CA2007829A1 - Dispositif a semiconducteur comportant des heterostructures a puits quantique en cascade a grande mobilite electronique - Google Patents

Dispositif a semiconducteur comportant des heterostructures a puits quantique en cascade a grande mobilite electronique

Info

Publication number
CA2007829A1
CA2007829A1 CA2007829A CA2007829A CA2007829A1 CA 2007829 A1 CA2007829 A1 CA 2007829A1 CA 2007829 A CA2007829 A CA 2007829A CA 2007829 A CA2007829 A CA 2007829A CA 2007829 A1 CA2007829 A1 CA 2007829A1
Authority
CA
Canada
Prior art keywords
quantum well
modulation
cascaded
doped quantum
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CA2007829A
Other languages
English (en)
Other versions
CA2007829C (fr
Inventor
Israel Bar-Joseph
Tao-Yuan Chang
Daniel S. Chemla
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Publication of CA2007829A1 publication Critical patent/CA2007829A1/fr
Application granted granted Critical
Publication of CA2007829C publication Critical patent/CA2007829C/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
CA002007829A 1989-03-03 1990-01-16 Dispositif a semiconducteur comportant des heterostructures a puits quantique en cascade a grande mobilite electronique Expired - Fee Related CA2007829C (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/322,958 US5008717A (en) 1989-03-03 1989-03-03 Semiconductor device including cascaded modulation-doped quantum well heterostructures
US322,958 1989-03-03

Publications (2)

Publication Number Publication Date
CA2007829A1 true CA2007829A1 (fr) 1990-09-03
CA2007829C CA2007829C (fr) 1993-12-07

Family

ID=23257193

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002007829A Expired - Fee Related CA2007829C (fr) 1989-03-03 1990-01-16 Dispositif a semiconducteur comportant des heterostructures a puits quantique en cascade a grande mobilite electronique

Country Status (5)

Country Link
US (1) US5008717A (fr)
EP (1) EP0385685B1 (fr)
JP (1) JPH07109929B2 (fr)
CA (1) CA2007829C (fr)
DE (1) DE69015228T2 (fr)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2968335B2 (ja) * 1989-09-04 1999-10-25 ブリティシュ・テレコミュニケーションズ・パブリック・リミテッド・カンパニ 量子井戸構造
US5140386A (en) * 1991-05-09 1992-08-18 Raytheon Company High electron mobility transistor
US5210428A (en) * 1991-11-01 1993-05-11 At&T Bell Laboratories Semiconductor device having shallow quantum well region
JPH05152677A (ja) * 1991-11-28 1993-06-18 Nec Corp 半導体レーザ装置
FR2692374B1 (fr) * 1992-06-15 1994-07-29 France Telecom Procede et dispositif de modulation et d'amplification de faisceaux lumineux.
US5436756A (en) * 1992-09-30 1995-07-25 At&T Bell Laboratories Suppressed photocurrent, quantum well optical modulation device
DE4313488A1 (de) * 1993-04-24 1994-10-27 Sel Alcatel Ag Optoelektronisches Halbleiterbauelement
CA2187619A1 (fr) * 1994-04-26 1995-11-02 Magnus Jandel Absorbeur optique a super reseau
US5732179A (en) * 1995-03-30 1998-03-24 Bell Communications Research, Inc. Birefringence-free semiconductor waveguide
WO1998028656A1 (fr) * 1996-12-20 1998-07-02 Emory University MULTIPUITS QUANTIQUES InGaAs/InA1As DOPES Be, FORMES PAR CROISSANCE A BASSE TEMPERATURE
WO2001031756A1 (fr) 1999-10-29 2001-05-03 E20 Communications, Inc. Lasers integres modules a cavite verticale, a emission par la surface et a pompage optique
US6424669B1 (en) 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
DE10135958B4 (de) * 2001-07-24 2008-05-08 Finisar Corp., Sunnyvale Elektroabsorptionsmodulator, Modulator-Laser-Vorrichtung und Verfahren zum Herstellen eines Elektroabsorptionsmodulators
AU2003202467A1 (en) * 2002-01-07 2003-07-24 Matsushita Electric Industrial Co., Ltd. Surface type optical modulator and its manufacturing method
US7599595B2 (en) * 2003-10-03 2009-10-06 Ntt Electronics Corporation Semiconductor optoelectronic waveguide
US7177061B2 (en) * 2005-05-31 2007-02-13 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability
US7508858B2 (en) * 2007-04-30 2009-03-24 The Research Foundation Of State University Of New York Detuned duo-cavity laser-modulator device and method with detuning selected to minimize change in reflectivity
WO2010137458A1 (fr) * 2009-05-27 2010-12-02 日本電気株式会社 Modulateur optique à semi-conducteur et modulateur optique de mach-zehnder à semi-conducteur
US9733497B2 (en) * 2015-04-09 2017-08-15 Mitsubishi Electric Corporation Semiconductor optical modulator and optical module

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8331298D0 (en) * 1983-11-23 1983-12-29 British Telecomm Optical devices
US4700353A (en) * 1985-08-12 1987-10-13 Cornell Research Foundation, Inc. Active modulation of quantum well lasers by energy shifts in gain spectra with applied electric field
US4761620A (en) * 1986-12-03 1988-08-02 American Telephone And Telegraph Company, At&T Bell Laboratories Optical reading of quantum well device
US4818079A (en) * 1987-01-15 1989-04-04 California Institute Of Technology Multiple quantum well optical modulator
JPH0721594B2 (ja) * 1987-01-19 1995-03-08 国際電信電話株式会社 光スイツチ
US4873555A (en) * 1987-06-08 1989-10-10 University Of Pittsburgh Of The Commonwealth System Of Higher Education Intraband quantum well photodetector and associated method

Also Published As

Publication number Publication date
JPH07109929B2 (ja) 1995-11-22
DE69015228T2 (de) 1995-05-04
CA2007829C (fr) 1993-12-07
EP0385685B1 (fr) 1994-12-21
JPH02272785A (ja) 1990-11-07
EP0385685A2 (fr) 1990-09-05
EP0385685A3 (fr) 1991-09-25
US5008717A (en) 1991-04-16
DE69015228D1 (de) 1995-02-02

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