CN100440556C - 半导体光发射装置以及一种装置 - Google Patents

半导体光发射装置以及一种装置 Download PDF

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Publication number
CN100440556C
CN100440556C CNB2006101592952A CN200610159295A CN100440556C CN 100440556 C CN100440556 C CN 100440556C CN B2006101592952 A CNB2006101592952 A CN B2006101592952A CN 200610159295 A CN200610159295 A CN 200610159295A CN 100440556 C CN100440556 C CN 100440556C
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region
regions
substrate
compound semiconductor
dislocation density
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CN1933203A (zh
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朝妻庸纪
冨谷茂隆
玉村好司
东条刚
后藤修
元木健作
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Sony Corp
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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    • H10H20/80—Constructional details
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    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
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    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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    • H01S5/00—Semiconductor lasers
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    • H01S5/00—Semiconductor lasers
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    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
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CNB2006101592952A 2001-10-12 2002-10-03 半导体光发射装置以及一种装置 Expired - Fee Related CN100440556C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP315703/01 2001-10-12
JP2001315703A JP4290358B2 (ja) 2001-10-12 2001-10-12 半導体発光素子の製造方法

Related Parent Applications (1)

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CN028221419A Division CN1582520B (zh) 2001-10-12 2002-10-03 半导体光发射装置的制造方法

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CN1933203A CN1933203A (zh) 2007-03-21
CN100440556C true CN100440556C (zh) 2008-12-03

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CNB2006101592952A Expired - Fee Related CN100440556C (zh) 2001-10-12 2002-10-03 半导体光发射装置以及一种装置
CNB2006101592971A Expired - Fee Related CN100440435C (zh) 2001-10-12 2002-10-03 半导体装置及其制造方法
CNB2006101592967A Expired - Fee Related CN100440557C (zh) 2001-10-12 2002-10-03 半导体光发射装置以及一种装置
CN028221419A Expired - Fee Related CN1582520B (zh) 2001-10-12 2002-10-03 半导体光发射装置的制造方法

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CNB2006101592971A Expired - Fee Related CN100440435C (zh) 2001-10-12 2002-10-03 半导体装置及其制造方法
CNB2006101592967A Expired - Fee Related CN100440557C (zh) 2001-10-12 2002-10-03 半导体光发射装置以及一种装置
CN028221419A Expired - Fee Related CN1582520B (zh) 2001-10-12 2002-10-03 半导体光发射装置的制造方法

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US (3) US7176499B2 (OSRAM)
EP (1) EP1441426B1 (OSRAM)
JP (1) JP4290358B2 (OSRAM)
KR (3) KR100893230B1 (OSRAM)
CN (4) CN100440556C (OSRAM)
CA (2) CA2463169C (OSRAM)
TW (1) TWI221688B (OSRAM)
WO (1) WO2003034560A1 (OSRAM)

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JP4443097B2 (ja) * 2002-06-20 2010-03-31 ソニー株式会社 ＧａＮ系半導体素子の作製方法
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JP5010096B2 (ja) * 2003-07-10 2012-08-29 日亜化学工業株式会社 窒化物半導体レーザ素子及びそれを用いたｌｄ装置
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US7622318B2 (en) 2004-03-30 2009-11-24 Sony Corporation Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
JP3833674B2 (ja) 2004-06-08 2006-10-18 松下電器産業株式会社 窒化物半導体レーザ素子
JP2006128558A (ja) 2004-11-01 2006-05-18 Sony Corp 半導体レーザ、半導体レーザの実装方法、半導体レーザ実装構造体および光ディスク装置
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JP4617907B2 (ja) 2005-02-03 2011-01-26 ソニー株式会社 光集積型半導体発光素子
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KR20060127743A (ko) * 2005-06-06 2006-12-13 스미토모덴키고교가부시키가이샤 질화물 반도체 기판과 그 제조 방법
JP4656410B2 (ja) 2005-09-05 2011-03-23 住友電気工業株式会社 窒化物半導体デバイスの製造方法
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JP5061473B2 (ja) * 2006-02-24 2012-10-31 住友電気工業株式会社 窒化物系半導体装置
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