CN100358195C - 半导体发光元件 - Google Patents
半导体发光元件 Download PDFInfo
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- CN100358195C CN100358195C CNB200410080671XA CN200410080671A CN100358195C CN 100358195 C CN100358195 C CN 100358195C CN B200410080671X A CNB200410080671X A CN B200410080671XA CN 200410080671 A CN200410080671 A CN 200410080671A CN 100358195 C CN100358195 C CN 100358195C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003337701 | 2003-09-29 | ||
JP2003337701A JP4130163B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1604409A CN1604409A (zh) | 2005-04-06 |
CN100358195C true CN100358195C (zh) | 2007-12-26 |
Family
ID=34373283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200410080671XA Active CN100358195C (zh) | 2003-09-29 | 2004-09-29 | 半导体发光元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US6998649B2 (zh) |
JP (1) | JP4130163B2 (zh) |
CN (1) | CN100358195C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI382568B (zh) * | 2009-06-16 | 2013-01-11 | Univ Nat Taiwan | 發光元件、發光二極體 |
CN103943737A (zh) * | 2014-04-30 | 2014-07-23 | 中国科学院半导体研究所 | 紫外发光二极管器件的制备方法 |
CN109004075A (zh) * | 2017-06-06 | 2018-12-14 | 清华大学 | 发光二极管 |
Families Citing this family (256)
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US20030198301A1 (en) * | 2002-01-30 | 2003-10-23 | Kazutaka Terashima | Method of epitaxial lateral overgrowth |
JP4463569B2 (ja) * | 2004-01-14 | 2010-05-19 | パナソニック株式会社 | レーザ装置 |
US7161188B2 (en) * | 2004-06-28 | 2007-01-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element |
JP4224041B2 (ja) * | 2004-08-26 | 2009-02-12 | シャープ株式会社 | 半導体レーザ素子、半導体レーザ素子の製造方法、光ディスク装置および光伝送システム |
JP5192239B2 (ja) * | 2005-02-04 | 2013-05-08 | ソウル オプト デバイス カンパニー リミテッド | 複数の発光セルを有する発光装置及びその製造方法 |
KR100878433B1 (ko) * | 2005-05-18 | 2009-01-13 | 삼성전기주식회사 | 발광소자의 오믹컨택층 제조방법 및 이를 이용한발광소자의 제조방법 |
KR101041843B1 (ko) | 2005-07-30 | 2011-06-17 | 삼성엘이디 주식회사 | 질화물계 화합물 반도체 발광소자 및 그 제조방법 |
US20090261317A1 (en) * | 2005-09-06 | 2009-10-22 | Roberto Paiella | Enhancement of Light Emission Efficiency by Tunable Surface Plasmons |
DE102005047168A1 (de) * | 2005-09-30 | 2007-04-12 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
WO2007040295A1 (en) * | 2005-10-04 | 2007-04-12 | Seoul Opto Device Co., Ltd. | (al, ga, in)n-based compound semiconductor and method of fabricating the same |
WO2007094476A1 (en) * | 2006-02-14 | 2007-08-23 | Showa Denko K.K. | Light-emitting diode |
JP2008135697A (ja) * | 2006-10-23 | 2008-06-12 | Rohm Co Ltd | 半導体発光素子 |
JP2008109021A (ja) * | 2006-10-27 | 2008-05-08 | Rohm Co Ltd | 半導体発光素子 |
US7583882B2 (en) * | 2006-11-10 | 2009-09-01 | University Of Alabama In Huntsville | Waveguides for ultra-long range surface plasmon-polariton propagation |
US7928471B2 (en) * | 2006-12-04 | 2011-04-19 | The United States Of America As Represented By The Secretary Of The Navy | Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor |
JP5355855B2 (ja) * | 2006-12-20 | 2013-11-27 | 古河電気工業株式会社 | 半導体発光素子及びその製造方法 |
KR100945989B1 (ko) * | 2007-02-09 | 2010-03-09 | 삼성전기주식회사 | 표면 플라즈몬 공명을 이용한 반도체 발광 소자 |
KR100896583B1 (ko) | 2007-02-16 | 2009-05-07 | 삼성전기주식회사 | 표면 플라즈몬 공명을 이용한 반도체 발광 소자 제조방법 |
JP2009088519A (ja) * | 2007-09-28 | 2009-04-23 | Samsung Electro-Mechanics Co Ltd | 微細パターンの形成方法及びこれを用いた半導体発光素子の製造方法 |
JP5474292B2 (ja) * | 2007-11-06 | 2014-04-16 | シャープ株式会社 | 窒化物半導体発光ダイオード素子 |
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US4706251A (en) * | 1985-03-18 | 1987-11-10 | Arthur D. Little, Inc. | Voltage tunable coherent light source |
EP0442002A1 (de) * | 1990-02-13 | 1991-08-21 | Siemens Aktiengesellschaft | Strahlungserzeugendes Halbleiterbauelement |
US6301282B1 (en) * | 1998-07-29 | 2001-10-09 | Lucent Technologies Inc. | Long wavelength semiconductor lasers incorporating waveguides based on surface plasmons |
US6534798B1 (en) * | 1999-09-08 | 2003-03-18 | California Institute Of Technology | Surface plasmon enhanced light emitting diode and method of operation for the same |
US6501783B1 (en) * | 2000-02-24 | 2002-12-31 | Lucent Technologies Inc. | Distributed feedback surface plasmon laser |
WO2002073707A1 (fr) * | 2001-03-12 | 2002-09-19 | Japan Science And Technology Corporation | Dispositif d'emission de lumiere a plasmon de faible dimension |
CN1437271A (zh) * | 2002-02-04 | 2003-08-20 | 联铨科技股份有限公司 | 发光二极管 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI382568B (zh) * | 2009-06-16 | 2013-01-11 | Univ Nat Taiwan | 發光元件、發光二極體 |
CN103943737A (zh) * | 2014-04-30 | 2014-07-23 | 中国科学院半导体研究所 | 紫外发光二极管器件的制备方法 |
CN103943737B (zh) * | 2014-04-30 | 2016-09-28 | 中国科学院半导体研究所 | 紫外发光二极管器件的制备方法 |
CN109004075A (zh) * | 2017-06-06 | 2018-12-14 | 清华大学 | 发光二极管 |
CN109004075B (zh) * | 2017-06-06 | 2020-02-07 | 清华大学 | 发光二极管 |
Also Published As
Publication number | Publication date |
---|---|
JP4130163B2 (ja) | 2008-08-06 |
US6998649B2 (en) | 2006-02-14 |
CN1604409A (zh) | 2005-04-06 |
JP2005108982A (ja) | 2005-04-21 |
US20050067625A1 (en) | 2005-03-31 |
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