CN100433379C - 半导体发光元件及其制造方法 - Google Patents

半导体发光元件及其制造方法 Download PDF

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Publication number
CN100433379C
CN100433379C CNB2005100529092A CN200510052909A CN100433379C CN 100433379 C CN100433379 C CN 100433379C CN B2005100529092 A CNB2005100529092 A CN B2005100529092A CN 200510052909 A CN200510052909 A CN 200510052909A CN 100433379 C CN100433379 C CN 100433379C
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China
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layer
main surface
light
ohmic contact
semiconductor
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Expired - Fee Related
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CNB2005100529092A
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English (en)
Chinese (zh)
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CN1661826A (zh
Inventor
田岛未来雄
佐藤雅裕
青柳秀和
松尾哲二
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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CNB2005100529092A 2004-02-25 2005-02-25 半导体发光元件及其制造方法 Expired - Fee Related CN100433379C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2004050378 2004-02-25
JP50378/04 2004-02-25
JP50378/2004 2004-02-25
JP2004264342A JP2005277372A (ja) 2004-02-25 2004-09-10 半導体発光素子及びその製造方法
JP264342/04 2004-09-10
JP264342/2004 2004-09-10

Publications (2)

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CN1661826A CN1661826A (zh) 2005-08-31
CN100433379C true CN100433379C (zh) 2008-11-12

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US (1) US7199401B2 (enExample)
JP (1) JP2005277372A (enExample)
CN (1) CN100433379C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393140A (zh) * 2014-11-06 2015-03-04 中国科学院半导体研究所 一种高反射率的垂直结构发光二级管芯片及其制备方法

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4960665B2 (ja) * 2006-08-11 2012-06-27 キヤノン株式会社 発光素子アレイ及び画像形成装置
US7180099B2 (en) 2002-11-11 2007-02-20 Oki Data Corporation Semiconductor apparatus with thin semiconductor film
US20080121918A1 (en) * 2006-11-15 2008-05-29 The Regents Of The University Of California High light extraction efficiency sphere led
CN100375303C (zh) * 2005-10-27 2008-03-12 晶能光电（江西）有限公司 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法
CN100388515C (zh) * 2005-09-30 2008-05-14 晶能光电（江西）有限公司 半导体发光器件及其制造方法
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
US8729580B2 (en) * 2005-12-06 2014-05-20 Toshiba Techno Center, Inc. Light emitter with metal-oxide coating
KR100845037B1 (ko) * 2006-08-02 2008-07-09 포항공과대학교 산학협력단 오믹 전극 및 그 형성 방법, 이를 구비하는 반도체 발광소자
US7439548B2 (en) * 2006-08-11 2008-10-21 Bridgelux, Inc Surface mountable chip
JP4967580B2 (ja) * 2006-10-11 2012-07-04 サンケン電気株式会社 半導体発光素子及びその製造方法
TW200830593A (en) * 2006-11-15 2008-07-16 Univ California Transparent mirrorless light emitting diode
EP2843716A3 (en) 2006-11-15 2015-04-29 The Regents of The University of California Textured phosphor conversion layer light emitting diode
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
TW201448263A (zh) 2006-12-11 2014-12-16 美國加利福尼亞大學董事會 透明發光二極體
TWI452716B (zh) * 2007-06-08 2014-09-11 Formosa Epitaxy Inc Gallium nitride based light emitting diode and manufacturing method thereof
JP2009004625A (ja) 2007-06-22 2009-01-08 Sanken Electric Co Ltd 半導体発光装置
GB0717802D0 (en) * 2007-09-12 2007-10-24 Photonstar Led Ltd Electrically isolated vertical light emitting diode structure
JP5224859B2 (ja) * 2008-03-19 2013-07-03 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
WO2009120044A2 (ko) * 2008-03-27 2009-10-01 Song June O 발광소자 및 그 제조방법
US7791101B2 (en) * 2008-03-28 2010-09-07 Cree, Inc. Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
EP2302705B1 (en) * 2008-06-02 2018-03-14 LG Innotek Co., Ltd. Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same
TWI373153B (en) * 2008-09-22 2012-09-21 Ind Tech Res Inst Light emitting diode, and package structure and manufacturing method therefor
KR101064082B1 (ko) 2009-01-21 2011-09-08 엘지이노텍 주식회사 발광 소자
WO2010087851A1 (en) 2009-01-30 2010-08-05 Hewlett-Packard Development Company, L.P. Plasmonic light emitting diode
KR101550922B1 (ko) * 2009-03-10 2015-09-07 엘지이노텍 주식회사 발광 소자
US8207547B2 (en) 2009-06-10 2012-06-26 Brudgelux, Inc. Thin-film LED with P and N contacts electrically isolated from the substrate
FR2961948B1 (fr) * 2010-06-23 2012-08-03 Soitec Silicon On Insulator Procede de traitement d'une piece en materiau compose
KR101125025B1 (ko) * 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR20120032305A (ko) * 2010-09-28 2012-04-05 삼성엘이디 주식회사 반도체 발광다이오드 칩, 그 제조방법 및 품질관리방법
KR101020996B1 (ko) 2010-10-14 2011-03-09 (주)더리즈 반도체 발광소자 제조방법
KR20120044036A (ko) * 2010-10-27 2012-05-07 엘지이노텍 주식회사 발광소자
KR101694175B1 (ko) * 2010-10-29 2017-01-17 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 조명시스템
CN102610705A (zh) * 2011-01-24 2012-07-25 鸿富锦精密工业（深圳）有限公司 氮化镓基板的制作方法
US8802461B2 (en) 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
CN103094430B (zh) * 2013-02-20 2015-06-17 佛山市国星半导体技术有限公司 一种发光结构
WO2015053595A1 (ko) * 2013-10-11 2015-04-16 주식회사 세미콘라이트 반도체 발광소자
DE102013112549B4 (de) 2013-11-14 2021-08-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
KR102529980B1 (ko) * 2014-11-06 2023-05-08 루미리즈 홀딩 비.브이. 상부 접점 아래에 트렌치를 갖는 발광 디바이스
US9673368B2 (en) 2015-05-11 2017-06-06 Lg Innotek Co., Ltd. Light emitting device having first and second electrodes on one side of a light emitting structure
US20170350752A1 (en) * 2016-06-01 2017-12-07 Ventsislav Metodiev Lavchiev Light emitting structures and systems on the basis of group iv material(s) for the ultraviolet and visible spectral ranges
US10804438B2 (en) * 2017-10-18 2020-10-13 Rohm Co., Ltd. Semiconductor light-emitting device
DE102018103169A1 (de) * 2018-02-13 2019-08-14 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Halbleiterbauelement
CN109509821B (zh) * 2018-11-14 2024-02-20 佛山市国星半导体技术有限公司 一种抗大电流冲击的led芯片及其制作方法
US11145689B2 (en) * 2018-11-29 2021-10-12 Creeled, Inc. Indicia for light emitting diode chips
CN109768137B (zh) * 2018-12-29 2022-06-14 晶能光电（江西）有限公司 垂直结构led芯片及其制备方法
CN109994578B (zh) * 2019-01-09 2020-12-11 南京邮电大学 垂直结构蓝光发光二极管及其制备方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN112447889A (zh) * 2020-11-27 2021-03-05 广东省科学院半导体研究所 一种led芯片及其制作方法
JP7369761B2 (ja) * 2021-12-24 2023-10-26 日東電工株式会社 光半導体素子封止用シート

