CN100347816C - 掩膜数据的修正方法和光掩膜 - Google Patents

掩膜数据的修正方法和光掩膜 Download PDF

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Publication number
CN100347816C
CN100347816C CNB2005100088348A CN200510008834A CN100347816C CN 100347816 C CN100347816 C CN 100347816C CN B2005100088348 A CNB2005100088348 A CN B2005100088348A CN 200510008834 A CN200510008834 A CN 200510008834A CN 100347816 C CN100347816 C CN 100347816C
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CN
China
Prior art keywords
mask data
correction
illumination
photomask
pattern
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Expired - Fee Related
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CNB2005100088348A
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English (en)
Chinese (zh)
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CN1661773A (zh
Inventor
福原和也
河村大辅
三本木省次
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Toshiba Corp
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Toshiba Corp
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Publication of CN1661773A publication Critical patent/CN1661773A/zh
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CNB2005100088348A 2004-02-23 2005-02-23 掩膜数据的修正方法和光掩膜 Expired - Fee Related CN100347816C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004046750A JP4351928B2 (ja) 2004-02-23 2004-02-23 マスクデータの補正方法、フォトマスクの製造方法及びマスクデータの補正プログラム
JP046750/2004 2004-02-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2007100963714A Division CN101042526B (zh) 2004-02-23 2005-02-23 掩膜数据的修正方法、光掩膜和光学像的预测方法

Publications (2)

Publication Number Publication Date
CN1661773A CN1661773A (zh) 2005-08-31
CN100347816C true CN100347816C (zh) 2007-11-07

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Family Applications (2)

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CNB2005100088348A Expired - Fee Related CN100347816C (zh) 2004-02-23 2005-02-23 掩膜数据的修正方法和光掩膜
CN2007100963714A Expired - Fee Related CN101042526B (zh) 2004-02-23 2005-02-23 掩膜数据的修正方法、光掩膜和光学像的预测方法

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CN2007100963714A Expired - Fee Related CN101042526B (zh) 2004-02-23 2005-02-23 掩膜数据的修正方法、光掩膜和光学像的预测方法

Country Status (4)

Country Link
US (1) US7685556B2 (https=)
JP (1) JP4351928B2 (https=)
CN (2) CN100347816C (https=)
TW (1) TW200540662A (https=)

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JP2007079517A (ja) * 2005-09-16 2007-03-29 Toshiba Corp パターン作成方法、パターン作成プログラム及び半導体装置の製造方法
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JP2007142275A (ja) 2005-11-21 2007-06-07 Toshiba Corp フォトマスクの判定方法、半導体装置の製造方法及びプログラム
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
JP2007317960A (ja) * 2006-05-26 2007-12-06 Canon Inc 露光条件の検出方法及び装置、並びに、露光装置
JP5107532B2 (ja) * 2006-05-31 2012-12-26 ルネサスエレクトロニクス株式会社 シミュレーション方法およびシミュレーションシステム、ならびにマスクパターンの修正方法
JP4786499B2 (ja) * 2006-10-26 2011-10-05 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
JP4796476B2 (ja) * 2006-11-07 2011-10-19 東京エレクトロン株式会社 熱処理板の温度設定方法、プログラム、プログラムを記録したコンピュータ読み取り可能な記録媒体及び熱処理板の温度設定装置
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JP5064116B2 (ja) 2007-05-30 2012-10-31 Ｈｏｙａ株式会社 フォトマスクの検査方法、フォトマスクの製造方法及び電子部品の製造方法
JP5077656B2 (ja) * 2007-06-18 2012-11-21 株式会社ニコン パターンデータ処理方法及びシステム、並びに露光方法及び装置
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JP4568341B2 (ja) * 2008-03-19 2010-10-27 株式会社東芝 シミュレーションモデル作成方法、マスクデータ作成方法、及び半導体装置の製造方法
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JP5575024B2 (ja) * 2011-03-22 2014-08-20 株式会社東芝 マスクパターン補正方法、マスクパターン補正プログラムおよび半導体装置の製造方法
TWI447828B (zh) * 2011-06-22 2014-08-01 Inotera Memories Inc 製程原始資料的壓縮方法及壓縮系統
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CN105068374B (zh) * 2015-08-11 2019-07-23 上海华虹宏力半导体制造有限公司 光学临近修正中的二维图形快速识别方法
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CN107179625B (zh) * 2017-06-29 2020-06-23 惠科股份有限公司 一种显示面板的间隔单元、光罩及显示面板的制造方法
KR102415583B1 (ko) * 2017-06-30 2022-07-04 삼성전자주식회사 Opc 모델의 최적화 방법 및 이를 이용한 반도체 소자의 제조 방법
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CN112561873B (zh) * 2020-12-11 2022-11-25 上海集成电路装备材料产业创新中心有限公司 一种基于机器学习的cdsem图像虚拟测量方法
CN112541545B (zh) * 2020-12-11 2022-09-02 上海集成电路装备材料产业创新中心有限公司 基于机器学习预测刻蚀工艺后cdsem图像的方法
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Also Published As

Publication number Publication date
CN101042526A (zh) 2007-09-26
TW200540662A (en) 2005-12-16
US7685556B2 (en) 2010-03-23
JP2005234485A (ja) 2005-09-02
CN1661773A (zh) 2005-08-31
JP4351928B2 (ja) 2009-10-28
US20050188341A1 (en) 2005-08-25
TWI317080B (https=) 2009-11-11
CN101042526B (zh) 2010-06-09

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