CA2288458A1 - Resist pattern, process for the information of the same, and process forthe formation of wiring pattern - Google Patents

Resist pattern, process for the information of the same, and process forthe formation of wiring pattern Download PDF

Info

Publication number
CA2288458A1
CA2288458A1 CA002288458A CA2288458A CA2288458A1 CA 2288458 A1 CA2288458 A1 CA 2288458A1 CA 002288458 A CA002288458 A CA 002288458A CA 2288458 A CA2288458 A CA 2288458A CA 2288458 A1 CA2288458 A1 CA 2288458A1
Authority
CA
Canada
Prior art keywords
resist
pattern
resist pattern
photomask
formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002288458A
Other languages
English (en)
French (fr)
Inventor
Yuji Toyota
Yoshihiro Koshido
Masayuki Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Publication of CA2288458A1 publication Critical patent/CA2288458A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/056—Using an artwork, i.e. a photomask for exposing photosensitive layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/947—Subphotolithographic processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/949—Energy beam treating radiation resist on semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/951—Lift-off
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Materials For Photolithography (AREA)
CA002288458A 1998-11-19 1999-11-03 Resist pattern, process for the information of the same, and process forthe formation of wiring pattern Abandoned CA2288458A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32989598A JP2000156377A (ja) 1998-11-19 1998-11-19 レジストパターン及びその形成方法並びに配線パターンの形成方法
JP10-329895 1998-11-19

Publications (1)

Publication Number Publication Date
CA2288458A1 true CA2288458A1 (en) 2000-05-19

Family

ID=18226465

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002288458A Abandoned CA2288458A1 (en) 1998-11-19 1999-11-03 Resist pattern, process for the information of the same, and process forthe formation of wiring pattern

Country Status (7)

Country Link
US (1) US6340635B1 (ko)
EP (1) EP1005066A3 (ko)
JP (1) JP2000156377A (ko)
KR (1) KR100432794B1 (ko)
CN (1) CN1254944A (ko)
CA (1) CA2288458A1 (ko)
NO (1) NO995665L (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001279494A (ja) * 2000-03-31 2001-10-10 Tdk Corp 導電体の形成方法、並びに半導体素子及び磁気ヘッドの製造方法
US6879400B2 (en) * 2000-12-11 2005-04-12 International Business Machines Corporation Single tone process window metrology target and method for lithographic processing
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP2007522524A (ja) 2004-02-11 2007-08-09 インターナショナル・ビジネス・マシーンズ・コーポレーション クロム基板又は感応性基板上のパターン形成されたレジスト・プロファイルを向上させるための混合基の使用
CN101354534B (zh) * 2007-07-27 2011-07-06 中芯国际集成电路制造(上海)有限公司 光刻胶的涂布方法及光刻图形的形成方法
WO2011139073A2 (ko) * 2010-05-04 2011-11-10 주식회사 엘지화학 네가티브 포토레지스트 조성물 및 소자의 패터닝 방법
JP2011164628A (ja) * 2011-03-02 2011-08-25 Semiconductor Energy Lab Co Ltd 電気光学装置の作製方法
US9612526B2 (en) * 2014-08-28 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. Photomask and method for fabricating integrated circuit
KR101669922B1 (ko) * 2015-01-15 2016-10-27 한국표준과학연구원 포토리소그래피 방법
CN110737170A (zh) * 2019-03-07 2020-01-31 南方科技大学 纳米结构的制作方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3631772A (en) * 1969-07-09 1972-01-04 Bell Telephone Labor Inc Method and apparatus for characterizing photoresist
US4224361A (en) 1978-09-05 1980-09-23 International Business Machines Corporation High temperature lift-off technique
JPS5676531A (en) 1979-11-28 1981-06-24 Fujitsu Ltd Manufacture of semiconductor device
US5486449A (en) * 1989-02-07 1996-01-23 Rohm Co., Ltd. Photomask, photoresist and photolithography for a monolithic IC
KR920015482A (ko) 1991-01-30 1992-08-27 김광호 광리소그라피의 한계해상도 이하의 미세패턴 형성방법
JP2842737B2 (ja) * 1991-08-08 1999-01-06 富士通株式会社 電子ビーム露光方法
US5403685A (en) * 1992-09-29 1995-04-04 Sharp Kabushiki Kaisha Lithographic process for producing small mask apertures and products thereof
JP2837063B2 (ja) * 1993-06-04 1998-12-14 シャープ株式会社 レジストパターンの形成方法
JP2701765B2 (ja) * 1994-12-28 1998-01-21 日本電気株式会社 半導体装置の製造方法
JP3197484B2 (ja) * 1995-05-31 2001-08-13 シャープ株式会社 フォトマスク及びその製造方法
US5635285A (en) * 1995-06-07 1997-06-03 International Business Machines Corporation Method and system for controlling the relative size of images formed in light-sensitive media
US5821013A (en) * 1996-12-13 1998-10-13 Symbios, Inc. Variable step height control of lithographic patterning through transmitted light intensity variation
US5928815A (en) * 1997-11-14 1999-07-27 Martin; Joseph Proximity masking device for near-field optical lithography

Also Published As

Publication number Publication date
EP1005066A2 (en) 2000-05-31
JP2000156377A (ja) 2000-06-06
US6340635B1 (en) 2002-01-22
KR100432794B1 (ko) 2004-05-24
KR20000047647A (ko) 2000-07-25
NO995665L (no) 2000-05-22
CN1254944A (zh) 2000-05-31
EP1005066A3 (en) 2001-04-04
NO995665D0 (no) 1999-11-18

Similar Documents

Publication Publication Date Title
US4165395A (en) Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation
CA1173689A (en) Electron beam exposed positive resist mask process
US4224361A (en) High temperature lift-off technique
US4174219A (en) Method of making a negative exposure mask
US4202914A (en) Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask
EP0083397B1 (en) Methods of forming electronic microcircuits
US6340635B1 (en) Resist pattern, process for the formation of the same, and process for the formation of wiring pattern
EP0145272B1 (en) Metal/semiconductor deposition
JPH05144823A (ja) 高密度バンプ形成方法
EP0072933B1 (en) Method for photolithographic pattern generation in a photoresist layer
EP0057268A2 (en) Method of fabricating X-ray lithographic masks
JP2002076575A (ja) 半導体装置用基板の製造方法
JPH1154460A (ja) 電導性構造を製造する方法
US6686128B1 (en) Method of fabricating patterned layers of material upon a substrate
JP2000181077A (ja) リフトオフ法による配線パターン形成方法
JPH0795509B2 (ja) レジストパタ−ンの形成方法
JP3421268B2 (ja) パターン形成法
JPS5857908B2 (ja) 薄膜構造体の形成方法
JPS5828735B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPS604221A (ja) 半導体装置の製造方法
JPH02156244A (ja) パターン形成方法
JPS5950053B2 (ja) 写真蝕刻方法
JPH03236216A (ja) 半導体装置の製造方法
JPS59103343A (ja) 半導体装置の製造方法
JP2000315868A (ja) ビアホール形成方法及び多層配線板の製造方法

Legal Events

Date Code Title Description
EEER Examination request
FZDE Discontinued