CN100394544C - 发光型热处理设备 - Google Patents

发光型热处理设备 Download PDF

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Publication number
CN100394544C
CN100394544C CNB2006100799700A CN200610079970A CN100394544C CN 100394544 C CN100394544 C CN 100394544C CN B2006100799700 A CNB2006100799700 A CN B2006100799700A CN 200610079970 A CN200610079970 A CN 200610079970A CN 100394544 C CN100394544 C CN 100394544C
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CN
China
Prior art keywords
optical window
cavity
light
equipment
semiconductor wafer
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Active
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CNB2006100799700A
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English (en)
Chinese (zh)
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CN1858897A (zh
Inventor
伊藤祯朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Skilling Group
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
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Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Publication of CN1858897A publication Critical patent/CN1858897A/zh
Application granted granted Critical
Publication of CN100394544C publication Critical patent/CN100394544C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Recrystallisation Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Furnace Details (AREA)
CNB2006100799700A 2005-05-02 2006-04-29 发光型热处理设备 Active CN100394544C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005134148A JP4866020B2 (ja) 2005-05-02 2005-05-02 熱処理装置
JP2005134148 2005-05-02

Publications (2)

Publication Number Publication Date
CN1858897A CN1858897A (zh) 2006-11-08
CN100394544C true CN100394544C (zh) 2008-06-11

Family

ID=37297785

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100799700A Active CN100394544C (zh) 2005-05-02 2006-04-29 发光型热处理设备

Country Status (5)

