CN100335956C - 图像显示装置 - Google Patents

图像显示装置 Download PDF

Info

Publication number
CN100335956C
CN100335956C CNB021405980A CN02140598A CN100335956C CN 100335956 C CN100335956 C CN 100335956C CN B021405980 A CNB021405980 A CN B021405980A CN 02140598 A CN02140598 A CN 02140598A CN 100335956 C CN100335956 C CN 100335956C
Authority
CN
China
Prior art keywords
circuit
tft
display device
block
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB021405980A
Other languages
English (en)
Chinese (zh)
Other versions
CN1426043A (zh
Inventor
芝健夫
波多野睦子
山口伸也
朴成基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Liquid Crystal Display Co Ltd
Japan Display Inc
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of CN1426043A publication Critical patent/CN1426043A/zh
Application granted granted Critical
Publication of CN100335956C publication Critical patent/CN100335956C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
CNB021405980A 2001-12-12 2002-07-10 图像显示装置 Expired - Fee Related CN100335956C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP378027/2001 2001-12-12
JP2001378027A JP2003179068A (ja) 2001-12-12 2001-12-12 画像表示装置およびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNB2007101411769A Division CN100487921C (zh) 2001-12-12 2002-07-10 图像显示装置及其制造方法

Publications (2)

Publication Number Publication Date
CN1426043A CN1426043A (zh) 2003-06-25
CN100335956C true CN100335956C (zh) 2007-09-05

Family

ID=19185862

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB021405980A Expired - Fee Related CN100335956C (zh) 2001-12-12 2002-07-10 图像显示装置
CNB2007101411769A Expired - Fee Related CN100487921C (zh) 2001-12-12 2002-07-10 图像显示装置及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2007101411769A Expired - Fee Related CN100487921C (zh) 2001-12-12 2002-07-10 图像显示装置及其制造方法

Country Status (5)

Country Link
US (3) US6713324B2 (https=)
JP (1) JP2003179068A (https=)
KR (1) KR100894945B1 (https=)
CN (2) CN100335956C (https=)
TW (1) TWI268612B (https=)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
JP3903761B2 (ja) * 2001-10-10 2007-04-11 株式会社日立製作所 レ−ザアニ−ル方法およびレ−ザアニ−ル装置
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
KR100450761B1 (ko) * 2002-09-14 2004-10-01 한국전자통신연구원 능동 구동형 유기 이엘 다이오드 디스플레이 패널 회로
US7142030B2 (en) 2002-12-03 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Data latch circuit and electronic device
US6870895B2 (en) * 2002-12-19 2005-03-22 Semiconductor Energy Laboratory Co., Ltd. Shift register and driving method thereof
JP4116465B2 (ja) 2003-02-20 2008-07-09 株式会社日立製作所 パネル型表示装置とその製造方法および製造装置
JP4413569B2 (ja) * 2003-09-25 2010-02-10 株式会社 日立ディスプレイズ 表示パネルの製造方法及び表示パネル
JP4887599B2 (ja) * 2003-11-19 2012-02-29 セイコーエプソン株式会社 回路基板、回路基板の製造方法、表示装置および電子機器
JP4838982B2 (ja) 2004-01-30 2011-12-14 株式会社 日立ディスプレイズ レーザアニール方法およびレーザアニール装置
DE102004007398B4 (de) * 2004-02-16 2007-10-18 Infineon Technologies Ag Konfigurierbare Gate-Array-Zelle mit erweiterter Gate-Elektrode
JP2006019609A (ja) * 2004-07-05 2006-01-19 Hitachi Displays Ltd 画像表示装置
JP2006054073A (ja) * 2004-08-10 2006-02-23 Fujitsu Hitachi Plasma Display Ltd プラズマディスプレイパネルの製造方法
KR101064186B1 (ko) * 2005-08-10 2011-09-14 삼성전자주식회사 레벨쉬프터와, 이를 갖는 표시장치
JP2007088364A (ja) 2005-09-26 2007-04-05 Hitachi Displays Ltd 表示装置
CN108172625B (zh) * 2016-12-07 2020-09-29 清华大学 一种逻辑电路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321310A (ja) * 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH11121753A (ja) * 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法
JP2000243970A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法
CN1312587A (zh) * 1994-08-29 2001-09-12 株式会社半导体能源研究所 用于电子光学器件的半导体电路及其制造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS642088A (en) 1987-06-24 1989-01-06 Nec Corp Active matrix liquid crystal display device and its production
JP2000058863A (ja) * 1993-05-26 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体装置
TW272319B (https=) * 1993-12-20 1996-03-11 Sharp Kk
US6723590B1 (en) * 1994-03-09 2004-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for laser-processing semiconductor device
JP3081497B2 (ja) * 1995-03-30 2000-08-28 三洋電機株式会社 表示装置及びその製造方法
JP3870420B2 (ja) * 1995-12-26 2007-01-17 セイコーエプソン株式会社 アクティブマトリクス基板の製造方法、エレクトロルミネッセンス装置の製造方法、表示装置の製造方法、及び電子機器の製造方法
JPH09283438A (ja) * 1996-04-08 1997-10-31 A G Technol Kk 多結晶半導体薄膜、その形成方法、多結晶半導体ｔｆｔ及びｔｆｔ基板
US6190949B1 (en) * 1996-05-22 2001-02-20 Sony Corporation Silicon thin film, group of silicon single crystal grains and formation process thereof, and semiconductor device, flash memory cell and fabrication process thereof
JP4086925B2 (ja) * 1996-12-27 2008-05-14 株式会社半導体エネルギー研究所 アクティブマトリクスディスプレイ
JP3343492B2 (ja) * 1997-04-02 2002-11-11 シャープ株式会社 薄膜半導体装置の製造方法
JPH1187720A (ja) * 1997-09-08 1999-03-30 Sanyo Electric Co Ltd 半導体装置及び液晶表示装置
JP3445121B2 (ja) * 1997-10-24 2003-09-08 キヤノン株式会社 マトリクス基板と液晶表示装置及びこれを用いるプロジェクター
EP1049144A4 (en) * 1997-12-17 2006-12-06 Matsushita Electronics Corp THIN SEMICONDUCTOR FILM, MANUFACTURING METHOD, APPARATUS AND ARRANGEMENT
KR100292048B1 (ko) * 1998-06-09 2001-07-12 구본준, 론 위라하디락사 박막트랜지스터액정표시장치의제조방법
WO2000002251A1 (en) * 1998-07-06 2000-01-13 Matsushita Electric Industrial Co., Ltd. Thin film transistor and liquid crystal display
JP2000252228A (ja) * 1999-03-04 2000-09-14 Toshiba Corp レーザアニール装置
JP2000275668A (ja) * 1999-03-19 2000-10-06 Fujitsu Ltd レーザアニーリング装置、液晶表示装置及びその製造方法
JP5210478B2 (ja) * 2001-08-31 2013-06-12 株式会社半導体エネルギー研究所 表示装置
JP2003224084A (ja) * 2001-11-22 2003-08-08 Semiconductor Energy Lab Co Ltd 半導体製造装置
JP4190798B2 (ja) * 2002-05-08 2008-12-03 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタ及びその製造方法
JP2004119919A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 半導体薄膜および半導体薄膜の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1312587A (zh) * 1994-08-29 2001-09-12 株式会社半导体能源研究所 用于电子光学器件的半导体电路及其制造方法
JPH09321310A (ja) * 1996-05-31 1997-12-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH11121753A (ja) * 1997-10-14 1999-04-30 Hitachi Ltd 半導体装置及びその製造方法
JP2000243970A (ja) * 1999-02-24 2000-09-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタとその製造方法及びそれを用いた液晶表示装置とその製造方法

Also Published As

Publication number Publication date
US20030109074A1 (en) 2003-06-12
CN101114098A (zh) 2008-01-30
CN1426043A (zh) 2003-06-25
US6949419B2 (en) 2005-09-27
KR20030051152A (ko) 2003-06-25
KR100894945B1 (ko) 2009-04-27
US20040185605A1 (en) 2004-09-23
JP2003179068A (ja) 2003-06-27
TWI268612B (en) 2006-12-11
US20050085021A1 (en) 2005-04-21
US7193238B2 (en) 2007-03-20
US6713324B2 (en) 2004-03-30
CN100487921C (zh) 2009-05-13

Similar Documents

Publication Publication Date Title
CN100335956C (zh) 图像显示装置
CN1169106C (zh) 有源矩阵器件
CN1892395A (zh) 多晶硅薄膜晶体管液晶显示面板及其制造方法
CN1577028A (zh) 显示器
CN1231046A (zh) 显示装置
CN1217806A (zh) 电流驱动型发光显示装置及其制造方法
CN101043047A (zh) 显示装置及其制造方法
KR20240024325A (ko) 표시 장치, 그 제조 방법, 및 전자 기기
CN1913163A (zh) 薄膜晶体管衬底及其制造方法
CN1437171A (zh) 平板显示器以及制造平板显示器的方法
CN1628333A (zh) 显示装置
CN1501336A (zh) 平板显示器及其制造方法
CN1735294A (zh) 有机电致发光器件及其制造方法
TW201029174A (en) System for displaying images and fabrication method thereof
JP5422991B2 (ja) 表示装置および表示装置の製造方法
CN1873989A (zh) 薄膜晶体管以及制造薄膜晶体管基板的方法
US7557376B2 (en) Display device using first and second semiconductor films of different crystallinity and boundary section therebetween
CN1577027A (zh) 液晶显示器件
CN1573436A (zh) 图像显示装置
CN1752830A (zh) 液晶面板的像素结构及其制造方法与驱动方法
CN101170076B (zh) 有机电激发光元件的制造方法及影像显示系统
CN1265427C (zh) 一种低温多晶硅薄膜晶体管的制造方法
JP2010151866A (ja) 表示装置および表示装置の製造方法、ならびに薄膜トランジスタ基板および薄膜トランジスタ基板の製造方法
CN1215571C (zh) 半导体器件、电路衬底、光电装置和电子设备
CN1862324A (zh) 薄膜晶体管及具有其的液晶显示器件及它们的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: HITACHI DISPLAY CO., LTD.

Free format text: FORMER OWNER: HITACHI,LTD.

Effective date: 20101012

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: TOKYO, JAPAN TO: CHIBA PREFECTURE, JAPAN

TR01 Transfer of patent right

Effective date of registration: 20101012

Address after: Chiba County, Japan

Patentee after: Hitachi Displays, Ltd.

Address before: Tokyo, Japan

Patentee before: Hitachi, Ltd.

ASS Succession or assignment of patent right

Owner name: IPS ALPHA SUPPORT CO., LTD.

Effective date: 20111130

C41 Transfer of patent application or patent right or utility model
C56 Change in the name or address of the patentee
CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Co-patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Patentee after: Hitachi Displays, Ltd.

Address before: Chiba County, Japan

Co-patentee before: IPS pioneer support society

Patentee before: Hitachi Displays, Ltd.

TR01 Transfer of patent right

Effective date of registration: 20111130

Address after: Chiba County, Japan

Co-patentee after: IPS Pioneer Support Society

Patentee after: Hitachi Displays, Ltd.

Address before: Chiba County, Japan

Patentee before: Hitachi Displays, Ltd.

C56 Change in the name or address of the patentee

Owner name: JAPAN DISPLAY, INC.

Free format text: FORMER NAME: APAN DISPLAY EAST, INC.

Owner name: APAN DISPLAY EAST, INC.

Free format text: FORMER NAME: HITACHI DISPLAY CO., LTD.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: JAPAN DISPLAY Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Japan Display East Inc.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

Address after: Chiba County, Japan

Patentee after: Japan Display East Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Hitachi Displays, Ltd.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

CP02 Change in the address of a patent holder

Address after: Tokyo, Japan

Patentee after: JAPAN DISPLAY Inc.

Patentee after: Panasonic Liquid Crystal Display Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: JAPAN DISPLAY Inc.

Patentee before: Panasonic Liquid Crystal Display Co.,Ltd.

EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20030625

Assignee: BOE TECHNOLOGY GROUP Co.,Ltd.

Assignor: JAPAN DISPLAY Inc.|Panasonic Liquid Crystal Display Co.,Ltd.

Contract record no.: 2013990000688

Denomination of invention: Projection lens for image display equipment

Granted publication date: 20070905

License type: Common License

Record date: 20131016

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070905

Termination date: 20200710

CF01 Termination of patent right due to non-payment of annual fee