AU2002335310A1 - Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition - Google Patents

Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Info

Publication number
AU2002335310A1
AU2002335310A1 AU2002335310A AU2002335310A AU2002335310A1 AU 2002335310 A1 AU2002335310 A1 AU 2002335310A1 AU 2002335310 A AU2002335310 A AU 2002335310A AU 2002335310 A AU2002335310 A AU 2002335310A AU 2002335310 A1 AU2002335310 A1 AU 2002335310A1
Authority
AU
Australia
Prior art keywords
formation
low
vapor deposition
chemical vapor
plasma enhanced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002335310A
Other languages
English (en)
Other versions
AU2002335310A8 (en
Inventor
Hans Von Kanel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eidgenoessische Technische Hochschule Zurich ETHZ
Original Assignee
Eidgenoessische Technische Hochschule Zurich ETHZ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eidgenoessische Technische Hochschule Zurich ETHZ filed Critical Eidgenoessische Technische Hochschule Zurich ETHZ
Publication of AU2002335310A1 publication Critical patent/AU2002335310A1/en
Publication of AU2002335310A8 publication Critical patent/AU2002335310A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3254—Graded layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
AU2002335310A 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition Abandoned AU2002335310A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01127834A EP1315199A1 (en) 2001-11-22 2001-11-22 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition
EP01127834.8 2001-11-22
PCT/EP2002/009922 WO2003044839A2 (en) 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Publications (2)

Publication Number Publication Date
AU2002335310A1 true AU2002335310A1 (en) 2003-06-10
AU2002335310A8 AU2002335310A8 (en) 2003-06-10

Family

ID=8179316

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002335310A Abandoned AU2002335310A1 (en) 2001-11-22 2002-09-05 Formation of high-mobility silicon-germanium structures by low-energy plasma enhanced chemical vapor deposition

Country Status (6)

Country Link
US (1) US7115895B2 (https=)
EP (1) EP1315199A1 (https=)
JP (1) JP2005510081A (https=)
CN (1) CN100345254C (https=)
AU (1) AU2002335310A1 (https=)
WO (1) WO2003044839A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6855436B2 (en) * 2003-05-30 2005-02-15 International Business Machines Corporation Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
WO2004085717A1 (en) * 2003-03-26 2004-10-07 Eidgenoessische Technische Hochschule Zuerich Formation of thin semiconductor layers by low-energy plasma enhanced chemical vapor deposition and semiconductor heterostructure devices
DE60324425D1 (de) 2003-09-05 2008-12-11 Epispeed S A Durch LEPECVD und MOCVD auf Silizium hergestellte GaAs/GaAs-Laser
PT1745165E (pt) 2004-04-30 2011-06-30 Dichroic Cell S R L Método para produzir substratos virtuais de ge para integração de iii/v sobre si(001)
JP2007250903A (ja) * 2006-03-16 2007-09-27 Matsushita Electric Ind Co Ltd ヘテロ接合バイポーラトランジスタおよびその製造方法
EP2049939A1 (en) * 2006-08-11 2009-04-22 Paul Scherrer Institut Light modulators comprising si-ge quantum well layers
US8535060B2 (en) 2006-08-25 2013-09-17 Brain & Science Llc System and method for detecting a specific cognitive-emotional state in a subject
FR2914783A1 (fr) 2007-04-03 2008-10-10 St Microelectronics Sa Procede de fabrication d'un dispositif a gradient de concentration et dispositif correspondant.
US20110017127A1 (en) * 2007-08-17 2011-01-27 Epispeed Sa Apparatus and method for producing epitaxial layers
US8237126B2 (en) * 2007-08-17 2012-08-07 Csem Centre Suisse D'electronique Et De Mictrotechnique Sa X-ray imaging device and method for the manufacturing thereof
EP2251897B1 (en) * 2009-05-13 2016-01-06 Siltronic AG A method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
CN103165420B (zh) * 2011-12-14 2015-11-18 中国科学院上海微系统与信息技术研究所 一种SiGe中嵌入超晶格制备应变Si的方法
KR102142707B1 (ko) * 2013-06-19 2020-08-07 엘지이노텍 주식회사 반도체 기판, 발광 소자 및 전자 소자
CN105632927B (zh) * 2014-10-30 2018-09-07 中芯国际集成电路制造(上海)有限公司 Pmos晶体管的形成方法
KR102465536B1 (ko) * 2016-06-08 2022-11-14 삼성전자주식회사 반도체 장치의 제조 방법
US20260033255A1 (en) * 2024-07-23 2026-01-29 Samsung Electronics Co., Ltd. Deposition by electron enhanced processes with positive substrate voltage

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5241197A (en) * 1989-01-25 1993-08-31 Hitachi, Ltd. Transistor provided with strained germanium layer
EP0380077A3 (en) * 1989-01-25 1990-09-12 Hitachi, Ltd. Transistor provided with strained germanium layer
US5442205A (en) * 1991-04-24 1995-08-15 At&T Corp. Semiconductor heterostructure devices with strained semiconductor layers
MY127672A (en) * 1999-03-12 2006-12-29 Ibm High speed ge channel heterostructures for field effect devices

Also Published As

Publication number Publication date
WO2003044839A3 (en) 2003-10-30
WO2003044839A2 (en) 2003-05-30
US7115895B2 (en) 2006-10-03
EP1315199A1 (en) 2003-05-28
CN1615540A (zh) 2005-05-11
AU2002335310A8 (en) 2003-06-10
US20050116226A1 (en) 2005-06-02
CN100345254C (zh) 2007-10-24
JP2005510081A (ja) 2005-04-14

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase