CA2065242A1 - Dispositif misfet submicrometrique a suppression des porteurs chauds - Google Patents
Dispositif misfet submicrometrique a suppression des porteurs chaudsInfo
- Publication number
- CA2065242A1 CA2065242A1 CA002065242A CA2065242A CA2065242A1 CA 2065242 A1 CA2065242 A1 CA 2065242A1 CA 002065242 A CA002065242 A CA 002065242A CA 2065242 A CA2065242 A CA 2065242A CA 2065242 A1 CA2065242 A1 CA 2065242A1
- Authority
- CA
- Canada
- Prior art keywords
- region
- regions
- doped
- misfet structure
- dopant concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000002019 doping agent Substances 0.000 claims abstract description 57
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 125000006850 spacer group Chemical group 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 2
- 239000002210 silicon-based material Substances 0.000 claims 2
- 229910005540 GaP Inorganic materials 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 230000005684 electric field Effects 0.000 abstract description 20
- 238000005452 bending Methods 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 3
- 230000007774 longterm Effects 0.000 abstract description 3
- 230000009467 reduction Effects 0.000 abstract description 3
- 230000001629 suppression Effects 0.000 abstract 1
- 108091006146 Channels Proteins 0.000 description 25
- 239000007943 implant Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 6
- 239000012535 impurity Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000002674 ointment Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000007669 thermal treatment Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/410,979 US5012306A (en) | 1989-09-22 | 1989-09-22 | Hot-carrier suppressed sub-micron MISFET device |
| US410,979 | 1989-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2065242A1 true CA2065242A1 (fr) | 1991-03-23 |
Family
ID=23627056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002065242A Abandoned CA2065242A1 (fr) | 1989-09-22 | 1990-09-19 | Dispositif misfet submicrometrique a suppression des porteurs chauds |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US5012306A (fr) |
| EP (1) | EP0493520B1 (fr) |
| JP (1) | JPH05502548A (fr) |
| KR (1) | KR920704361A (fr) |
| CA (1) | CA2065242A1 (fr) |
| DE (1) | DE69020160T2 (fr) |
| WO (1) | WO1991004577A1 (fr) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR940002400B1 (ko) * | 1991-05-15 | 1994-03-24 | 금성일렉트론 주식회사 | 리세스 게이트를 갖는 반도체장치의 제조방법 |
| US5600578A (en) * | 1993-08-02 | 1997-02-04 | Advanced Micro Devices, Inc. | Test method for predicting hot-carrier induced leakage over time in short-channel IGFETs and products designed in accordance with test results |
| US5439831A (en) * | 1994-03-09 | 1995-08-08 | Siemens Aktiengesellschaft | Low junction leakage MOSFETs |
| US5710450A (en) | 1994-12-23 | 1998-01-20 | Intel Corporation | Transistor with ultra shallow tip and method of fabrication |
| US5798291A (en) * | 1995-03-20 | 1998-08-25 | Lg Semicon Co., Ltd. | Method of making a semiconductor device with recessed source and drain |
| US6303446B1 (en) * | 1996-01-29 | 2001-10-16 | The Regents Of The University Of California | Method of making self-aligned lightly-doped-drain structure for MOS transistors |
| KR100218299B1 (ko) * | 1996-02-05 | 1999-09-01 | 구본준 | 트랜지스터 제조방법 |
| US5925913A (en) * | 1997-08-25 | 1999-07-20 | Advanced Micro Devices, Inc. | System for enhancing the performance of a circuit by reducing the channel length of one or more transistors |
| US6127233A (en) * | 1997-12-05 | 2000-10-03 | Texas Instruments Incorporated | Lateral MOSFET having a barrier between the source/drain regions and the channel region |
| US6313505B2 (en) * | 1998-09-02 | 2001-11-06 | Advanced Micro Devices, Inc. | Method for forming shallow source/drain extension for MOS transistor |
| US6887762B1 (en) * | 1998-11-12 | 2005-05-03 | Intel Corporation | Method of fabricating a field effect transistor structure with abrupt source/drain junctions |
| KR100621546B1 (ko) | 2003-05-14 | 2006-09-13 | 삼성전자주식회사 | 엘리베이티드 소오스/드레인 구조의 모스트랜지스터 및 그제조방법 |
