CH623685A5 - - Google Patents
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- Publication number
- CH623685A5 CH623685A5 CH1382977A CH1382977A CH623685A5 CH 623685 A5 CH623685 A5 CH 623685A5 CH 1382977 A CH1382977 A CH 1382977A CH 1382977 A CH1382977 A CH 1382977A CH 623685 A5 CH623685 A5 CH 623685A5
- Authority
- CH
- Switzerland
- Prior art keywords
- silicon
- arsenic
- germanium
- doped
- substrate
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 32
- 229910052785 arsenic Inorganic materials 0.000 claims description 20
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 19
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 7
- 238000010849 ion bombardment Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 phosphorus or boron Chemical compound 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/024—Defect control-gettering and annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/061—Gettering-armorphous layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/938—Lattice strain control or utilization
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/748,035 US4111719A (en) | 1976-12-06 | 1976-12-06 | Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH623685A5 true CH623685A5 (fr) | 1981-06-15 |
Family
ID=25007704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1382977A CH623685A5 (fr) | 1976-12-06 | 1977-11-14 |
Country Status (14)
| Country | Link |
|---|---|
| US (2) | US4111719A (fr) |
| JP (1) | JPS5370668A (fr) |
| AU (1) | AU507591B2 (fr) |
| BE (1) | BE860359A (fr) |
| BR (1) | BR7707919A (fr) |
| CA (1) | CA1075831A (fr) |
| CH (1) | CH623685A5 (fr) |
| DE (1) | DE2752439C3 (fr) |
| ES (1) | ES464680A1 (fr) |
| FR (1) | FR2379162A1 (fr) |
| GB (1) | GB1536618A (fr) |
| IT (1) | IT1113672B (fr) |
| NL (1) | NL7713449A (fr) |
| SE (1) | SE425529B (fr) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4369072A (en) * | 1981-01-22 | 1983-01-18 | International Business Machines Corp. | Method for forming IGFET devices having improved drain voltage characteristics |
| JPS5935425A (ja) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | 半導体装置の製造方法 |
| GB2133618B (en) * | 1983-01-05 | 1986-09-10 | Gen Electric Co Plc | Fabricating semiconductor circuits |
| US4603471A (en) * | 1984-09-06 | 1986-08-05 | Fairchild Semiconductor Corporation | Method for making a CMOS circuit having a reduced tendency to latch by controlling the band-gap of source and drain regions |
| US4728998A (en) * | 1984-09-06 | 1988-03-01 | Fairchild Semiconductor Corporation | CMOS circuit having a reduced tendency to latch |
| US4928156A (en) * | 1987-07-13 | 1990-05-22 | Motorola, Inc. | N-channel MOS transistors having source/drain regions with germanium |
| US4837173A (en) * | 1987-07-13 | 1989-06-06 | Motorola, Inc. | N-channel MOS transistors having source/drain regions with germanium |
| JPH01220822A (ja) * | 1988-02-29 | 1989-09-04 | Mitsubishi Electric Corp | 化合物半導体装置の製造方法 |
| US4835112A (en) * | 1988-03-08 | 1989-05-30 | Motorola, Inc. | CMOS salicide process using germanium implantation |
| US5097308A (en) * | 1990-03-13 | 1992-03-17 | General Instrument Corp. | Method for controlling the switching speed of bipolar power devices |
| US5298435A (en) * | 1990-04-18 | 1994-03-29 | National Semiconductor Corporation | Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
| US5095358A (en) * | 1990-04-18 | 1992-03-10 | National Semiconductor Corporation | Application of electronic properties of germanium to inhibit n-type or p-type diffusion in silicon |
| US5316958A (en) * | 1990-05-31 | 1994-05-31 | International Business Machines Corporation | Method of dopant enhancement in an epitaxial silicon layer by using germanium |
| US5266510A (en) * | 1990-08-09 | 1993-11-30 | Micron Technology, Inc. | High performance sub-micron p-channel transistor with germanium implant |
| US5108935A (en) * | 1990-11-16 | 1992-04-28 | Texas Instruments Incorporated | Reduction of hot carrier effects in semiconductor devices by controlled scattering via the intentional introduction of impurities |
| US5108954A (en) * | 1991-09-23 | 1992-04-28 | Micron Technology, Inc. | Method of reducing contact resistance at silicide/active area interfaces and semiconductor devices produced according to the method |
| US5420055A (en) * | 1992-01-22 | 1995-05-30 | Kopin Corporation | Reduction of parasitic effects in floating body MOSFETs |
| US5426069A (en) * | 1992-04-09 | 1995-06-20 | Dalsa Inc. | Method for making silicon-germanium devices using germanium implantation |
| KR0123434B1 (ko) * | 1994-02-07 | 1997-11-26 | 천성순 | 실리콘 웨이퍼에서의 부정합전위의 발생을 억제화하기 위한 링패턴 형성방법 및 그 구조 |
| JP3243146B2 (ja) * | 1994-12-08 | 2002-01-07 | 株式会社東芝 | 半導体装置 |
| JP2002504270A (ja) * | 1998-04-09 | 2002-02-05 | コーニンクレッカ、フィリップス、エレクトロニクス、エヌ、ヴィ | 整流接合を有する半導体デバイスおよび該半導体デバイスの製造方法 |
| US6030863A (en) * | 1998-09-11 | 2000-02-29 | Taiwan Semiconductor Manufacturing Company | Germanium and arsenic double implanted pre-amorphization process for salicide technology |
| US6262456B1 (en) | 1998-11-06 | 2001-07-17 | Advanced Micro Devices, Inc. | Integrated circuit having transistors with different threshold voltages |
| US6114206A (en) * | 1998-11-06 | 2000-09-05 | Advanced Micro Devices, Inc. | Multiple threshold voltage transistor implemented by a damascene process |
| GB9826519D0 (en) * | 1998-12-02 | 1999-01-27 | Arima Optoelectronics Corp | Semiconductor devices |
| US20040121524A1 (en) * | 2002-12-20 | 2004-06-24 | Micron Technology, Inc. | Apparatus and method for controlling diffusion |
| US7297617B2 (en) * | 2003-04-22 | 2007-11-20 | Micron Technology, Inc. | Method for controlling diffusion in semiconductor regions |
| US7253071B2 (en) * | 2004-06-02 | 2007-08-07 | Taiwan Semiconductor Manufacturing Company | Methods for enhancing the formation of nickel mono-silicide by reducing the formation of nickel di-silicide |
| US8110469B2 (en) | 2005-08-30 | 2012-02-07 | Micron Technology, Inc. | Graded dielectric layers |
| WO2021163175A1 (fr) * | 2020-02-11 | 2021-08-19 | QROMIS, Inc. | Procédé et système destinés à diffuser du magnésium dans des matériaux de nitrure de gallium au moyen de sources de magnésium pulvérisées |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL204025A (fr) * | 1955-03-23 | |||
| US3485684A (en) * | 1967-03-30 | 1969-12-23 | Trw Semiconductors Inc | Dislocation enhancement control of silicon by introduction of large diameter atomic metals |
| US3836999A (en) * | 1970-09-21 | 1974-09-17 | Semiconductor Res Found | Semiconductor with grown layer relieved in lattice strain |
| US3943016A (en) * | 1970-12-07 | 1976-03-09 | General Electric Company | Gallium-phosphorus simultaneous diffusion process |
| NL161920C (nl) * | 1971-03-12 | 1980-03-17 | Hitachi Ltd | Werkwijze voor het vervaardigen van een half- geleiderinrichting, waarbij de roostervervorming t.g.v. doteerstoffen wordt gecompenseerd. |
| JPS50116274A (fr) * | 1974-02-27 | 1975-09-11 |
-
1976
- 1976-12-06 US US05/748,035 patent/US4111719A/en not_active Expired - Lifetime
-
1977
- 1977-09-23 CA CA287,340A patent/CA1075831A/fr not_active Expired
- 1977-10-18 FR FR7732160A patent/FR2379162A1/fr active Granted
- 1977-10-26 JP JP12770077A patent/JPS5370668A/ja active Pending
- 1977-10-31 BE BE182249A patent/BE860359A/fr not_active IP Right Cessation
- 1977-11-03 IT IT29282/77A patent/IT1113672B/it active
- 1977-11-04 AU AU30349/77A patent/AU507591B2/en not_active Expired
- 1977-11-14 CH CH1382977A patent/CH623685A5/de not_active IP Right Cessation
- 1977-11-16 GB GB47695/77A patent/GB1536618A/en not_active Expired
- 1977-11-24 DE DE2752439A patent/DE2752439C3/de not_active Expired
- 1977-11-28 BR BR7707919A patent/BR7707919A/pt unknown
- 1977-12-02 ES ES464680A patent/ES464680A1/es not_active Expired
- 1977-12-05 NL NL7713449A patent/NL7713449A/xx not_active Application Discontinuation
- 1977-12-05 SE SE7713736A patent/SE425529B/sv not_active IP Right Cessation
-
1978
- 1978-05-22 US US05/908,322 patent/US4137103A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4111719A (en) | 1978-09-05 |
| CA1075831A (fr) | 1980-04-15 |
| AU3034977A (en) | 1979-05-10 |
| ES464680A1 (es) | 1979-01-01 |
| NL7713449A (nl) | 1978-06-08 |
| IT1113672B (it) | 1986-01-20 |
| SE7713736L (sv) | 1978-06-07 |
| GB1536618A (en) | 1978-12-20 |
| DE2752439C3 (de) | 1981-01-29 |
| BE860359A (fr) | 1978-02-15 |
| AU507591B2 (en) | 1980-02-21 |
| DE2752439A1 (de) | 1978-06-08 |
| DE2752439B2 (de) | 1980-05-22 |
| BR7707919A (pt) | 1978-09-05 |
| US4137103A (en) | 1979-01-30 |
| FR2379162B1 (fr) | 1980-12-19 |
| FR2379162A1 (fr) | 1978-08-25 |
| JPS5370668A (en) | 1978-06-23 |
| SE425529B (sv) | 1982-10-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |