CA2202530A1 - Inductively coupled plasma sputter chamber with conductive material sputtering capabilities - Google Patents
Inductively coupled plasma sputter chamber with conductive material sputtering capabilitiesInfo
- Publication number
- CA2202530A1 CA2202530A1 CA002202530A CA2202530A CA2202530A1 CA 2202530 A1 CA2202530 A1 CA 2202530A1 CA 002202530 A CA002202530 A CA 002202530A CA 2202530 A CA2202530 A CA 2202530A CA 2202530 A1 CA2202530 A1 CA 2202530A1
- Authority
- CA
- Canada
- Prior art keywords
- chamber
- shade
- coil
- wall
- reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000009616 inductively coupled plasma Methods 0.000 title claims abstract description 10
- 239000004020 conductor Substances 0.000 title claims description 10
- 238000004544 sputter deposition Methods 0.000 title claims description 8
- 239000000463 material Substances 0.000 claims abstract description 11
- 230000001939 inductive effect Effects 0.000 claims abstract description 10
- 238000009825 accumulation Methods 0.000 claims abstract description 8
- 230000008878 coupling Effects 0.000 claims abstract description 5
- 238000010168 coupling process Methods 0.000 claims abstract description 5
- 238000005859 coupling reaction Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 17
- 150000002500 ions Chemical class 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 30
- 238000005530 etching Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000029305 taxis Effects 0.000 description 1
- SRVJKTDHMYAMHA-WUXMJOGZSA-N thioacetazone Chemical compound CC(=O)NC1=CC=C(\C=N\NC(N)=S)C=C1 SRVJKTDHMYAMHA-WUXMJOGZSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/0203—Protection arrangements
- H01J2237/0209—Avoiding or diminishing effects of eddy currents
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/326,743 | 1994-10-25 | ||
| US08/326,743 US5569363A (en) | 1994-10-25 | 1994-10-25 | Inductively coupled plasma sputter chamber with conductive material sputtering capabilities |
| PCT/US1994/013758 WO1996013051A1 (en) | 1994-10-25 | 1994-11-28 | Inductively coupled plasma sputter chamber with conductive material sputtering capabilities |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2202530A1 true CA2202530A1 (en) | 1996-05-02 |
Family
ID=23273518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002202530A Abandoned CA2202530A1 (en) | 1994-10-25 | 1994-11-28 | Inductively coupled plasma sputter chamber with conductive material sputtering capabilities |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5569363A (en, 2012) |
| EP (1) | EP0788654B1 (en, 2012) |
| JP (1) | JP3513542B2 (en, 2012) |
| KR (1) | KR100349426B1 (en, 2012) |
| AU (1) | AU1332895A (en, 2012) |
| CA (1) | CA2202530A1 (en, 2012) |
| DE (1) | DE69410830T2 (en, 2012) |
| TW (1) | TW277203B (en, 2012) |
| WO (1) | WO1996013051A1 (en, 2012) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6224724B1 (en) | 1995-02-23 | 2001-05-01 | Tokyo Electron Limited | Physical vapor processing of a surface with non-uniformity compensation |
| US6132564A (en) * | 1997-11-17 | 2000-10-17 | Tokyo Electron Limited | In-situ pre-metallization clean and metallization of semiconductor wafers |
| US6264812B1 (en) * | 1995-11-15 | 2001-07-24 | Applied Materials, Inc. | Method and apparatus for generating a plasma |
| JP2921493B2 (ja) | 1996-07-02 | 1999-07-19 | 日本電気株式会社 | プラズマ発生装置 |
| US6190513B1 (en) | 1997-05-14 | 2001-02-20 | Applied Materials, Inc. | Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition |
| EP0841683A3 (en) * | 1996-10-08 | 1999-12-01 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
| US6254737B1 (en) | 1996-10-08 | 2001-07-03 | Applied Materials, Inc. | Active shield for generating a plasma for sputtering |
| US5948215A (en) * | 1997-04-21 | 1999-09-07 | Tokyo Electron Limited | Method and apparatus for ionized sputtering |
| US5800688A (en) * | 1997-04-21 | 1998-09-01 | Tokyo Electron Limited | Apparatus for ionized sputtering |
| US6103070A (en) * | 1997-05-14 | 2000-08-15 | Applied Materials, Inc. | Powered shield source for high density plasma |
| US6579426B1 (en) | 1997-05-16 | 2003-06-17 | Applied Materials, Inc. | Use of variable impedance to control coil sputter distribution |
| US6345588B1 (en) | 1997-08-07 | 2002-02-12 | Applied Materials, Inc. | Use of variable RF generator to control coil voltage distribution |
