CH608653A5 - - Google Patents
Info
- Publication number
- CH608653A5 CH608653A5 CH1371375A CH1371375A CH608653A5 CH 608653 A5 CH608653 A5 CH 608653A5 CH 1371375 A CH1371375 A CH 1371375A CH 1371375 A CH1371375 A CH 1371375A CH 608653 A5 CH608653 A5 CH 608653A5
- Authority
- CH
- Switzerland
Links
Classifications
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- H10W74/147—
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- H10P14/662—
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- H10P14/683—
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- H10P14/6903—
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- H10W74/131—
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- H10W74/137—
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- H10P14/6306—
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- H10P14/6309—
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- H10P14/6322—
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- H10P14/6334—
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- H10P14/6342—
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- H10P14/6682—
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- H10P14/69215—
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- H10P14/6922—
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- H10P14/6929—
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- H10P14/69391—
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- H10P14/69433—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49123765A JPS6022497B2 (ja) | 1974-10-26 | 1974-10-26 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH608653A5 true CH608653A5 (cg-RX-API-DMAC10.html) | 1979-01-15 |
Family
ID=14868714
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1371375A CH608653A5 (cg-RX-API-DMAC10.html) | 1974-10-26 | 1975-10-23 |
Country Status (15)
| Country | Link |
|---|---|
| US (1) | US4063275A (cg-RX-API-DMAC10.html) |
| JP (1) | JPS6022497B2 (cg-RX-API-DMAC10.html) |
| AT (1) | AT370561B (cg-RX-API-DMAC10.html) |
| AU (1) | AU504667B2 (cg-RX-API-DMAC10.html) |
| BR (1) | BR7506996A (cg-RX-API-DMAC10.html) |
| CA (1) | CA1046650A (cg-RX-API-DMAC10.html) |
| CH (1) | CH608653A5 (cg-RX-API-DMAC10.html) |
| DE (1) | DE2547304A1 (cg-RX-API-DMAC10.html) |
| DK (1) | DK142758B (cg-RX-API-DMAC10.html) |
| ES (1) | ES442102A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2290040A1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1515179A (cg-RX-API-DMAC10.html) |
| IT (1) | IT1044592B (cg-RX-API-DMAC10.html) |
| NL (1) | NL183260C (cg-RX-API-DMAC10.html) |
| SE (1) | SE411606B (cg-RX-API-DMAC10.html) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2632647A1 (de) * | 1976-07-20 | 1978-01-26 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
| IN147578B (cg-RX-API-DMAC10.html) * | 1977-02-24 | 1980-04-19 | Rca Corp | |
| DE2730367A1 (de) * | 1977-07-05 | 1979-01-18 | Siemens Ag | Verfahren zum passivieren von halbleiterelementen |
| US4174252A (en) * | 1978-07-26 | 1979-11-13 | Rca Corporation | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes |
| CA1136773A (en) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Semiconductor device |
| FR2459551A1 (fr) * | 1979-06-19 | 1981-01-09 | Thomson Csf | Procede et structure de passivation a autoalignement sur l'emplacement d'un masque |
| GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
| US4344985A (en) * | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
| US4420765A (en) * | 1981-05-29 | 1983-12-13 | Rca Corporation | Multi-layer passivant system |
| AT384121B (de) * | 1983-03-28 | 1987-10-12 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
| JPS6042859A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 高耐圧半導体装置の製造方法 |
| JPS61222172A (ja) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法 |
| JPS6276673A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 高耐圧半導体装置 |
| DE3542166A1 (de) * | 1985-11-29 | 1987-06-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
| EP0388612B1 (en) * | 1989-03-24 | 1994-11-30 | International Business Machines Corporation | Semiconductor device with self-aligned contact to buried subcollector |
