CN100432641C - 光检测装置 - Google Patents

光检测装置 Download PDF

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Publication number
CN100432641C
CN100432641C CNB038036436A CN03803643A CN100432641C CN 100432641 C CN100432641 C CN 100432641C CN B038036436 A CNB038036436 A CN B038036436A CN 03803643 A CN03803643 A CN 03803643A CN 100432641 C CN100432641 C CN 100432641C
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CN
China
Prior art keywords
aforementioned
substrate
capacitor
integrating circuit
input
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB038036436A
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English (en)
Chinese (zh)
Other versions
CN1630810A (zh
Inventor
水野诚一郎
山中辰己
藤井义磨郎
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN1630810A publication Critical patent/CN1630810A/zh
Application granted granted Critical
Publication of CN100432641C publication Critical patent/CN100432641C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNB038036436A 2002-02-12 2003-02-12 光检测装置 Expired - Fee Related CN100432641C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP034298/2002 2002-02-12
JP2002034298A JP4012743B2 (ja) 2002-02-12 2002-02-12 光検出装置

Publications (2)

Publication Number Publication Date
CN1630810A CN1630810A (zh) 2005-06-22
CN100432641C true CN100432641C (zh) 2008-11-12

Family

ID=27678025

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038036436A Expired - Fee Related CN100432641C (zh) 2002-02-12 2003-02-12 光检测装置

Country Status (7)

Country Link
US (1) US7336808B2 (https=)
EP (1) EP1473553B1 (https=)
JP (1) JP4012743B2 (https=)
CN (1) CN100432641C (https=)
AU (1) AU2003207058A1 (https=)
IL (1) IL163454A (https=)
WO (1) WO2003069288A1 (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1554760B1 (en) * 2002-10-25 2009-08-19 Ipl Intellectual Property Licensing Limited Circuit substrate and method
US7170143B2 (en) 2003-10-20 2007-01-30 Hamamatsu Photonics K.K. Semiconductor photo-detection device and radiation apparatus
JP4589030B2 (ja) * 2004-05-10 2010-12-01 浜松ホトニクス株式会社 光検出装置
US20060045383A1 (en) * 2004-08-31 2006-03-02 Picciotto Carl E Displacement estimation system and method
TW201101476A (en) 2005-06-02 2011-01-01 Sony Corp Semiconductor image sensor module and method of manufacturing the same
WO2007013534A1 (en) * 2005-07-27 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100798276B1 (ko) * 2006-08-23 2008-01-24 동부일렉트로닉스 주식회사 이미지 센서 및 그 제조방법
JP5085122B2 (ja) 2006-12-21 2012-11-28 浜松ホトニクス株式会社 半導体光検出素子及び放射線検出装置
KR100860466B1 (ko) * 2006-12-27 2008-09-25 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그 제조방법
JP2009158570A (ja) * 2007-12-25 2009-07-16 Seiko Instruments Inc 光検出半導体装置、光検出装置、及び画像表示装置
KR100856942B1 (ko) * 2008-01-07 2008-09-04 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5256862B2 (ja) * 2008-06-06 2013-08-07 富士通株式会社 撮像デバイス
JP5185206B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP5185208B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオード及びフォトダイオードアレイ
JP5185207B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5185205B2 (ja) 2009-02-24 2013-04-17 浜松ホトニクス株式会社 半導体光検出素子
JP2010283223A (ja) * 2009-06-05 2010-12-16 Hamamatsu Photonics Kk 半導体光検出素子及び半導体光検出素子の製造方法
JP5261304B2 (ja) * 2009-07-13 2013-08-14 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
JP5363222B2 (ja) * 2009-07-13 2013-12-11 浜松ホトニクス株式会社 半導体光検出素子及び半導体光検出素子の製造方法
DE102011081100A1 (de) * 2011-08-17 2013-02-21 Siemens Aktiengesellschaft Anordnung mit Photozellen
US10090349B2 (en) 2012-08-09 2018-10-02 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US9153565B2 (en) 2012-06-01 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensors with a high fill-factor
US8629524B2 (en) * 2012-04-27 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for vertically integrated backside illuminated image sensors
US8957358B2 (en) 2012-04-27 2015-02-17 Taiwan Semiconductor Manufacturing Company, Ltd. CMOS image sensor chips with stacked scheme and methods for forming the same
US10297630B2 (en) * 2012-06-18 2019-05-21 Forza Silicon Corporation Pinned charge transimpedance amplifier
DE102012220416A1 (de) 2012-11-09 2014-05-15 Siemens Aktiengesellschaft Fotoempfänger mit einer Vielzahl von Fotozellen und Durchkontaktierungen sowie Verfahren zu dessen Herstellung
JP5682638B2 (ja) * 2013-01-15 2015-03-11 株式会社ニコン 撮像素子
JP6361633B2 (ja) * 2015-11-02 2018-07-25 株式会社ニコン 撮像素子
US10559619B2 (en) 2016-02-22 2020-02-11 Sony Corporation Imaging device and method of manufacturing imaging device
KR101699810B1 (ko) * 2016-05-31 2017-01-26 주식회사 이와이엘 양자 랜덤펄스 생성기
JP6779825B2 (ja) 2017-03-30 2020-11-04 キヤノン株式会社 半導体装置および機器
JP7533533B2 (ja) * 2020-06-16 2024-08-14 株式会社ニコン 撮像素子
FR3120741B1 (fr) * 2021-03-09 2023-12-08 St Microelectronics Alps Sas Dispositif photosensible comportant un circuit intégrateur par groupe d’au moins deux éléments photosensibles.

