CA2131696C - Semiconductor epitaxial substrate - Google Patents

Semiconductor epitaxial substrate Download PDF

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Publication number
CA2131696C
CA2131696C CA002131696A CA2131696A CA2131696C CA 2131696 C CA2131696 C CA 2131696C CA 002131696 A CA002131696 A CA 002131696A CA 2131696 A CA2131696 A CA 2131696A CA 2131696 C CA2131696 C CA 2131696C
Authority
CA
Canada
Prior art keywords
layer
substrate
crystal
epitaxial
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002131696A
Other languages
English (en)
French (fr)
Other versions
CA2131696A1 (en
Inventor
Masahiko Hata
Noboru Fukuhara
Hiroaki Takata
Katsumi Inui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co Ltd filed Critical Sumitomo Chemical Co Ltd
Publication of CA2131696A1 publication Critical patent/CA2131696A1/en
Application granted granted Critical
Publication of CA2131696C publication Critical patent/CA2131696C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H10P95/00—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H10P14/24—
    • H10P14/2911—
    • H10P14/3221—
    • H10P14/3421—
    • H10P14/3442—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Lasers (AREA)
  • Recrystallisation Techniques (AREA)
CA002131696A 1993-01-13 1994-01-12 Semiconductor epitaxial substrate Expired - Fee Related CA2131696C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPHEI.5-3948 1993-01-13
JP394893 1993-01-13
PCT/JP1994/000032 WO1994016459A1 (fr) 1993-01-13 1994-01-12 Substrat epitaxial semiconducteur

Publications (2)

Publication Number Publication Date
CA2131696A1 CA2131696A1 (en) 1994-07-14
CA2131696C true CA2131696C (en) 2003-08-19

Family

ID=11571342

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002131696A Expired - Fee Related CA2131696C (en) 1993-01-13 1994-01-12 Semiconductor epitaxial substrate

Country Status (7)

Country Link
US (1) US5569954A (enExample)
EP (1) EP0631299A4 (enExample)
KR (1) KR100281939B1 (enExample)
CA (1) CA2131696C (enExample)
SG (1) SG49646A1 (enExample)
TW (1) TW250574B (enExample)
WO (1) WO1994016459A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6229153B1 (en) * 1996-06-21 2001-05-08 Wisconsin Alumni Research Corporation High peak current density resonant tunneling diode
SE514183C2 (sv) * 1999-01-27 2001-01-15 Ericsson Telefon Ab L M Inställningsarrangemang
JP2002270516A (ja) 2001-03-07 2002-09-20 Nec Corp Ｉｉｉ族窒化物半導体の成長方法、ｉｉｉ族窒化物半導体膜およびそれを用いた半導体素子
US8134223B2 (en) * 2003-05-08 2012-03-13 Sumitomo Electric Industries, Ltd. III-V compound crystal and semiconductor electronic circuit element
TWI402896B (zh) * 2006-02-02 2013-07-21 Nippon Mining Co Substrate semiconductor growth substrate and epitaxial growth method
TWI298209B (en) * 2006-03-27 2008-06-21 Epistar Corp Semiconductor light-emitting device and method for fabricating the same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL171309C (nl) * 1970-03-02 1983-03-01 Hitachi Ltd Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium.
US4688068A (en) * 1983-07-08 1987-08-18 The United States Of America As Represented By The Department Of Energy Quantum well multijunction photovoltaic cell
JPH0670971B2 (ja) * 1984-10-22 1994-09-07 日本電気株式会社 結晶成長方法
JPH0697654B2 (ja) * 1985-12-19 1994-11-30 松下電器産業株式会社 化合物半導体装置の製造方法
US4872046A (en) * 1986-01-24 1989-10-03 University Of Illinois Heterojunction semiconductor device with <001> tilt
JP2750856B2 (ja) * 1987-11-12 1998-05-13 シャープ株式会社 半導体装置
US5221367A (en) * 1988-08-03 1993-06-22 International Business Machines, Corp. Strained defect-free epitaxial mismatched heterostructures and method of fabrication
US5016252A (en) * 1988-09-29 1991-05-14 Sanyo Electric Co., Ltd. Semiconductor laser device
JPH03225928A (ja) * 1990-01-31 1991-10-04 Hitachi Ltd エピタキシャル成長法及び半導体装置
JPH03283427A (ja) * 1990-03-29 1991-12-13 Sumitomo Chem Co Ltd 高電子移動度トランジスター用エピタキシャル基板の製造方法
JPH03290975A (ja) * 1990-04-09 1991-12-20 Fujitsu Ltd 縦型半導体装置
JP2870989B2 (ja) * 1990-06-04 1999-03-17 住友電気工業株式会社 化合物半導体の結晶成長方法
CA2041991A1 (en) * 1990-06-12 1991-12-13 Gary E. Bulman Silcon-doped inygal-yas laser
JPH0465037A (ja) * 1990-07-04 1992-03-02 Nakajima All Precision Kk キーボード
JPH05160515A (ja) * 1991-12-04 1993-06-25 Eastman Kodak Japan Kk 量子井戸型レーザダイオード

Also Published As

Publication number Publication date
WO1994016459A1 (fr) 1994-07-21
SG49646A1 (en) 1998-06-15
EP0631299A1 (en) 1994-12-28
CA2131696A1 (en) 1994-07-14
TW250574B (enExample) 1995-07-01
KR950700606A (ko) 1995-01-16
KR100281939B1 (ko) 2001-03-02
EP0631299A4 (en) 1997-05-14
US5569954A (en) 1996-10-29

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