| US7098105B2 (en) | 2004-05-26 | 2006-08-29 | Micron Technology, Inc. | Methods for forming semiconductor structures |
| US7442976B2 (en) | 2004-09-01 | 2008-10-28 | Micron Technology, Inc. | DRAM cells with vertical transistors |
| US7923373B2 (en) | 2007-06-04 | 2011-04-12 | Micron Technology, Inc. | Pitch multiplication using self-assembling materials |
| US8098536B2 (en) | 2008-01-24 | 2012-01-17 | International Business Machines Corporation | Self-repair integrated circuit and repair method |
| US8138054B2 (en) * | 2009-04-01 | 2012-03-20 | International Business Machines Corporation | Enhanced field effect transistor |
| US7868391B2 (en) * | 2009-06-04 | 2011-01-11 | International Business Machines Corporation | 3-D single gate inverter |
| US8574982B2 (en) * | 2010-02-25 | 2013-11-05 | International Business Machines Corporation | Implementing eDRAM stacked FET structure |
| US8314001B2 (en) | 2010-04-09 | 2012-11-20 | International Business Machines Corporation | Vertical stacking of field effect transistor structures for logic gates |
| US9490345B2 (en) * | 2014-01-17 | 2016-11-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method thereof |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2802838A1 (de) * | 1978-01-23 | 1979-08-16 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
| US4378627A (en) * | 1980-07-08 | 1983-04-05 | International Business Machines Corporation | Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes |
| US4419810A (en) * | 1981-12-30 | 1983-12-13 | International Business Machines Corporation | Self-aligned field effect transistor process |
| US4557036A (en) * | 1982-03-31 | 1985-12-10 | Nippon Telegraph & Telephone Public Corp. | Semiconductor device and process for manufacturing the same |
| JPS59202669A (ja) * | 1983-05-02 | 1984-11-16 | Hitachi Ltd | 半導体装置とその製造方法 |
| JPS6022372A (ja) * | 1983-07-19 | 1985-02-04 | Toshiba Corp | 絶縁ゲ−ト型トランジスタ |
| JPS6047464A (ja) * | 1983-08-26 | 1985-03-14 | Toshiba Corp | 絶縁ゲ−ト型トランジスタ |
| JPS60247971A (ja) * | 1984-05-23 | 1985-12-07 | Toshiba Corp | Ｍｉｓ型半導体装置 |
| JPS612367A (ja) * | 1984-06-15 | 1986-01-08 | Hitachi Ltd | 半導体装置及びその製造方法 |
| JPS61105868A (ja) * | 1984-10-29 | 1986-05-23 | Seiko Epson Corp | 半導体装置 |
| JPS61216364A (ja) * | 1985-03-20 | 1986-09-26 | Fujitsu Ltd | 半導体装置 |
| US4680603A (en) * | 1985-04-12 | 1987-07-14 | General Electric Company | Graded extended drain concept for reduced hot electron effect |
| JPS62217665A (ja) * | 1986-03-19 | 1987-09-25 | Fujitsu Ltd | 電界効果トランジスタ |
| JPH0620140B2 (ja) * | 1986-06-11 | 1994-03-16 | 株式会社日立製作所 | 薄膜トランジスタ |
| JPS6344768A (ja) * | 1986-08-12 | 1988-02-25 | Mitsubishi Electric Corp | 電界効果型トランジスタ及びその製造方法 |
| KR910003835B1 (ko) * | 1986-08-29 | 1991-06-12 | 가부시키가이샤 도시바 | Mis형 반도체장치와 그 제조방법 |
| US4753898A (en) * | 1987-07-09 | 1988-06-28 | Motorola, Inc. | LDD CMOS process |
| US4908326A (en) * | 1988-01-19 | 1990-03-13 | Standard Microsystems Corporation | Process for fabricating self-aligned silicide lightly doped drain MOS devices |
| JPH0622372A (ja) * | 1992-06-30 | 1994-01-28 | Mitsumi Electric Co Ltd | シリアルデータの読み込みタイミング方法 |
| JPH06344768A (ja) * | 1993-06-07 | 1994-12-20 | Kansei Corp | 電気式集塵装置 |
-
1989
- 1989-09-22 US US07/410,979 patent/US5012306A/en not_active Expired - Fee Related
-
1990
- 1990-09-19 JP JP2514334A patent/JPH05502548A/ja active Pending
- 1990-09-19 DE DE69020160T patent/DE69020160T2/de not_active Expired - Fee Related
- 1990-09-19 WO PCT/US1990/005326 patent/WO1991004577A1/fr active IP Right Grant
- 1990-09-19 EP EP90915342A patent/EP0493520B1/fr not_active Expired - Lifetime
- 1990-09-19 CA CA002065242A patent/CA2065242A1/fr not_active Abandoned
- 1990-09-19 KR KR1019920700659A patent/KR920704361A/ko not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| DE69020160T2 (de) | 1995-10-26 |
| DE69020160D1 (de) | 1995-07-20 |
| EP0493520A4 (en) | 1993-04-14 |
| KR920704361A (ko) | 1992-12-19 |
| EP0493520B1 (fr) | 1995-06-14 |
| WO1991004577A1 (fr) | 1991-04-04 |
| JPH05502548A (ja) | 1993-04-28 |
| EP0493520A1 (fr) | 1992-07-08 |
| US5012306A (en) | 1991-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Discontinued |