CN100345254C - 用低能量等离子体增强化学气相沉积法形成高迁移率硅锗结构 - Google Patents

用低能量等离子体增强化学气相沉积法形成高迁移率硅锗结构 Download PDF

Info

Publication number
CN100345254C
CN100345254C CNB028273095A CN02827309A CN100345254C CN 100345254 C CN100345254 C CN 100345254C CN B028273095 A CNB028273095 A CN B028273095A CN 02827309 A CN02827309 A CN 02827309A CN 100345254 C CN100345254 C CN 100345254C
Authority
CN
China
Prior art keywords
substrate
layer
growing system
growth
low energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028273095A
Other languages
English (en)
Chinese (zh)
Other versions
CN1615540A (zh
Inventor
H·冯卡内尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eidgenoessische Technische Hochschule Zurich ETHZ
Original Assignee
Eidgenoessische Technische Hochschule Zurich ETHZ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eidgenoessische Technische Hochschule Zurich ETHZ filed Critical Eidgenoessische Technische Hochschule Zurich ETHZ
Publication of CN1615540A publication Critical patent/CN1615540A/zh
Application granted granted Critical
Publication of CN100345254C publication Critical patent/CN100345254C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
CNB028273095A 2001-11-22 2002-09-05 用低能量等离子体增强化学气相沉积法形成高迁移率硅锗结构 Expired - Fee Related CN100345254C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01127834.8 2001-11-22
EP01127834A EP1315199A1 (en) 2001-11-22 2001-11-22 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
CN1615540A CN1615540A (zh) 2005-05-11
CN100345254C true CN100345254C (zh) 2007-10-24

Family

ID=8179316

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028273095A Expired - Fee Related CN100345254C (zh) 2001-11-22 2002-09-05 用低能量等离子体增强化学气相沉积法形成高迁移率硅锗结构

Country Status (6)

Country Link
US (1) US7115895B2 (https=)
EP (1) EP1315199A1 (https=)
JP (1) JP2005510081A (https=)
CN (1) CN100345254C (https=)
AU (1) AU2002335310A1 (https=)
WO (1) WO2003044839A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
US7678645B2 (en) 2003-03-26 2010-03-16 Eidgenoessische Technische Hochschule Zuerich Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
EP1513233B1 (en) * 2003-09-05 2008-10-29 Epispeed S.A. InGaAs/GaAs lasers on Silicon produced by LEPECVD and MOCVD
DE602005027196D1 (de) 2004-04-30 2011-05-12 Dichroic Cell S R L Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001)
JP2007250903A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
EP2049939A1 (en) * 2006-08-11 2009-04-22 Paul Scherrer Institut Light modulators comprising si-ge quantum well layers
US8535060B2 (en) 2006-08-25 2013-09-17 Brain & Science Llc System and method for detecting a specific cognitive-emotional state in a subject
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
US8237126B2 (en) * 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
EP2207911A1 (en) * 2007-08-17 2010-07-21 Epispeed S.A. Apparatus and method for producing epitaxial layers
EP2251897B1 (en) * 2009-05-13 2016-01-06 Siltronic AG A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
CN103165420B (zh) * 2011-12-14 2015-11-18 中国科学院上海微系统与信息技术研究所 一种SiGe中嵌入超晶格制备应变Si的方法
KR102142707B1 (ko) * 2013-06-19 2020-08-07 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
CN105632927B (zh) * 2014-10-30 2018-09-07 中芯国际集成电路制造(上海)有限公司 Pmos晶体管的形成方法
KR102465536B1 (ko) * 2016-06-08 2022-11-14 삼성전자주식회사 반도체 장치의 제조 방법
US20260033255A1 (en) * 2024-07-23 2026-01-29 Samsung Electronics Co., Ltd. Deposition by electron enhanced processes with positive substrate voltage

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0380077A3 (en) * 1989-01-25 1990-09-12 Hitachi, Ltd. Transistor provided with strained germanium layer
MY127672A (en) * 1999-03-12 2006-12-29 Ibm High speed ge channel heterostructures for field effect devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
A PLASMA PROCESS FOR ULTRAFAST DEPOSITION OF SIGE GRADEDBUFFER LAYERS C ROSENBLAD H ,VONKANEL M UMMER A DOMMANN,E MULLER,APPLIED PHYSICS LETTERS,Vol.76 No.4 2000 *
A plasma process for ultrafast deposition of SiGe gradedbuffer layers C.ROSENBLAD,H.VONKANEL,M.KUMMER,A.DOMMANN,E.MULLER,APPLIED PHYSICS LETTERS,Vol.76 No.4 2000 *

Also Published As

Publication number Publication date
US7115895B2 (en) 2006-10-03
AU2002335310A1 (en) 2003-06-10
CN1615540A (zh) 2005-05-11
EP1315199A1 (en) 2003-05-28
AU2002335310A8 (en) 2003-06-10
JP2005510081A (ja) 2005-04-14
WO2003044839A2 (en) 2003-05-30
US20050116226A1 (en) 2005-06-02
WO2003044839A3 (en) 2003-10-30

Similar Documents

Publication Publication Date Title
CN100345254C (zh) 用低能量等离子体增强化学气相沉积法形成高迁移率硅锗结构
CN1285101C (zh) 生产松弛SiGe衬底的方法
CN100437905C (zh) 形成晶格调谐的半导体衬底
US6593625B2 (en) Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing
US8882909B2 (en) Method for producing virtual Ge substrates for III/V-integration on Si(001)
JP4117914B2 (ja) 半導体層中のドーパント拡散制御プロセス及びそれにより形成された半導体層
CN1263089C (zh) 制造半导体基质的方法
JP5144002B2 (ja) 減少した転位パイルアップを有する半導体ヘテロ構造および関連した方法
CN1210763C (zh) 半导体器件及其生产工艺
TWI222106B (en) Semiconductor substrate, field-effect transistor, and their production methods
US8716753B2 (en) Nitride semiconductor material, semiconductor element, and manufacturing method thereof
TWI382456B (zh) 鬆弛矽化鍺層的磊晶成長
US20070134901A1 (en) Growth of GaAs expitaxial layers on Si substrate by using a novel GeSi buffer layer
EP1483783A2 (en) Strained si based layer made by uhv-cvd; and devices therein
CN1711625A (zh) 通过离子注入和热退火获得的在Si或绝缘体上硅衬底上的弛豫SiGe层
US7648853B2 (en) Dual channel heterostructure
CN1259694C (zh) 半导体衬底生产方法及半导体衬底和半导体器件
Ismail et al. Si/SiGe quantum wells: fundamentals to technology
US7678645B2 (en) Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
JP2002241195A (ja) エピタキシャル多層膜の製造方法及びエピタキシャル多層膜
CN1747130A (zh) 基于金属诱导结晶工艺的新型Si基Ge量子点结构制备方法
Rosenblad et al. Low energy plasma enhanced chemical vapour deposition-plasma enhanced deposition of epitaxial Si and Sige
Fitzgerald et al. Epitaxial growth of heterovalent GaAs/Ge and applications in III-V monolithic integration on Si substrates
KR20140055335A (ko) 에피택셜 웨이퍼 및 그 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20071024

Termination date: 20150905

EXPY Termination of patent right or utility model