Country Link
US (1) US20060291832A1 (ko)
JP (1) JP4866020B2 (ko)
KR (1) KR100802697B1 (ko)
CN (1) CN100394544C (ko)
TW (1) TWI307925B (ko)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080090309A1 (en) * 2003-10-27 2008-04-17 Ranish Joseph M Controlled annealing method
JP5119677B2 (ja) 2007-02-16 2013-01-16 株式会社Ｓｕｍｃｏ シリコンウェーハ及びその製造方法
DE102008034260B4 (de) * 2008-07-16 2014-06-26 Siltronic Ag Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD
CN101773917B (zh) * 2010-03-05 2015-01-07 上海集成电路研发中心有限公司 硅片清洗装置及方法
KR101829676B1 (ko) * 2011-12-29 2018-02-20 삼성전자주식회사 웨이퍼 열 처리 방법
KR101368818B1 (ko) 2012-05-03 2014-03-04 에이피시스템 주식회사 기판 처리 장치
CN102808175B (zh) * 2012-07-24 2014-04-02 北京鼎臣超导科技有限公司 一种新型大面积双面超导薄膜基片夹具及其应用
US9786529B2 (en) * 2013-03-11 2017-10-10 Applied Materials, Inc. Pyrometry filter for thermal process chamber
KR102255195B1 (ko) * 2013-04-16 2021-05-25 삼성디스플레이 주식회사 필름 건조 장치 및 필름 건조 방법
CN104269368A (zh) * 2014-08-29 2015-01-07 沈阳拓荆科技有限公司 一种利用前端模块为晶圆加热的装置及方法
CN107062848A (zh) * 2017-06-08 2017-08-18 福建省将乐县长兴电子有限公司 一种用于晶振生产的烘干装置
JP7191504B2 (ja) * 2017-07-14 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2019021828A (ja) * 2017-07-20 2019-02-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN108447804A (zh) * 2018-03-28 2018-08-24 天津大学 一种闪光灯退火炉
JP7319894B2 (ja) * 2019-11-18 2023-08-02 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN113517192B (zh) * 2021-07-14 2023-10-20 长江存储科技有限责任公司 晶圆处理方法和制造半导体器件的方法
CN115347125A (zh) * 2022-10-18 2022-11-15 中国华能集团清洁能源技术研究院有限公司 一种钙钛矿材料快速原位退火的方法及退火装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000010094A (ja) * 1998-06-19 2000-01-14 Nec Corp バックライト装置
EP1331437A1 (de) * 2002-01-23 2003-07-30 Zumtobel Staff GmbH & Co. KG Lichtstrahler mit Reflektor
US20030183168A1 (en) * 2002-03-28 2003-10-02 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US20040037543A1 (en) * 2002-08-21 2004-02-26 Dainippon Screen Mfg. Co., Ltd. Light irradiation type thermal processing apparatus
US20050063448A1 (en) * 2003-09-18 2005-03-24 Dainippon Screen Mfg. Co., Ltd. Apparatus and method for thermal processing of substrate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154616A (ja) * 1985-12-26 1987-07-09 Matsushita Electric Ind Co Ltd 気相成長装置
JPS632318A (ja) * 1986-06-23 1988-01-07 Hitachi Ltd ランプ加熱装置
KR19990039394A (ko) * 1997-11-12 1999-06-05 윤종용 반도체 램프가열 공정챔버
US6376806B2 (en) * 2000-05-09 2002-04-23 Woo Sik Yoo Flash anneal
JP2002064069A (ja) 2000-08-17 2002-02-28 Tokyo Electron Ltd 熱処理装置
US6437290B1 (en) * 2000-08-17 2002-08-20 Tokyo Electron Limited Heat treatment apparatus having a thin light-transmitting window
JP4842429B2 (ja) * 2000-10-03 2011-12-21 東京エレクトロン株式会社 熱処理装置の設計方法及びコンピュータ読み取り可能な記録媒体
TW540121B (en) * 2000-10-10 2003-07-01 Ushio Electric Inc Heat treatment device and process with light irradiation
JP2002118071A (ja) * 2000-10-10 2002-04-19 Ushio Inc 光照射式加熱処理装置及び方法
JP2002246328A (ja) * 2001-02-15 2002-08-30 Toshiba Corp 熱処理方法、熱処理装置及び半導体装置の製造方法
KR100395661B1 (ko) * 2002-09-24 2003-08-25 코닉 시스템 주식회사 급속 열처리 장치
JP2004304147A (ja) 2003-03-20 2004-10-28 Toshiba Corp 加熱装置、加熱方法及び処理基板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000010094A (ja) * 1998-06-19 2000-01-14 Nec Corp バックライト装置
EP1331437A1 (de) * 2002-01-23 2003-07-30 Zumtobel Staff GmbH & Co. KG Lichtstrahler mit Reflektor
US20030183168A1 (en) * 2002-03-28 2003-10-02 Dainippon Screen Mfg. Co., Ltd. Thermal processing apparatus and thermal processing method
US20040037543A1 (en) * 2002-08-21 2004-02-26 Dainippon Screen Mfg. Co., Ltd. Light irradiation type thermal processing apparatus
US20050063448A1 (en) * 2003-09-18 2005-03-24 Dainippon Screen Mfg. Co., Ltd. Apparatus and method for thermal processing of substrate

Also Published As

Publication number Publication date
JP2006310690A (ja) 2006-11-09
TWI307925B (en) 2009-03-21
CN1858897A (zh) 2006-11-08
KR100802697B1 (ko) 2008-02-12
JP4866020B2 (ja) 2012-02-01
US20060291832A1 (en) 2006-12-28
KR20060114657A (ko) 2006-11-07
TW200701369A (en) 2007-01-01

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: DAINIPPON SCREEN MFG. CO., LTD.

Free format text: FORMER NAME: DAINIPPON MESH PLATE MFR. CO., LTD.

Owner name: SCREEN GROUP CO., LTD.

Free format text: FORMER NAME: DAINIPPON SCREEN MFG. CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Kyoto City, Kyoto, Japan

Patentee after: Skilling Group

Address before: Kyoto City, Kyoto, Japan

Patentee before: DAINIPPON SCREEN MFG Co.,Ltd.

Address after: Kyoto City, Kyoto, Japan

Patentee after: DAINIPPON SCREEN MFG Co.,Ltd.

Address before: Kyoto City, Kyoto, Japan

Patentee before: Dainippon Screen Mfg. Co.,Ltd.