JP2005510081A - 低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法 - Google Patents

低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法 Download PDF

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JP2005510081A
JP2005510081A JP2003546385A JP2003546385A JP2005510081A JP 2005510081 A JP2005510081 A JP 2005510081A JP 2003546385 A JP2003546385 A JP 2003546385A JP 2003546385 A JP2003546385 A JP 2003546385A JP 2005510081 A JP2005510081 A JP 2005510081A
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growth
layer
substrate
substrate temperature
lepecvd
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JP2005510081A5 (https=
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ハンス・フォン・ケーネル
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Eidgenoessische Technische Hochschule Zurich ETHZ
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Eidgenoessische Technische Hochschule Zurich ETHZ
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium

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  • Chemical Vapour Deposition (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2003546385A 2001-11-22 2002-09-05 低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法 Pending JP2005510081A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01127834A EP1315199A1 (en) 2001-11-22 2001-11-22 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
PCT/EP2002/009922 WO2003044839A2 (en) 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
JP2005510081A true JP2005510081A (ja) 2005-04-14
JP2005510081A5 JP2005510081A5 (https=) 2006-01-05

Family

ID=8179316

Family Applications (1)

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JP2003546385A Pending JP2005510081A (ja) 2001-11-22 2002-09-05 低エネルギープラズマ強化化学蒸着法による高移動度のシリコンゲルマニウム構造体の製造方法

Country Status (6)

Country Link
US (1) US7115895B2 (https=)
EP (1) EP1315199A1 (https=)
JP (1) JP2005510081A (https=)
CN (1) CN100345254C (https=)
AU (1) AU2002335310A1 (https=)
WO (1) WO2003044839A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267969A (ja) * 2009-05-13 2010-11-25 Siltronic Ag おもて面と裏面とを有するシリコン単結晶基板及び前記おもて面上に堆積されたＳｉＧｅの層を含んでなるウェーハを製造する方法
KR20140147250A (ko) * 2013-06-19 2014-12-30 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
US7678645B2 (en) 2003-03-26 2010-03-16 Eidgenoessische Technische Hochschule Zuerich Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
EP1513233B1 (en) * 2003-09-05 2008-10-29 Epispeed S.A. InGaAs/GaAs lasers on Silicon produced by LEPECVD and MOCVD
DE602005027196D1 (de) 2004-04-30 2011-05-12 Dichroic Cell S R L Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001)
JP2007250903A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
EP2049939A1 (en) * 2006-08-11 2009-04-22 Paul Scherrer Institut Light modulators comprising si-ge quantum well layers
US8535060B2 (en) 2006-08-25 2013-09-17 Brain & Science Llc System and method for detecting a specific cognitive-emotional state in a subject
FR2914783A1 (fr) * 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
US8237126B2 (en) * 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
EP2207911A1 (en) * 2007-08-17 2010-07-21 Epispeed S.A. Apparatus and method for producing epitaxial layers
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
CN103165420B (zh) * 2011-12-14 2015-11-18 中国科学院上海微系统与信息技术研究所 一种SiGe中嵌入超晶格制备应变Si的方法
CN105632927B (zh) * 2014-10-30 2018-09-07 中芯国际集成电路制造(上海)有限公司 Pmos晶体管的形成方法
KR102465536B1 (ko) * 2016-06-08 2022-11-14 삼성전자주식회사 반도체 장치의 제조 방법
US20260033255A1 (en) * 2024-07-23 2026-01-29 Samsung Electronics Co., Ltd. Deposition by electron enhanced processes with positive substrate voltage

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0380077A3 (en) * 1989-01-25 1990-09-12 Hitachi, Ltd. Transistor provided with strained germanium layer
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
MY127672A (en) * 1999-03-12 2006-12-29 Ibm High speed ge channel heterostructures for field effect devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010267969A (ja) * 2009-05-13 2010-11-25 Siltronic Ag おもて面と裏面とを有するシリコン単結晶基板及び前記おもて面上に堆積されたＳｉＧｅの層を含んでなるウェーハを製造する方法
KR20140147250A (ko) * 2013-06-19 2014-12-30 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
KR102142707B1 (ko) * 2013-06-19 2020-08-07 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자

Also Published As

Publication number Publication date
CN100345254C (zh) 2007-10-24
US7115895B2 (en) 2006-10-03
AU2002335310A1 (en) 2003-06-10
CN1615540A (zh) 2005-05-11
EP1315199A1 (en) 2003-05-28
AU2002335310A8 (en) 2003-06-10
WO2003044839A2 (en) 2003-05-30
US20050116226A1 (en) 2005-06-02
WO2003044839A3 (en) 2003-10-30

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