| JP2001514444A (ja) | 1997-08-26 | 2001-09-11 | アプライド マテリアルズ インコーポレイテッド | プラズマ処理チャンバへ安定した電力を送ることができる装置及び方法 |
| US6565717B1 (en) * | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
| US6287435B1 (en) * | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| US6080287A (en) * | 1998-05-06 | 2000-06-27 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
| US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
| KR100550931B1 (ko) | 1998-09-30 | 2006-02-13 | 어낵시스 발처스 악티엔게젤샤프트 | 진공처리챔버 및 표면처리방법 |
| US6268284B1 (en) | 1998-10-07 | 2001-07-31 | Tokyo Electron Limited | In situ titanium aluminide deposit in high aspect ratio features |
| US6165542A (en) * | 1998-12-23 | 2000-12-26 | United Technologies Corporation | Method for fabricating and inspecting coatings |
| US6248251B1 (en) * | 1999-02-19 | 2001-06-19 | Tokyo Electron Limited | Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma |
| US6254745B1 (en) * | 1999-02-19 | 2001-07-03 | Tokyo Electron Limited | Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source |
| US7294563B2 (en) | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
| US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
| US6893907B2 (en) | 2002-06-05 | 2005-05-17 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
| US6939434B2 (en) * | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
| US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
| US7183177B2 (en) | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
| US7037813B2 (en) * | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
| US7288491B2 (en) | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US7430984B2 (en) * | 2000-08-11 | 2008-10-07 | Applied Materials, Inc. | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements |
| US6453842B1 (en) * | 2000-08-11 | 2002-09-24 | Applied Materials Inc. | Externally excited torroidal plasma source using a gas distribution plate |
| US6551446B1 (en) | 2000-08-11 | 2003-04-22 | Applied Materials Inc. | Externally excited torroidal plasma source with a gas distribution plate |
| US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US7094670B2 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US6494986B1 (en) * | 2000-08-11 | 2002-12-17 | Applied Materials, Inc. | Externally excited multiple torroidal plasma source |
| US7320734B2 (en) | 2000-08-11 | 2008-01-22 | Applied Materials, Inc. | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage |
| US7137354B2 (en) | 2000-08-11 | 2006-11-21 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
| US7479456B2 (en) | 2004-08-26 | 2009-01-20 | Applied Materials, Inc. | Gasless high voltage high contact force wafer contact-cooling electrostatic chuck |
| US7094316B1 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Externally excited torroidal plasma source |
| US7303982B2 (en) | 2000-08-11 | 2007-12-04 | Applied Materials, Inc. | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage |
| US6730605B2 (en) | 2001-04-12 | 2004-05-04 | Tokyo Electron Limited | Redistribution of copper deposited films |
| KR100481313B1 (ko) * | 2001-11-09 | 2005-04-07 | 최대규 | 유도결합 플라즈마 반응기 |
| US6984574B2 (en) | 2002-01-23 | 2006-01-10 | Mosel Vitelic, Inc. | Cobalt silicide fabrication using protective titanium |
| US7183716B2 (en) * | 2003-02-04 | 2007-02-27 | Veeco Instruments, Inc. | Charged particle source and operation thereof |
| US7695590B2 (en) | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
| US7244474B2 (en) | 2004-03-26 | 2007-07-17 | Applied Materials, Inc. | Chemical vapor deposition plasma process using an ion shower grid |
| US7291360B2 (en) | 2004-03-26 | 2007-11-06 | Applied Materials, Inc. | Chemical vapor deposition plasma process using plural ion shower grids |
| US7358192B2 (en) | 2004-04-08 | 2008-04-15 | Applied Materials, Inc. | Method and apparatus for in-situ film stack processing |
| US7767561B2 (en) | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
| US8058156B2 (en) | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
| US7666464B2 (en) | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
| US7428915B2 (en) | 2005-04-26 | 2008-09-30 | Applied Materials, Inc. | O-ringless tandem throttle valve for a plasma reactor chamber |
| US7422775B2 (en) | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
