CN1198339C - 发光二极管的结构及其制造方法 - Google Patents
发光二极管的结构及其制造方法 Download PDFInfo
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- CN1198339C CN1198339C CNB021061327A CN02106132A CN1198339C CN 1198339 C CN1198339 C CN 1198339C CN B021061327 A CNB021061327 A CN B021061327A CN 02106132 A CN02106132 A CN 02106132A CN 1198339 C CN1198339 C CN 1198339C
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- layer
- light
- emitting diode
- metal layer
- substrate
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CNB021061327A CN1198339C (zh) | 2002-04-04 | 2002-04-04 | 发光二极管的结构及其制造方法 |
Applications Claiming Priority (1)
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CNB021061327A CN1198339C (zh) | 2002-04-04 | 2002-04-04 | 发光二极管的结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN1449060A CN1449060A (zh) | 2003-10-15 |
CN1198339C true CN1198339C (zh) | 2005-04-20 |
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CNB021061327A Expired - Lifetime CN1198339C (zh) | 2002-04-04 | 2002-04-04 | 发光二极管的结构及其制造方法 |
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CN (1) | CN1198339C (zh) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005277372A (ja) * | 2004-02-25 | 2005-10-06 | Sanken Electric Co Ltd | 半導体発光素子及びその製造方法 |
US7355284B2 (en) * | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
CN100350643C (zh) * | 2004-03-29 | 2007-11-21 | 晶元光电股份有限公司 | 具有欧姆金属凸块的有机粘结发光元件 |
JP2006082260A (ja) | 2004-09-14 | 2006-03-30 | Oki Data Corp | 半導体複合装置、半導体複合装置の製造方法、半導体複合装置を使用したledヘッド及びこのledヘッドを用いた画像形成装置 |
CN100435360C (zh) * | 2004-12-27 | 2008-11-19 | 北京大学 | 带有二维自然散射出光面的led芯片的制备方法 |
CN100379042C (zh) * | 2005-02-18 | 2008-04-02 | 乐清市亿昊科技发展有限公司 | 发光二极管管芯的基底结构体及制造基底结构体的方法 |
CN100380695C (zh) * | 2005-03-03 | 2008-04-09 | 乐清市亿昊科技发展有限公司 | 发光二极管管芯及其制造方法 |
CN100355098C (zh) * | 2005-04-12 | 2007-12-12 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
CN100394624C (zh) * | 2006-06-16 | 2008-06-11 | 光磊科技股份有限公司 | 发光二极管的结构及其制造方法 |
CN101931034B (zh) * | 2009-06-22 | 2013-06-19 | 晶元光电股份有限公司 | 光电元件 |
CN102201426B (zh) * | 2010-03-23 | 2016-05-04 | 展晶科技(深圳)有限公司 | 发光二极管及其制作方法 |
JP5949294B2 (ja) * | 2011-08-31 | 2016-07-06 | 日亜化学工業株式会社 | 半導体発光素子 |
TW201322489A (zh) * | 2011-11-29 | 2013-06-01 | Genesis Photonics Inc | 發光二極體元件及覆晶式發光二極體封裝元件 |
TWI527263B (zh) | 2013-07-17 | 2016-03-21 | 新世紀光電股份有限公司 | 發光二極體結構 |
CN108538984B (zh) * | 2013-08-01 | 2020-10-09 | 新世纪光电股份有限公司 | 发光二极管结构 |
CN104112805B (zh) * | 2014-07-16 | 2017-09-26 | 厦门乾照光电股份有限公司 | 一种具有防扩层的发光二极管及其制造方法 |
CN116825925A (zh) * | 2018-12-24 | 2023-09-29 | 泉州三安半导体科技有限公司 | 一种发光二极管及其制作方法 |
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2002
- 2002-04-04 CN CNB021061327A patent/CN1198339C/zh not_active Expired - Lifetime
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Publication number | Publication date |
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CN1449060A (zh) | 2003-10-15 |
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Owner name: JINGYUAN PHOTOELECTRIC CO., LTD. Free format text: FORMER OWNER: GUOLIAN PHOTOELECTRIC SCIENCE AND TECHNOLOGY CO LTD Effective date: 20060324 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Effective date of registration: 20060324 Address after: Hsinchu Science Industrial Park, Taiwan Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Hsinchu Science Park, Taiwan Patentee before: Guolian Photoelectric Science and Technology Co., Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20050420 |
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CX01 | Expiry of patent term |