CN100355046C - 防止掺杂剂自源极/漏极延伸部向外扩散的方法 - Google Patents

防止掺杂剂自源极/漏极延伸部向外扩散的方法 Download PDF

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Publication number
CN100355046C
CN100355046C CNB038067633A CN03806763A CN100355046C CN 100355046 C CN100355046 C CN 100355046C CN B038067633 A CNB038067633 A CN B038067633A CN 03806763 A CN03806763 A CN 03806763A CN 100355046 C CN100355046 C CN 100355046C
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China
Prior art keywords
oxide liner
ion implantation
substrate
source
drain
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Expired - Lifetime
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CNB038067633A
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English (en)
Chinese (zh)
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CN1643672A (zh
Inventor
A·C·韦
M·B·菲赛利耶
叶秉津
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GlobalFoundries US Inc
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H10D30/6717—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/021—Manufacture or treatment using multiple gate spacer layers, e.g. bilayered sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
CNB038067633A 2002-03-26 2003-03-13 防止掺杂剂自源极/漏极延伸部向外扩散的方法 Expired - Lifetime CN100355046C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/105,522 2002-03-26
US10/105,522 US6583016B1 (en) 2002-03-26 2002-03-26 Doped spacer liner for improved transistor performance

Publications (2)

Publication Number Publication Date
CN1643672A CN1643672A (zh) 2005-07-20
CN100355046C true CN100355046C (zh) 2007-12-12

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Family Applications (1)

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CNB038067633A Expired - Lifetime CN100355046C (zh) 2002-03-26 2003-03-13 防止掺杂剂自源极/漏极延伸部向外扩散的方法

Country Status (8)

Country Link
US (1) US6583016B1 (https=)
EP (1) EP1488453A1 (https=)
JP (1) JP4514023B2 (https=)
KR (1) KR100948939B1 (https=)
CN (1) CN100355046C (https=)
AU (1) AU2003220198A1 (https=)
TW (1) TWI270933B (https=)
WO (1) WO2003083929A1 (https=)

Cited By (1)

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CN107017290A (zh) * 2015-10-20 2017-08-04 台湾积体电路制造股份有限公司 栅极结构、半导体器件以及形成半导体器件的方法

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US6777298B2 (en) * 2002-06-14 2004-08-17 International Business Machines Corporation Elevated source drain disposable spacer CMOS
JP4112330B2 (ja) * 2002-10-02 2008-07-02 富士通株式会社 半導体装置の製造方法
JP2004363443A (ja) * 2003-06-06 2004-12-24 Toshiba Corp 不揮発性半導体記憶装置及びその製造方法
US6812105B1 (en) 2003-07-16 2004-11-02 International Business Machines Corporation Ultra-thin channel device with raised source and drain and solid source extension doping
CN1296987C (zh) * 2003-09-23 2007-01-24 茂德科技股份有限公司 接触孔的制造方法以及半导体元件的制造方法
WO2005067035A1 (en) * 2003-12-04 2005-07-21 International Business Machines Corporation Method for forming non-amorphous, ultra-thin semiconductor devices using sacrificial implantation layer
US20070029608A1 (en) * 2005-08-08 2007-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Offset spacers for CMOS transistors
KR100649311B1 (ko) * 2005-12-15 2006-11-24 동부일렉트로닉스 주식회사 게이트 스페이서를 이용한 피모스 소자의 변형된 채널층형성 방법 및 이 방법에 의해 형성된 피모스 소자
JP6087672B2 (ja) * 2012-03-16 2017-03-01 株式会社半導体エネルギー研究所 半導体装置
US9093554B2 (en) * 2012-05-14 2015-07-28 Globalfoundries Inc. Methods of forming semiconductor devices with embedded semiconductor material as source/drain regions using a reduced number of spacers
US10770354B2 (en) * 2017-11-15 2020-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method of forming integrated circuit with low-k sidewall spacers for gate stacks
CN110265481B (zh) * 2018-08-10 2023-01-17 友达光电股份有限公司 晶体管装置

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US6117719A (en) * 1997-12-18 2000-09-12 Advanced Micro Devices, Inc. Oxide spacers as solid sources for gallium dopant introduction
CN1057867C (zh) * 1995-12-20 2000-10-25 台湾茂矽电子股份有限公司 注入磷形成补偿的器件沟道区的半导体器件的制造方法
US6235600B1 (en) * 2000-03-20 2001-05-22 Taiwan Semiconductor Manufacturing Company Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner deposition

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US6117719A (en) * 1997-12-18 2000-09-12 Advanced Micro Devices, Inc. Oxide spacers as solid sources for gallium dopant introduction
US6235600B1 (en) * 2000-03-20 2001-05-22 Taiwan Semiconductor Manufacturing Company Method for improving hot carrier lifetime via a nitrogen implantation procedure performed before or after a teos liner deposition

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107017290A (zh) * 2015-10-20 2017-08-04 台湾积体电路制造股份有限公司 栅极结构、半导体器件以及形成半导体器件的方法
US10749008B2 (en) 2015-10-20 2020-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure, semiconductor device and the method of forming semiconductor device
CN107017290B (zh) * 2015-10-20 2020-09-04 台湾积体电路制造股份有限公司 栅极结构、半导体器件以及形成半导体器件的方法
US11195931B2 (en) 2015-10-20 2021-12-07 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure, semiconductor device and the method of forming semiconductor device

Also Published As

Publication number Publication date
KR20040093183A (ko) 2004-11-04
KR100948939B1 (ko) 2010-03-23
CN1643672A (zh) 2005-07-20
WO2003083929A1 (en) 2003-10-09
EP1488453A1 (en) 2004-12-22
TWI270933B (en) 2007-01-11
JP4514023B2 (ja) 2010-07-28
JP2005522033A (ja) 2005-07-21
AU2003220198A1 (en) 2003-10-13
TW200305940A (en) 2003-11-01
US6583016B1 (en) 2003-06-24

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