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001047038A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for light-emitting semiconductor devices
CN1330416A (zh) * 2000-06-30 2002-01-09 株式会社东芝 半导体发光元件及其制造方法以及半导体发光装置
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
US20030164503A1 (en) * 2002-03-04 2003-09-04 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
CN1449060A (zh) * 2002-04-04 2003-10-15 国联光电科技股份有限公司 发光二极管的结构及其制造方法
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3985283B2 (ja) * 1997-01-22 2007-10-03 ソニー株式会社 発光素子
JPH114020A (ja) 1997-04-15 1999-01-06 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光装置
JP2002217450A (ja) 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP4122785B2 (ja) 2002-01-30 2008-07-23 日亜化学工業株式会社 発光素子
KR100476567B1 (ko) * 2003-09-26 2005-03-17 삼성전기주식회사 질화물 반도체 소자

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
WO2001047038A1 (en) * 1999-12-22 2001-06-28 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for light-emitting semiconductor devices
CN1330416A (zh) * 2000-06-30 2002-01-09 株式会社东芝 半导体发光元件及其制造方法以及半导体发光装置
US20030164503A1 (en) * 2002-03-04 2003-09-04 United Epitaxy Co., Ltd. High efficiency light emitting diode and method of making the same
CN1449060A (zh) * 2002-04-04 2003-10-15 国联光电科技股份有限公司 发光二极管的结构及其制造方法
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104393140A (zh) * 2014-11-06 2015-03-04 中国科学院半导体研究所 一种高反射率的垂直结构发光二级管芯片及其制备方法
CN104393140B (zh) * 2014-11-06 2018-03-23 中国科学院半导体研究所 一种高反射率的垂直结构发光二级管芯片及其制备方法

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US20050184300A1 (en) 2005-08-25
CN1661826A (zh) 2005-08-31
US7199401B2 (en) 2007-04-03
JP2005277372A (ja) 2005-10-06

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