| JPH04343479A (ja) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | 可変容量ダイオード |
| DE69427501T2 (de) * | 1993-04-05 | 2002-05-23 | Denso Corp., Kariya | Halbleiteranordnung mit Dünnfilm-Widerstand |
| US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
| CN1293374C (zh) * | 2002-04-17 | 2007-01-03 | 北京师范大学 | 能直接测量波长的新结构光电探测器及其探测方法 |
| CN111816574B (zh) * | 2020-05-29 | 2022-03-04 | 济宁东方芯电子科技有限公司 | 一种uv膜模板及利用uv膜模板实现洁净玻璃钝化的方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2789258A (en) * | 1955-06-29 | 1957-04-16 | Raytheon Mfg Co | Intrinsic coatings for semiconductor junctions |
| DE1184178B (de) * | 1960-02-20 | 1964-12-23 | Standard Elektrik Lorenz Ag | Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen |
| CH428947A (fr) * | 1966-01-31 | 1967-01-31 | Centre Electron Horloger | Procédé de fabrication d'un circuit intégré |
| GB1211354A (en) * | 1966-12-01 | 1970-11-04 | Gen Electric | Improvements relating to passivated semiconductor devices |
| DE1614455C3 (de) * | 1967-03-16 | 1979-07-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers |
| US3419746A (en) * | 1967-05-25 | 1968-12-31 | Bell Telephone Labor Inc | Light sensitive storage device including diode array |
| US3440477A (en) * | 1967-10-18 | 1969-04-22 | Bell Telephone Labor Inc | Multiple readout electron beam device |
| NL162250C (nl) * | 1967-11-21 | 1980-04-15 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen. |
| US3558348A (en) * | 1968-04-18 | 1971-01-26 | Bell Telephone Labor Inc | Dielectric films for semiconductor devices |
| US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
| JPS497870B1 (cg-RX-API-DMAC10.html) * | 1969-06-06 | 1974-02-22 | ||
| US3878549A (en) * | 1970-10-27 | 1975-04-15 | Shumpei Yamazaki | Semiconductor memories |
| DE2220807A1 (de) * | 1971-04-30 | 1972-11-16 | Texas Instruments Inc | Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten |
| NL7204741A (cg-RX-API-DMAC10.html) * | 1972-04-08 | 1973-10-10 | ||
| JPS532552B2 (cg-RX-API-DMAC10.html) * | 1974-03-30 | 1978-01-28 |
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1974
- 1974-10-26 JP JP49123765A patent/JPS6022497B2/ja not_active Expired
-
1975
- 1975-10-22 US US05/624,889 patent/US4063275A/en not_active Expired - Lifetime
- 1975-10-22 DE DE19752547304 patent/DE2547304A1/de active Granted
- 1975-10-23 GB GB43656/75A patent/GB1515179A/en not_active Expired
- 1975-10-23 CA CA238,212A patent/CA1046650A/en not_active Expired
- 1975-10-23 CH CH1371375A patent/CH608653A5/xx not_active IP Right Cessation
- 1975-10-24 DK DK480275AA patent/DK142758B/da not_active IP Right Cessation
- 1975-10-24 SE SE7511927A patent/SE411606B/xx not_active Application Discontinuation
- 1975-10-24 IT IT28663/75A patent/IT1044592B/it active
- 1975-10-24 BR BR7506996*A patent/BR7506996A/pt unknown
- 1975-10-24 AU AU85991/75A patent/AU504667B2/en not_active Expired
- 1975-10-25 ES ES442102A patent/ES442102A1/es not_active Expired
- 1975-10-27 AT AT0818475A patent/AT370561B/de not_active IP Right Cessation
- 1975-10-27 FR FR7532826A patent/FR2290040A1/fr active Granted
- 1975-10-27 NL NLAANVRAGE7512559,A patent/NL183260C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL7512559A (nl) | 1976-04-28 |
| AU504667B2 (en) | 1979-10-25 |
| JPS5149686A (cg-RX-API-DMAC10.html) | 1976-04-30 |
| US4063275A (en) | 1977-12-13 |
| GB1515179A (en) | 1978-06-21 |
| FR2290040B1 (cg-RX-API-DMAC10.html) | 1979-08-17 |
| SE411606B (sv) | 1980-01-14 |
| DE2547304C2 (cg-RX-API-DMAC10.html) | 1988-08-11 |
| CA1046650A (en) | 1979-01-16 |
| AU8599175A (en) | 1977-04-28 |
| JPS6022497B2 (ja) | 1985-06-03 |
| DE2547304A1 (de) | 1976-04-29 |
| DK480275A (cg-RX-API-DMAC10.html) | 1976-04-27 |
| ATA818475A (de) | 1982-08-15 |
| DK142758B (da) | 1981-01-12 |
| NL183260B (nl) | 1988-04-05 |
| SE7511927L (sv) | 1976-04-27 |
| FR2290040A1 (fr) | 1976-05-28 |
| DK142758C (cg-RX-API-DMAC10.html) | 1981-08-10 |
| BR7506996A (pt) | 1976-08-17 |
| AT370561B (de) | 1983-04-11 |
| IT1044592B (it) | 1980-03-31 |
| NL183260C (nl) | 1988-09-01 |
| ES442102A1 (es) | 1977-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |