CA2132986A1 - Dispositifs optiques a semiconducteur et leurs methodes de fabrication - Google Patents
Dispositifs optiques a semiconducteur et leurs methodes de fabricationInfo
- Publication number
- CA2132986A1 CA2132986A1 CA002132986A CA2132986A CA2132986A1 CA 2132986 A1 CA2132986 A1 CA 2132986A1 CA 002132986 A CA002132986 A CA 002132986A CA 2132986 A CA2132986 A CA 2132986A CA 2132986 A1 CA2132986 A1 CA 2132986A1
- Authority
- CA
- Canada
- Prior art keywords
- coupled
- aluminum
- disclosure
- switching
- minicavities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02241—III-V semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/101—Curved waveguide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US860,454 | 1992-03-30 | ||
US07/860,454 US5327448A (en) | 1992-03-30 | 1992-03-30 | Semiconductor devices and techniques for controlled optical confinement |
US07/927,822 US5353295A (en) | 1992-08-10 | 1992-08-10 | Semiconductor laser device with coupled cavities |
US927,822 | 1992-08-10 | ||
PCT/US1993/002844 WO1993020581A1 (fr) | 1992-03-30 | 1993-03-26 | Dispositifs et techniques optiques a semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2132986A1 true CA2132986A1 (fr) | 1993-10-14 |
CA2132986C CA2132986C (fr) | 2004-06-22 |
Family
ID=27127572
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002132986A Expired - Lifetime CA2132986C (fr) | 1992-03-30 | 1993-03-26 | Dispositifs optiques a semiconducteur et leurs methodes de fabrication |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP0634052A4 (fr) |
JP (2) | JP3726240B2 (fr) |
AU (1) | AU3936893A (fr) |
CA (1) | CA2132986C (fr) |
WO (1) | WO1993020581A1 (fr) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5400354A (en) * | 1994-02-08 | 1995-03-21 | Ludowise; Michael | Laminated upper cladding structure for a light-emitting device |
US5550081A (en) * | 1994-04-08 | 1996-08-27 | Board Of Trustees Of The University Of Illinois | Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment |
US6117699A (en) * | 1998-04-10 | 2000-09-12 | Hewlett-Packard Company | Monolithic multiple wavelength VCSEL array |
US7561770B2 (en) * | 2007-07-30 | 2009-07-14 | Hewlett-Packard Development Company, L.P. | Microresonator systems and methods of fabricating the same |
GB2478602B (en) * | 2010-03-12 | 2014-09-03 | Toshiba Res Europ Ltd | A semiconductor device and method of manufacturing a semiconductor device |
US11658453B2 (en) * | 2018-01-29 | 2023-05-23 | Ronald LaComb | Concentric cylindrical circumferential laser |
FR3078834B1 (fr) * | 2018-03-08 | 2020-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion |
CN115799990A (zh) * | 2022-11-14 | 2023-03-14 | 中国科学院半导体研究所 | 一种高铝组分的氧化限制半导体激光器及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4291327A (en) * | 1978-08-28 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | MOS Devices |
-
1993
- 1993-03-26 CA CA002132986A patent/CA2132986C/fr not_active Expired - Lifetime
- 1993-03-26 JP JP51757193A patent/JP3726240B2/ja not_active Expired - Lifetime
- 1993-03-26 WO PCT/US1993/002844 patent/WO1993020581A1/fr not_active Application Discontinuation
- 1993-03-26 EP EP93908605A patent/EP0634052A4/fr not_active Withdrawn
- 1993-03-26 AU AU39368/93A patent/AU3936893A/en not_active Abandoned
-
2002
- 2002-11-28 JP JP2002345786A patent/JP2003224330A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO1993020581A1 (fr) | 1993-10-14 |
JP3726240B2 (ja) | 2005-12-14 |
CA2132986C (fr) | 2004-06-22 |
EP0634052A1 (fr) | 1995-01-18 |
JPH07505503A (ja) | 1995-06-15 |
JP2003224330A (ja) | 2003-08-08 |
AU3936893A (en) | 1993-11-08 |
EP0634052A4 (fr) | 1997-08-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request |