JP2005277372A - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JP2005277372A
JP2005277372A JP2004264342A JP2004264342A JP2005277372A JP 2005277372 A JP2005277372 A JP 2005277372A JP 2004264342 A JP2004264342 A JP 2004264342A JP 2004264342 A JP2004264342 A JP 2004264342A JP 2005277372 A JP2005277372 A JP 2005277372A
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Japan
Prior art keywords
layer
semiconductor
main surface
ohmic contact
light
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Pending
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JP2004264342A
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English (en)
Japanese (ja)
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JP2005277372A5 (enExample
Inventor
Mikio Tajima
未来雄 田嶋
Hidekazu Aoyanagi
秀和 青柳
Masahiro Sato
雅裕 佐藤
Tetsuji Matsuo
哲二 松尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
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Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2004264342A priority Critical patent/JP2005277372A/ja
Priority to US11/058,942 priority patent/US7199401B2/en
Priority to CNB2005100529092A priority patent/CN100433379C/zh
Publication of JP2005277372A publication Critical patent/JP2005277372A/ja
Publication of JP2005277372A5 publication Critical patent/JP2005277372A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors

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  • Led Devices (AREA)
JP2004264342A 2004-02-25 2004-09-10 半導体発光素子及びその製造方法 Pending JP2005277372A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004264342A JP2005277372A (ja) 2004-02-25 2004-09-10 半導体発光素子及びその製造方法
US11/058,942 US7199401B2 (en) 2004-02-25 2005-02-16 Light-emitting semiconductor device
CNB2005100529092A CN100433379C (zh) 2004-02-25 2005-02-25 半导体发光元件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004050378 2004-02-25
JP2004264342A JP2005277372A (ja) 2004-02-25 2004-09-10 半導体発光素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2005277372A true JP2005277372A (ja) 2005-10-06
JP2005277372A5 JP2005277372A5 (enExample) 2005-11-17

Family

ID=34863533

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004264342A Pending JP2005277372A (ja) 2004-02-25 2004-09-10 半導体発光素子及びその製造方法

Country Status (3)

Country Link
US (1) US7199401B2 (enExample)
JP (1) JP2005277372A (enExample)
CN (1) CN100433379C (enExample)

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JP2008047618A (ja) * 2006-08-11 2008-02-28 Canon Inc 発光素子アレイ及び画像形成装置
JP2008098347A (ja) * 2006-10-11 2008-04-24 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP2009231323A (ja) * 2008-03-19 2009-10-08 Dowa Electronics Materials Co Ltd 半導体発光素子およびその製造方法
JP2010500780A (ja) * 2006-08-11 2010-01-07 ブリッジラックス・インク 表面実装チップ
KR101020996B1 (ko) 2010-10-14 2011-03-09 (주)더리즈 반도체 발광소자 제조방법
US8115224B2 (en) 2009-01-21 2012-02-14 Lg Innotek Co., Ltd. Light emitting device
US8120049B2 (en) 2007-06-22 2012-02-21 Sanken Electric Co., Ltd. Light-emitting semiconductor device
JP2012529772A (ja) * 2009-06-10 2012-11-22 ブリッジラックス インコーポレイテッド 基板から電気的に絶縁されたｐ型およびｎ型のコンタクトをもつ薄膜ＬＥＤ
JP2013070111A (ja) * 2008-06-02 2013-04-18 Lg Innotek Co Ltd 半導体発光素子
JP2017534185A (ja) * 2014-11-06 2017-11-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 頂部コンタクトの下方にトレンチを有する発光デバイス
CN109686829A (zh) * 2017-10-18 2019-04-26 罗姆股份有限公司 半导体发光器件
JP2022516669A (ja) * 2019-01-09 2022-03-01 南京郵電大学 垂直構造の青光発光ダイオード及びその製造方法
US11557691B2 (en) * 2018-02-13 2023-01-17 Osram Oled Gmbh Method of manufacturing a semiconductor device and semiconductor device
US11881544B2 (en) 2013-11-14 2024-01-23 Osram Oled Gmbh Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device

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US7180099B2 (en) 2002-11-11 2007-02-20 Oki Data Corporation Semiconductor apparatus with thin semiconductor film
US20080121918A1 (en) * 2006-11-15 2008-05-29 The Regents Of The University Of California High light extraction efficiency sphere led
CN100375303C (zh) * 2005-10-27 2008-03-12 晶能光电（江西）有限公司 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法
CN100388515C (zh) * 2005-09-30 2008-05-14 晶能光电（江西）有限公司 半导体发光器件及其制造方法
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
US8729580B2 (en) * 2005-12-06 2014-05-20 Toshiba Techno Center, Inc. Light emitter with metal-oxide coating
KR100845037B1 (ko) * 2006-08-02 2008-07-09 포항공과대학교 산학협력단 오믹 전극 및 그 형성 방법, 이를 구비하는 반도체 발광소자
TW200830593A (en) * 2006-11-15 2008-07-16 Univ California Transparent mirrorless light emitting diode
EP2843716A3 (en) 2006-11-15 2015-04-29 The Regents of The University of California Textured phosphor conversion layer light emitting diode
US20090121250A1 (en) * 2006-11-15 2009-05-14 Denbaars Steven P High light extraction efficiency light emitting diode (led) using glass packaging
TW201448263A (zh) 2006-12-11 2014-12-16 美國加利福尼亞大學董事會 透明發光二極體
TWI452716B (zh) * 2007-06-08 2014-09-11 Formosa Epitaxy Inc Gallium nitride based light emitting diode and manufacturing method thereof
GB0717802D0 (en) * 2007-09-12 2007-10-24 Photonstar Led Ltd Electrically isolated vertical light emitting diode structure
WO2009120044A2 (ko) * 2008-03-27 2009-10-01 Song June O 발광소자 및 그 제조방법
US7791101B2 (en) * 2008-03-28 2010-09-07 Cree, Inc. Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
TWI373153B (en) * 2008-09-22 2012-09-21 Ind Tech Res Inst Light emitting diode, and package structure and manufacturing method therefor
WO2010087851A1 (en) 2009-01-30 2010-08-05 Hewlett-Packard Development Company, L.P. Plasmonic light emitting diode
KR101550922B1 (ko) * 2009-03-10 2015-09-07 엘지이노텍 주식회사 발광 소자
FR2961948B1 (fr) * 2010-06-23 2012-08-03 Soitec Silicon On Insulator Procede de traitement d'une piece en materiau compose
KR101125025B1 (ko) * 2010-07-23 2012-03-27 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR20120032305A (ko) * 2010-09-28 2012-04-05 삼성엘이디 주식회사 반도체 발광다이오드 칩, 그 제조방법 및 품질관리방법
KR20120044036A (ko) * 2010-10-27 2012-05-07 엘지이노텍 주식회사 발광소자
KR101694175B1 (ko) * 2010-10-29 2017-01-17 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 조명시스템
CN102610705A (zh) * 2011-01-24 2012-07-25 鸿富锦精密工业（深圳）有限公司 氮化镓基板的制作方法
US8802461B2 (en) 2011-03-22 2014-08-12 Micron Technology, Inc. Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
CN103094430B (zh) * 2013-02-20 2015-06-17 佛山市国星半导体技术有限公司 一种发光结构
WO2015053595A1 (ko) * 2013-10-11 2015-04-16 주식회사 세미콘라이트 반도체 발광소자
CN104393140B (zh) * 2014-11-06 2018-03-23 中国科学院半导体研究所 一种高反射率的垂直结构发光二级管芯片及其制备方法
US9673368B2 (en) 2015-05-11 2017-06-06 Lg Innotek Co., Ltd. Light emitting device having first and second electrodes on one side of a light emitting structure
US20170350752A1 (en) * 2016-06-01 2017-12-07 Ventsislav Metodiev Lavchiev Light emitting structures and systems on the basis of group iv material(s) for the ultraviolet and visible spectral ranges
CN109509821B (zh) * 2018-11-14 2024-02-20 佛山市国星半导体技术有限公司 一种抗大电流冲击的led芯片及其制作方法
US11145689B2 (en) * 2018-11-29 2021-10-12 Creeled, Inc. Indicia for light emitting diode chips
CN109768137B (zh) * 2018-12-29 2022-06-14 晶能光电（江西）有限公司 垂直结构led芯片及其制备方法
US11592166B2 (en) 2020-05-12 2023-02-28 Feit Electric Company, Inc. Light emitting device having improved illumination and manufacturing flexibility
US11876042B2 (en) 2020-08-03 2024-01-16 Feit Electric Company, Inc. Omnidirectional flexible light emitting device
CN112447889A (zh) * 2020-11-27 2021-03-05 广东省科学院半导体研究所 一种led芯片及其制作方法
JP7369761B2 (ja) * 2021-12-24 2023-10-26 日東電工株式会社 光半導体素子封止用シート

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JP3985283B2 (ja) * 1997-01-22 2007-10-03 ソニー株式会社 発光素子
JPH114020A (ja) 1997-04-15 1999-01-06 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光装置
US6492661B1 (en) * 1999-11-04 2002-12-10 Fen-Ren Chien Light emitting semiconductor device having reflection layer structure
US6992334B1 (en) * 1999-12-22 2006-01-31 Lumileds Lighting U.S., Llc Multi-layer highly reflective ohmic contacts for semiconductor devices
JP4024994B2 (ja) * 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
JP2002217450A (ja) 2001-01-22 2002-08-02 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
JP4122785B2 (ja) 2002-01-30 2008-07-23 日亜化学工業株式会社 発光素子
TW577178B (en) * 2002-03-04 2004-02-21 United Epitaxy Co Ltd High efficient reflective metal layer of light emitting diode
CN1198339C (zh) * 2002-04-04 2005-04-20 国联光电科技股份有限公司 发光二极管的结构及其制造方法
US6649437B1 (en) * 2002-08-20 2003-11-18 United Epitaxy Company, Ltd. Method of manufacturing high-power light emitting diodes
KR100476567B1 (ko) * 2003-09-26 2005-03-17 삼성전기주식회사 질화물 반도체 소자

Cited By (17)

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JP2010500780A (ja) * 2006-08-11 2010-01-07 ブリッジラックス・インク 表面実装チップ
JP2008047618A (ja) * 2006-08-11 2008-02-28 Canon Inc 発光素子アレイ及び画像形成装置
JP2008098347A (ja) * 2006-10-11 2008-04-24 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US8120049B2 (en) 2007-06-22 2012-02-21 Sanken Electric Co., Ltd. Light-emitting semiconductor device
JP2009231323A (ja) * 2008-03-19 2009-10-08 Dowa Electronics Materials Co Ltd 半導体発光素子およびその製造方法
US9224910B2 (en) 2008-06-02 2015-12-29 Lg Innotek Co., Ltd. Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
JP2013070111A (ja) * 2008-06-02 2013-04-18 Lg Innotek Co Ltd 半導体発光素子
US8877530B2 (en) 2008-06-02 2014-11-04 Lg Innotek Co., Ltd. Supporting substrate for preparing semiconductor light-emitting device and semiconductor light-emitting device using supporting substrates
US8115224B2 (en) 2009-01-21 2012-02-14 Lg Innotek Co., Ltd. Light emitting device
JP2012529772A (ja) * 2009-06-10 2012-11-22 ブリッジラックス インコーポレイテッド 基板から電気的に絶縁されたｐ型およびｎ型のコンタクトをもつ薄膜ＬＥＤ
US8871539B2 (en) 2009-06-10 2014-10-28 Kabushiki Kaisha Toshiba Thin-film LED with P and N contacts electrically isolated from the substrate
KR101020996B1 (ko) 2010-10-14 2011-03-09 (주)더리즈 반도체 발광소자 제조방법
US11881544B2 (en) 2013-11-14 2024-01-23 Osram Oled Gmbh Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
JP2017534185A (ja) * 2014-11-06 2017-11-16 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 頂部コンタクトの下方にトレンチを有する発光デバイス
CN109686829A (zh) * 2017-10-18 2019-04-26 罗姆股份有限公司 半导体发光器件
US11557691B2 (en) * 2018-02-13 2023-01-17 Osram Oled Gmbh Method of manufacturing a semiconductor device and semiconductor device
JP2022516669A (ja) * 2019-01-09 2022-03-01 南京郵電大学 垂直構造の青光発光ダイオード及びその製造方法

Also Published As

Publication number Publication date
US20050184300A1 (en) 2005-08-25
CN1661826A (zh) 2005-08-31
US7199401B2 (en) 2007-04-03
CN100433379C (zh) 2008-11-12

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