CA2910202C - Microlenses for multibeam arrays of optoelectronic devices for high frequency operation - Google Patents
Microlenses for multibeam arrays of optoelectronic devices for high frequency operation Download PDFInfo
- Publication number
- CA2910202C CA2910202C CA2910202A CA2910202A CA2910202C CA 2910202 C CA2910202 C CA 2910202C CA 2910202 A CA2910202 A CA 2910202A CA 2910202 A CA2910202 A CA 2910202A CA 2910202 C CA2910202 C CA 2910202C
- Authority
- CA
- Canada
- Prior art keywords
- optical device
- receiver
- light
- optical
- subarray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- 230000005693 optoelectronics Effects 0.000 title description 4
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 1
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- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
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- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- SAOPTAQUONRHEV-UHFFFAOYSA-N gold zinc Chemical compound [Zn].[Au] SAOPTAQUONRHEV-UHFFFAOYSA-N 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
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- 238000007731 hot pressing Methods 0.000 description 1
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- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/10—Controlling the intensity of the light
- H05B45/14—Controlling the intensity of the light using electrical feedback from LEDs or from LED modules
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/40—Details of LED load circuits
- H05B45/44—Details of LED load circuits with an active control inside an LED matrix
- H05B45/46—Details of LED load circuits with an active control inside an LED matrix having LEDs disposed in parallel lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06226—Modulation at ultra-high frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/868,034 US9232592B2 (en) | 2012-04-20 | 2013-04-22 | Addressable illuminator with eye-safety circuitry |
| US13/868,034 | 2013-04-22 | ||
| US13/902,555 | 2013-05-24 | ||
| US13/902,555 US8995493B2 (en) | 2009-02-17 | 2013-05-24 | Microlenses for multibeam arrays of optoelectronic devices for high frequency operation |
| PCT/US2013/042767 WO2014175901A1 (en) | 2013-04-22 | 2013-05-24 | Microlenses for multibeam arrays of optoelectronic devices for high frequency operation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2910202A1 CA2910202A1 (en) | 2014-10-30 |
| CA2910202C true CA2910202C (en) | 2019-09-17 |
Family
ID=51792283
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA2910202A Expired - Fee Related CA2910202C (en) | 2013-04-22 | 2013-05-24 | Microlenses for multibeam arrays of optoelectronic devices for high frequency operation |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP3000157B1 (https=) |
| JP (2) | JP6339665B2 (https=) |
| CA (1) | CA2910202C (https=) |
| WO (1) | WO2014175901A1 (https=) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9660418B2 (en) * | 2014-08-27 | 2017-05-23 | Align Technology, Inc. | VCSEL based low coherence emitter for confocal 3D scanner |
| AU2016298390B2 (en) | 2015-07-30 | 2021-09-02 | Optipulse Inc. | Rigid high power and high speed lasing grid structures |
| US9927558B2 (en) | 2016-04-19 | 2018-03-27 | Trilumina Corp. | Semiconductor lens optimization of fabrication |
| JP7027033B2 (ja) * | 2016-09-28 | 2022-03-01 | スタンレー電気株式会社 | 照明用の垂直共振器型発光素子モジュール |
| JP7027032B2 (ja) * | 2016-09-28 | 2022-03-01 | スタンレー電気株式会社 | 照明用の垂直共振器型発光素子モジュール |
| US10243324B2 (en) * | 2016-10-17 | 2019-03-26 | Trilumina Corp. | Matching drive device for multi-beam optoelectronic arrays |
| KR102722845B1 (ko) * | 2017-01-25 | 2024-10-29 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 반도체 소자 및 그 제조방법, 반도체 소자 패키지, 객체 검출 장치 |
| EP3576166A4 (en) * | 2017-01-25 | 2020-12-16 | LG Innotek Co., Ltd. | SEMICONDUCTOR DEVICE |
| EP3382828A1 (en) * | 2017-03-31 | 2018-10-03 | Koninklijke Philips N.V. | Inherently safe laser arrangement comprising a vertical cavity surface emitting laser |
| EP3633807B1 (en) * | 2017-05-31 | 2021-12-29 | Sony Group Corporation | Light-emitting element and light-emitting element manufacturing method |
| CN107315982A (zh) * | 2017-06-13 | 2017-11-03 | 深圳市华周测控技术有限公司 | 一种微距小视野高分辨率的扫码器 |
| DE112018003684T5 (de) * | 2017-07-18 | 2020-05-14 | Sony Corporation | Lichtemittierendes element und array aus lichtemittierenden elementen |
| US10530128B2 (en) * | 2017-07-25 | 2020-01-07 | Trilumina Corp. | Single-chip series connected VCSEL array |
| US11482835B2 (en) | 2017-07-25 | 2022-10-25 | Lumentum Operations Llc | VCSEL device with multiple stacked active regions |
| US10958350B2 (en) | 2017-08-11 | 2021-03-23 | Optipulse Inc. | Laser grid structures for wireless high speed data transfers |
| EP3665753A4 (en) * | 2017-08-11 | 2021-04-21 | Optipulse Inc. | HIGH PERFORMANCE LASER GRILLE STRUCTURE |
| WO2019036383A1 (en) * | 2017-08-14 | 2019-02-21 | Trilumina Corp. | A surface-mount compatible vcsel array |
| US10374705B2 (en) | 2017-09-06 | 2019-08-06 | Optipulse Inc. | Method and apparatus for alignment of a line-of-sight communications link |
| JP7128433B2 (ja) * | 2017-10-11 | 2022-08-31 | ウシオ電機株式会社 | 光照射装置 |
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| EP3000157A4 (en) | 2016-11-02 |
| EP3000157A1 (en) | 2016-03-30 |
| CA2910202A1 (en) | 2014-10-30 |
| JP6759274B2 (ja) | 2020-09-23 |
| WO2014175901A1 (en) | 2014-10-30 |
| JP6339665B2 (ja) | 2018-06-06 |
| EP3000157B1 (en) | 2018-12-12 |
| JP2018164089A (ja) | 2018-10-18 |
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