对于第一芯片的开口,该开口至少有第一芯片大小。某些此类实施例进一步包括通过此开口与第一芯片热接触的第二散热器。
某些实施例进一步包括通过球栅阵列焊料球附着到多个导电轨迹中的至少一些的第二电子芯片。
在某些实施例中,金属芯厚度约为800微米,布线层厚度约为40微米。
在某些实施例中,外部连接体包括多个焊料球,其中芯片厚度在其上形成电子线路后被薄化,以使此芯片的厚度小于外部导体焊料球的直径。
本发明的某些实施包括一种方法,方法包括提供导热金属芯和第一电子芯片,用具有通过绝缘层而与金属芯分离的多个导电轨迹的布线层覆盖金属芯的第一面,其中布线层基本薄于金属芯,用第一多个焊料球将第一芯片附着至轨迹,并将多个外部导体附着至轨迹。
在本方法的某些实施例中,多个外部导体包括第二多个焊料球,其中第二多个焊料球的平均直径大于第一多个焊料球的平均直径。
某些实施例进一步包括提供含有多个导电轨迹的印刷电路板(PCB),电气连接多个位于第一面上的外部电气连接体到PCB的多个导电轨迹,并使第一散热器与暴露的金属芯的第二个面热接触。
某些实施例进一步包括在PCB中提供一开口,并将一定厚度的第一芯片置入该开口。
某些实施例进一步包括电气连接芯片至金属芯。
在某些实施例中,提供金属芯包括至少在临近第一芯片的金属芯区域中提供基本小于铜的有效热膨胀系数。
在某些实施例中,提供金属芯包括提供含铁和镍的合金层。
某些实施例进一步包括在第二个面上用含有铜的层覆盖铁镍合金层。
某些实施例进一步包括限制铁镍合金层的横向范围基本小于金属芯的横向范围。
本发明的某些实施例包括一种装置,这种装置包含电子芯片90和上述附着至芯片90的用于传导热量至一附加散热设备的装置,其中导热装置包括用于更好地匹配芯片的热膨胀系数的装置。
在某些实施例中,用于导热的装置包括更好地匹配芯片热膨胀系数的装置。
某些实施例进一步包括与导热装置热接触的第一散热器310(见图3)。某些实施例进一步包括第二散热器320,它在与第一散热器相对的用于导热的装置的一侧上与芯片90热接触。
可以被理解的是,上述说明书意在描述,而非严格限制。通过上述描述,许多其他实施例对本领域普通技术人员是显而易见的。因此,本发明的范围应是由附上的权利要求书参考决定,随同的全部等价范围享有相同的权利。
Claims (25)
1.一种装置包括:
导热芯,它具有第一面和第二面,其中导热芯的第二面暴露在外;
布线层,它具有附着到第一面的电绝缘层,和通过绝缘层而与导热芯分离的多个导电轨迹,其中导热芯厚于布线层;
第一芯片,它使用球栅阵列焊料球附着到多个轨迹中的至少部分轨迹;和
多个外部电连接体,它被附着到所述轨迹,
其中导热芯包含合金层,所述合金层具有附着在第二面上的含铜的层。
2.如权利要求1所述的装置,其特征在于,导热芯的有效热扩张系数CTE在与第一芯片临近的区域比纯铜更好地与芯片的CTE相配。
3.如权利要求1所述的装置,其特征在于,所述合金层是包含铁和镍的合金层。
4.如权利要求3所述的装置,其特征在于,所述铁镍合金层也具有附着在第一面上的含铜的层。
5.如权利要求3所述的装置,其特征在于,铁镍合金层的横向范围小于导热芯的横向范围。
6.如权利要求1所述的装置,其特征在于,导热芯与第一芯片电气连接。
7.如权利要求1所述的装置,其特征在于,导热芯与第一芯片的电源接头电气连接。
8.如权利要求1所述的装置,进一步包括:
具有多个导电轨迹的印刷电路板PCB,其中第一面上的多个外部电气连接体与PCB上的多个导电轨迹电气相连;和
第一散热器,它与导热芯的暴露在外的第二面热接触。
9.如权利要求8所述的装置,其特征在于,PCB具有与第一芯片相对的开口,该开口至少有第一芯片大小。
10.如权利要求9所述的装置,进一步包括通过所述开口与第一芯片热接触的第二散热器。
11.如权利要求1所述的装置,进一步包括通过球栅阵列焊料球附着到多个轨迹中的至少部分轨迹的第二芯片。
12.如权利要求1所述的装置,其特征在于,导热芯厚度为800微米,布线层厚度为40微米。
13.如权利要求1所述的装置,其特征在于,外部导体包括多个焊料球,其中芯片厚度在其上的电路成型后被薄化,使之小于外部导体焊料球的直径。
14.一种方法,包括:
提供导热芯与第一芯片,其中所述导热芯具有第一面和第二面,第二面暴露在外;
用具有通过绝缘层而与导热芯分离的多个导电轨迹的布线层覆盖导热芯的第一面,其中布线层薄于导热芯;
用第一多个焊料球将第一芯片附着到所述轨迹;和
将多个外部导体附着到所述轨迹,
其中导热芯包括合金层,所述合金层具有附着在第二面上的含铜的层。
15.如权利要求14所述的方法,其特征在于,多个外部导体包括第二多个焊料球,其中第二多个焊料球的平均直径大于第一多个焊料球的平均直径。
16.如权利要求14所述的方法,进一步包括:
提供具有多个导电轨迹的印刷电路板PCB;
将第一面上的多个外部电气连接体电气连接至PCB的多个导电轨迹;和
使第一散热器与导热芯的暴露在外的第二面热接触。
17.如权利要求16所述的方法,进一步包括:
在PCB中提供开口;和
将一定厚度的第一芯片置于所述开口内。
18.如权利要求16所述的方法,进一步包括将芯片电气连接至导热芯。
19.如权利要求14所述的方法,其特征在于,提供导热芯包括至少在导热芯临近第一芯片的区域中提供小于铜的有效热膨胀系数。
20.如权利要求14所述的方法,其特征在于,所述合金层是包含铁和镍的合金层。
21.如权利要求20所述的方法,进一步包括限制铁镍合金层的横向范围小于导热芯的横向范围。
22.一种装置,包括:
芯片;和
附着到芯片的用于导热至所附散热装置的装置,其中导热装置包括用于更好地匹配芯片热膨胀系数的装置,该导热装置包括导热芯,具有第一面和第二面,其中导热芯的第二面暴露在外,导热芯包括合金层,所述合金层具有附着在第二面上的含铜的层。
23.如权利要求22所述的装置,其特征在于,用于导热的装置包括用于更好地匹配芯片热膨胀系数的装置。
24.如权利要求22所述的装置,进一步包括与用于导热的装置热接触的第一散热器。
25.如权利要求24所述的装置,进一步包括在与第一散热器相对的用于导热的装置的一侧上和芯片热接触的第二散热器。
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US10/382,680 US7268425B2 (en) | 2003-03-05 | 2003-03-05 | Thermally enhanced electronic flip-chip packaging with external-connector-side die and method |
US10/382,680 | 2003-03-05 |
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US (3) | US7268425B2 (zh) |
EP (1) | EP1604400A2 (zh) |
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WO2004079823A3 (en) | 2004-12-29 |
US20040173901A1 (en) | 2004-09-09 |
US20090079061A1 (en) | 2009-03-26 |
TWI313504B (en) | 2009-08-11 |
US7456047B2 (en) | 2008-11-25 |
WO2004079823A2 (en) | 2004-09-16 |
US7932596B2 (en) | 2011-04-26 |
CN1757109A (zh) | 2006-04-05 |
US7268425B2 (en) | 2007-09-11 |
EP1604400A2 (en) | 2005-12-14 |
US20070279873A1 (en) | 2007-12-06 |
TW200425439A (en) | 2004-11-16 |
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