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239915A (ja) * 1988-03-22 1989-09-25 Nec Corp 半導体集積回路
JP2001291877A (ja) * 2000-04-05 2001-10-19 Hamamatsu Photonics Kk 固体撮像装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730030B2 (ja) 1983-08-24 1995-04-05 日産化学工業株式会社 ピラゾールスルホニルウレア誘導体、その製法および該誘導体を含有する選択性除草剤
JPH077814B2 (ja) * 1987-02-03 1995-01-30 松下電器産業株式会社 実装基板
US4843520A (en) 1987-02-03 1989-06-27 Matsushita Electric Industrial Co. Ltd. Electronic circuit module
JPS63205527A (ja) * 1987-02-20 1988-08-25 Sanyo Electric Co Ltd 測光回路
JPS63298187A (ja) * 1987-05-29 1988-12-05 Matsushita Electric Ind Co Ltd 放射線センサアレイ
JPH02271281A (ja) 1989-04-13 1990-11-06 Matsushita Electric Ind Co Ltd 検出器ユニット
JP2617798B2 (ja) * 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
JP2940726B2 (ja) * 1991-07-02 1999-08-25 三洋電機株式会社 光半導体装置
JPH0629507A (ja) * 1992-04-21 1994-02-04 Nec Corp 演算機能付きフォトダイオード
US5665959A (en) * 1995-01-13 1997-09-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration Solid-state image sensor with focal-plane digital photon-counting pixel array
US6144718A (en) * 1997-11-26 2000-11-07 General Electric Company Flexible cable connection for detector module
US6552745B1 (en) * 1998-04-08 2003-04-22 Agilent Technologies, Inc. CMOS active pixel with memory for imaging sensors
JP3668926B2 (ja) * 1999-08-27 2005-07-06 株式会社ルネサステクノロジ 光インタコネクション受信モジュール
US6525415B2 (en) * 1999-12-28 2003-02-25 Fuji Xerox Co., Ltd. Three-dimensional semiconductor integrated circuit apparatus and manufacturing method therefor
US6476374B1 (en) 2000-04-25 2002-11-05 Innovative Technology Licensing, Llc Room temperature, low-light-level visible imager
US6483116B1 (en) * 2000-04-25 2002-11-19 Innovative Technology Licensing, Llc High performance ultraviolet imager for operation at room temperature
JP3713418B2 (ja) * 2000-05-30 2005-11-09 光正 小柳 ３次元画像処理装置の製造方法
JP2002354195A (ja) * 2001-05-29 2002-12-06 Hamamatsu Photonics Kk 信号処理回路および固体撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01239915A (ja) * 1988-03-22 1989-09-25 Nec Corp 半導体集積回路
JP2001291877A (ja) * 2000-04-05 2001-10-19 Hamamatsu Photonics Kk 固体撮像装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
intelligent image sensor chip with three dimensional structure. H.Kurino,K.W.Lee,T.nakamura,K.Sakuma,K.T.Park,N.Miyakawa,H.Shimazutsu,K.Y.Kim,K.Inamura,M.Koyanagi.electron device meeting, 1999.IEDM technicle digest.. 1999 *

Also Published As

Publication number Publication date
US7336808B2 (en) 2008-02-26
EP1473553A1 (en) 2004-11-03
EP1473553B1 (en) 2017-12-13
JP2003232679A (ja) 2003-08-22
WO2003069288A1 (en) 2003-08-21
AU2003207058A1 (en) 2003-09-04
EP1473553A4 (en) 2007-03-21
IL163454A (en) 2009-06-15
JP4012743B2 (ja) 2007-11-21
CN1630810A (zh) 2005-06-22
US20060165294A1 (en) 2006-07-27

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CF01 Termination of patent right due to non-payment of annual fee