EP3665753A4 - High power laser grid structure - Google Patents

High power laser grid structure Download PDF

Info

Publication number
EP3665753A4
EP3665753A4 EP18843018.5A EP18843018A EP3665753A4 EP 3665753 A4 EP3665753 A4 EP 3665753A4 EP 18843018 A EP18843018 A EP 18843018A EP 3665753 A4 EP3665753 A4 EP 3665753A4
Authority
EP
European Patent Office
Prior art keywords
high power
grid structure
power laser
laser grid
power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18843018.5A
Other languages
German (de)
French (fr)
Other versions
EP3665753A1 (en
Inventor
John Richard JOSEPH
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Optipulse Inc
Original Assignee
Optipulse Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optipulse Inc filed Critical Optipulse Inc
Publication of EP3665753A1 publication Critical patent/EP3665753A1/en
Publication of EP3665753A4 publication Critical patent/EP3665753A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B19/00—Condensers, e.g. light collectors or similar non-imaging optics
    • G02B19/0033—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use
    • G02B19/0047—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source
    • G02B19/0052—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode
    • G02B19/0057—Condensers, e.g. light collectors or similar non-imaging optics characterised by the use for use with a light source the light source comprising a laser diode in the form of a laser diode array, e.g. laser diode bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1021—Coupled cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1025—Extended cavities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
    • H01S5/18388—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
EP18843018.5A 2017-08-11 2018-08-13 High power laser grid structure Pending EP3665753A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201762543972P 2017-08-11 2017-08-11
PCT/US2018/046556 WO2019033120A1 (en) 2017-08-11 2018-08-13 High power laser grid structure

Publications (2)

Publication Number Publication Date
EP3665753A1 EP3665753A1 (en) 2020-06-17
EP3665753A4 true EP3665753A4 (en) 2021-04-21

Family

ID=65272675

Family Applications (1)

Application Number Title Priority Date Filing Date
EP18843018.5A Pending EP3665753A4 (en) 2017-08-11 2018-08-13 High power laser grid structure

Country Status (5)

Country Link
EP (1) EP3665753A4 (en)
JP (1) JP7418328B2 (en)
AU (1) AU2018314281B2 (en)
CA (1) CA3072763A1 (en)
WO (1) WO2019033120A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2614300A (en) * 2021-12-23 2023-07-05 Toshiba Kk A photon source and method of fabricating a photon source

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140079088A1 (en) * 2009-12-19 2014-03-20 Trilumina Corporation System and method for combining laser arrays for digital outputs
EP3000157A1 (en) * 2012-04-20 2016-03-30 Trilumina Corporation Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US20160164261A1 (en) * 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6597713B2 (en) 1998-07-22 2003-07-22 Canon Kabushiki Kaisha Apparatus with an optical functional device having a special wiring electrode and method for fabricating the same
JP4295870B2 (en) * 1999-09-14 2009-07-15 浜松ホトニクス株式会社 Laser equipment
KR20070047292A (en) * 2004-07-30 2007-05-04 노바룩스 인코포레이티드 Apparatus, system, and method for wavelength conversion of mode-locked extended cavity surface emitting semiconductor lasers
JP2007173393A (en) * 2005-12-20 2007-07-05 Denso Corp Laser equipment
US10038304B2 (en) * 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
EP2636111B8 (en) * 2010-11-03 2020-08-19 TRUMPF Photonic Components GmbH Optical element for vertical external-cavity surface-emitting laser
DE102012203672B4 (en) * 2012-03-08 2018-03-15 Osram Oled Gmbh Optoelectronic component
AU2016298390B2 (en) * 2015-07-30 2021-09-02 Optipulse Inc. Rigid high power and high speed lasing grid structures
CN108604053B (en) * 2015-10-21 2021-11-02 普林斯顿光电子股份有限公司 Coding pattern projector

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160164261A1 (en) * 2009-02-17 2016-06-09 Trilumina Corp. Compact multi-zone infrared laser illuminator
US20140079088A1 (en) * 2009-12-19 2014-03-20 Trilumina Corporation System and method for combining laser arrays for digital outputs
EP3000157A1 (en) * 2012-04-20 2016-03-30 Trilumina Corporation Microlenses for multibeam arrays of optoelectronic devices for high frequency operation

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CARSON RICHARD F ET AL: "Progress in high-power high-speed VCSEL arrays", PROCEEDINGS OF SPIE; [PROCEEDINGS OF SPIE ISSN 0277-786X VOLUME 10524], SPIE, US, vol. 9766, 4 March 2016 (2016-03-04), pages 97660B - 97660B, XP060066638, ISBN: 978-1-5106-1533-5, DOI: 10.1117/12.2215009 *
See also references of WO2019033120A1 *
XIANG-TIAN KONG ET AL: "Graphene-Based Ultrathin Flat Lenses", ACS PHOTONICS, vol. 2, no. 2, 20 January 2015 (2015-01-20), pages 200 - 207, XP055555359, ISSN: 2330-4022, DOI: 10.1021/ph500197j *

Also Published As

Publication number Publication date
EP3665753A1 (en) 2020-06-17
AU2018314281B2 (en) 2024-02-01
AU2018314281A1 (en) 2020-04-02
JP2020530666A (en) 2020-10-22
WO2019033120A1 (en) 2019-02-14
CA3072763A1 (en) 2019-02-14
JP7418328B2 (en) 2024-01-19

Similar Documents

Publication Publication Date Title
EP3329562A4 (en) Rigid high power and high speed lasing grid structures
EP3646449A4 (en) High power battery-powered system
EP3659241A4 (en) High power battery-powered system
EP3295460A4 (en) Thermophotovoltaic electrical power generator
EP3735727A4 (en) Power grid system
EP3496263A4 (en) Hydroelectric power generation system
EP3264585A4 (en) Power generation system
EP3579397A4 (en) Power generation device
EP3460857A4 (en) Solar power generation assembly
EP3548734A4 (en) Mastless wind turbine for power generation
EP3460981A4 (en) Power generation element
EP3496264A4 (en) Hydroelectric power generation system
EP3303826A4 (en) Power generator assembly
EP3299620A4 (en) Thermoacoustic power generation system
EP3708827A4 (en) Wind power generation system
EP3703252A4 (en) Solar power generation system
EP3604802A4 (en) Power generation system
EP3504944A4 (en) Laser power distribution module
EP3665753A4 (en) High power laser grid structure
EP3357130A4 (en) High power single mode fiber laser
EP3446321A4 (en) Electrical power generator
EP3299619A4 (en) Thermoacoustic power generation system
EP3312413A4 (en) Wind power generation device
AU2017904223A0 (en) Power generation
AU2016903713A0 (en) Power generation

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20200311

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20210318

RIC1 Information provided on ipc code assigned before grant

Ipc: H01S 5/183 20060101AFI20210312BHEP

Ipc: H01S 5/20 20060101ALI20210312BHEP

Ipc: H01S 5/227 20060101ALI20210312BHEP

Ipc: H01S 5/042 20060101ALI20210312BHEP

Ipc: H01S 5/42 20060101ALI20210312BHEP

Ipc: H01S 5/10 20210101ALN20210312BHEP

Ipc: H01S 5/40 20060101ALN20210312BHEP

Ipc: G02B 19/00 20060101ALN20210312BHEP

P01 Opt-out of the competence of the unified patent court (upc) registered

Effective date: 20230529