CA2045069A1 - Laser a semiconducteur a lumiere visible - Google Patents
Laser a semiconducteur a lumiere visibleInfo
- Publication number
- CA2045069A1 CA2045069A1 CA2045069A CA2045069A CA2045069A1 CA 2045069 A1 CA2045069 A1 CA 2045069A1 CA 2045069 A CA2045069 A CA 2045069A CA 2045069 A CA2045069 A CA 2045069A CA 2045069 A1 CA2045069 A1 CA 2045069A1
- Authority
- CA
- Canada
- Prior art keywords
- conductivity type
- cladding layer
- disposed
- visible light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005253 cladding Methods 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- 230000000903 blocking effect Effects 0.000 abstract 2
- 229910016920 AlzGa1−z Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/2207—GaAsP based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/2209—GaInP based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
- H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16365090A JP2839337B2 (ja) | 1990-06-21 | 1990-06-21 | 可視光半導体レーザ |
JP2-163650 | 1990-06-21 | ||
JP27470090A JPH04150087A (ja) | 1990-10-12 | 1990-10-12 | 可視光半導体レーザ装置 |
JP2-274700 | 1990-10-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2045069A1 true CA2045069A1 (fr) | 1991-12-22 |
CA2045069C CA2045069C (fr) | 1995-08-22 |
Family
ID=26489035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002045069A Expired - Fee Related CA2045069C (fr) | 1990-06-21 | 1991-06-20 | Laser a semiconducteur a lumiere visible |
Country Status (4)
Country | Link |
---|---|
US (1) | US5161167A (fr) |
EP (1) | EP0462816B1 (fr) |
CA (1) | CA2045069C (fr) |
DE (1) | DE69101123T2 (fr) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5297158A (en) * | 1991-04-22 | 1994-03-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device including a gallium-aluminum arsenic compound |
KR100230444B1 (ko) * | 1992-05-28 | 1999-11-15 | 윤종용 | 반도체 레이저장치 및 이의 제조방법 |
JPH06244490A (ja) * | 1993-02-15 | 1994-09-02 | Sumitomo Electric Ind Ltd | 半導体レーザおよびその製造方法 |
US5523256A (en) * | 1993-07-21 | 1996-06-04 | Matsushita Electric Industrial Co., Ltd. | Method for producing a semiconductor laser |
KR100357787B1 (ko) * | 1994-01-31 | 2003-01-24 | 가부시끼가이샤 히다치 세이사꾸쇼 | 도파로형광소자의제조방법 |
JP3553147B2 (ja) * | 1994-09-05 | 2004-08-11 | 三菱電機株式会社 | 半導体層の製造方法 |
US5832019A (en) * | 1994-11-28 | 1998-11-03 | Xerox Corporation | Index guided semiconductor laser biode with shallow selective IILD |
JPH0955558A (ja) * | 1995-08-11 | 1997-02-25 | Sharp Corp | 半導体レーザ素子 |
JP3521792B2 (ja) * | 1999-03-03 | 2004-04-19 | 松下電器産業株式会社 | 半導体レーザの製造方法 |
JP4661088B2 (ja) * | 2004-06-01 | 2011-03-30 | 住友化学株式会社 | pn接合を有する化合物半導体基板の製造方法 |
TWI452716B (zh) * | 2007-06-08 | 2014-09-11 | Formosa Epitaxy Inc | Gallium nitride based light emitting diode and manufacturing method thereof |
JP5385526B2 (ja) * | 2007-11-16 | 2014-01-08 | ローム株式会社 | 半導体レーザ |
KR102440071B1 (ko) * | 2020-10-16 | 2022-09-05 | (주)큐에스아이 | 반도체 레이저 다이오드 소자 및 그 제조 방법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5595387A (en) * | 1978-12-11 | 1980-07-19 | Fujitsu Ltd | Semiconductor light emitting device |
GB2139422B (en) * | 1983-03-24 | 1987-06-03 | Hitachi Ltd | Semiconductor laser and method of fabricating the same |
US4470976A (en) * | 1983-08-29 | 1984-09-11 | American Cyanamid Company | Poly-cation salt of 4-O-polyhexaose-thio-arylene sulfates |
JPH0685455B2 (ja) * | 1984-07-18 | 1994-10-26 | ソニー株式会社 | 半導体レーザー |
JP2758597B2 (ja) * | 1987-06-17 | 1998-05-28 | 日本電気株式会社 | 半導体レーザ装置 |
JPH0646667B2 (ja) * | 1987-06-17 | 1994-06-15 | 日本電気株式会社 | AlGaInP半導体レ−ザの作製方法 |
JP2723523B2 (ja) * | 1987-10-01 | 1998-03-09 | 日本電気株式会社 | AlGaInP可視光半導体発光素子 |
JPH01134985A (ja) * | 1987-11-19 | 1989-05-26 | Mitsubishi Electric Corp | 半導体レーザ装置 |
EP0325275B1 (fr) * | 1988-01-20 | 1994-09-07 | Nec Corporation | Laser à semi-conducteur pour l'émission de lumière avec des couches cristallines à (AlxGa1-x)0.5In0.5P et procédé pour la croissance d'un cristal à (AlxGa1-x)0,5In0.5P |
AU613142B2 (en) * | 1988-01-20 | 1991-07-25 | Eastman Christensen Company | Drill bit with improved steerability |
US4922499A (en) * | 1988-02-09 | 1990-05-01 | Kabushiki Kaisha Toshiba | Semiconductor laser device and the manufacturing method thereof |
JP2685209B2 (ja) * | 1988-03-25 | 1997-12-03 | 株式会社東芝 | 半導体装置及び半導体発光装置 |
JPH03104183A (ja) * | 1989-09-18 | 1991-05-01 | Mitsubishi Electric Corp | 半導体レーザ及びその製造方法 |
JPH03127891A (ja) * | 1989-10-13 | 1991-05-30 | Mitsubishi Electric Corp | 半導体レーザ装置 |
-
1991
- 1991-06-18 US US07/717,046 patent/US5161167A/en not_active Expired - Fee Related
- 1991-06-19 DE DE91305540T patent/DE69101123T2/de not_active Expired - Fee Related
- 1991-06-19 EP EP91305540A patent/EP0462816B1/fr not_active Expired - Lifetime
- 1991-06-20 CA CA002045069A patent/CA2045069C/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA2045069C (fr) | 1995-08-22 |
EP0462816B1 (fr) | 1994-02-02 |
EP0462816A3 (en) | 1992-04-15 |
EP0462816A2 (fr) | 1991-12-27 |
DE69101123D1 (de) | 1994-03-17 |
US5161167A (en) | 1992-11-03 |
DE69101123T2 (de) | 1994-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |