CN100375252C - 鳍片场效应晶体管半导体结构及其制造方法 - Google Patents

鳍片场效应晶体管半导体结构及其制造方法 Download PDF

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Publication number
CN100375252C
CN100375252C CNB2005100554569A CN200510055456A CN100375252C CN 100375252 C CN100375252 C CN 100375252C CN B2005100554569 A CNB2005100554569 A CN B2005100554569A CN 200510055456 A CN200510055456 A CN 200510055456A CN 100375252 C CN100375252 C CN 100375252C
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China
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gate
fin
impurity
dielectric layer
finfet
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CNB2005100554569A
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Chinese (zh)
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CN1691294A (zh
Inventor
A·布赖恩特
O·H·多库马奇
H·I·哈纳菲
E·J·诺瓦克
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Core Usa Second LLC
GlobalFoundries Inc
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6217—Fin field-effect transistors [FinFET] having non-uniform gate electrodes, e.g. gate conductors having varying doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB2005100554569A 2004-04-28 2005-03-17 鳍片场效应晶体管半导体结构及其制造方法 Expired - Lifetime CN100375252C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/709,323 2004-04-28
US10/709,323 US7056773B2 (en) 2004-04-28 2004-04-28 Backgated FinFET having different oxide thicknesses

Publications (2)

Publication Number Publication Date
CN1691294A CN1691294A (zh) 2005-11-02
CN100375252C true CN100375252C (zh) 2008-03-12

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US (3) US7056773B2 (enExample)
JP (1) JP5039979B2 (enExample)
CN (1) CN100375252C (enExample)
TW (1) TW200539279A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102460660A (zh) * 2009-06-26 2012-05-16 株式会社东芝 半导体装置的制造方法

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050156228A1 (en) * 2004-01-16 2005-07-21 Jeng Erik S. Manufacture method and structure of a nonvolatile memory
JP2006019578A (ja) * 2004-07-02 2006-01-19 Toshiba Corp 半導体装置及びその製造方法
JP2006128494A (ja) * 2004-10-29 2006-05-18 Toshiba Corp 半導体集積回路装置及びその製造方法
NZ548087A (en) * 2005-04-29 2010-10-29 Tomizo Yamamoto Rubber or resin foam containing zirconium or germanium
US7601404B2 (en) * 2005-06-09 2009-10-13 United Microelectronics Corp. Method for switching decoupled plasma nitridation processes of different doses
US7288802B2 (en) * 2005-07-27 2007-10-30 International Business Machines Corporation Virtual body-contacted trigate
US20070047364A1 (en) * 2005-08-31 2007-03-01 International Business Machines Corporation Methods and apparatus for varying a supply voltage or reference voltage using independent control of diode voltage in asymmetrical double-gate devices
US20070085576A1 (en) * 2005-10-14 2007-04-19 Hector Sanchez Output driver circuit with multiple gate devices
US7265004B2 (en) * 2005-11-14 2007-09-04 Freescale Semiconductor, Inc. Electronic devices including a semiconductor layer and a process for forming the same
US7309626B2 (en) * 2005-11-15 2007-12-18 International Business Machines Corporation Quasi self-aligned source/drain FinFET process
US7629220B2 (en) * 2006-06-30 2009-12-08 Freescale Semiconductor, Inc. Method for forming a semiconductor device and structure thereof
KR100838378B1 (ko) * 2006-09-29 2008-06-13 주식회사 하이닉스반도체 핀트랜지스터의 제조 방법
US20080111185A1 (en) 2006-11-13 2008-05-15 International Business Machines Corporation Asymmetric multi-gated transistor and method for forming
US8217435B2 (en) * 2006-12-22 2012-07-10 Intel Corporation Floating body memory cell having gates favoring different conductivity type regions
US7699996B2 (en) * 2007-02-28 2010-04-20 International Business Machines Corporation Sidewall image transfer processes for forming multiple line-widths
US20080211568A1 (en) * 2007-03-01 2008-09-04 Infineon Technologies Ag MuGFET POWER SWITCH
WO2008111406A1 (ja) 2007-03-09 2008-09-18 Nec Corporation コンフィギュラブル回路およびコンフィギュレーション方法
US7435636B1 (en) 2007-03-29 2008-10-14 Micron Technology, Inc. Fabrication of self-aligned gallium arsenide MOSFETs using damascene gate methods
US20080296680A1 (en) * 2007-05-30 2008-12-04 Qimonda Ag Method of making an integrated circuit including doping a fin
US7476578B1 (en) * 2007-07-12 2009-01-13 International Business Machines Corporation Process for finFET spacer formation
US20090206405A1 (en) * 2008-02-15 2009-08-20 Doyle Brian S Fin field effect transistor structures having two dielectric thicknesses
TWI830077B (zh) * 2009-08-07 2024-01-21 日商半導體能源研究所股份有限公司 半導體裝置
US8420476B2 (en) 2010-05-27 2013-04-16 International Business Machines Corporation Integrated circuit with finFETs and MIM fin capacitor
CN102468381A (zh) * 2010-11-23 2012-05-23 孙智江 一种形成p型重掺杂的方法
CN103035711B (zh) * 2011-09-30 2016-04-20 中国科学院微电子研究所 一种半导体结构及其制造方法
US9082849B2 (en) 2011-09-30 2015-07-14 The Institute of Microelectronics Chinese Academy of Science Semiconductor structure and method for manufacturing the same
US9876016B2 (en) * 2011-12-30 2018-01-23 Intel Corporation Wrap-around trench contact structure and methods of fabrication
FR2995720B1 (fr) * 2012-09-18 2014-10-24 Commissariat Energie Atomique Procede de realisation d'un dispositif a effet de champ a double grille a grilles independantes
CN103985748B (zh) * 2013-02-08 2016-12-28 中国科学院微电子研究所 半导体设置及其制造方法
US8987793B2 (en) * 2013-04-23 2015-03-24 Broadcom Corporation Fin-based field-effect transistor with split-gate structure
CN104134668B (zh) * 2013-05-03 2017-02-22 中国科学院微电子研究所 存储器件及其制造方法和存取方法
US9087869B2 (en) 2013-05-23 2015-07-21 International Business Machines Corporation Bulk semiconductor fins with self-aligned shallow trench isolation structures
CN110047933B (zh) * 2013-09-25 2022-11-08 太浩研究有限公司 用于finfet架构的用固态扩散源掺杂的隔离阱
TWI538108B (zh) * 2014-05-08 2016-06-11 林崇榮 具電阻性元件之非揮發性記憶體與其製作方法
US9515188B2 (en) * 2014-12-22 2016-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Fin field effect transistors having conformal oxide layers and methods of forming same
WO2016153716A1 (en) * 2015-03-20 2016-09-29 Applied Materials, Inc. An atomic layer process chamber for 3d conformal processing
US9570388B2 (en) 2015-06-26 2017-02-14 International Business Machines Corporation FinFET power supply decoupling
CN105609470B (zh) * 2015-08-20 2019-01-18 中国科学院微电子研究所 具有均匀阈值电压分布的半导体器件及其制造方法
CN105720970B (zh) * 2016-01-22 2018-06-26 宁波大学 一种基于FinFET器件的异或/同或门电路
CN107039522B (zh) * 2016-02-04 2019-12-31 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
CN106057657A (zh) * 2016-07-22 2016-10-26 上海华力微电子有限公司 多重图形化方法
CN106356305B (zh) * 2016-11-18 2019-05-31 上海华力微电子有限公司 优化鳍式场效晶体管结构的方法以及鳍式场效晶体管
US9812453B1 (en) * 2017-02-13 2017-11-07 Globalfoundries Inc. Self-aligned sacrificial epitaxial capping for trench silicide
CN109309005B (zh) * 2017-07-27 2022-03-22 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
US10254244B1 (en) 2017-10-11 2019-04-09 International Business Machines Corporation Biosensor having a sensing gate dielectric and a back gate dielectric
US11362188B2 (en) 2017-12-27 2022-06-14 Intel Corporation Field effect transistors with reduced electric field by thickening dielectric on the drain side
KR102535087B1 (ko) * 2018-04-20 2023-05-19 삼성전자주식회사 반도체 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003204068A (ja) * 2001-12-14 2003-07-18 Internatl Business Mach Corp <Ibm> インプランテッド非対称ドープト・ポリシリコン・ゲートＦｉｎＦＥＴ
US6642090B1 (en) * 2002-06-03 2003-11-04 International Business Machines Corporation Fin FET devices from bulk semiconductor and method for forming
US6709982B1 (en) * 2002-11-26 2004-03-23 Advanced Micro Devices, Inc. Double spacer FinFET formation