| US7109098B1 (en) | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
| US7312162B2 (en) | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
| US7335611B2 (en) | 2005-08-08 | 2008-02-26 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
| US7323401B2 (en) | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
| US7312148B2 (en) | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
| US7429532B2 (en) | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
| US20070068795A1 (en) * | 2005-09-26 | 2007-03-29 | Jozef Brcka | Hollow body plasma uniformity adjustment device and method |
| US7562638B2 (en) * | 2005-12-23 | 2009-07-21 | Lam Research Corporation | Methods and arrangement for implementing highly efficient plasma traps |
| US7679024B2 (en) * | 2005-12-23 | 2010-03-16 | Lam Research Corporation | Highly efficient gas distribution arrangement for plasma tube of a plasma processing chamber |
| US7554053B2 (en) * | 2005-12-23 | 2009-06-30 | Lam Research Corporation | Corrugated plasma trap arrangement for creating a highly efficient downstream microwave plasma system |
| KR101287898B1 (ko) * | 2009-08-25 | 2013-07-19 | 캐논 아네르바 가부시키가이샤 | 플라즈마 처리 장치 및 디바이스의 제조 방법 |
| US9103026B1 (en) * | 2010-10-21 | 2015-08-11 | Apollo Precision Beijing Limited | Filter circuit for a magnetron deposition source |
| US12249488B2 (en) | 2022-03-03 | 2025-03-11 | Applied Materials, Inc. | Plasma shaper to control ion flux distribution of plasma source |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1765850A1 (de) | 1967-11-10 | 1971-10-28 | Euratom | Verfahren und Vorrichtung zum Aufbringen von duennen Schichten |
| US5099100A (en) * | 1974-08-16 | 1992-03-24 | Branson International Plasma Corporation | Plasma etching device and process |
| GB1550853A (en) * | 1975-10-06 | 1979-08-22 | Hitachi Ltd | Apparatus and process for plasma treatment |
| JPS58158915A (ja) * | 1982-03-16 | 1983-09-21 | Fujitsu Ltd | 薄膜生成装置 |
| US4431901A (en) * | 1982-07-02 | 1984-02-14 | The United States Of America As Represented By The United States Department Of Energy | Induction plasma tube |
| US4572759A (en) * | 1984-12-26 | 1986-02-25 | Benzing Technology, Inc. | Troide plasma reactor with magnetic enhancement |
| JPH07116611B2 (ja) * | 1988-12-07 | 1995-12-13 | 日電アネルバ株式会社 | バイアスｅｃｒ装置 |
| US4918031A (en) | 1988-12-28 | 1990-04-17 | American Telephone And Telegraph Company,At&T Bell Laboratories | Processes depending on plasma generation using a helical resonator |
| JPH02250325A (ja) * | 1989-03-23 | 1990-10-08 | Mitsubishi Electric Corp | プラズマ処理装置 |
| JPH0361377A (ja) * | 1989-07-28 | 1991-03-18 | Matsushita Electric Ind Co Ltd | マイクロ波プラズマ膜堆積装置 |
| JP2602336B2 (ja) * | 1989-11-29 | 1997-04-23 | 株式会社日立製作所 | プラズマ処理装置 |
| JP3115015B2 (ja) * | 1991-02-19 | 2000-12-04 | 東京エレクトロン株式会社 | 縦型バッチ処理装置 |
| US5234529A (en) * | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
| JPH06224183A (ja) * | 1991-12-18 | 1994-08-12 | I N R Kenkyusho:Kk | プラズマ利用装置 |
| US5433812A (en) * | 1993-01-19 | 1995-07-18 | International Business Machines Corporation | Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination |
-
1994
- 1994-10-25 US US08/326,743 patent/US5569363A/en not_active Expired - Lifetime
- 1994-11-02 TW TW083110089A patent/TW277203B/zh not_active IP Right Cessation
- 1994-11-28 CA CA002202530A patent/CA2202530A1/en not_active Abandoned
- 1994-11-28 WO PCT/US1994/013758 patent/WO1996013051A1/en active IP Right Grant
- 1994-11-28 KR KR1019970702698A patent/KR100349426B1/ko not_active Expired - Lifetime
- 1994-11-28 EP EP95904774A patent/EP0788654B1/en not_active Expired - Lifetime
- 1994-11-28 AU AU13328/95A patent/AU1332895A/en not_active Abandoned
- 1994-11-28 JP JP51386296A patent/JP3513542B2/ja not_active Expired - Lifetime
- 1994-11-28 DE DE69410830T patent/DE69410830T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW277203B (en, 2012) | 1996-06-01 |
| EP0788654B1 (en) | 1998-06-03 |
| JPH10507875A (ja) | 1998-07-28 |
| WO1996013051A1 (en) | 1996-05-02 |
| KR100349426B1 (ko) | 2003-01-06 |
| JP3513542B2 (ja) | 2004-03-31 |
| DE69410830D1 (de) | 1998-07-09 |
| AU1332895A (en) | 1996-05-15 |
| US5569363A (en) | 1996-10-29 |
| EP0788654A1 (en) | 1997-08-13 |
| DE69410830T2 (de) | 1998-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |