CN1905224A - 通孔垂直结构的半导体芯片或器件 - Google Patents
通孔垂直结构的半导体芯片或器件 Download PDFInfo
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- CN1905224A CN1905224A CNA2006100890615A CN200610089061A CN1905224A CN 1905224 A CN1905224 A CN 1905224A CN A2006100890615 A CNA2006100890615 A CN A2006100890615A CN 200610089061 A CN200610089061 A CN 200610089061A CN 1905224 A CN1905224 A CN 1905224A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 134
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- 239000002184 metal Substances 0.000 claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 61
- 239000010703 silicon Substances 0.000 claims abstract description 61
- 238000009792 diffusion process Methods 0.000 claims abstract description 26
- 239000010410 layer Substances 0.000 claims description 114
- 238000001465 metallisation Methods 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 45
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 28
- 229910052733 gallium Inorganic materials 0.000 claims description 28
- 229910005540 GaP Inorganic materials 0.000 claims description 26
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 239000011241 protective layer Substances 0.000 claims description 19
- 239000011701 zinc Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- YUWBVKYVJWNVLE-UHFFFAOYSA-N [N].[P] Chemical compound [N].[P] YUWBVKYVJWNVLE-UHFFFAOYSA-N 0.000 claims description 16
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 15
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000004411 aluminium Substances 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910002056 binary alloy Inorganic materials 0.000 claims description 12
- 229910052738 indium Inorganic materials 0.000 claims description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 12
- 229910002059 quaternary alloy Inorganic materials 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 11
- 239000011787 zinc oxide Substances 0.000 claims description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000011574 phosphorus Substances 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- 239000002096 quantum dot Substances 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 82
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 26
- 229940044658 gallium nitrate Drugs 0.000 description 13
- 239000010931 gold Substances 0.000 description 12
- 229910052737 gold Inorganic materials 0.000 description 10
- 241000218202 Coptis Species 0.000 description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 description 8
- -1 for example Inorganic materials 0.000 description 8
- 238000013517 stratification Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000005457 optimization Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 230000032683 aging Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910007486 ZnGa2O4 Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100890615A CN100446288C (zh) | 2006-08-01 | 2006-08-01 | 通孔垂直结构的半导体芯片及其制造方法 |
US11/881,872 US20080029761A1 (en) | 2006-08-01 | 2007-07-30 | Through-hole vertical semiconductor devices or chips |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2006100890615A CN100446288C (zh) | 2006-08-01 | 2006-08-01 | 通孔垂直结构的半导体芯片及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1905224A true CN1905224A (zh) | 2007-01-31 |
CN100446288C CN100446288C (zh) | 2008-12-24 |
Family
ID=37674418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100890615A Expired - Fee Related CN100446288C (zh) | 2006-08-01 | 2006-08-01 | 通孔垂直结构的半导体芯片及其制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20080029761A1 (zh) |
CN (1) | CN100446288C (zh) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008131743A1 (de) * | 2007-04-26 | 2008-11-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement |
CN102214764A (zh) * | 2010-04-12 | 2011-10-12 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明系统 |
CN102769086A (zh) * | 2012-07-09 | 2012-11-07 | 上海大学 | 基于硅基板通孔技术倒装芯片的发光二极管及其制造工艺 |
WO2013010389A1 (zh) * | 2011-07-15 | 2013-01-24 | 中国科学院半导体研究所 | 发光二极管封装结构及其制造方法 |
US8476644B2 (en) | 2007-04-26 | 2013-07-02 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the manufacture of a plurality of optoelectronic components |
CN104737314A (zh) * | 2012-08-31 | 2015-06-24 | 奥斯兰姆奥普托半导体有限责任公司 | 光电子半导体构件 |
CN105593991A (zh) * | 2013-10-01 | 2016-05-18 | 欧司朗光电半导体有限公司 | 发射辐射的半导体芯片和用于制造发射辐射的半导体芯片的方法 |
CN106098678A (zh) * | 2016-06-16 | 2016-11-09 | 厦门乾照光电股份有限公司 | 一种增加演色性的白光led结构 |
CN106252483A (zh) * | 2011-04-15 | 2016-12-21 | 晶元光电股份有限公司 | 发光装置 |
CN106981563A (zh) * | 2017-05-16 | 2017-07-25 | 广东工业大学 | 一种功率型紫外led器件 |
CN104064641B (zh) * | 2014-07-04 | 2018-04-27 | 映瑞光电科技(上海)有限公司 | 通孔垂直型led的制作方法 |
CN110707203A (zh) * | 2019-09-04 | 2020-01-17 | 厦门三安光电有限公司 | 发光器件及其制作方法和含该发光器件的发光器件模组 |
CN112635630A (zh) * | 2020-12-31 | 2021-04-09 | 深圳第三代半导体研究院 | 一种发光二极管及其制造方法 |
CN112670391A (zh) * | 2020-12-31 | 2021-04-16 | 深圳第三代半导体研究院 | 一种发光二极管及其制造方法 |
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DE102009022966A1 (de) * | 2009-05-28 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbarer optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Halbleiterchips |
WO2011010436A1 (ja) | 2009-07-22 | 2011-01-27 | パナソニック株式会社 | 発光ダイオード |
WO2011040703A2 (ko) * | 2009-09-30 | 2011-04-07 | 주식회사 세미콘라이트 | 반도체 발광소자 |
DE102009053064A1 (de) * | 2009-11-13 | 2011-05-19 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement mit Schutzdiodenstruktur und Verfahren zur Herstellung eines Dünnfilm-Halbleiterbauelements |
WO2011073886A1 (en) * | 2009-12-18 | 2011-06-23 | Koninklijke Philips Electronics N.V. | Substrate for a semiconductor light emitting device |
US20110198609A1 (en) * | 2010-02-12 | 2011-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Light-Emitting Devices with Through-Substrate Via Connections |
KR100999784B1 (ko) * | 2010-02-23 | 2010-12-08 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
TWI466325B (zh) * | 2010-06-25 | 2014-12-21 | Toyoda Gosei Kk | Semiconductor light emitting element |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
JP5777879B2 (ja) | 2010-12-27 | 2015-09-09 | ローム株式会社 | 発光素子、発光素子ユニットおよび発光素子パッケージ |
CN102593113B (zh) * | 2011-01-10 | 2015-04-01 | 展晶科技(深圳)有限公司 | 发光二极管封装结构 |
CN102593287B (zh) * | 2011-01-10 | 2015-07-08 | 展晶科技(深圳)有限公司 | 发光二极管晶粒及其制造方法、发光二极管封装结构 |
CN102593302B (zh) * | 2011-01-10 | 2014-10-15 | 展晶科技(深圳)有限公司 | 发光二极管封装结构及其制造方法 |
CN103582958B (zh) * | 2011-06-01 | 2018-09-07 | 亮锐控股有限公司 | 将发光器件附着到支撑衬底的方法 |
WO2013050898A1 (en) * | 2011-10-07 | 2013-04-11 | Koninklijke Philips Electronics N.V. | Electrically insulating bond for mounting a light emitting device |
WO2013057668A1 (en) * | 2011-10-19 | 2013-04-25 | Koninklijke Philips Electronics N.V. | Led wafer bonded to carrier wafer for wafer level processing |
US8569856B2 (en) * | 2011-11-03 | 2013-10-29 | Omnivision Technologies, Inc. | Pad design for circuit under pad in semiconductor devices |
WO2013187723A1 (ko) * | 2012-06-14 | 2013-12-19 | An Sang Jeong | 반도체 발광소자 및 이의 제조 방법 |
WO2014024108A1 (en) * | 2012-08-07 | 2014-02-13 | Koninklijke Philips N.V. | Led package and manufacturing method |
KR101886156B1 (ko) * | 2012-08-21 | 2018-09-11 | 엘지이노텍 주식회사 | 발광소자 |
WO2014049154A2 (de) | 2012-09-27 | 2014-04-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement mit schutzschaltung |
KR101979944B1 (ko) * | 2012-10-18 | 2019-05-17 | 엘지이노텍 주식회사 | 발광소자 |
DE102012112530A1 (de) * | 2012-12-18 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
JP6394052B2 (ja) | 2013-05-13 | 2018-09-26 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR102164087B1 (ko) * | 2014-06-10 | 2020-10-12 | 엘지이노텍 주식회사 | 발광소자 및 이를 구비한 발광소자 패키지 |
KR102412409B1 (ko) * | 2015-10-26 | 2022-06-23 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
CN106910724B (zh) * | 2016-04-05 | 2020-06-05 | 苏州捷芯威半导体有限公司 | 一种半导体器件 |
US10770440B2 (en) * | 2017-03-15 | 2020-09-08 | Globalfoundries Inc. | Micro-LED display assembly |
US11469138B2 (en) * | 2018-05-04 | 2022-10-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via for coupling attached component upper electrode to substrate |
DE102018123930A1 (de) * | 2018-09-27 | 2020-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip mit erstem und zweitem Kontaktelement und Verfahren zur Herstellung des optoelektronischen Halbleiterchips |
Family Cites Families (4)
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JP2004343138A (ja) * | 2001-11-19 | 2004-12-02 | Sanyo Electric Co Ltd | 化合物半導体発光素子の製造方法 |
CN1632958A (zh) * | 2005-01-10 | 2005-06-29 | 金芃 | 新型垂直结构的氮化镓基半导体发光二极管及其生产工艺 |
CN1329988C (zh) * | 2005-07-22 | 2007-08-01 | 金芃 | 带有防静电二极管的金属化硅芯片及其制造工艺 |
CN100452460C (zh) * | 2006-05-29 | 2009-01-14 | 金芃 | 通孔垂直结构的半导体芯片及其制造方法 |
-
2006
- 2006-08-01 CN CNB2006100890615A patent/CN100446288C/zh not_active Expired - Fee Related
-
2007
- 2007-07-30 US US11/881,872 patent/US20080029761A1/en not_active Abandoned
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008131743A1 (de) * | 2007-04-26 | 2008-11-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement |
US8476644B2 (en) | 2007-04-26 | 2013-07-02 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the manufacture of a plurality of optoelectronic components |
CN102214764A (zh) * | 2010-04-12 | 2011-10-12 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明系统 |
CN102214764B (zh) * | 2010-04-12 | 2016-03-09 | Lg伊诺特有限公司 | 发光器件、发光器件封装以及照明系统 |
CN106252483B (zh) * | 2011-04-15 | 2021-02-02 | 晶元光电股份有限公司 | 发光装置 |
CN106252483A (zh) * | 2011-04-15 | 2016-12-21 | 晶元光电股份有限公司 | 发光装置 |
WO2013010389A1 (zh) * | 2011-07-15 | 2013-01-24 | 中国科学院半导体研究所 | 发光二极管封装结构及其制造方法 |
US9246052B2 (en) | 2011-07-15 | 2016-01-26 | Institute Of Semiconductors, Chinese Academy Of Sciences | Packaging structure of light emitting diode and method of manufacturing the same |
CN102769086A (zh) * | 2012-07-09 | 2012-11-07 | 上海大学 | 基于硅基板通孔技术倒装芯片的发光二极管及其制造工艺 |
CN102769086B (zh) * | 2012-07-09 | 2015-02-25 | 上海大学 | 基于硅基板通孔技术倒装芯片的发光二极管及其制造工艺 |
CN104737314A (zh) * | 2012-08-31 | 2015-06-24 | 奥斯兰姆奥普托半导体有限责任公司 | 光电子半导体构件 |
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