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3607431B2 (ja) * 1996-09-18 2005-01-05 株式会社東芝 半導体装置およびその製造方法
US6448615B1 (en) 1998-02-26 2002-09-10 Micron Technology, Inc. Methods, structures, and circuits for transistors with gate-to-body capacitive coupling
JP2000164868A (ja) * 1998-11-20 2000-06-16 Nec Corp ゲート膜形成方法及び半導体装置
JP2000195968A (ja) * 1998-12-25 2000-07-14 Mitsubishi Electric Corp 半導体装置の製造方法
JP2002118255A (ja) * 2000-07-31 2002-04-19 Toshiba Corp 半導体装置およびその製造方法
JP4044276B2 (ja) * 2000-09-28 2008-02-06 株式会社東芝 半導体装置及びその製造方法
US6686630B2 (en) 2001-02-07 2004-02-03 International Business Machines Corporation Damascene double-gate MOSFET structure and its fabrication method
US6593192B2 (en) 2001-04-27 2003-07-15 Micron Technology, Inc. Method of forming a dual-gated semiconductor-on-insulator device
US6611023B1 (en) 2001-05-01 2003-08-26 Advanced Micro Devices, Inc. Field effect transistor with self alligned double gate and method of forming same
JP2003110109A (ja) 2001-09-28 2003-04-11 Sharp Corp 半導体装置及びその製造方法並びに携帯電子機器
US6433609B1 (en) 2001-11-19 2002-08-13 International Business Machines Corporation Double-gate low power SOI active clamp network for single power supply and multiple power supply applications
US6635909B2 (en) * 2002-03-19 2003-10-21 International Business Machines Corporation Strained fin FETs structure and method
US6580132B1 (en) 2002-04-10 2003-06-17 International Business Machines Corporation Damascene double-gate FET
JP2003332582A (ja) 2002-05-13 2003-11-21 Toshiba Corp 半導体装置及びその製造方法
JP4004040B2 (ja) * 2002-09-05 2007-11-07 株式会社東芝 半導体装置
US8222680B2 (en) * 2002-10-22 2012-07-17 Advanced Micro Devices, Inc. Double and triple gate MOSFET devices and methods for making same
US6885055B2 (en) * 2003-02-04 2005-04-26 Lee Jong-Ho Double-gate FinFET device and fabricating method thereof
JP2005167163A (ja) * 2003-12-05 2005-06-23 National Institute Of Advanced Industrial & Technology 二重ゲート電界効果トランジスタ

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003204068A (ja) * 2001-12-14 2003-07-18 Internatl Business Mach Corp <Ibm> インプランテッド非対称ドープト・ポリシリコン・ゲートＦｉｎＦＥＴ
US6642090B1 (en) * 2002-06-03 2003-11-04 International Business Machines Corporation Fin FET devices from bulk semiconductor and method for forming
US6709982B1 (en) * 2002-11-26 2004-03-23 Advanced Micro Devices, Inc. Double spacer FinFET formation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102460660A (zh) * 2009-06-26 2012-05-16 株式会社东芝 半导体装置的制造方法
CN102460660B (zh) * 2009-06-26 2014-08-06 株式会社东芝 半导体装置的制造方法

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US7476946B2 (en) 2009-01-13
CN1691294A (zh) 2005-11-02
JP2005317978A (ja) 2005-11-10
US20050245009A1 (en) 2005-11-03
US20060145195A1 (en) 2006-07-06
JP5039979B2 (ja) 2012-10-03
TW200539279A (en) 2005-12-01
US7187042B2 (en) 2007-03-06
US7056773B2 (en) 2006-06-06
US20060237774A1 (en) 2006-10-26

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